Table Of ContentELSEVIER Thin Solid Films 367 (2000) 306-307
www.elsevier.com/locate/tsf
Author Index of Volume 367
Adamowicz, B., 180 Gornik, E., 267 Kubica, J.M., 290 Orsila, S., 260
Adamowski, J., 93, 97 Griin, M., 68 Kurabayashi, T., 13 Osten, H.J., 101
Alferov, Zh.I., 40, 235 Griesche, J., 159 Kurtz, E., 68
Anisimov, O.V., 199 Grundmann, M., 235 Kuwano, S., 149 Podor, B., 89
Aseev, A.L., 142 Grzegory, I., 281 Kyrychenko, F., 210, Parker, E.H.C., 176, 250
Guillot, C., 193 Parry, C.P., 176
Bacchin, G., 6 Gusev, S.A., 171 Larsen, A.N., 120 Pchelyakov, O.P., 75
Baczewski, L.T., 189 Guziewicz, E., 193 Latyshev, A.V., 142 Perez-Rodriguez, A., 176
Bak-Misiuk, J., 165, 232 Ledentsov, N.N., 40, Pessa, M., 260
Bakshi, P., 295 Haapamaa, J., 260 Lesiak-Orlowska, B., 193 Piatkowski, P., 134
Banshchikov, A.G., 199 Hansen, J.L., 120 Liliental-Weber, Z., 277 Ploner, G., 267
Barcz, A., 220 Hansen, L., 85 Litvinov, D., 40, 68 Ploog, K.H., 32
Barrett, H., 193 Hasegawa, H., 58, 180 Lobanov, D.N., 171 Pohl, U.W., 40
Bassas, J.M., 176 Heinrichsdorff, F., 235 Lundin, W.V., 40 Porowski, S., 281
Bednarek, S., 93, 97 Heitz, R., 40 Postnikov, V.V., 171
Bensing, F., 85 Herman, M.A., | Mackowski, S., 210, 223 Pridachin, D.N., 203
Bimberg, D., 40, 235 Hingerl, K., 216 Magnea, N., 48 Przestawski, T., 232
Bolkhovityanov, Y.B., 75 Hoffmann, A., 40 Maksymowicz, A.Z., 28
Bonanni, A., 216 Hong, S.K., 68 Malarz, K., 28 Qiu, X.G., 149
Borkovskaya, L.V., 184 Horvath, Z.J., 89 Martrou, D., 48
Bugajski, M., 290 Maximov, M.V., 235 Ratajczak, J., 290
Burdina, L.D., 203 Ilver, L., 165 McClelland, J.J., 25 Rauch, C., 267
Melanen, P., 260 Reginski, K., 232, 290
Celotta, R.J., 25 Jakiela, R., 220 Meyer, C., 189 Rodt, S., 40
Chtcherbatchev, K.D., 176 Janik, E Mironov, O.A., 176 Romano-Rodriguez, A., 176
Cooke, G.A., 176 Johnson, R.L., 193 Moisseeva, M.M., 199 Rosenauer, A., 40
Czuba, P., 134 Joyce, B.A., 3 Moldavskaya, L.D., 171 Ruvimov, S., 277
Morante, J.R., 176
Diduszko, R., 168 Kalinowski, R., 189 Mosca, R., 89 Saarinen, M., 260
Dolgov, I.V., 171 Kaniewski, J., 232 Mroz, A., 126 Sadof’ev, Y.G., 184
Domagala, J.Z., 165 Kanski, J., 165 Mroz, S., 126 Sadowski, J., 165, 168, 193
Domuchowski, V., 168 Karczewski, G., 210, 220 Muszalski, J., 290, 299 Sakharov, A.V., 40
Dowsett, M.G., 176 Katcki, J., 290 Sakurai, T., 149
Dozsa, L., 89 Kempa, K., 295 Nabetani, Y., 277 Sapko, S.Y., 184
Drozdov, Y.N., 171 Klad’ko, V.P., 184 Nadolny, A.J., 168 Sasaki, A., 277
Dvurechenskii, A.V., 75 Klingshirn, C., 68 Nasimov, D.A., 142 Savenko, V.N., 142
Kolesnik, S., 165 Nemesics, A., 89, 302 Savolainen, P., 260
Engelhardt, R., 40 Kolodziej, J., 134 Nikiforov, A.I., 75 Schmidt, M., 68
Kop’ev, P.S., 235 Nishinaga, T., 6 Segawa, Y., 149
Filatov, D.O., 171 Korecki, P., 134 Nishizawa, J.-I., 13 Semenova, G.N., 184
Franchi, S., 89 Korsunskaya, N.E., 184 Notzel, R., 32 Semtsiv, M.P., 184
Frigeri, P., 89 Kossut, J., 210, 223 Novikov, A.V., 171 Seweryn, A., 220
Fulgoni, D.J.F., 176 Kovsh, A.R., 235 Shechovtsov, L.V., 184
Kowalski, B.J., 193 Ochalski, T., 290 Shen, J., 68
Gaiduk, P.I., 120 Krasil’ nik, Z.F., 171 Ohno, T., 149 Shernyakov, Y.M., 235
Gerthsen, D., 40, 68 Krestnikov, I.L., 40 Oka, T., 68 Sidorov, Y.G., 203
Gombia, E., 89 Krupin, A.V., 199 Orlowski, B.A., 193 Sipila, P., 260
PII: $0040-6090(00)00961-5
ELSEVIER Thin Solid Films 367 (2000) 306-307
www.elsevier.com/locate/tsf
Author Index of Volume 367
Adamowicz, B., 180 Gornik, E., 267 Kubica, J.M., 290 Orsila, S., 260
Adamowski, J., 93, 97 Griin, M., 68 Kurabayashi, T., 13 Osten, H.J., 101
Alferov, Zh.I., 40, 235 Griesche, J., 159 Kurtz, E., 68
Anisimov, O.V., 199 Grundmann, M., 235 Kuwano, S., 149 Podor, B., 89
Aseev, A.L., 142 Grzegory, I., 281 Kyrychenko, F., 210, Parker, E.H.C., 176, 250
Guillot, C., 193 Parry, C.P., 176
Bacchin, G., 6 Gusev, S.A., 171 Larsen, A.N., 120 Pchelyakov, O.P., 75
Baczewski, L.T., 189 Guziewicz, E., 193 Latyshev, A.V., 142 Perez-Rodriguez, A., 176
Bak-Misiuk, J., 165, 232 Ledentsov, N.N., 40, Pessa, M., 260
Bakshi, P., 295 Haapamaa, J., 260 Lesiak-Orlowska, B., 193 Piatkowski, P., 134
Banshchikov, A.G., 199 Hansen, J.L., 120 Liliental-Weber, Z., 277 Ploner, G., 267
Barcz, A., 220 Hansen, L., 85 Litvinov, D., 40, 68 Ploog, K.H., 32
Barrett, H., 193 Hasegawa, H., 58, 180 Lobanov, D.N., 171 Pohl, U.W., 40
Bassas, J.M., 176 Heinrichsdorff, F., 235 Lundin, W.V., 40 Porowski, S., 281
Bednarek, S., 93, 97 Heitz, R., 40 Postnikov, V.V., 171
Bensing, F., 85 Herman, M.A., | Mackowski, S., 210, 223 Pridachin, D.N., 203
Bimberg, D., 40, 235 Hingerl, K., 216 Magnea, N., 48 Przestawski, T., 232
Bolkhovityanov, Y.B., 75 Hoffmann, A., 40 Maksymowicz, A.Z., 28
Bonanni, A., 216 Hong, S.K., 68 Malarz, K., 28 Qiu, X.G., 149
Borkovskaya, L.V., 184 Horvath, Z.J., 89 Martrou, D., 48
Bugajski, M., 290 Maximov, M.V., 235 Ratajczak, J., 290
Burdina, L.D., 203 Ilver, L., 165 McClelland, J.J., 25 Rauch, C., 267
Melanen, P., 260 Reginski, K., 232, 290
Celotta, R.J., 25 Jakiela, R., 220 Meyer, C., 189 Rodt, S., 40
Chtcherbatchev, K.D., 176 Janik, E Mironov, O.A., 176 Romano-Rodriguez, A., 176
Cooke, G.A., 176 Johnson, R.L., 193 Moisseeva, M.M., 199 Rosenauer, A., 40
Czuba, P., 134 Joyce, B.A., 3 Moldavskaya, L.D., 171 Ruvimov, S., 277
Morante, J.R., 176
Diduszko, R., 168 Kalinowski, R., 189 Mosca, R., 89 Saarinen, M., 260
Dolgov, I.V., 171 Kaniewski, J., 232 Mroz, A., 126 Sadof’ev, Y.G., 184
Domagala, J.Z., 165 Kanski, J., 165 Mroz, S., 126 Sadowski, J., 165, 168, 193
Domuchowski, V., 168 Karczewski, G., 210, 220 Muszalski, J., 290, 299 Sakharov, A.V., 40
Dowsett, M.G., 176 Katcki, J., 290 Sakurai, T., 149
Dozsa, L., 89 Kempa, K., 295 Nabetani, Y., 277 Sapko, S.Y., 184
Drozdov, Y.N., 171 Klad’ko, V.P., 184 Nadolny, A.J., 168 Sasaki, A., 277
Dvurechenskii, A.V., 75 Klingshirn, C., 68 Nasimov, D.A., 142 Savenko, V.N., 142
Kolesnik, S., 165 Nemesics, A., 89, 302 Savolainen, P., 260
Engelhardt, R., 40 Kolodziej, J., 134 Nikiforov, A.I., 75 Schmidt, M., 68
Kop’ev, P.S., 235 Nishinaga, T., 6 Segawa, Y., 149
Filatov, D.O., 171 Korecki, P., 134 Nishizawa, J.-I., 13 Semenova, G.N., 184
Franchi, S., 89 Korsunskaya, N.E., 184 Notzel, R., 32 Semtsiv, M.P., 184
Frigeri, P., 89 Kossut, J., 210, 223 Novikov, A.V., 171 Seweryn, A., 220
Fulgoni, D.J.F., 176 Kovsh, A.R., 235 Shechovtsov, L.V., 184
Kowalski, B.J., 193 Ochalski, T., 290 Shen, J., 68
Gaiduk, P.I., 120 Krasil’ nik, Z.F., 171 Ohno, T., 149 Shernyakov, Y.M., 235
Gerthsen, D., 40, 68 Krestnikov, I.L., 40 Oka, T., 68 Sidorov, Y.G., 203
Gombia, E., 89 Krupin, A.V., 199 Orlowski, B.A., 193 Sipila, P., 260
PII: $0040-6090(00)00961-5
Author index
Sitter, H., 216 Toivonen, M., 260 Vilokkinen, V., 260 Xue, Q.K., 149
Slupinski, T., 227 Tsatsul’nikov, A.F., 235 Voigtlander, B., 75 Xue, Q.Z., 149
Sokolov, N.S., 112, Tsong, I.S.T., 149 Volovik, B.V., 235
Stifter, D., 216 Vostokov, N.V., 171 Yakimov, A.L., 75
Strafburg, M., 40 Ulin, V.P., 199 Yakovlev, N.L., 199
Strasser, G., 267 Usikov, A.S., 40 Waag, A., 85 Yakushev, M.V., 203
Suturin, S.M., 112 Ustinov, V.M., 235 Washburn, J., 277 Yao, T., 68
Swiatek, K., 165 Uusimaa, P., 260 Wawro, A., 189
Zbroszczyk, M., 290
Szafran, B., 93, 97 Weber, E.R., 277
Zhukov, A.E., 235
Szamota-Sadowska, K., 193 Van Tuyen, V., 89 Whall, T.E., 250
Zielinska-Rohozinska, E., 227
Szymonski, M., 134 Varavin, V.S., 203 Wojtowicz, T., 210, 220
Venger, E.F., 184 Wolkenberg, A., 232
sella
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ELSEVIER Thin Solid Films 367 (2000) 308-312
www.elsevier.com/locate/tsf
Subject Index of Volume 367
AlGaAs photoluminescence Current—voltage characteristics
Analysis of photoluminescence efficiency and surface recom- MBE-grown gate-controlled quantum-dot nanostructure and its
bination velocity of MBE-grown AlGaAs layers, 180 current—voltage characteristics, 97
Atom optics
Laser-focused atomic deposition — nanofabrication via atom
Device with side-gated quantum wires
optics, 25
Transport spectroscopy of quantum wires and superlattices, 267
Atomic force microscopy
Diffusion processes in cation sublattice
MBE-growth peculiarities of fluoride (CdF,—-CaF,) thin film
Cation diffusion in MBE-grown CdTe layers, 220
structures, 112
Diluted magnetic semiconductors
The elastic strain and composition of self-assembled GeSi
Reflectance difference spectroscopy: a powerful tool for in situ
islands on Si(001), 171
investigations of II-VI compounds with Mn, 216
Lateral and depth inhomogeneities in Zn-based heterostructures
Directional Auger electron spectroscopy
grown on GaAs by MBE, 184
Auger electron spectroscopy in the investigation of ultrathin
Manganese fluoride epitaxial growth on Si(111), 199
films in molecular beam epitaxy, 126
Atomic layer epitaxy
Dopant diffusion in Si,_,-,Ge,C,
Equilibrium shape of steps and islands on polar CdTe(001)
MBE growth and properties of supersaturated, carbon-contain-
surface: application to the preparation of self organized tem-
ing silicon/germanium alloys on Si(001), 101
plates for growth of nanostructures, 48
Doping of GaN crystals
GaN substrates for molecular beam epitaxy growth of homo-
Capacitance spectroscopy epitaxial structures, 281
Single-electron charging of self assembled quantum dots, 93
Carbon-containing Si/Ge alloy
Electron holography
MBE growth and properties of supersaturated, carbon-contain- Structure and electronic properties of ionic nano-layers MBE-
ing silicon/germanium alloys on Si(001), 101 grown on III—V semiconductors, 134
CdTe/ZnTe multiple quantum wells Electron transport spectroscopy
Influence of MBE growth conditions on optical properties of Transport spectroscopy of quantum wires and superlattices, 267
CdTe/ZnTe quantum structures, 210 Epitaxial films
Characterization of molecular beam epitaxy grown films Manganese fluoride epitaxial growth on Si(111), 199
Auger electron spectroscopy in the investigation of ultrathin
films in molecular beam epitaxy, 126 Fermi level pinning
Charge carriers transport in mechanically relaxed epilayers MBE growth and applications of silicon interface control
Growth and transport properties of relaxed epilayers of InAs on layers, 58
GaAs, 232 First-principles total-energy calculations
CMOS technology Imaging wurtzite GaN surfaces by molecular beam epitaxy-
SiGe — heterostructures for CMOS technology, 250 scanning tunneling microscopy, 149
Computer simulations
A simple solid-on-solid model of epitaxial thin films growth: GaAs tera-hertz devices grown by molecular layer epitaxy
inhomogeneous multilayered sandwiches, 28 Molecular layer epitaxy, 13
Computer simulations of the transport and electromagnetic GaAs:Te solid solution
properties of MBE-grown quantum structures, 295 Local order of Te impurity atoms and free electron concentra-
Critical thickness of the epilayer tion in heavily doped GaAs:Te, 227
Correlation between the critical layer thickness and the decay- Gadolinium epitaxial thin films
time constant of RHEED oscillations in strained Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra-
In,Ga,_,As/GaAs structures, 302 thin films, 189
Crystallization of GaN under high N, pressure Germanium
GaN substrates for molecular beam epitaxy growth of homo- Molecular beam epitaxy of silicon—-germanium nanostructures,
epitaxial structures, 281 75
PII: S0040-6090(00)00962-7
Subject index
Gold adsorption on Si(111) surface Laser-focused atom deposition
UHV-REM study of gold adsorption on the Si(111) surface, Laser-focused atomic deposition - nanofabrication via atom
142 optics, 25
Layer-by-layer growth of ultrathin films
Hall effect measurements Auger electron spectroscopy in the investigation of ultrathin
Growth and transport properties of relaxed epilayers of InAs on films in molecular beam epitaxy, 126
GaAs, 232 Local order of impurities
Heavily doped semiconductors Local order of Te impurity atoms and free electron concentra-
Local order of Te impurity atoms and free electron concentra- tion in heavily doped GaAs:Te, 227
tion in heavily doped GaAs:Te, 227 Low energy electron diffraction
Heteroepitaxy Structure and electronic properties of ionic nano-layers MBE-
Molecular beam epitaxy of silicon—-germanium nanostructures, grown on III-V semiconductors, 134
75 Low-temperature atomic layer epitaxy
Heteroepitaxy by molecular beam epitaxy Formation and properties of self-organized II-VI quantum
MBE growth and applications of silicon interface control islands, 68
layers, 58
Heteroepitaxy of II-VI compounds
The heteroepitaxy of II-VI compounds on the non-isovalent Magnetic phase transitions
substrates (ZnTe/Si), 203 Structural properties of MBE grown GaMnAs layers, 165
High resolution X-ray diffraction Magnetic structures
Influence of Mn content in MBE-grown Sn,_,Mn,Te layers on A simple solid-on-solid model of epitaxial thin films growth:
their structural properties studied by X-ray diffraction, 168 inhomogeneous multilayered sandwiches, 28
High-resolution X-ray diffractometry Magnetization in thin films
Growth and transport properties of relaxed epilayers of InAs on Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra-
GaAs, 232 thin films, 189
Historical perspective of molecular beam epitaxy Magneto-optical properties of quantum wells
Fundamental growth processes in the molecular beam epitaxy Magneto-optical properties of CdTe quantum wells with tern-
of III-V compounds — an historical perspective, 3 ary MgMnTe and quaternary CdMnMgTe barriers, 223
Homoepitaxy and heteroepitaxy by molecular beam epitaxy Material contrast in reflection high-energy electron diffraction pat-
Fundamental growth processes in the molecular beam epitaxy terns
of III-V compounds ~ an historical perspective, 3 Investigations on the growth mechanism of wide-gap II-VI
Hut-clusters and dome-islands semiconductors by means of reflection high energy electron
The elastic strain and composition of self-assembled GeSi diffraction, 159
islands on Si(001), 171 Mechanisms of molecular beam epitaxy growth of Si, ,Ge, alloys
Strain-relaxed SiGe/Si heteroepitaxial structures of low thread-
III-V semiconductor compounds ing-dislocation density, 120
Structure and electronic properties of ionic nano-layers MBE- Metallic thin films
grown on III-V semiconductors, 134 Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra-
III-V semiconductors thin films, 189
Uniform III-V semiconductor quantum wire and quantum dot MnF, growth by molecular beam epitaxy on CaF,/Si(111) sub-
arrays by natural self-faceting on patterned substrates, 32 strates
InAs and Si quantum dots Manganese fluoride epitaxial growth on Si(111), 199
InAs quantum dots embedded in silicon, 85 Molecular beam epitaxy
Injection lasers Uniform III-V semiconductor quantum wire and quantum dot
Quantum dot lasers: breakthrough in optoelectronics, 235 arrays by natural self-faceting on patterned substrates, 32
Intensity oscillations of the reflection high energy electron diffrac- Molecular beam epitaxy of silicon—germanium nanostructures,
tion specular beam 75
Correlation between the critical layer thickness and the decay- InAs quantum dots embedded in silicon, 85
time constant of RHEED oscillations in strained Structure and electronic properties of ionic nano-layers MBE-
In,Ga,_,As/GaAs structures, 302 grown on III-V semiconductors, 134
Interfaces Lateral and depth inhomogeneities in Zn-based heterostructures
A simple solid-on-solid model of epitaxial thin films growth: grown on GaAs by MBE, 184
inhomogeneous multilayered sandwiches, 28 The heteroepitaxy of II-VI compounds on the non-isovalent
Interface control layers substrates (ZnTe/Si), 203
MBE growth and applications of silicon interface control Pyrometric interferometry during MBE growth of laser hetero-
layers, 58 structures, 299
Intra-ion transitions Molecular beam epitaxial growth
Reflectance difference spectroscopy: a powerful tool for in situ MBE growth and properties of supersaturated, carbon-contain-
investigations of II-VI compounds with Mn, 216 ing silicon/germanium alloys on Si(001), 101
310 Subject index
Molecular beam epitaxial growth interruption effects Molecular beam epitaxy of GaAs, ALGaAs, ALAs
Influence of MBE growth conditions on optical properties of Selective area MBE of GaAs, A1As and their alloys by periodic
CdTe/ZnTe quantum structures, 210 supply epitaxy, 6
Molecular beam epitaxy growth mechanisms of thin film structures Molecular beam technology growth of Bragg reflectors
MBE-growth peculiarities of fluoride (CdF,—CaF,) thin film MBE growth of planar microcavities with distributed Bragg
structures, 112 reflectors, 290
Molecular beam epitaxial growth modes Molecular layer epitaxy of GaAs, InP and Si
Transition thickness of semiconductor heteroepitaxy, 277 Molecular layer epitaxy, 13
Molecular beam epitaxy growth of CdTe
Cation diffusion in MBE-grown CdTe layers, 220
Nanostructures
Molecular beam epitaxial growth of CdTe quantum wells
Reflectance difference spectroscopy: a powerful tool for in situ
Magneto-optical properties of CdTe quantum wells with tern-
investigations of II-VI compounds with Mn, 216
ary MgMnTe and quaternary CdMnMgTe barriers, 223
Nanotechnology
Molecular beam epitaxy growth of CdYbTe
Laser-focused atomic deposition — nanofabrication via atom
Electronic structure of MBE grown CdYbTe: photoemission
studies, 193 optics, 25
Equilibrium shape of steps and islands on polar CdTe(001)
Molecular beam epitaxy growth of embedded heterostructures
surface: application to the preparation of self organized tem-
Growth and electrical characteristics of InAs/GaAs quantum
plates for growth of nanostructures, 48
well and quantum dot structures, 89
Molecular beam epitaxy growth of GalnP/AlGalInP and GalnP/
GaAs heterostructures Optoelectronics
Growth of resonant cavity quantum well light emitting diodes InAs quantum dots embedded in silicon, 85
and two-junction solar cells by solid source molecular beam
epitaxy, 260 Passivation by interface control layer
Molecular beam epitaxy growth of GaMnAs Analysis of photoluminescence efficiency and surface recom-
Structural properties of MBE grown GaMnAs layers, 165 bination velocity of MBE-grown AlGaAs layers, 180
Molecular beam epitaxial growth of GeSi nanoislands Patterned growth
The elastic strain and composition of self-assembled GeSi Uniform III-V semiconductor quantum wire and quantum dot
islands on Si(001), 171 arrays by natural self-faceting on patterned substrates, 32
Molecular beam epitaxial growth of homoepitaxial GaN layers Periodic supply epitaxy
GaN substrates for molecular beam epitaxy growth of homo- Selective area MBE of GaAs, AlAs and their alloys by periodic
epitaxial structures, 281
supply epitaxy, 6
Molecular beam epitaxial growth of II-VI compounds Perpendicular magnetic anisotropy
Investigations on the growth mechanism of wide-gap II-VI
Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra-
semiconductors by means of reflection high energy electron
thin films, 189
diffraction, 159
Photoluminescence
Molecular beam epitaxial growth of InAs on GaAs
Influence of MBE growth conditions on optical properties of
Growth and transport properties of relaxed epilayers of InAs on
CdTe/ZnTe quantum structures, 210
GaAs, 232
Planar microcavities
Molecular beam epitaxial growth of SnMnTe
MBE growth of planar microcavities with distributed Bragg
Influence of Mn content in MBE-grown Sn,_,Mn,Te layers on
reflectors, 290
their structural properties studied by X-ray diffraction, 168
Pseudomorphic Si/SiGe/Si heterostructures
Molecular beam epitaxial growth of strained heterostructures
SiGe — heterostructures for CMOS technology, 250
Correlation between the critical layer thickness and the decay-
Pyrometric interferometry
time constant of RHEED oscillations in strained
Pyrometric interferometry during MBE growth of laser hetero-
In,Ga,_,As/GaAs structures, 302
structures, 299
Molecular beam epitaxial growth physics
Fundamental growth processes in the molecular beam epitaxy
of III-V compounds — an historical perspective, 3 Quantum dots
Molecular beam epitaxial multi-chamber growth/processing/char- Uniform III-V semiconductor quantum wire and quantum dot
acterization system arrays by natural self-faceting on patterned substrates, 32
MBE growth and applications of silicon interface control Quantum dots formed by ultrathin insertions in wide-gap
layers, 58 matrices, 40
Molecular beam epitaxial quantum nanostructures Equilibrium shape of steps and islands on polar CdTe(001)
Computer simulations of the transport and electromagnetic surface: application to the preparation of self organized tem-
properties of Molecular beam epitaxial-grown quantum plates for growth of nanostructures, 48
structures, 295 Molecular beam epitaxy of silicon—germanium nanostructures,
Molecular beam epitaxy of CdF,—CaF, superlattices Ss
MBE-growth peculiarities of fluoride (CdF,CaF,) thin film Growth and electrical characteristics of InAs/GaAs quantum
structures, 112 well and quantum dot structures, 89
Subject index
Quantum dot lasers: breakthrough in optoelectronics, 235 Semiconductor—insulator interface
Quantum wells Structure and electronic properties of ionic nano-layers MBE-
Growth and electrical characteristics of InAs/GaAs quantum grown on III-V semiconductors, 134
well and quantum dot structures, 89 Silicon
Quantum wires Molecular beam epitaxy of silicon—germanium nanostructures,
Uniform III-V semiconductor quantum wire and quantum dot 75
arrays by natural self-faceting on patterned substrates, 32 Si(113):As substrates
Equilibrium shape of steps and islands on polar CdTe(001) The heteroepitaxy of II-VI compounds on the non-isovalent
surface: application to the preparation of self organized tem- substrates (ZnTe/Si), 203
plates for growth of nanostructures, 48 SiGe heterostructures
SiGe — heterostructures for CMOS technology, 250
SiGe/Si heteroepitaxy by molecular beam epitaxy
Raman spectroscopy Strain-relaxed SiGe/Si heteroepitaxial structures of low thread-
The elastic strain and composition of self-assembled GeSi ing-dislocation density, 120
islands on Si(001), 171 Single-electron transport
Reflectance difference spectroscopy MBE-grown gate-controlled quantum-dot nanostructure and its
Reflectance difference spectroscopy: a powerful tool for in situ current—voltage characteristics, 97
investigations of II-VI compounds with Mn, 216 Static induction transistor technology
Reflection high energy electron diffraction Molecular layer epitaxy, 13
Investigations on the growth mechanism of wide-gap II-VI Step bunching caused by electric current heating
semiconductors by means of reflection high energy electron UHV-REM study of gold adsorption on the Si(111) surface,
diffraction, 159 142
Resonant cavity light emitting diodes Stepwise buffer layers
Growth of resonant cavity quantum well light emitting diodes Strain-relaxed SiGe/Si heteroepitaxial structures of low thread-
and two-junction solar cells by solid source molecular beam ing-dislocation density, 120
epitaxy, 260 Strongly coupled superlattice
Transport spectroscopy of quantum wires and superlattices, 267
Structural investigations by reflection high energy electron diffrac-
Scanning tunneling microscopy
tion
Equilibrium shape of steps and islands on polar CdTe(001) Structural properties of MBE grown GaMnAs layers, 165
surface: application to the preparation of self organized tem-
Superlattices of Si,Ge,, material system
plates for growth of nanostructures, 48
Ultra low energy SIMS, XTEM and X-ray diffraction methods
Imaging wurtzite GaN surfaces by molecular beam epitaxy-
for the characterization of a MBE grown short period (Si,.
scanning tunneling microscopy, 149
Ge,,)i¢ superlattices, 176
Secondary ion mass spectrometry Surface charge carriers recombination
Cation diffusion in MBE-grown CdTe layers, 220 Analysis of photoluminescence efficiency and surface recom-
Selective area epitaxy bination velocity of MBE-grown AlGaAs layers, 180
Selective area MBE of GaAs, AlAs and their alloys by periodic Surface migration of adsorbates
supply epitaxy, 6 UHV-REM study of gold adsorption on the Si(111) surface,
Self organization phenomena 142
Equilibrium shape of steps and islands on polar CdTe(001) Surface passivation
surface: application to the preparation of self organized tem- MBE growth and applications of silicon interface control
plates for growth of nanostructures, 48 layers, 58
Self-assembled quantum dots Surface roughness
Formation and properties of self-organized II-VI quantum A simple solid-on-solid model of epitaxial thin films growth:
islands, 68 inhomogeneous multilayered sandwiches, 28
Self-organization in epitaxy Surface state density
Molecular beam epitaxy of silicon—germanium nanostructures, Analysis of photoluminescence efficiency and surface recom-
75 bination velocity of MBE-grown AlGaAs layers, 180
Self-organized growth in molecular beam epitaxy Surface structure
Quantum dot lasers: breakthrough in optoelectronics, 235 Structure and electronic properties of ionic nano-layers MBE-
Self-organized quantum dots grown on III—V semiconductors, 134
Single-electron charging of self assembled quantum dots, 93 Surfactant-mediated epitaxy
Semiconductor low-dimensional structures The heteroepitaxy of II-VI compounds on the non-isovalent
Quantum dots formed by ultrathin insertions in wide-gap substrates (ZnTe/Si), 203
matrices, 40 Surfactant-mediated Molecular beam epitaxy
Semiconductor nanostructures Formation and properties of self-organized II-VI quantum
Single-electron charging of self assembled quantum dots, 93 islands, 68
MBE-grown gate-controlled quantum-dot nanostructure and its
current-voltage characteristics, 97 Ternary and quaternary barrier layers
312 Subject index
Magneto-optical properties of CdTe quantum wells with tern- Pyrometric interferometry during MBE growth of laser hetero-
ary MgMnTe and quaternary CdMnMgTe barriers, 223 structures, 299
Thermodynamic approach to theory of epitaxial growth
Transition thickness of semiconductor heteroepitaxy, 277 Wurtzite GaN
Transistor structures Imaging wurtzite GaN surfaces by molecular beam epitaxy-
MBE growth and applications of silicon interface control scanning tunneling microscopy, 149
layers, 58
Transition thickness from 2D to 3D growth X-ray diffraction and photoemission spectroscopy
Transition thickness of semiconductor heteroepitaxy, 277 Structural properties of MBE grown GaMnAs layers, 165
Transmission electron microscopy X-ray diffraction
Ultra low energy SIMS, XTEM and X-ray diffraction methods The elastic strain and composition of self-assembled GeSi
for the characterization of a MBE grown short period (Si,,. islands on Si(001), 171
Ge,,)io superlattices, 176 Ultra low energy SIMS, XTEM and X-ray diffraction methods
Transport and electromagnetic properties of quantum wells for the characterization of a MBE grown short period (Si,
Computer simulations of the transport and electromagnetic Ge,,)\6 superlattices, 176
properties of MBE-grown quantum structures, 295 Lateral and depth inhomogeneities in Zn-based heterostructures
Two-junction cascade solar cells grown on GaAs by MBE, 184
Growth of resonant cavity quantum well light emitting diodes X-ray diffuse scattering
and two-junction solar cells by solid source molecular beam Local order of Te impurity atoms and free electron concentra-
epitaxy, 260 tion in heavily doped GaAs:Te, 227
X-ray photoemission
Ultra-low energy secondary ion mass spectrometry Electronic structure of MBE grown CdYbTe: photoemission
Ultra low energy SIMS, XTEM and X-ray diffraction methods studies, 193
for the characterization of a MBE grown short period (Si,,.
Ge,,)\« superlattices, 176 Zn-based heterostructures
Ultrathin-layer insertions in wide-gap semiconductors Lateral and depth inhomogeneities in Zn-based heterostructures
Quantum dots formed by ultrathin insertions in wide-gap grown on GaAs by MBE, 184
matrices, 40 ZnSe films
UV resonant photoemission Lateral and depth inhomogeneities in Zn-based heterostructures
Electronic structure of MBE grown CdYbTe: photoemission grown on GaAs by MBE, 184
studies, 193 ZnTe films
Lateral and depth inhomogeneities in Zn-based heterostructures
Vertical cavity surface emitting lasers grown on GaAs by MBE, 184
MBE growth of planar microcavities with distributed Bragg The heteroepitaxy of II-VI compounds on the non-isovalent
reflectors, 290 substrates (ZnTe/Si), 203
