Vertical External Cavity Surface Emitting Lasers: VECSEL Technology and Applications

410 Pages·2021·14.248 MB·English

by  Michael Jetter, Peter Michler

VerticalExternalCavitySurfaceEmittingLasers

Vertical External Cavity Surface Emitting
Lasers
VECSEL Technology and Applications
Edited by
Michael Jetter
Peter Michler
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v
Contents
Preface xiii
PartI ContinuouswaveVECSEL 1
1 HistoryofOpticallyPumpedSemiconductor
Lasers–VECSELs 3
MarkE.Kuznetsov
1.1 Introduction 3
1.2 OPS-VECSELs:ConceptandHistory 4
1.3 Micracor 8
1.4 OPSLDevelopmentatMicracor:FirstSteps 11
1.5 OPSDevelopmentatMicracor:PushingForward 14
1.6 OPSDevelopmentatMicracor:FinalChapter 16
1.7 VECSELsbeyondMicracor 20
References 22
2 VECSELsintheWavelengthRange1.18–1.55𝛍m 27
AnttiRantamäkiandMirceaGuina
2.1 Introduction 27
2.2 OverviewofGaAs-basedGainMirrorTechnologiesforLong-wavelength
InfraredVECSELs 28
2.2.1 InGaAsQWs 28
2.2.2 GaInNAsQWs 28
2.2.3 InAsQDs 30
2.2.4 GaAsSbQWs 31
2.3 OverviewofInP-basedGainMirrorTechnologiesforLong-wavelength
InfraredVECSELs 32
2.3.1 MonolithicInP-basedDBRs 32
2.3.2 DielectricandMetamorphicDBRs 33
2.3.3 Semiconductor-dielectric-metalCompoundMirrors 34
2.3.4 Wafer-bondedGaAs-basedDBRs 37
2.3.4.1 DirectWaferBonding 39
vi Contents
2.3.4.2 LowTemperatureBonding 44
2.3.5 GainStructuresinTransmission 47
2.4 Conclusion 50
References 50
3 Single-frequencyandHighPowerOperationof2–3Micron
VECSEL 63
MarcelRattunde,PeterHoll,andJoachimWagner
3.1 Introduction 63
3.2 SemiconductorLasersfortheMIRRange 64
3.3 III-SbMaterialSystem 66
3.4 2–3μmVECSELDesign 68
3.4.1 StandardBarrierPumpedStructures 68
3.4.2 In-wellPumping 69
3.4.3 LowQuantumDeficitBarrierPumping 70
3.5 MountingTechnologies 72
3.5.1 IntracavityHeatspreader 74
3.5.2 ThinDevice 76
3.5.3 Double-sidedHeatspreader 77
3.6 Single-frequencyOperation(SFO)of2–3μmVECSEL 78
3.6.1 KeyParametersforSingle-FrequencyOperation 79
3.6.2 SFOwithIntracavityHeatspreader 81
3.6.2.1 LaserCavitySetup 82
3.6.2.2 WavelengthTuning 83
3.6.2.3 EmissionLinewidth 85
3.6.2.4 ActiveStabilizationandInfluenceofSamplingTime 88
3.6.2.5 Conclusion 90
3.6.3 SFOwithWedgedHeatspreader 91
3.6.4 SFOwithMicrocavityVECSELs 92
3.6.5 SFOwithoutIntracavityHeatspreader 94
3.7 Conclusion 99
References 101
4 HighlyCoherentSingle-FrequencyTunableVeCSELs:Concept,
Technology,andPhysicalStudy 109
MikhaelMyara
4.1 Introduction:LasersforApplications 109
4.2 The“Ideal”Laser 111
4.3 TowardSingle-ModeOperation 113
4.4 TowardHighCoherence 118
4.5 TheVeCSELintheStateoftheArt 121
4.6 HighlyCoherent,TunableVeCSELDesign 122
4.7 LimitsandSolutions 125
4.8 HighlyCoherent,TunableVeCSEL:MainCharacteristics 127
Contents vii
4.9 Ultrahigh-PuritySingle-modeOperation 129
4.10 SpatialCoherence 131
4.11 TimeDomainCoherenceandNoise 131
4.11.1 NoiseinPhotonics:Basics 131
4.11.2 IntensityNoiseofaVeCSEL 135
4.11.3 PhaseNoise,FrequencyNoise,andLinewidthofaVeCSEL 136
4.12 Conclusion 139
Acknowledgements 140
References 140
5 TerahertzMetasurfaceQuantumCascadeVECSELs 145
BenjaminS.WilliamsandLuyaoXu
5.1 Introduction 145
5.1.1 WaveguidesforTHzQC-Lasers 146
5.1.2 OverviewofMetasurfaceQC-VECSELConcept 148
5.2 MetasurfaceDesign 149
5.3 QC-VECSELModel 152
5.3.1 ConfinementFactor 156
5.3.2 MetasurfaceandCavityOptimization 157
5.4 THzQC-VECSELPerformance:Power,Efficiency,andBeam
Quality 159
5.4.1 EffectofMetasurfaceonSpectrum 160
5.4.2 EffectofOutputCoupler 161
5.4.3 FocusingMetasurfaceVECSEL 162
5.4.4 Intra-cryostatCavityQC-VECSEL 165
5.5 PolarizationControlinQC-VECSELs 166
5.6 Conclusion 169
References 170
6 DBR-freeOpticallyPumpedSemiconductorDiskLasers 175
AlexanderR.Albrecht,ZhouYang,andMansoorSheik-Bahae
6.1 Introduction 175
6.2 DBR-freeSemiconductorDiskLasers 176
6.2.1 OpportunitiesandAdvantages 177
6.2.2 ThermalAnalysis 178
6.2.3 LongitudinalModeStructureandBroadbandTunability 180
6.3 DeviceFabrication 182
6.4 DBR-freeSDLImplementation 185
6.4.1 HighPowerOperation 185
6.4.2 BroadTunability 187
6.4.3 Wafer-scaleProcessing 189
6.5 NovelConcepts 189
6.6 Conclusions 192
References 193
viii Contents
7 OpticallyPumpedRed-EmittingAlGaInP-VECSELsandthe
MECSELConcept 197
HermannKahle,MichaelJetter,andPeterMichler
7.1 Introduction 197
7.2 DirectRed-EmittingAlGaInP-VECSELsandSecond-Harmonic
Generation 199
7.2.1 GaInPQuantumWellsandtheAlGaInPMaterialSystem 199
7.2.2 GaInPQuantumWellVECSELs:AComparison 201
7.2.2.1 ArchitectureoftheSemiconductorStructures 202
7.2.2.2 ExperimentalSetup 203
7.2.2.3 CharacterizationResults 204
7.2.2.4 InternalEfficiency 204
7.2.3 PowerScalingviaQuantumWellandMulti-PassPumping 208
7.2.3.1 QuantumWellPumping 208
7.2.3.2 Multi-PassPumping 210
7.2.4 Second-HarmonicGenerationintotheUV-ASpectralRange 211
7.3 TheMembraneExternal-CavitySurface-EmittingLaser(MECSEL) 212
7.3.1 TheSemiconductorActiveRegionMembrane 213
7.3.2 MECSELSetup 215
7.3.3 MECSELCharacterization 216
7.3.3.1 OutputPowerMeasurements 216
7.3.3.2 BeamProfileandBeamQualityFactor 218
7.3.3.3 Spectra 218
7.4 Conclusions 221
References 221
PartII Mode-LockedVECSEL 229
8 RecentAdvancesinMode-LockedVertical-External-Cavity
Surface-EmittingLasers 231
AnneC.Tropper
8.1 Introduction 231
8.1.1 UltrafastLasers 232
8.1.2 UltrafastSemiconductorLasers;Diodes,VECSELs,andMIXSELs 233
8.2 UltrafastPulseFormationinaSurface-EmittingSemiconductor
Laser 235
8.2.1 Surface-EmittingGainChipDesign 235
8.2.2 GainFiltering 238
8.2.3 GainSaturationandRecovery 239
8.2.4 SaturableAbsorbersforML-VECSELsandMIXSELs 241
8.3 PerformanceofPassivelyMode-LockedSemiconductorLasers 244
8.3.1 PulseDuration 244
8.3.2 PulseRepetitionRate 246
8.3.3 Mode-LockedVECSELs:VisibletoMid-Infrared 248