Two Dimensional Transition Metal Dichalcogenides Synthesis, Properties, and Applications

360 Pages·2019·19.962 MB·English

by  Narayanasamy Sabari Arul, Vellalapalayam Devaraj Nithya

Narayanasamy Sabari Arul
Vellalapalayam Devaraj Nithya Editors
Two Dimensional
Transition Metal
Dichalcogenides
Synthesis, Properties, and Applications
Narayanasamy Sabari Arul
(cid:129)
Vellalapalayam Devaraj Nithya
Editors
Two Dimensional Transition
Metal Dichalcogenides
Synthesis, Properties, and Applications
123
Editors
Narayanasamy Sabari Arul Vellalapalayam Devaraj Nithya
Department ofChemical andBiochemical Gobichettipalayam, Tamil Nadu,India
Engineering
Dongguk University
Seoul, Korea (Republicof)
ISBN978-981-13-9044-9 ISBN978-981-13-9045-6 (eBook)
https://doi.org/10.1007/978-981-13-9045-6
©SpringerNatureSingaporePteLtd.2019
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Preface
The great accomplishment of graphene has been pursued by an equally inspiring
surgefortheexpansionofother2DmaterialsisolatedfromitsoriginalvanderWaals
crystal that can form atomic sheets with extraordinary properties. Among them,
transitionmetaldichalcogenides(TMDs)arelayeredmaterialswhicharecomposed
of type MX2 of group VIA, where M is a transition metal atoms (M=Mo, W and
X=S, Se, Te), and are emerging next-generation semiconductor materials.
Depending on the arrangement of the atoms, the structures of 2D TMDs can be
categorizedastrigonalprismatic(hexagonal,H),octahedral(tetragonal,T),andtheir
distorted phase (T0). Depending on their chemical compositions and structural
configurations, atomically thin 2D materials can be categorized as metallic,
semimetallic, semiconducting, insulating, or superconducting. Two-dimensional
TMDs exhibit unique electrical and optical properties that evolve from the quan-
tum confinement and surface effects that arise during the transition of an indirect
bandgap to a direct bandgap when bulk materials are scaled down to monolayers.
The tunable bandgap in TMDs is accompanied by strong photoluminescence
(PL) and large exciton binding energy, making them a potential candidate for a
variety of optoelectronic devices, including solar cells, photodetectors,
light-emittingdiodes,andphototransistors.Forinstance,uniquepropertiesofMoS
2
including direct bandgap (*1.8 eV), good mobility (*700 cm2 V−1s−1), high
currenton/offratioof*107–108,largeopticalabsorption(*107m−1inthevisible
range),andagiantPLarisingfromthedirectbandgap(1.8eV)inmonolayerhave
been studied widely for variouselectronics and optoelectronics applications.
Thisbooksolelyfocusesonthe“transitionmetaldichalcogenides(TMDs)”and
deals with the “synthesis, properties, and application” aspects of the materials.
Moreover,thecurrentchallengesandfutureperspectivesonthedevelopmentof2D
TMDsarecomprehensivelydiscussedinthisbookwiththehopethatthebookwill
v
vi Preface
provide a deep insight into the state of the art of transition metal dichalcogenides.
WewouldliketothanktheeditorialassistanceandpatienceaswellasSpringerfor
the invaluable help in the organization of the editing process.
Seoul, Korea (Republic of) Narayanasamy Sabari Arul
Gobichettipalayam, India Vellalapalayam Devaraj Nithya
Contents
1 Two-Dimensional Transition Metal Dichalcogenides:
An Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Tao Liang, Yu Cai, Hongzheng Chen and Mingsheng Xu
2 Preparation Methods of Transition Metal Dichalcogenides. . . . . . . 29
Mukulika Dinara and Chandra Sekhar Rout
3 Properties of Transition Metal Dichalcogenides . . . . . . . . . . . . . . . 69
James T. Gibbon and Vinod R. Dhanak
4 Transition Metal Dichalcogenides in Photocatalysts . . . . . . . . . . . . 107
Ting Huang, Min Zhang, Hongfei Yin and Xiaoheng Liu
5 Simulation of Transition Metal Dichalcogenides . . . . . . . . . . . . . . . 135
Mohammad Rezwan Habib, Wenchao Chen, Wen-Yan Yin,
Huanxing Su and Mingsheng Xu
6 Transition Metal Dichalcogenides for Energy Storage
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
Liangxu Lin, Shaowei Zhang and Dan A. Allwood
7 2D Transition Metal Dichalcogenides for Solution-Processed
Organic and Perovskite Solar Cells . . . . . . . . . . . . . . . . . . . . . . . . 203
G.Kakavelakis,L.Gouda,Y.Tischler,I.KaliakatsosandK.Petridis
8 Transition Metal Dichalcogenides for Biomedical Applications. . . . 241
Linji Gong and Zhanjun Gu
9 Transition Metal Dichalcogenides in Sensors . . . . . . . . . . . . . . . . . 293
Rajeswari Ponnusamy and Chandra Sekhar Rout
10 Electronic Devices Based on Transition Metal Dichalcogenides . . . 331
Jiaxu Yan and Ze Xiang Shen
vii
Editors and Contibutors
About the Editors
Narayanasamy Sabari Arul received his Ph.D. in Nanoscience and Technology
fromBharathiarUniversity,TamilNadu,India,followingwhichhehasworkedasa
visiting Ph.D. research fellow at Lunghwa University of Science and Technology,
Taiwan and Brain-Korea (BK21) Postdoctoral Fellow at Hanyang University,
Seoul, South Korea and Assistant Professor in Dongguk University-Seoul, South
Korea. His research interests include synthesis of metal oxide nanocomposites and
thin films, nanomaterials, quantum dots, perovskites and two-dimensional
dichalcogenides for photocatalysts, photovoltaic cells, memory devices, superca-
pacitors, and electrochemical sensors. He has published more than 45 SCI journal
articlesand20papersinproceedingsofinternationalconferencesandholdsoneUS
andKoreanPatent.Dr.ArulalsoservesasarefereeforvariousjournalsinSpringer,
Elsevier, Royal Society of Chemistry and Institute of Physics.
Vellalapalayam Devaraj Nithya received her Ph.D. in Physics from Bharathiar
University, Tamil Nadu, India, and had completed her Masters from same
University. Her research interests mainly focus on metal oxide nanostructures and
their applications for energy storage devices with special emphasis on superca-
pacitors and Li-ion batteries. She has been the recipient of many awards and
fellowships including the INSPIRE fellowship by the Department of Science and
Technology, Government of India. She has presented her research work in many
seminars and workshops and has published over 20 research papers in journals of
international repute.
ix
x EditorsandContibutors
Contributors
Dan A. Allwood The University of Sheffield, Sheffield, UK
Yu Cai Department of Chemical and Biological Engineering, University of
Colorado Boulder, Boulder, CO, USA
Hongzheng Chen Department of Polymer Science and Engineering, Zhejiang
University, Hangzhou, People’s Republic of China
Wenchao Chen College of Information Science and Electronic Engineering,
Zhejiang University, Hangzhou, People’s Republic of China
VinodR.Dhanak DepartmentofPhysics,UniversityofLiverpool,Liverpool,UK
Mukulika Dinara School of Basic Sciences, Indian Institute of Technology,
Bhubaneswar, Odisha, India
JamesT.Gibbon DepartmentofPhysics,UniversityofLiverpool,Liverpool,UK
Linji Gong CAS Key Laboratory for Biomedical Effects of Nanomaterials and
Nanosafety, Institute of High Energy Physics, Chinese Academy of Sciences,
Beijing, People’s Republic of China;
University of Chinese Academy of Sciences, Beijing, People’s Republic of China
L.Gouda DepartmentofChemistryandtheInstituteofNanotechnology,Bar-Ilan
University, Ramat-Gan, Israel
Zhanjun Gu CAS Key Laboratory for Biomedical Effects of Nanomaterials and
Nanosafety, Institute of High Energy Physics, Chinese Academy of Sciences,
Beijing, People’s Republic of China;
University of Chinese Academy of Sciences, Beijing, People’s Republic of China
Mohammad Rezwan Habib State Key Laboratory of Silicon Materials, College
of Information Science and Electronic Engineering, Zhejiang University,
Hangzhou, People’s Republic of China
Ting Huang Key Laboratory for Soft Chemistry and Functional Materials of
Ministry of Education, School of Chemical Engineering, Nanjing University of
Science and Technology, Nanjing, China
G. Kakavelakis Department of Materials Science and Technology, University of
Crete, Gallos, Greece
I. Kaliakatsos Department of Electronic Engineering, Hellenic Mediterranean
University, Crete, Greece
Tao Liang State Key Laboratory of Silicon Materials, Department of Polymer
Science and Engineering, College of Information Science and Electronic
Engineering, Zhejiang University, Hangzhou, People’s Republic of China
EditorsandContibutors xi
Liangxu Lin University of Wollongong, Wollongong, AU, Australia;
Wuhan University of Science and Technology, Wuhan, China
Xiaoheng Liu Key Laboratory for Soft Chemistry and Functional Materials of
Ministry of Education, School of Chemical Engineering, Nanjing University of
Science and Technology, Nanjing, China
K. Petridis Department of Electronic Engineering, Hellenic Mediterranean
University, Crete, Greece
Rajeswari Ponnusamy Centre for Nano and Material Sciences, Jain University,
Ramanagaram, Bangalore, India
Chandra Sekhar Rout Centre for Nano and Material Sciences, Jain University,
Ramanagaram, Bangalore, India
Ze Xiang Shen Division of Physics and Applied Physics, School of Physical and
Mathematical Sciences (SPMS), Nanyang Technological University, Singapore,
Singapore
HuanxingSu StateKeyLaboratoryofQualityResearchinChineseMedicineand
InstituteofChineseMedicalSciences,UniversityofMacau,MacauSAR,People’s
Republic of China
Y. Tischler Department of Chemistry and the Institute of Nanotechnology,
Bar-Ilan University, Ramat-Gan, Israel
MingshengXu StateKeyLaboratoryofSiliconMaterials,CollegeofInformation
Science and Electronic Engineering, Zhejiang University, Hangzhou, People’s
Republic of China
Jiaxu Yan Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National
Synergistic Innovation Center for Advanced Materials (SICAM), Institute of
Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), Nanjing,
People’s Republic of China;
Division of Physics and Applied Physics, School of Physical and Mathematical
Sciences (SPMS), Nanyang Technological University, Singapore, Singapore
Hongfei Yin Key Laboratory for Soft Chemistry and Functional Materials of
Ministry of Education, School of Chemical Engineering, Nanjing University of
Science and Technology, Nanjing, China
Wen-Yan Yin College of Information Science and Electronic Engineering,
Zhejiang University, Hangzhou, People’s Republic of China
Min Zhang Key Laboratory for Soft Chemistry and Functional Materials of
Ministry of Education, School of Chemical Engineering, Nanjing University of
Science and Technology, Nanjing, China
Shaowei Zhang University of Exeter, Exeter, UK
Chapter 1
Two-Dimensional Transition Metal
Dichalcogenides: An Overview
TaoLiang,YuCai,HongzhengChenandMingshengXu
Abstract Two-dimensionalmaterialsattractenormousresearchattentionsowingto
the fascinating properties and great potential applications in electronics, optoelec-
tronics,spintronics,energyconversion,andstorage.Amongthem,two-dimensional
transitional metal dichalcogenides exhibit exceptional properties such as tunable
bandgaps,phasetransition,andsuperconductivity.Assuch,two-dimensionaltransi-
tionalmetaldichalcogenideshavebeenextensivelystudiedfocusingontheproperty,
synthesis,modification,anddevices.Furthermore,thecombinationofdifferenttwo-
dimensionaltransitionalmetaldichalcogenidesbringsinversatilefunctionalitiesand
theproof-of-conceptelectricaldevicessuchastunnelingfield-effecttransistors,light-
emittingdiodesandphotovoltaicshavebeendemonstratedintheplanarorvertical
heterostructures.Thusinthischapter,wesummarizethebasicknowledgeandprevi-
ousresearchresultsaboutthetwo-dimensionaltransitionalmetaldichalcogenides,
emphasizingtheatomstructure,bandstructure,andelectricalapplications.
1.1 Introduction
Since graphene was first isolated from highly oriented pyrolytic graphite (HOPG)
in 2004 [1], the excellent properties of graphene are motivating rapidly growing
researchenthusiasmsinthelayeredmaterials,especiallywhentheyarethinneddown
totheatomicthickness.Forlayeredtransitionmetaldichalcogenides(TMDs),two-
dimensional(2D,referringtofew-layerandmonolayerherein)onesexhibitdistinct
B
T.Liang·M.Xu( )
StateKeyLaboratoryofSiliconMaterials,CollegeofInformationScienceandElectronic
Engineering,ZhejiangUniversity,Hangzhou310027,People’sRepublicofChina
e-mail:[email protected]
T.Liang·H.Chen
DepartmentofPolymerScienceandEngineering,ZhejiangUniversity,Hangzhou310027,
People’sRepublicofChina
Y.Cai
DepartmentofChemicalandBiologicalEngineering,UniversityofColoradoBoulder,Boulder,
CO80309-0596,USA
©SpringerNatureSingaporePteLtd.2019 1
N.S.ArulandV.D.Nithya(eds.),TwoDimensionalTransitionMetalDichalcogenides,
https://doi.org/10.1007/978-981-13-9045-6_1