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About Wide Bandgap Semiconductor SiC and GaN Power Amplifiers
This document discusses wide bandgap semiconductor power amplifiers using silicon carbide (SiC) and gallium nitride (GaN) transistors. It first introduces the importance and advantages of using SiC and GaN transistors in power amplifiers due to their material properties like high breakdown electric field strength, electron velocity and operating temperature compared to other semiconductors like gallium arsenide and silicon. It then describes the design, fabrication and characterization of two different power amplifiers - a single stage 26-watt SiC MESFET amplifier from 200-500 MHz and two amplifiers using 10-watt SiC MESFET and GaN HEMT transistors from 0.7-1.8 GHz. The document
Detailed Information
| Author: | ['A. Villa'] |
|---|---|
| Publication Year: | 2013 |
| Pages: | 28 |
| Language: | English |
| Format: | |
| Price: | FREE |
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