X-ray and Related Techniques

215 Pages·2011·28.495 MB·English

by  Edited by Zainal Arifin Ahmad Muhd Ambar Yarmo Fauziah Haji Abdul Aziz Meor Yusoff Meor Sulaiman Badrol Ahmad Khairul Nizar Ismail Nik Akmar Rejab

X-ray
and
Related
Techniques
Edited by
Zainal Arifin Ahmad
Muhd Ambar Yarmo
Fauziah Haji Abdul Aziz
Meor Yusoff Meor Sulaiman
Badrol Ahmad
Khairul Nizar Ismail
Nik Akmar Rejab
X-ray and Related Techniques
Selected, peer reviewed papers from the International Conference on
X-ray and Related Techniques in Research and Industry
(IXCRI 2010)
held at Langkawi Island, Malaysia
from 9th to 10th of June 2010

Edited by
Zainal Arifin Ahmad, Muhd Ambar Yarmo,
Fauziah Haji Abdul Aziz,
Meor Yusoff Meor Sulaiman, Badrol Ahmad,
Khairul Nizar Ismail, Nik Akmar Rejab

TRANS TECH PUBLICATIONS LTD

Switzerland • UK • USA
Copyright  2011 Trans Tech Publications Ltd, Switzerland

All rights reserved. No part of the contents of this publication may be reproduced
or transmitted in any form or by any means without the written permission of the
publisher.

Trans Tech Publications Ltd
Laubisrutistr. 24
CH-8712 Stafa-Zurich
Switzerland
http://www.ttp.net
Volume 173 of
Advanced Materials Research
ISSN 1022-6680
Full text available online at http://www.scientific.net

Distributed worldwide by and in the Americas by
Trans Tech Publications Ltd Trans Tech Publications Inc.
Laubisrutistr. 24 PO Box 699, May Street
CH-8712 Stafa-Zurich Enfield, NH 03748
Switzerland USA
Phone: [phone]
Fax: [phone] Fax: [phone]
e-mail: [email protected] e-mail: [email protected]
Message from Guest Editor

Dear readers and contributors,

First of all, we are pleased to have an opportunity to thank and congratulate all our
contributors from various parts of the world who take part in the International Conference on
X-ray and Related Techniques in Research and Industry (IXCRI 2010) held at Langkawi
Island, Malaysia from 9th to 10th of June 2010. ICXRI2010 was jointly organized by
Universiti Malaysia Perlis (UniMAP) and Malaysian X-Ray Application Society (XApp).
XApp is a Chapter in the Malaysian Nuclear Society (MNS). ICXRI conference is organized
at every two years. ICXRI2012 will be held in Penang, Malaysia.

ICXRI2010 is very pleased to receive 110 participants with 80 scientific papers and poster
presentations. The topic covers mainly X-ray and other related researches. We are also
delighted to select 34 quality scientific papers published in Advanced Materials Research
2010 by Trans Tech Publications Ltd. All papers were peer reviewed by experts from related
fields. Therefore, the papers are of high standard and had satisfied the referee’s requirement.
We believe that by following an international standard, we could maintain the quality and
integrity of this ICXRI series.

Finally, we would like once again to extend our invitation to all scientists and researchers in
this field to participate in ICXRI2012 and publish their works in the internationally indexed
publication.

Guest Editors
Professor Dr. Zainal Arifin Ahmad (Universiti Sains Malaysia) – Chief
Professor Dr. Muhd Ambar Yarmo (Universiti Kebangsaan Malaysia)
Professor Dr. Fauziah Haji Abdul Aziz (Universiti Malaysia Sabah)
Dr. Meor Yusoff Meor Sulaiman (Malaysian Nuclear Agency)
Dr. Badrol Ahmad (TNB Research)
Dr. Khairul Nizar Ismail (Universiti Malaysia Perlis)
Mr. Nik Akmar Rejab (Universiti Sains Malaysia) – Editorial Assistant
INTERNATIONAL CONFERENCE ON X-RAY AND RELATED TECHNIQUES IN
RESEARCH AND INDUSTRY (IXCRI 2010)

CONFERENCE COMMITTEE MEMBERS

Patron : Brig. Gen Prof. Dato’ Dr. Kamarudin Hussin (UniMAP)
Honorary Advisor : Prof. Dr. Ambar Yarmo (UKM)
: Prof. Dr .Fauziah Haji Abdul Aziz (UMS)
Prof. Dr. Shamsul Baharin Jamaludin (UniMAP)
Chairman : Prof. Dr. Zul Azhar Zahid Jamal (UniMAP)
Joint Chairman : Prof. Dr. Zainal Arifin Ahmad (USM)
Deputy Chairman : Assoc. Prof. Che Mohd Ruzaidi Ghazali (UniMAP)
Secretary : Dr. Khairul Nizar Ismail (UniMAP)
Honorary Secretary : Dr. Meor Yusoff Meor Sulaiman (Nuclear Malaysia)
Treasurer : Mr. Murizam Darus (UniMAP)
Honorary Treasurer : Dr. Badrol Ahmad (TNB Research)

Organising Committee Members

Director : Dr. Khairul Nizar Ismail
Deputy Director : Dr. Khairel Rafezi Ahmad
Secretary 1 : Mr. Faizul Che Pa
Secretary 2 Mrs. Norazian Mohamed Noor
Treasurer : Mr. Murizam Darus
Secretariat : Mrs. Noraziana Parimin
Mr. Faizul Che Pa
Mrs. Masitah Hasan
Mr. Nazerry Rosmandy Rahmat
Mrs. Rushaniza Idawaty Ruslan
Scientific : Dr. Mohd Nazree Derman
Dr. Mazlee Mohd Noor
Mr. Ragunathan Santiagoo
Mrs. Nabilah Aminah Lutfi
Wong Yee Shian
Sponsorship : Mrs. Abdul Haqi Ibrahim
Mrs. Shaiful Rizam Shamsudin
Workshop : Dr. Khairel Rafezi
Mrs. Murizam Darus
Mrs. Abdul Haqi Ibrahim
Technical : Mrs. Mohd Nazry Salleh
Mrs. Roshasmawi Abdul Wahab
Mrs. Che Zulzikrami Azner Abidin
Food & Exhibition : Mrs. Noor Mariamadzliza Mohd Noor
Mrs. Noor Azira Mohd Noor
Mrs. Norwahidatul Azura Zainon Najib
Publicity & website : Mrs. Salsuwanda Selamat
Mrs. Khairuddin Md Isa
Protocol & hospitality: Mrs. Mustafa Ismail
Mrs. Zaheruddin Kasmuin
Mrs. Mahyun Ab Wahab
Mrs. Norinnar Md Nor
Mrs. Suriati Aliza Ab Samad
Mrs. Norsyahiza Hamzah
Table of Contents
Preface
Committees
Evaluation of Static Performance of Optoelectronic Semiconductor Devices under X-Rays
Irradiation
H.F.A. Amir and F.P. Chee 1
Analysis of Mineralogical Component of Palm Oil Fuel Ash with or without Unburned
Carbon
C. Chandara, K.A.M. Azizli, A.A. Zainal, S.F.S. Hashim and E. Sakai 7
The Effect of Sintering Temperature on Crystal Structure and Microstructure of
Pr Ba MnO Ceramic
0.67 0.33 3
W.J. Kuen, L.K. Pah, A.H. Shaari, C.S. Kien and N.S. Wei 12
Effect of Al O /ZrO Hybrid on the Fracture Toughness and Flexural Properties of PMMA
2 3 2
Denture Base
A.O. Alhareb and A.A. Zainal 18
Effect of Fractional Precipitation on Quality of Nanostructured Alumina Produced from
Black Aluminium Dross Waste
Y.M.S. Meor, M. Masliana and P. Wilfred 24
Effect of Particle Sizes of Magnesium Oxide on Zirconia Toughened Alumina Vickers
Hardness
A.Z.A. Azhar, F.T. Kong, M. Hasmaliza, M.M. Ratnam and A.A. Zainal 29
Development of a Simultaneous Elemental Analysis for Clay Minerals Using EDXRF
Y.M.S. Meor, M. Masliana, P. Wilfred and D. Parimala 35
Structural Properties Studies of GaN on 6H-SiC by Means of X-Ray Diffraction Technique
C.C. Guan, S.S. Ng, Z. Hassan and H. Abu Hassan 40
Effects of Different Gloss Firing Temperature on the Crystallization of Zinc-Based Crystal
Glaze
A.R. Jamaludin, S.R. Kasim and A.A. Zainal 44
Hydrogenolysis of Glycerol to Propanediols over Nano-Ru/C Catalyst with Ionic Liquid
Addition
A. Alias, H. Noraini and M.A. Yarmo 49
Characterization of Porous Anodic Aluminium Oxide Film on Aluminium Templates
Formed in Anodizing Process
A.W. Juyana and M.N. Derman 55
Effects of Calcination Temperature on the Phase Formation and Microstructure of Barium
Zinc Tantalate
H. Jaafar, A.A. Zainal and M.F. Ain 61
Phase Analysis of Mechanically Alloyed In Situ Copper-Tungsten Carbide Composite
H. Zuhailawati, Y. Mahani and O. Radzali 67
Application of Small-Angle X-Ray Scattering to Predict Microfibril Angle in Acacia
mangium Wood
T.A. Tamer, A.A.H. Fauziah and R. Shahidan 72
X-Ray Powder Diffraction Study on the MgB Superconductor Reacted with Nano-SiC: The
2
Effects of Sintering Temperature
T.K. Yong, T.K. Lee, L.K. Pah, A.H. Shaari, T.K. Ban and C.S. Kien 78
Heating Rate Effects on Properties of Powder Metallurgy Fe-Cr-Al O Composites
2 3
S. Saidatulakmar, J.B. Shamsul, H. Zuhailawati and A.A. Zainal 84
Growth of Cu-Zn and Cu Zn Intermetallic Compounds in the Sn-9Zn/Cu Joint during
5 5 8
Liquid State Aging
M. Ramani, R.A. Zaman, Z.Z. Abidin, F.A. Asmawati and M.N. Derman 90
Effect of La O Additions on Microstructure, Morphology and Pressure Sensing Behaviour
2 3
of PZT Based Ceramics Sintered in Al O Environment
2 3
M.H. Haji Jumali, Y.Y. Tio, R. Norhashimah, M.S. Muhammad and M. Yahaya 96
The Effect of Water Content on the Formation of TiO Nanotubes in Ethylene Glycol
2
K.A. Saharudin and S. Sreekantan 102
b X-ray and Related Techniques
Characterization of Co-Cr-Mo (F-75) Alloy Produced by Solid State Sintering
C.D. Zuraidawani, J.B. Shamsul and F. Bari 106
Formation of Titanium Carbide Reinforced Copper Matrix Composite by In Situ
Processing
M.S. Nur Hawadah, H. Zuhailawati and O. Radzali 111
Formation of TiC-Reinforced Iron Based Composite through Carbothermal Reduction of
Hematite and Anatase
M. Salihin Hassin, H. Zuhailawati and P. Samayamutthirian 116
Stabilization of Magnetite Nano Iron Oxide with a Series of Novel Surfactants
C. Swee Yee, S.C. Hong Seng, W. Zurina Samad, D. Panchanan Pramanik, N.I. Nik Yusoff, J.
Salimon and M.A. Yarmo 122
Characterization of Fluoro-Doped Tin Oxide Films Prepared by Newly Approached of
Inkjet Printing Methods
W.Z. Samad, M.A. Yarmo and M.M. Salleh 128
Effect of Ruthenium Metal Precursors Supported on Bentonite in Hydrogenolysis Glycerol
H. Noraini, A. Alias, W.Z. Samad, M.B. Kassim and M.A. Yarmo 134
New Silica Supported HClO as Efficient Catalysts for Estolide Synthesis from Oleic Acid
4
N.A.M. Nordin, N.F. Adnan, A. Alias, W.N.R. Wan Isahak, J. Salimon, M.A. Yarmo and R.A.
Kamaruddin 140
Synthetic Hydrotalcite Prepared from Modified Combustion Method Using Glucose as Fuel
M.R. Othman, C. Martunus and W.J.N. Fernando 146
Effects of the Polyvinyl Alcohol (PVA) on the Synthesis of Alumina Fibers through
Electrospinning Technique
R. Abdullah, S. Sreekantan and M. Hasmaliza 150
Selective Oxidation of Glycerol over Titania Supported AuPd Bimetallic Catalysts
A.H. Ahmad Nadzri, H. Noraini, A. Alias, J. Salimon and M.A. Yarmo 155
Crystallite Size of Chitosan Capped Zinc Sulfide Nanoparticles Synthesized via Wet
Chemical Route
E.Y. Lin Foo and S.D. Hutagalung 161
La-Doped CaCu Ti O Ceramics Sintered in Argon Environment
3 4 12
N.S. Afzan Sharif, S.D. Hutagalung and Z.A. Ahmad 167
Formation and Mechanistic Study of Self-Ordering ZrO Nanotubes by Anodic Oxidation
2
S. Ismail, Z. Lockman, A.A. Zainal and A. Berenov 173
Calcium Oxide as Potential Catalyst for Gasification of Palm Oil Empty Fruit Bunch to
Produce Syngas
K. Ismail, M.A. Yarmo, Y.H. Taufiq-Yap and A. Ahmad 178
Effect of pH on TiO Nanoparticles via Sol-Gel Method
2
S.A. Ibrahim and S. Sreekantan 184
Rietveld Quantitative Phase Analysis of Non-Stoichiometric Cordierite Synthesised from
Mainly Talc and Kaolin: Effect of Sintering Temperature
J. Banjuraizah, M. Hasmaliza and A.A. Zainal 190
Characterization and Phase Evolution of Cordierite Based Glass Synthesis from Pure Oxide
and Minerals
J. Banjuraizah, M. Hasmaliza and A.A. Zainal 196
© (2011) Trans Tech Publications, Switzerland
doi:10.4028/www.scientific.net/AMR.173.1
Evaluation of Static Performance of Optoelectronic Semiconductor
Devices under X-rays Irradiation
HAIDER F. ABDUL AMIR a and FUEI PIEN CHEEb
School of Science and Technology, Universiti Malaysia Sabah,
88400 Kota Kinabalu, Sabah, Malaysia.
[email protected], [email protected]
Keywords: optoelectronic, x-rays, Total Ionizing Dose (TID).

Abstract. In this research, optoelectronic devices consisted of an infrared light emitting diode and a
phototransistor with no special handling or third party-packaging were irradiated to ionizing
radiation utilizing x-rays. It was found that the devices under test (DUTs) undergo performance
degradation in their functional parameters during exposure to x-rays. These damaging effects are
depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects
by x-rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to
radiation.
Introduction
The high-altitude nuclear test Starfish Prime was conducted by the United States of America on
July 9, 1962 above Johnston Island in the Pacific Ocean. This detonation was then followed by
several similar Soviet nuclear events in October [1]. The nuclear contamination as a consequential
of these activities produced adequate electronic pumping on the Van Allen belts [2]. The Telstar 1
communication satellite failed not long after that as a result of the detrimental effects from the
radiation in the Van Allen belts. This then rose up the necessary of intensive study on the effects of
ionizing radiation on semiconductor devices.
The radiation environment that a semiconductor device encounter either at exoatmospheric or
endoatmospheric [3] can be generally divided into five which are the space environment, high-
energy physic experiments, nuclear environment, natural environments as well as process induced
radiation. Each of these radiation environments possesses its own spectrum of particles and energy
distribution. Therefore, several evaluation tests have to be done on the selected devices before they
are used for the intended application.
These evaluation tests consisted of two key components: I) characterization of the radiation
environment depending on the intended application and II) analyzing the radiation tolerance based
on the performing parameters and manufacturing technology. The radiation effects on
semiconductor devices can be categorized into four: Electromagnetic Pulse (EMP) effects, high
dose rate effects, Single Event Upsets (SEU) and total dose effects [3].
EMP effects arise from the incidence of an electromagnetic wave on the semiconductor devices
[4]. The resulting electric and magnetic fields from EMP may interact with electrical and electronic
systems to produce damaging current and voltage surges. This effect is temporary and the system
can bounce back to normal operating condition as soon as the radiation pulse terminates. Dose rate
effects, however, induce a temporary failure of circuit operation which lasts as long as the radiation
pulse exists. As for SEUs, it is the radiation-induced errors in semiconductor devices caused when
charged particles lose energy by ionizing the medium through which they pass, leaving behind a
wake of electron-hole pairs. This type of error is temporary and therefore, no permanent damage to
the circuits [4].
Total dose effects, however, are permanent damage effects. Total dose effects are often
associated with bulk defect creation or accumulation of trapped charge at the oxide region [5].
Consequently, the performance of semiconductor devices depends ultimately on the presence of
defects. Total dose effects for optoelectronic devices are normally serve as the basis for parts
2 X-ray and Related Techniques
procurement decisions. Total dose effects testing typically utilize ionizing radiation. Ionizing
radiation can lead to failure in semiconductor based electronic devices due to rapid ionization
events, or cause a slow continuous degradation in the performance of the devices. The work
reported here primarily deals with this type of radiation damage due to TID.
This paper will present the x-ray effects on optoelectronic DUT, the radiation response of DUT
and radiation tolerance of DUT to fulfill the system’s operations.
Experimental Details
Test Device Descriptions. The DUT used in this test consisted of a Plastic Infrared Light Emitting
Diode (QEE 113) coupled to a Plastic Silicon Infrared Phototransistor (QSE 113). The QEE113 is a
940 nm Gallium Arsenide (GaAs) LED encapsulated in a medium wide angle and clear epoxy
plastic side looker package. The QSE113, however, is a NPN silicon (Si) phototransistor
encapsulated in a wide angle, infrared transparent and black plastic side looker package.
Optoelectronic devices are being discussed as they play an important role in optical satellite
telecommunications and sensing technology. They are widely used especially in providing electrical
isolation between circuits such as sub-system to sub-system interfaces for space light designing’s
[6]. These photonics systems are ideal for applications in space system due to their high bandwidth
and speed of operation, the immunity for electromagnetic interference, low power consumption and
cost, yet, of high reliability [7].

X-ray Exposure. In this X-ray source equipment (model Toshiba KXO-12R), an exposure time
selector and a milliampere-seconds (mAs) relay are connected to a computer. This controls the x-
ray tube current according to the selected mAs product.
The operated potential for this x-ray machine is 40 kV and the exposure milliampere (mA) was
100 mA. The total radiation output for an exposure period is proportional to the mAs. Therefore, the
absorbed dose of the DUTs could be increased by raising the mAs. Distance from the focal point of
the x-ray tube to the irradiated DUT was fixed to 50 cm. This was as the radiation intensity varies
approximately inversely with the square of the distance. The changes in the output parameter of the
DUTs were recorded and monitored at every increasing level of mAs.

Test Setup. The radiation testing on the electronic devices consisted of multi-parameter test with
different exposure levels. Ambient temperature throughout the test was 25±3ºC. Before the
irradiation process, a control test of 72 hours was performed on the DUTs. This was known as the
pre-irradiation testing. Only devices which had passed the electrical specifications as defined in the
test plan were submitted to radiation testing. The diagram of the test setup was as shown in Fig. 1.
The information and status of the DUT were transmitted through the driver circuit based on an
analog to digital converter (ADC) circuit into the PC. This driver board served as the power supply
to the DUT. Moreover, it was operated as a measuring tool to real time monitor the changes in the
collector current (I ) of the reference phototransistor at various dose levels. The LED forward
C
current (I ) was acted as changing parameter in this experiment. Cables used to connect this system
F
should never be led to any serious distortion of the shape of signals or the degradation of reliability
in data communication.