Very Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp

51 Pages·2013·1.95 MB·English

OPA836
OPA2836
www.ti.com SLOS712E–JANUARY2011–REVISEDSEPTEMBER2013
Very Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp
CheckforSamples:OPA836,OPA2836
FEATURES DESCRIPTION
1
• LowPower: Fabricated using the industry-leading BiCom-3x
(SiGe complimentary bipolar) process, the OPA836
– SupplyVoltage:2.5Vto5.5V
and OPA2836 are single and dual ultra low-power,
– QuiescentCurrent:1mA (Typ) rail-to-rail output, negative rail input, voltage-feedback
– PowerDownMode:0.5µATtyp) operational amplifiers designed to operate over a
power supply range of 2.5 V to 5.5 V Single Supply
• Bandwidth:205MHz
and ±1.25 V to ±2.75 V dual supply. Consuming only
• Slew Rate:560V/µs 1 mA per channel and a unity gain bandwidth of 205
• RiseTime:3ns(2V ) MHz, these amplifiers set an industry leading power-
STEP
to-performanceratiofor rail-to-railamplifiers.
• SettlingTime:22ns(2V )
STEP
• OverdriveRecoveryTime:60ns For battery powered portable applications where
power is of key importance, the OPA836's and
• SNR: 0.00013% (–117.6dBc)at1kHz(1V )
RMS OPA2836's low power consumption and high
• THD: 0.00003% (–130dBc)at1kHz(1VRMS) frequency performance offers designers performance
• HD /HD :–85dBc/ –105dBcat1MHz(2V ) versuspower notattainableinotherdevices.Coupled
2 3 PP
with a power savings mode to reduce current to <1.5
• Input VoltageNoise:4.6nV/rtHz(f=100kHz)
μA, the device offers an attractive solution for high
• Input OffsetVoltage:65 µV(400 µVMax) frequencyamplifiersinbatterypoweredapplications.
• CMRR:116dB
The OPA836 and OPA2836 are offered in following
• OutputCurrentDrive:50mA packageoptions:
• RRO:Rail-to-RailOutput • OPA836 Single: SOT23-6 (DBV), and 10 pin
• Input VoltageRange: –0.2Vto3.9V WQFN(RUN)withintegratedgainresistors.
(5VSupply) • OPA2836 Dual: SOIC-8 (D), VSSOP (MSOP) -10
(DGS), 10 pin WQFN (RUN), and 10 pin UQFN
• OperatingTemperatureRange:
(RMC).
–40°Cto +125°C
The OPA836 RUN package option includes
APPLICATIONS integrated gain setting resistors for smallest possible
footprint on a printed circuit board (≈ 2mm x 2mm).
• LowPowerSignalConditioning
By adding circuit traces on the PCB, gains of +1, –1,
• AudioADCInputBuffer –1.33, +2, +2.33, –3, +4, –4, +5, –5.33, +6.33, –7, +8
• LowPowerSARand ΔΣADCDriver and inverting attenuations of –0.1429, –0.1875,
–0.25, –0.33, –0.75 can be achieved. See the
• PortableSystems
ApplicationInformation sectionfor details.
• LowPowerSystems
The devices are characterized for operation over the
• HighDensitySystems
extended industrial temperature range –40°C to
125°C.
0
--4200 0V VVSIING 1k 22kk2.7V OP2A.78VV3S+6 1.35V100VSIG +In5VVDD 2R.E5FV DESCRIPTION OPA8S3IN6GRLEeSlateDdUAPLrSoduTcRtIPsLES QUADS
Bc -60 VS- 2.2nF -InADS8326 Rail-to-Rail — OPA2830 — OPA4830
A- dIN -80 1k 1k RPoawil-etor-Rail,Low OPA835 OPA2835 — —
-100 Rail-to-Rail,Fixed OPA832 OPA2832 OPA3832 —
Gain
-120 General-Purpose,High OPA690 OPA2690 OPA3690 —
SlewRate
-140
0 20,000 40,000 60,000 80,000 100,000 120,000 Low-Noise,DC OPA820 OPA2822 — OPA4820
Frequency (Hz) Precision
1
Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof
TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©2011–2013,TexasInstrumentsIncorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarilyincludetestingofallparameters.
OPA836
OPA2836
SLOS712E–JANUARY2011–REVISEDSEPTEMBER2013 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriateprecautions.Failuretoobserveproperhandlingandinstallationprocedurescancausedamage.
ESDdamagecanrangefromsubtleperformancedegradationtocompletedevicefailure.Precisionintegratedcircuitsmaybemore
susceptibletodamagebecauseverysmallparametricchangescouldcausethedevicenottomeetitspublishedspecifications.
PACKAGING/ORDERINGINFORMATION(1)
(1) Forthemostcurrentpackageandorderinginformation,seethePackageOptionAddendumattheendofthisdocument,orseetheTI
websiteatwww.ti.com.
ABSOLUTE MAXIMUM RATINGS
UNITS
V toV Supplyvoltage 5.5
S– S+
V Inputvoltage V -0.7VtoV +0.7V
I S– S+
V Differentialinputvoltage 1V
ID
I Continuousinputcurrent 0.85mA
I
I Continuousoutputcurrent 60mA
O
Continuouspowerdissipation SeeThermalCharacteristicsSpecification
T Maximumjunctiontemperature 150°C
J
T Operatingfree-airtemperaturerange –40°Cto125°C
A
T Storagetemperaturerange –65°Cto150°C
stg
HBM 6kV
ESD
CDM 1kV
ratings
MM 200V
THERMAL INFORMATION
OPA836 OPA2836
VSSOP
THERMALMETRIC(1) SOT23-6 WQFN-10 SOIC-8 (MSOP)-10 WQFN-10 UQFN-10 UNITS
(DBV) (RUN) (D) (DGS) (RUN) (RMC)
6PINS 10PINS 8PINS 10PINS 10PINS 10PINS
θ Junction-to-ambientthermalresistance 194 145.8 150.1 206 145.8 143.2
JA
θ Junction-to-case(top)thermalresistance 129.2 75.1 83.8 75.3 75.1 49.0
JCtop
θ Junction-to-boardthermalresistance 39.4 38.9 68.4 96.2 38.9 61.9
JB
°C/W
ψ Junction-to-topcharacterizationparameter 25.6 13.5 33.0 12.9 13.5 3.3
JT
ψ Junction-to-boardcharacterizationparameter 38.9 104.5 67.9 94.6 104.5 61.9
JB
θ Junction-to-case(bottom)thermalresistance n/a n/a n/a n/a n/a n/a
JCbot
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953.
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SPECIFICATIONS: V = 2.7 V
S
Testconditionsunlessotherwisenoted:V =+2.7V,V =0V,V =1V ,R =0Ω,R =1kΩ,G=1V/V,Inputand
S+ S– OUT PP F L
OutputReferencedtomid-supply.T =25°C.Unlessotherwisenoted
A
TEST
PARAMETER CONDITIONS MIN TYP MAX UNITS LEVEL(1)
ACPERFORMANCE
VOUT=100mVPP,G=1 200
VOUT=100mVPP,G=2 100
Small-signalbandwidth MHz C
VOUT=100mVPP,G=5 26
VOUT=100mVPP,G=10 11
Gain-bandwidthproduct VOUT=100mVPP,G=10 110 MHz C
Large-signalbandwidth VOUT=1VPP,G=2 60 MHz C
Bandwidthfor0.1dBflatness VOUT=1VPP,G=2 25 MHz C
Slewrate,Rise/Fall 260/240 V/µs C
Rise/Falltime 4/4.5 ns C
Settlingtimeto1%,Rise/Fall 15/15 ns C
VOUT=1VSTEP,G=2
Settlingtimeto0.1%,Rise/Fall 30/25 ns C
Settlingtimeto0.01%,Rise/Fall 50/45 ns C
Overshoot/Undershoot 5/3 % C
f=10kHz,VIN_CM=mid-supply–0.5V -133 C
2ndOrderHarmonicDistortion f=100kHz,VIN_CM=mid-supply–0.5V -120 dBc C
f=1MHz,VIN_CM=mid-supply–0.5V -84 C
f=10kHz,VIN_CM=mid-supply–0.5V -137 C
3rdOrderHarmonicDistortion f=100kHz,VIN_CM=mid-supply–0.5V -130 dBc C
f=1MHz,VIN_CM=mid-supply–0.5V -105 C
2ndOrderIntermodulationDistortion f=1MHz,200kHzToneSpacing,VOUT -90 dBc C
3rdOrderIntermodulationDistortion E0.n5vVelope=1VPP,VIN_CM=mid-supply– -90 dBc C
Inputvoltagenoise f=100KHz 4.6 nV/√Hz C
VoltageNoise1/fcornerfrequency 215 Hz C
Inputcurrentnoise f=1MHz 0.75 pA/√Hz C
CurrentNoise1/fcornerfrequency 31.7 kHz C
Overdriverecoverytime,Over/Under Overdrive=0.5V 55/60 ns C
Closed-loopoutputimpedance f=100kHz 0.02 Ω C
Channeltochannelcrosstalk(OPA2836) f=10kHz -120 dB C
(1) Testlevels(allvaluessetbycharacterizationandsimulation):(A)100%testedat25°C;overtemperaturelimitsbycharacterizationand
simulation.(B)Nottestedinproduction;limitssetbycharacterizationandsimulation.(C)Typicalvalueonlyforinformation.
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SPECIFICATIONS: V = 2.7 V
S
Testconditionsunlessotherwisenoted:V =+2.7V,V =0V,V =1V ,R =0Ω,R =1kΩ,G=1V/V,Inputand
S+ S– OUT PP F L
OutputReferencedtomid-supply.T =25°C.Unlessotherwisenoted
A
TEST
PARAMETER CONDITIONS MIN TYP MAX UNITS LEVEL(1)
DCPERFORMANCE
Open-loopvoltagegain(AOL) 100 125 dB A
TA=25°C ±65 ±400 A
TA=0°Cto70°C ±680
Inputreferredoffsetvoltage µV
TA=–40°Cto85°C ±760 B
TA=–40°Cto125°C ±1060
TA=0°Cto70°C ±1 ±6.2
Inputoffsetvoltagedrift(2) TA=–40°Cto85°C ±1 ±6 µV/°C B
TA=–40°Cto125°C ±1.1 ±6.6
TA=25°C 300 650 1000 A
TA=0°Cto70°C 190 1400
Inputbiascurrent nA
TA=–40°Cto85°C 120 1500 B
TA=–40°Cto125°C 120 1800
TA=0°Cto70°C ±0.33 ±2
Inputbiascurrentdrift(2) TA=–40°Cto85°C ±0.32 ±1.9 nA/°C B
TA=–40°Cto125°C ±0.37 ±2.1
TA=25°C ±30 ±180 A
TA=0°Cto70°C ±30 ±200
Inputoffsetcurrent nA
TA=–40°Cto85°C ±30 ±215 B
TA=–40°Cto125°C ±30 ±240
TA=0°Cto70°C ±77 ±460
Inputoffsetcurrentdrift(2) TA=–40°Cto85°C ±95 ±575 pA/°C B
TA=–40°Cto125°C ±100 ±600
INPUT
TA=25°C,<3dBdegradationinCMRRlimit –0.2 0 V A
Common-modeinputrangelow
TA=–40°Cto125°C,<3dBdegradationinCMRRlimit –0.2 0 V B
TA=25°C,<3dBdegradationinCMRRlimit 1.5 1.6 V A
Common-modeinputrangehigh
TA=–40°Cto125°C,<3dBdegradationinCMRRlimit 1.5 1.6 V B
Inputlinearoperatingvoltagerange TA=25°C,<6dBdegradationinTHD -0.3to1.75 V C
Common-moderejectionratio 91 114 dB A
Inputimpedancecommonmode 200||1.2 kΩ||pF C
Inputimpedancedifferentialmode 200||1 kΩ||pF C
OUTPUT
TA=25°C,G=5 0.15 0.2 V A
Linearoutputvoltagelow
TA=–40°Cto125°C,G=5 0.15 0.2 V B
TA=25°C,G=5 2.45 2.5 V A
Linearoutputvoltagehigh
TA=–40°Cto125°C,G=5 2.45 2.5 V B
Outputsaturationvoltage,High/Low TA=25°C,G=5 80/40 mV C
TA=25°C ±40 ±45 mA A
Linearoutputcurrentdrive
TA=–40°Cto125°C ±40 ±45 mA B
(1) Testlevels(allvaluessetbycharacterizationandsimulation):(A)100%testedat25°C;overtemperaturelimitsbycharacterizationand
simulation.(B)Nottestedinproduction;limitssetbycharacterizationandsimulation.(C)Typicalvalueonlyforinformation.
(2) InputOffsetVoltageDrift,InputBiasCurrentDrift,andInputOffsetCurrentDriftareaveragevaluescalculatedbytakingdataattheend
points,computingthedifference,anddividingbythetemperaturerange.
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SPECIFICATIONS: V = 2.7 V (continued)
S
Testconditionsunlessotherwisenoted:V =+2.7V,V =0V,V =1V ,R =0Ω,R =1kΩ,G=1V/V,Inputand
S+ S– OUT PP F L
OutputReferencedtomid-supply.T =25°C.Unlessotherwisenoted
A
TEST
PARAMETER CONDITIONS MIN TYP MAX UNITS LEVEL(1)
GAINSETTINGRESISTORS(OPA836IRUNONLY)
ResistorFB1toFB2 DCresistance 1584 1600 1616 Ω A
ResistorFB2toFB3 DCresistance 1188 1200 1212 Ω A
ResistorFB3toFB4 DCresistance 396 400 404 Ω A
ResistorTolerance DCresistance ±1 % A
ResistorTemperatureCoefficient DCresistance <10 PPM C
POWERSUPPLY
Specifiedoperatingvoltage 2.5 5.5 V B
Quiescentoperatingcurrentper TA=25°C 0.7 0.95 1.15 mA A
amplifer TA=–40°Cto125°C 0.6 1.4 mA B
Powersupplyrejection(±PSRR) 91 108 dB A
POWERDOWN
Enablevoltagethreshold Specified"on"aboveVS-+2.1V 2.1 V A
Disablevoltagethreshold Specified"off"belowVS-+0.7V 0.7 V A
Powerdownpinbiascurrent PD=0.5V 20 500 nA A
Powerdownquiescentcurrent PD=0.5V 0.5 1.5 µA A
Turn-ontimedelay TimefromPD=hightoVOUT=90%offinalvalue 200 ns C
Turn-offtimedelay TimefromPD=lowtoVOUT=10%oforiginalvalue 25 ns C
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SPECIFICATIONS: V = 5 V
S
Testconditionsunlessotherwisenoted:V =+5V,V =0V,V =2V ,R =0Ω,R =1kΩ,G=1V/V,InputandOutput
S+ S– OUT PP F L
Referencedtomid-supply.T =25°C.Unlessotherwisenoted.
A
TEST
PARAMETER CONDITIONS MIN TYP MAX UNITS LEVEL(1)
ACPERFORMANCE
VOUT=100mVPP,G=1 205
VOUT=100mVPP,G=2 100
Small-signalbandwidth MHz C
VOUT=100mVPP,G=5 28
VOUT=100mVPP,G=10 11.8
Gain-bandwidthproduct VOUT=100mVPP,G=10 118 MHz C
Large-signalbandwidth VOUT=2VPP,G=2 87 MHz C
Bandwidthfor0.1dBflatness VOUT=2VPP,G=2 29 MHz C
Slewrate,Rise/Fall 560/580 V/µs C
Rise/Falltime 3/3 ns C
Settlingtimeto1%,Rise/Fall 22/22 ns C
VOUT=2VStep,G=2
Settlingtimeto0.1%,Rise/Fall 30/30 ns C
Settlingtimeto0.01%,Rise/Fall 40/45 ns C
Overshoot/Undershoot 7.5/5 % C
f=10kHz –133 C
2ndOrderHarmonicDistortion f=100kHz –120 dBc C
f=1MHz –85 C
f=10kHz –140 C
3rdOrderHarmonicDistortion f=100kHz –130 dBc C
f=1MHz –105 C
2ndOrderIntermodulationDistortion f=1MHz,200kHzToneSpacing, –79 dBc C
3rdOrderIntermodulationDistortion VOUTEnvelope=2VPP –91 dBc C
SignaltoNoiseRatio,SNR f=1kHz,VOUT=1VRMS,22kHz 0.00013 % C
bandwidth -117.6 dBc C
0.00003 % C
TotalHarmonicDistortion,THD f=1kHz,VOUT=1VRMS
-130 dBc C
Inputvoltagenoise f=100KHz 4.6 nV/√Hz C
VoltageNoise1/fcornerfrequency 215 Hz C
Inputcurrentnoise f>1MHz 0.75 pA/√Hz C
CurrentNoise1/fcornerfrequency 31.7 kHz C
Overdriverecoverytime,Over/Under Overdrive=0.5V 55/60 ns C
Closed-loopoutputimpedance f=100kHz 0.02 Ω C
Channeltochannelcrosstalk(OPA2836) f=10kHz -120 dB C
(1) Testlevels(allvaluessetbycharacterizationandsimulation):(A)100%testedat25°C;overtemperaturelimitsbycharacterizationand
simulation.(B)Nottestedinproduction;limitssetbycharacterizationandsimulation.(C)Typicalvalueonlyforinformation.
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SPECIFICATIONS: V = 5 V
S
Testconditionsunlessotherwisenoted:V =+5V,V =0V,V =2V ,R =0Ω,R =1kΩ,G=1V/V,Inputand
S+ S– OUT PP F L
OutputReferencedtomid-supply.T =25°C.Unlessotherwisenoted.
A
TEST
PARAMETER CONDITIONS MIN TYP MAX UNITS LEVEL(1)
DCPERFORMANCE
Open-loopvoltagegain(AOL) 100 122 dB A
TA=25°C ±65 ±400 A
TA=0°Cto70°C ±685
Inputreferredoffsetvoltage µV
TA=–40°Cto85°C ±765 B
TA=–40°Cto125°C ±1080
TA=0°Cto70°C ±1.05 ±6.3
Inputoffsetvoltagedrift(2) TA=–40°Cto85°C ±1 ±6.1 µV/°C B
TA=–40°Cto125°C ±1.1 ±6.8
TA=25°C 300 650 1000 A
TA=0°Cto70°C 190 1400
Inputbiascurrent nA
TA=–40°Cto85°C 120 1550 B
TA=–40°Cto125°C 120 1850
TA=0°Cto70°C ±0.34 ±2
Inputbiascurrentdrift(2) TA=–40°Cto85°C ±0.34 ±2 nA/°C B
TA=–40°Cto125°C ±0.38 ±2.3
TA=25°C ±30 ±180 A
TA=0°Cto70°C ±30 ±200
Inputoffsetcurrent nA
TA=–40°Cto85°C ±30 ±215 B
TA=–40°Cto125°C ±30 ±250
TA=0°Cto70°C ±80 ±480
Inputoffsetcurrentdrift(2) TA=–40°Cto85°C ±100 ±600 pA/°C B
TA=–40°Cto125°C ±110 ±660
INPUT
TA=25°C,<3dBdegradationinCMRRlimit –0.2 0 V A
Common-modeinputrangelow TA=–40°Cto125°C,<3dBdegradationinCMRR –0.2 0 V B
limit
TA=25°C,<3dBdegradationinCMRRlimit 3.8 3.9 V A
Common-modeinputrangehigh TA=–40°Cto125°C,<3dBdegradationinCMRR 3.8 3.9 V B
limit
Inputlinearoperatingvoltagerange TA=25°C,<6dBdegradationinTHD -0.3to V C
4.05
Common-moderejectionratio 94 116 dB A
Inputimpedancecommonmode 200||1.2 kΩ||pF C
Inputimpedancedifferentialmode 200||1 kΩ||pF C
OUTPUT
TA=25°C,G= 0.15 0.2 V A
Linearoutputvoltagelow
TA=–40°Cto125°C,G=5 0.15 0.2 V B
TA=25°C,G=5 4.75 4.8 V A
Linearoutputvoltagehigh
TA=–40°Cto125°C,G=5 4.75 4.8 V B
Outputsaturationvoltage,High/Low TA=25°C,G=5 100/50 mV C
TA=25°C ±40 ±50 mA A
Linearoutputcurrentdrive
TA=–40°Cto125°C ±40 ±50 mA B
(1) Testlevels(allvaluessetbycharacterizationandsimulation):(A)100%testedat25°C;overtemperaturelimitsbycharacterizationand
simulation.(B)Nottestedinproduction;limitssetbycharacterizationandsimulation.(C)Typicalvalueonlyforinformation.
(2) InputOffsetVoltageDrift,InputBiasCurrentDrift,andInputOffsetCurrentDriftareaveragevaluescalculatedbytakingdataattheend
points,computingthedifference,anddividingbythetemperaturerange.
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SPECIFICATIONS: V = 5 V (continued)
S
Testconditionsunlessotherwisenoted:V =+5V,V =0V,V =2V ,R =0Ω,R =1kΩ,G=1V/V,Inputand
S+ S– OUT PP F L
OutputReferencedtomid-supply.T =25°C.Unlessotherwisenoted.
A
TEST
PARAMETER CONDITIONS MIN TYP MAX UNITS LEVEL(1)
GAINSETTINGRESISTORS(OPA836IRUNONLY)
ResistorFB1toFB2 DCresistance 1584 1600 1616 Ω A
ResistorFB2toFB3 DCresistance 1188 1200 1212 Ω A
ResistorFB3toFB4 DCresistance 396 400 404 Ω A
ResistorTolerance DCresistance ±1 % A
ResistorTemperatureCoefficient DCresistance <10 PPM C
POWERSUPPLY
Specifiedoperatingvoltage 2.5 5.5 V B
Quiescentoperatingcurrentper TA=25°C 0.8 1.0 1.2 mA A
amplifier TA=–40°Cto125°C 0.65 1.5 mA B
Powersupplyrejection(±PSRR) 94 108 dB A
POWERDOWN
Enablevoltagethreshold Specified"on"aboveVS–+2.1V 2.1 V A
Disablevoltagethreshold Specified"off"belowVS–+0.7V 0.7 V A
Powerdownpinbiascurrent PD=0.5V 20 500 nA A
Powerdownquiescentcurrent PD=0.5V 0.5 1.5 µA A
Turn-ontimedelay TimefromPD=hightoVOUT=90%offinalvalue 170 ns C
Turn-offtimedelay TimefromPD=lowtoVOUT=10%oforiginalvalue 35 ns C
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DEVICE INFORMATION
PIN CONFIGURATIONS
OPA836(TOP VIEW) OPA836(TOPVIEW)
SOT23-6(DBV) WQFN-10(RUN)
V
S+
VOUT 1 6 VS+
VOUT 1 10 9 FB1
V 2 5 PD
S- + - 1.6k
- +
VIN+ 3 4 VIN- VIN- 2 8 FB2
1.2k
VIN+ 3 7 FB3
400
FB
PD 4 6 4
5
V
S-
OPA2836(TOP VIEW) OPA2836(TOPVIEW)
SOIC-8(D) VSSOP(MSOP)-10(DGS)
VOUT1 1 8 VS+ VOUT1 1 10 VS+
VIN1- 2 - 7 VOUT2 VIN1- 2 - 9 VOUT2
+ +
V 3 6 V V 3 8 V
IN1+ - IN2- IN1+ - IN2-
VS- 4 + 5 VIN2+ VS- 4 + 7 VIN2+
PD1 5 6 PD2
OPA2836(TOPVIEW)
WQFN-10(RUN), UQFN-10(RMC)
V
S+
VOUT1 1 10 9 VOUT2
- + + -
V 2 8 V
IN1- IN2-
VIN1+ 3 7 VIN2+
PD1 4 6 PD2
5
V
S-
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PINFUNCTIONS
PIN
DESCRIPTION
NUMBER NAME
OPA836DBVPACKAGE
1 V Amplifieroutput
OUT
2 V Negativepowersupplyinput
S–
3 V Amplifiernon-invertinginput
IN+
4 V Amplifierinvertinginput
IN–
5 PD AmplifierPowerDown,low=lowpowermode,high=normaloperation(PINMUSTBEDRIVEN)
6 V Positivepowersupplyinput
S+
OPA836RUNPACKAGE
1 V Amplifieroutput
OUT
2 V Amplifierinvertinginput
IN–
3 V Amplifiernon-invertinginput
IN+
4 PD AmplifierPowerDown,low=lowpowermode,high=normaloperation(PINMUSTBEDRIVEN)
5 V Negativepowersupplyinput
S–
6 FB Connectiontobottomof250Ωinternalgainsettingresistors
4
7 FB Connectiontojunctionof750and250Ωinternalgainsettingresistors
3
8 FB Connectiontojunctionof1kand750Ωinternalgainsettingresistors
2
9 FB Connectiontotopof1kΩinternalgainsettingresistors
1
10 V Positivepowersupplyinput
S+
OPA2836DPACKAGE
1 V Amplifier1output
OUT1
2 V Amplifier1invertinginput
IN1–
3 V Amplifier1non-invertinginput
IN1+
4 V Negativepowersupplyinput
S–
5 V Amplifier2non-invertinginput
IN2+
6 V Amplifier2invertinginput
IN2–
7 V Amplifier2output
OUT2
8 V Positivepowersupplyinput
S+
OPA2836DSGPACKAGE
1 V Amplifier1output
OUT1
2 V Amplifier1invertinginput
IN1–
3 V Amplifier1non-invertinginput
IN1+
4 V Negativepowersupplyinput
S–
5 PD1 Amplifier1PowerDown,low=lowpowermode,high=normaloperation(PINMUSTBEDRIVEN)
6 PD2 Amplifier2PowerDown,low=lowpowermode,high=normaloperation(PINMUSTBEDRIVEN)
7 V Amplifier2non-invertinginput
IN2+
8 V Amplifier2invertinginput
IN2–
9 V Amplifier2output
OUT2
10 V Positivepowersupplyinput
S+
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