Table Of Content

V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology vorgelegtvon MasterofScience AndreaMalignaggi VonderFakulta¨tIV ElektrotechnikundInformatik derTechnischenUniversita¨tBerlin zurErlangungdesakademischenGrades DoktorderIngenieurwissenschaften (Dr.-Ing.) genehmigteDissertation Promotionsausschuss: Vorsitzender: Prof. Dr.-Ing. FriedelGerfers Gutachter: Prof. Dr.-Ing. GeorgBo¨ck Gutachter: Prof. Dr.-Ing. PeterWeger Gutachter: Prof. Dr. sc. techn. RenatoNegra TagderwissenschaftlichenAussprache: 23. Juni2016 Berlin2016 ii Acknowledgements Foremost,IwouldliketoexpressmysinceregratitudetomyadvisorProf. Georg Bo¨ck for the continuous support of my Ph.D study and research, for his patience, motivation, enthusiasm, and immense knowledge. His guidancehelpedmeinallthetimeofresearchandwritingofthisthesis. I am deeply grateful to all my collegues at MWT. I was lucky to meet suchpeople,whoadvicedandassistedmeduringmywork. I wish to express my love and gratitude to my family, for the under- standingandtheendlesslovethroughthedurationofmystudies. No,nontihodimenticato. Grazie... iii iv Abstract This thesis is the result of more than three years research work at TU- Berlin. Severalradiofrequencyintegratedcircuitshavebeendesignedina commercialCMOStechnology,theTSMC90nm,andmeasuredon-wafer within the project WiONet. The author of this work has been focused on the design of the receiver part of a V-band high data-rate millimetre-wave transceiverandparticularlyontwoimportantbuildingblockssuchaslow- noiseamplifieranddown-conversionmixer. At first, the specifications of the receiver and its sub-blocks have been extracted applying to the planned transceiver system the requirements ob- tained by the IEEE 802.15.3c standard. Afterwards, a deep study of the passive and active components provided by the technology and a careful characterizationofthestructurestobeusedhavebeencarriedoutinorder to get familiar with the technology and optimize its use. The noise be- haviourofseveralamplifierandmixertopologieshasbeendeeplystudied, leading to the design and the characterization of several CMOS circuits. Finally, a four stage fully differential common source low noise ampli- fier and a fully differential Gilbert cell with resonating current bleeding networkhavebeenchosenforbeingpartoftheWiONetsystem. Bothcir- cuits showed state of the art performance in terms of gain, linearity, noise andpowerconsumption. Furthermore,theyfulfilthesystemrequirements withinthewholeV-band. v vi Zusammenfassung Diese Dissertation ist das Ergebnis von mehr als drei Jahren Forschung an der TU Berlin. Mehrere integrierte Hochfrequenz-Schaltungen wurden innerhalb des Projekts WiONet in einer kommerziellen CMOS Technolo- gie, TSMC 90nm, entwickelt und gemessen. Ziel des Projektes war die Entwicklung eines V-Band Transceivers im Millimiterwellenbereich fu¨r ku¨nftigeAnwendungenmitsehrhohenDatenu¨bertratungsraten.DerAutor dieserArbeithatsichaufdenEntwurfdesReceivers,insbesondereaufdie zwei wichtigen Elemente, rauscharmer Versta¨rker und Abwa¨rtsmischer, konzentriert. Die Spezifikationen des Receivers und dessen Untereinheiten wurden aus den geplanten Transceiver-Anforderungen entnommen, basierend auf dem IEEE 802.153c Standard. Anschließend wurden die von der Tech- nologie bereitgestellten passiven und aktiven Komponenten gru¨ndlich un- tersucht und eine gewissenhafte Charakterisierung der genutzten Struk- turen durchgefu¨hrt, um mit der Technologie vertraut zu werden und ih- ren Nutzen zu optimieren. Das Rauschverhalten mehrerer Versta¨rker- und Mischer-Architekturen, welche zu dem Design und der Charakterisierung verschiedener CMOS-Schaltungen fu¨hrte, wurde analysiert. Schlussend- lich wurde ein vier-stufiger volldifferenzieller, rauscharmer Versta¨rker in Source-Schaltung,sowieeinevolldifferenzielleGilbertZellemitresonan- temcurrentbleedingNetzwerkalsTeildesWiONetSystemsgewa¨hlt.Bei- de Schaltkreise entsprechen bezu¨glich Versta¨rkung, Linearita¨t, Rauschen und Leistungsaufnahme dem Stand der Technik. Außerdem genu¨gen sie denSystemanforderungenimkomplettenV-Band. vii viii Abbreviations TRx Transceiver IQ In-phaseandquadrature LNA Lownoiseamplifier CMOS Complementarymetal-oxide-semiconductor OOK On-offkeying IF Intermediatefrequency DC Directcurrent PLL Phasedlockedloop LO Localoscillator FTTH Fastfibretothehome FITH Fastfibreinthehome RF Radiofrequency IEEE InstituteofElectricalandElectronicsEngineers FSPL Freespaceloss PHY Physicallayer MAC Mediaaccesscontrol UM Usagemodel SC Singlecarrier HSI Highspeedinterface AV Audiovisual OFDM Orthogonalfrequencydivisionmultiplexing CMS Commonmodesignalling BPSK Binaryphaseshiftkeying QAM Quadratureamplitudemodulation QPSK Quadraturephaseshiftkeying DAMI dualalternatemarkinversion Tx Transmitter Rx Receiver BER Biterrorrate PAPR Peaktoaveragepowerratio F Noisefactor ix ABBREVIATIONS NF Noisefigure SNR Signaltonoiseratio IC Integratedcircuit BB Baseband DCM Downconversionmixer DEM Demodulator MOD Modulator UCM Upconversionmixer PA Poweramplifier SFD Staticfrequencydivider TSMC TaiwanSemiconductorManufacturingCompany f Transitionfrequency t f Maximumoscillationfrequency max UTM Ultrathickmetal GCTL Groundedcoplanartransmissionline DUT Deviceundertest GSG Ground-signal-ground MOS Metal-oxide-semiconductor BSIM BerkeleyShort-channelIGFETModel MSG Maximumstablegain EM Electro-magnetic SCTL Shieldedcoplanartransmissionline MIM Metal-insulator-metal CBM Capacitorbottommetal CTM Capacitortopmetal VCO Voltagecontrolledoscillator MAG Maximumavailablegain IP1dB Inputpoweratthe1dBcompressionpoint MOSFET Metal-oxide-semiconductorfield-effecttransistor P1dB 1dBcompressionpoint CMRR Commonmoderejectionratio P Directpower DC BW Bandwidth FOM Figureofmerit SSB Singlesideband DSB Doublesideband x

Description:
dieser Arbeit hat sich auf den Entwurf des Receivers, insbesondere auf die FTTH. Fast fibre to the home. FITH. Fast fibre in the home. RF. Radio frequency. IEEE. Institute of Electrical and Electronics Engineers. FSPL .. The main difference between the PHY modes is the modulation technique, be-.
ebook img

V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology PDF

132 Pages·2016·14.92 MB·English
by  Andrea Malignaggi
Save to my drive
Quick download
Download

Download V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology PDF Free - Full Version

by Andrea Malignaggi| 2016| 132 pages| 14.92| English

Download V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology by Andrea Malignaggi in PDF format completely FREE. No registration required, no payment needed. Get instant access to this valuable resource on PDFdrive.to!

Free Download PDF

About V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology

dieser Arbeit hat sich auf den Entwurf des Receivers, insbesondere auf die FTTH. Fast fibre to the home. FITH. Fast fibre in the home. RF. Radio frequency. IEEE. Institute of Electrical and Electronics Engineers. FSPL .. The main difference between the PHY modes is the modulation technique, be-.

Detailed Information

Author:Andrea Malignaggi
Publication Year:2016
Pages:132
Language:English
File Size:14.92
Format:PDF
Price:FREE
Download Free PDF

Safe & Secure Download - No registration required

Why Choose PDFdrive for Your Free V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology Download?

  • 100% Free: No hidden fees or subscriptions required for one book every day.
  • No Registration: Immediate access is available without creating accounts for one book every day.
  • Safe and Secure: Clean downloads without malware or viruses
  • Multiple Formats: PDF, MOBI, Mpub,... optimized for all devices
  • Educational Resource: Supporting knowledge sharing and learning

Free Books Similar to V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology

Frequently Asked Questions

Is it really free to download V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology PDF?

Yes, on https://PDFdrive.to you can download V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology by Andrea Malignaggi completely free. We don't require any payment, subscription, or registration to access this PDF file. For 3 books every day.

How can I read V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology on my mobile device?

After downloading V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology PDF, you can open it with any PDF reader app on your phone or tablet. We recommend using Adobe Acrobat Reader, Apple Books, or Google Play Books for the best reading experience.

Is this the full version of V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology?

Yes, this is the complete PDF version of V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology by Andrea Malignaggi. You will be able to read the entire content as in the printed version without missing any pages.

Is it legal to download V-Band Low Noise Amplifier and Mixer Design using 90 nm CMOS Technology PDF for free?

https://PDFdrive.to provides links to free educational resources available online. We do not store any files on our servers. Please be aware of copyright laws in your country before downloading.

The materials shared are intended for research, educational, and personal use in accordance with fair use principles.

We use cookies

We use cookies to ensure you get the best browsing experience on our website. By clicking "Accept Cookies", you agree that we can store cookies on your device in accordance with our Terms and Privacy.