Very-Low Power, Rail-to-Rail Out, Negative-Rail In, Voltage-Feedback Op Amp

47 Pages·2016·1.83 MB·English

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OPA2836-Q1
SBOS794–DECEMBER2016
OPA2836-Q1 Very-Low Power, Rail-to-Rail Out, Negative-Rail In, Voltage-Feedback
Operational Amplifier
1 Features 3 Description
• QualifiedforAutomotiveApplications The OPA2836-Q1 device is a dual-channel, ultra-low
1 power, rail-to-rail output, negative-rail input, voltage-
• AEC-Q100QualifiedWiththeFollowingResults:
feedback operational amplifier designed to operate
– DeviceTemperatureGrade1: –40°Cto125°C over a power-supply range of 2.5 V to 5.5 V (single
AmbientOperatingTemperatureRange supply), or ±1.25 V to ±2.75 V (dual supply).
– DeviceHBMClassificationLevel2 Consuming only 1 mA per channel with a unity-gain
bandwidth of 205 MHz, this amplifier sets an industry-
– DeviceCDMClassificationLevelC6
leading, power-to-performance ratio for rail-to-rail
• LowPower: amplifiers.
– SupplyVoltage:2.5Vto5.5V
For battery-powered, portable applications where
– QuiescentCurrent:1mA(Typ) power is a key importance, the low-power
– Power-DownMode:0.5 µATyp) consumption and high-frequency performance of the
OPA2836-Q1 offers designers performance-versus-
• Bandwidth:205MHz
power that isnotattainableinotherdevices.
• SlewRate:560V/µs
The OPA2836-Q1 is characterized for operation over
• RiseTime:3ns(2V )
STEP the extended industrial temperature range of –40°C
• SettlingTime(0.1%):22ns(2V ) to+125°C.
STEP
• OverdriveRecoveryTime:60ns
DeviceInformation(1)
• SNR: 0.00013% (–117.6dBc)at1kHz(1V )
RMS
PARTNUMBER PACKAGE BODYSIZE(NOM)
• THD: 0.00003% (–130dBc)at1kHz(1V )
RMS
OPA2836-Q1 VSSOP(8) 3.00mm×3.00mm
• HD ,HD :–85dBc,–105dBcat1MHz(2V )
2 3 PP
(1) For all available packages, see the orderable addendum at
• InputVoltageNoise:4.6nV/√Hz(f=100kHz)
theendofthedatasheet.
• InputOffsetVoltage:65 µV(±400-µVMax)
• CMRR:116dB
• Output CurrentDrive:50mA HarmonicDistortionvsFrequency
• RRO:Rail-to-RailOutput
-40
• InputVoltageRange:–0.2Vto+3.9V VS= 2.7 V,
-50 G = 1,
(5-VSupply) VOUT= 1 Vpp,
-60 RF= 0W,
2 Applications Bc -70 RL= 1 kW
d
•• LAouwdi-oPoAwDeCrISnipguntaBlCufofenrdsitioning Distortion - --9800 HD2
• Low-PowerSARandΔΣ ADCDrivers nic -100
o
m
• PortableSystems ar -110
H
• Low-PowerSystems -120 HD3
• High-DensitySystems -130
-140
10k 100k 1M 10M
f - Frequency - Hz
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.
OPA2836-Q1
SBOS794–DECEMBER2016 www.ti.com
Table of Contents
1 Features.................................................................. 1 8.4 DeviceFunctionalModes........................................24
2 Applications........................................................... 1 9 ApplicationandImplementation........................ 28
3 Description............................................................. 1 9.1 ApplicationInformation............................................28
4 RevisionHistory..................................................... 2 9.2 TypicalApplications................................................34
5 OPA2836-Q1RelatedDevices.............................. 3 10 PowerSupplyRecommendations..................... 37
6 PinConfigurationandFunctions......................... 3 11 Layout................................................................... 37
11.1 LayoutGuidelines.................................................37
7 Specifications......................................................... 4
11.2 LayoutExample....................................................38
7.1 AbsoluteMaximumRatings......................................4
12 DeviceandDocumentationSupport................. 39
7.2 ESDRatings..............................................................4
7.3 RecommendedOperatingConditions.......................4 12.1 DeviceSupport ....................................................39
7.4 ThermalInformation..................................................4 12.2 RelatedLinks........................................................39
7.5 ElectricalCharacteristics:V =2.7V........................5 12.3 ReceivingNotificationofDocumentationUpdates39
S
7.6 ElectricalCharacteristics:V =5V...........................7 12.4 CommunityResources..........................................39
S
7.7 TypicalCharacteristics..............................................9 12.5 Trademarks...........................................................39
12.6 ElectrostaticDischargeCaution............................39
8 DetailedDescription............................................ 21
12.7 Glossary................................................................39
8.1 Overview.................................................................21
13 Mechanical,Packaging,andOrderable
8.2 FunctionalBlockDiagrams.....................................21
Information........................................................... 40
8.3 FeatureDescription.................................................21
4 Revision History
DATE REVISION NOTES
December2016 * Initialrelease.
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5 OPA2836-Q1 Related Devices
DEVICE BW(AV=1) SLEWRATE IQ(5V) INPUTNOISE RAIL-TO-RAILIN/OUT DUALS
(MHz) (V/µs) (mA) (nV/√Hz)
OPA836 205 560 1 4.6 –VS/Out OPA2836
OPA835 30 110 0.25 9.3 –VS/Out OPA2835
OPA365 50 25 5 4.5 In/Out OPA2365
THS4281 95 35 0.75 12.5 In/Out —
LMH6618 140 45 1.25 10 In/Out LMH6619
OPA830 310 600 3.9 9.5 –VS/Out OPA2830
ForacompleteselectionofTIhigh-speedamplifiers, visitwww.ti.com.
6 Pin Configuration and Functions
DGKPackage
8-PinVSSOP
TopView
VOUT1 1 8 VS+
VIN1- 2 - 7 VOUT2
+
V 3 6 V
IN1+ - IN2-
+
V 4 5 V
S- IN2+
PinFunctions
NAME PIN I/O DESCRIPTION
V 3 Input Amplifier1noninvertinginput
IN1+
V 2 Input Amplifier1invertinginput
IN1–
V 5 Input Amplifier2noninvertinginput
IN2+
V 6 Input Amplifier2invertinginput
IN2–
V 1 Output Amplifier1output
OUT1
V 7 Output Amplifier2output
OUT2
V 8 Power Positivepowersupplyinput
S+
V 4 Power Negativepowersupplyinput
S–
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7 Specifications
7.1 Absolute Maximum Ratings
overoperatingfree-airtemperaturerange(unlessotherwisenoted)(1)
MIN MAX UNIT
V toV Supplyvoltage 5.5 V
S– S+
V Inputvoltage V –0.7 V +0.7 V
I S– S+
V Differentialinputvoltage 1 V
ID
I Continuousinputcurrent 0.85 mA
I
I Continuousoutputcurrent 60 mA
O
Continuouspowerdissipation SeeThermalInformation
T Maximumjunctiontemperature 150 °C
J
T Operatingfree-airtemperature –40 125 °C
A
T Storagetemperature –65 150 °C
stg
(1) StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestressratings
only,whichdonotimplyfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommended
OperatingConditions.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
7.2 ESD Ratings
VALUE UNIT
Humanbodymodel(HBM),perAECQ100-002(1) ±6000
V Electrostaticdischarge V
(ESD)
Charged-devicemodel(CDM),perAECQ100-011 ±1000
(1) AECQ100-002indicatesthatHBMstressingshallbeinaccordancewiththeANSI/ESDA/JEDECJS-001specification.
7.3 Recommended Operating Conditions
overoperatingfree-airtemperaturerange(unlessotherwisenoted)
MIN NOM MAX UNIT
V Singlesupplyvoltage 2.5 5 5.5 V
S+
T Ambienttemperature –40 25 125 °C
A
7.4 Thermal Information
OPA2836-Q1
THERMALMETRIC(1) DGK(VSSOP) UNIT
8PINS
R Junction-to-ambientthermalresistance 177.7 °C/W
θJA
R Junction-to-case(top)thermalresistance 69.3 °C/W
θJCtop
R Junction-to-boardthermalresistance 98.8 °C/W
θJB
ψ Junction-to-topcharacterizationparameter 11.7 °C/W
JT
ψ Junction-to-boardcharacterizationparameter 97.2 °C/W
JB
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication
report.
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7.5 Electrical Characteristics: V = 2.7 V
S
testconditionsunlessotherwisenoted:V =2.7V,V =0V,V =1V ,R =0Ω,R =2kΩ,G=1V/V,inputandoutput
S+ S– OUT PP F L
referencedtomid-supply,V =mid-supply–0.5V;T =25°C(unlessotherwisenoted)
IN_CM A
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
ACPERFORMANCE
VOUT=100mVPP,G=1 200 C
VOUT=100mVPP,G=2 100 C
Small-signalbandwidth MHz
VOUT=100mVPP,G=5 26 C
VOUT=100mVPP,G=10 11 C
Gain-bandwidthproduct VOUT=100mVPP,G=10 110 MHz C
Large-signalbandwidth VOUT=1VPP,G=2 60 MHz C
Bandwidthfor0.1-dBflatness VOUT=1VPP,G=2 25 MHz C
Slewrate,rise VOUT=1VSTEP,G=2 260 V/µs C
Slewrate,fall VOUT=1VSTEP,G=2 240 V/µs C
Risetime VOUT=1VSTEP,G=2 4 ns C
Falltime VOUT=1VSTEP,G=2 4.5 ns C
Settlingtimeto1%,rise VOUT=1VSTEP,G=2 15 ns C
Settlingtimeto1%,fall VOUT=1VSTEP,G=2 15 ns C
Settlingtimeto0.1%,rise VOUT=1VSTEP,G=2 30 ns C
Settlingtimeto0.1%,fall VOUT=1VSTEP,G=2 25 ns C
Settlingtimeto0.01%,rise VOUT=1VSTEP,G=2 50 ns C
Settlingtimeto0.01%,fall VOUT=1VSTEP,G=2 45 ns C
Overshoot VOUT=1VSTEP,G=2 5% C
Undershoot VOUT=1VSTEP,G=2 3% C
f=10kHz,VIN_CM=mid-supply–0.5V –133 C
Second-orderharmonicdistortion f=100kHz,VIN_CM=mid-supply–0.5V –120 dBc C
f=1MHz,VIN_CM=mid-supply–0.5V –84 C
f=10kHz,VIN_CM=mid-supply–0.5V –137 C
Third-orderharmonicdistortion f=100kHz,VIN_CM=mid-supply–0.5V –130 dBc C
f=1MHz,VIN_CM=mid-supply–0.5V –105 C
f=1MHz,200-kHztonespacing,
Second-orderintermodulationdistortion VOUTenvelope=1VPP, –90 dBc C
VIN_CM=mid-supply–0.5V
f=1MHz,200-kHztonespacing,
Third-orderintermodulationdistortion VOUTenvelope=1VPP, –90 dBc C
VIN_CM=mid-supply–0.5V
Inputvoltagenoise f=100kHz 4.6 nV/√Hz C
Voltagenoise1/fcornerfrequency 215 Hz C
Inputcurrentnoise f=1MHz 0.75 pA/√Hz C
Currentnoise1/fcornerfrequency 31.7 kHz C
Overdriverecoverytime Overdrive=0.5V 55 ns C
Underdriverecoverytime Underdrive=0.5V 60 ns C
Closed-loopoutputimpedance f=100kHz 0.02 Ω C
Channel-to-channelcrosstalk f=10kHz –120 dB C
DCPERFORMANCE
Open-loopvoltagegain(AOL) 100 125 dB A
TA=25°C –400 ±65 400 A
Input-referredoffsetvoltage TA=–40°Cto+85°C –760 760 µV B
TA=–40°Cto+125°C –1060 1060 B
Inputoffsetvoltagedrift(2) TA=–40°Cto+85°C –6 ±1 6 µV/°C B
TA=–40°Cto+125°C –6.6 ±1.1 6.6 B
(1) Testlevels(allvaluessetbycharacterizationandsimulation):(A)100%testedat25°C;overtemperaturelimitsbycharacterizationand
simulation.(B)Nottestedinproduction;limitssetbycharacterizationandsimulation.(C)Typicalvalueonlyforinformation.
(2) Inputoffsetvoltagedrift,inputbiascurrentdrift,andinputoffsetcurrentdriftareaveragevaluescalculatedbytakingdataattheend
points,computingthedifference,anddividingbythetemperaturerange.
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Electrical Characteristics: V = 2.7 V (continued)
S
testconditionsunlessotherwisenoted:V =2.7V,V =0V,V =1V ,R =0Ω,R =2kΩ,G=1V/V,inputandoutput
S+ S– OUT PP F L
referencedtomid-supply,V =mid-supply–0.5V;T =25°C(unlessotherwisenoted)
IN_CM A
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
DCPERFORMANCE(continued)
TA=25°C 200 650 1000 A
Inputbiascurrent(3) TA=–40°Cto+85°C 120 1500 nA B
TA=–40°Cto+125°C 100 1800 B
Inputbiascurrentdrift(2) TA=–40°Cto+85°C –1.9 ±0.32 1.9 nA/°C B
TA=–40°Cto+125°C –3.5 ±0.37 2.1 B
TA=25°C –180 ±30 180 A
Inputoffsetcurrent TA=–40°Cto+85°C –215 ±30 215 nA B
TA=–40°Cto+125°C –240 ±30 240 B
Inputoffsetcurrentdrift(2) TA=–40°Cto+85°C –575 ±95 575 pA/°C B
TA=–40°Cto+125°C –600 ±100 600 B
INPUT
TA=25°C, –0.2 0 V A
<3-dBdegradationinCMRRlimit
Common-modeinputrange,low
TA=–40°Cto125°C, –0.2 0 V B
<3-dBdegradationinCMRRlimit
TA=25°C, 1.5 1.6 V A
<3-dBdegradationinCMRRlimit
Common-modeinputrange,high
TA=–40°Cto125°C, 1.5 1.6 V B
<3-dBdegradationinCMRRlimit
Inputlinearoperatingvoltagerange TA=25°C, –0.3to V C
<6-dBdegradationinTHD 1.75
Common-moderejectionratio 91 114 dB A
Inputimpedancecommon-mode 200||1.2 kΩ||pF C
Inputimpedancedifferentialmode 200||1 kΩ||pF C
OUTPUT
TA=25°C,G=5 0.15 0.2 V A
Outputvoltage,low
TA=–40°Cto+125°C,G=5 0.15 0.2 V B
TA=25°C,G=5 2.45 2.5 V A
Outputvoltage,high
TA=–40°Cto+125°C,G=5 2.45 2.5 V B
Outputsaturationvoltage,high TA=25°C,G=5 80 mV C
Outputsaturationvoltage,low TA=25°C,G=5 40 mV C
TA=25°C ±40 ±45 mA A
Outputcurrentdrive
TA=–40°Cto+125°C ±40 ±45 mA B
POWERSUPPLY
Specifiedoperatingvoltage 2.5 5.5 V B
TA=25°C 0.7 0.95 1.15 mA A
Quiescentoperatingcurrentperamplifier
TA=–40°Cto+125°C 0.6 1.6 mA B
Power-supplyrejectionratio(±PSRR) 91 108 dB A
(3) Currentisconsideredpositiveoutofthepin.
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7.6 Electrical Characteristics: V = 5 V
S
testconditionsunlessotherwisenoted:V =5V,V =0V,V =2V ,R =0Ω,R =1kΩ,G=1V/V,inputandoutput
S+ S– OUT PP F L
referencedtomid-supply;T =25°C(unlessotherwisenoted)
A
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
ACPERFORMANCE
VOUT=100mVPP,G=1 205 C
VOUT=100mVPP,G=2 100 C
Small-signalbandwidth MHz
VOUT=100mVPP,G=5 28 C
VOUT=100mVPP,G=10 11.8 C
Gain-bandwidthproduct VOUT=100mVPP,G=10 118 MHz C
Large-signalbandwidth VOUT=2VPP,G=2 87 MHz C
Bandwidthfor0.1-dBflatness VOUT=2VPP,G=2 29 MHz C
Slewrate,rise VOUT=2-Vstep,G=2 560 V/µs C
Slewrate,fall VOUT=2-Vstep,G=2 580 V/µs C
Risetime VOUT=2-Vstep,G=2 3 ns C
Falltime VOUT=2-VStep,G=2 3 ns C
Settlingtimeto1%,rise VOUT=2-Vstep,G=2 22 ns C
Settlingtimeto1%,fall VOUT=2-Vstep,G=2 22 ns C
Settlingtimeto0.1%,rise VOUT=2-Vstep,G=2 30 ns C
Settlingtimeto0.1%,fall VOUT=2-Vstep,G=2 30 ns C
Settlingtimeto0.01%,rise VOUT=2-Vstep,G=2 40 ns C
Settlingtimeto0.01%,fall VOUT=2-Vstep,G=2 45 ns C
Overshoot VOUT=2-Vstep,G=2 7.5% C
Undershoot VOUT=2-Vstep,G=2 5% C
f=10kHz –133 C
Second-orderharmonicdistortion f=100kHz –120 dBc C
f=1MHz –85 C
f=10kHz –140 C
Third-orderharmonicdistortion f=100kHz –130 dBc C
f=1MHz –105 C
f=1MHz,200-kHztonespacing,
Second-orderintermodulationdistortion –79 dBc C
VOUTenvelope=2VPP
f=1MHz,200-kHztonespacing,
Third-orderintermodulationdistortion –91 dBc C
VOUTenvelope=2VPP
Signal-to-noiseratio(SNR) f=1kHz,VOUT=1VRMS, 0.00013% C
22-kHzbandwidth –117.6 dBc C
0.00003% C
Totalharmonicdistortion(THD) f=1kHz,VOUT=1VRMS
–130 dBc C
Inputvoltagenoise f=100KHz 4.6 nV/√Hz C
Voltagenoise1/fcornerfrequency 215 Hz C
Inputcurrentnoise f>1MHz 0.75 pA/√Hz C
Currentnoise1/fcornerfrequency 31.7 kHz C
Overdriverecoverytime Overdrive=0.5V 55 ns C
Underdriverecoverytime Underdrive=0.5V 60 ns C
Closed-loopoutputimpedance f=100kHz 0.02 Ω C
Channel-to-channelcrosstalk f=10kHz –120 dB C
DCPERFORMANCE
Open-loopvoltagegain(AOL) 100 122 dB A
TA=25°C –400 ±65 400 A
Input-referredoffsetvoltage TA=–40°Cto+85°C –765 765 µV B
TA=–40°Cto+125°C –1080 1080 B
(1) Testlevels(allvaluessetbycharacterizationandsimulation):(A)100%testedat25°C;overtemperaturelimitsbycharacterizationand
simulation.(B)Nottestedinproduction;limitssetbycharacterizationandsimulation.(C)Typicalvalueonlyforinformation.
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Electrical Characteristics: V = 5 V (continued)
S
testconditionsunlessotherwisenoted:V =5V,V =0V,V =2V ,R =0Ω,R =1kΩ,G=1V/V,inputandoutput
S+ S– OUT PP F L
referencedtomid-supply;T =25°C(unlessotherwisenoted)
A
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
DCPERFORMANCE(continued)
Inputoffsetvoltagedrift(2) TA=–40°Cto+85°C –6.1 ±1 6.1 µV/°C B
TA=–40°Cto+125°C –6.8 ±1.1 6.8 B
TA=25°C 200 650 1000 A
Inputbiascurrent(3) TA=–40°Cto+85°C 120 1550 nA B
TA=–40°Cto+125°C 100 1850 B
Inputbiascurrentdrift(2) TA=–40°Cto+85°C ±0.34 ±2 nA/°C B
TA=–40°Cto+125°C ±0.38 ±3.8 B
TA=25°C ±30 ±180 A
Inputoffsetcurrent TA=–40°Cto+85°C ±30 ±215 nA B
TA=–40°Cto+125°C ±30 ±250 B
Inputoffsetcurrentdrift(2) TA=–40°Cto+85°C ±100 ±600 pA/°C B
TA=–40°Cto+125°C ±110 ±660 B
INPUT
TA=25°C, –0.2 0 V A
<3-dBdegradationinCMRRlimit
Common-modeinputrangelow
TA=–40°Cto125°C, –0.2 0 V B
<3-dBdegradationinCMRRlimit
TA=25°C, 3.8 3.9 V A
<3-dBdegradationinCMRRlimit
Common-modeinputrangehigh
TA=–40°Cto125°C, 3.8 3.9 V B
<3-dBdegradationinCMRRlimit
Inputlinearoperatingvoltagerange TA=25°C, –0.3to V C
<6-dBdegradationinTHD 4.05
Common-moderejectionratio 94 116 dB A
Inputimpedancecommonmode 200||1.2 kΩ||pF C
Inputimpedancedifferentialmode 200||1 kΩ||pF C
OUTPUT
TA=25°C,G=5 0.15 0.2 V A
Outputvoltagelow
TA=–40°Cto+125°C,G=5 0.15 0.2 V B
TA=25°C,G=5 4.75 4.8 V A
Outputvoltagehigh
TA=–40°Cto+125°C,G=5 4.75 4.8 V B
Outputsaturationvoltage,high TA=25°C,G=5 100 mV C
Outputsaturationvoltage,low TA=25°C,G=5 50 mV C
TA=25°C ±40 ±50 mA A
Outputcurrentdrive
TA=–40°Cto+125°C ±40 ±50 mA B
POWERSUPPLY
Specifiedoperatingvoltage 2.5 5.5 V B
TA=25°C 0.8 1.0 1.2 mA A
Quiescentoperatingcurrentperamplifier
TA=–40°Cto+125°C 0.65 1.7 mA B
Power-supplyrejectionratio(±PSRR) 94 108 dB A
(2) Inputoffsetvoltagedrift,inputbiascurrentdrift,andinputoffsetcurrentdriftareaveragevaluescalculatedbytakingdataattheend
points,computingthedifference,anddividingbythetemperaturerange.
(3) Currentisconsideredpositiveoutofthepin.
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7.7 Typical Characteristics
7.7.1 Typical Characteristics:V =2.7V
S
testconditionsunlessotherwisenoted:V =2.7V,V =0V,V =1V ,R =0Ω,R =2kΩ,G=1V/V,inputandoutput
S+ S– OUT PP F L
referencedtomid-supply,V =mid-supply–0.5V;T =25°C(unlessotherwisenoted)
IN_CM A
Table1.TableofGraphs
FIGURETITLE FIGURELOCATION
Small-SignalFrequencyResponse Figure1
Large-SignalFrequencyResponse Figure2
NoninvertingPulseResponse Figure3
InvertingPulseResponse Figure4
SlewRatevsOutputVoltageStep Figure5
OutputOverdriveRecovery Figure6
HarmonicDistortionvsFrequency Figure7
HarmonicDistortionvsLoadResistance Figure8
HarmonicDistortionvsOutputVoltage Figure9
HarmonicDistortionvsGain Figure10
OutputVoltageSwingvsLoadResistance Figure11
OutputSaturationVoltagevsLoadCurrent Figure12
OutputImpedancevsFrequency Figure13
FrequencyResponseWithCapacitiveLoad Figure14
SeriesOutputResistorvsCapacitiveLoad Figure17
Input-ReferredNoisevsFrequency Figure16
Open-LoopGainvsFrequency Figure15
Common-Mode,Power-SupplyRejectionRatiosvsFrequency Figure18
CrosstalkvsFrequency Figure19
InputOffsetVoltage Figure22
InputOffsetVoltagevsFree-AirTemperature Figure20
InputOffsetVoltageDrift Figure46
InputOffsetCurrent Figure23
InputOffsetCurrentvsFree-AirTemperature Figure24
InputOffsetCurrentDrift Figure25
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test conditions unless otherwise noted: V = 2.7 V, V = 0 V, V = 1 V , R = 0 Ω, R = 2 kΩ, G = 1 V/V,
S+ S– OUT PP F L
inputandoutputreferencedtomid-supply,V =mid-supply– 0.5V;T =25°C(unlessotherwisenoted)
IN_CM A
21 21
G = 10 VS= 2.7 V, G = 10 VS= 2.7 V,
18 VOUT= 100 mVpp, 18 VOUT= 1 Vpp,
15 RL= 1 kW 15 RL= 1 kW
B 12 G = 5 B 12 G = 5
d d
de - 9 de - 9
u u
gnit 6 gnit 6
Ma G = 2 Ma G = 2
n 3 n 3
Gai Gai
0 0 G = 1
G = 1
-3 -3
G = -1
-6 -6 G = -1
-9 -9
100k 1M 10M 100M 1G 100k 1M 10M 100M 1G
f - Frequency - Hz f - Frequency - Hz
Figure1.Small-SignalFrequencyResponse Figure2.Large-SignalFrequencyResponse
2.5 3
VS= 2.7 V, VS= 2.7 V,
G = 1, G = -1,
RF= 0W 2.5 RF= 1 kW
2 RL= 1 kW RL= 1 kW
Output Voltage - V 1.51 VOUT= 1.5 Vpp Output Voltage - V1.52 VVOOUUTT== 0 2.5 V Vpppp
V- O VOUT= 0.5 Vpp V- O 1
0.5
0.5
0 0
0 500 1000 0 500 1000
t - Time - ns t - Time - ns
Figure3.NoninvertingPulseResponse Figure4.InvertingPulseResponse
300 0.75 3.75
VGS == 2 2,.7 V, VGS == 5 2,.7 V, VIN 3.25
250 RF= 1 kW RF= 1 kW, VOUT
RL= 1 kW Falling 0.5 RL= 1 kW 2.75
Slew Rate - V/sm 112050000 Rising V- Input Voltage - VI0.25 1120....27275555- Output Voltage - VO
0.25V
0
-0.25
50
-0.75
0 -0.25 -1.25
0.5 0.6 0.7 0.8 0.9 1 0 500 1000 1500 2000
Output Voltage Step -V t - Time - ns
Figure5.SlewRatevsOutputVoltageStep Figure6.OutputOverdriveRecovery
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