Table Of ContentCPSS Power Electronics Series
Xiong Du · Jun Zhang · Gaoxian Li ·
Yaoyi Yu · Cheng Qian · Rui Du
Thermal Reliability
of Power
Semiconductor
Device in
the Renewable
Energy System
CPSS Power Electronics Series
SeriesEditors
WeiChen,FuzhouUniversity,Fuzhou,Fujian,China
YongzhengChen,LiaoningUniversityofTechnology,Jinzhou,Liaoning,China
XiangningHe,ZhejiangUniversity,Hangzhou,Zhejiang,China
YongdongLi,TsinghuaUniversity,Beijing,China
JingjunLiu,Xi’anJiaotongUniversity,Xi’an,Shaanxi,China
AnLuo,HunanUniversity,Changsha,Hunan,China
XikuiMa,Xi’anJiaotongUniversity,Xi’an,Shaanxi,China
XinboRuan,NanjingUniversityofAeronauticsandAstronautics,NanjingShi,
Jiangsu,China
KuangShen,ZhejiangUniversity,Hangzhou,Zhejiang,China
DianguoXu,HarbinInstituteofTechnology,HaerbinShi,Heilongjiang,China
JianpingXu,XinanJiaotongUniversity,Chengdu,Sichuan,China
MarkDehongXu,ZhejiangUniversity,Hangzhou,Zhejiang,China
XiaomingZha,WuhanUniversity,Wuhan,Hubei,China
BoZhang,SouthChinaUniversityofTechnology,GuangzhouShi,Guangdong,
China
LeiZhang,ChinaPowerSupplySociety,Tianjin,China
XinZhang,HefeiUniversityofTechnology,HeifeiShi,Anhui,China
ZhengmingZhao,TsinghuaUniversity,HaidianQu,Beijing,China
QionglinZheng,BeijingJiaotongUniversity,Haidian,Beijing,China
LuoweiZhou,ChongqingUniversity,Chongqing,Sichuan,China
Thisseriescomprisesadvancedtextbooks,researchmonographs,professionalbooks,
and reference works covering different aspects of power electronics, such as Vari-
able Frequency Power Supply, DC Power Supply, Magnetic Technology, New
EnergyPowerConversion,ElectromagneticCompatibilityaswellasWirelessPower
Transfer Technology and Equipment. The seriesfeatures leading Chinese scholars
andresearchersandpublishesauthoredbooksaswellaseditedcompilations.Itaims
toprovidecriticalreviewsofimportantsubjectsinthefield,publishnewdiscoveries
andsignificantprogressthathasbeenmadeindevelopmentofapplicationsandthe
advancement of principles, theories and designs, and report cutting-edge research
andrelevanttechnologies.TheCPSSPowerElectronicsserieshasaneditorialboard
withmembersfromtheChinaPower Supply Society andaconsultingeditorfrom
Springer.
Readership:Researchscientistsinuniversities,researchinstitutionsandtheindustry,
graduatestudents,andseniorundergraduates.
· · · ·
Xiong Du Jun Zhang Gaoxian Li Yaoyi Yu
·
Cheng Qian Rui Du
Thermal Reliability of Power
Semiconductor Device
in the Renewable Energy
System
XiongDu JunZhang
SchoolofElectricalEngineering CollegeofEnergyandElectrical
StateKeyLaboratoryofPower Engineering
TransmissionEquipmentandSystem HohaiUniversity
SecurityandNewTechnology Nanjing,China
ChongqingUniversity
Chongqing,China YaoyiYu
SchoolofElectricalEngineering
GaoxianLi ChongqingUniversity
SchoolofElectricalEngineering Chongqing,China
ChongqingUniversity
Chongqing,China RuiDu
SchoolofElectricalEngineering
ChengQian ChongqingUniversity
SchoolofElectricalEngineering Chongqing,China
ChongqingUniversity
Chongqing,China
ISSN 2520-8853 ISSN 2520-8861 (electronic)
CPSSPowerElectronicsSeries
ISBN 978-981-19-3131-4 ISBN 978-981-19-3132-1 (eBook)
https://doi.org/10.1007/978-981-19-3132-1
©TheEditor(s)(ifapplicable)andTheAuthor(s),underexclusivelicensetoSpringerNature
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Preface
Therapiddevelopmentofrenewableenergygrid-connectedpower-generationtech-
nologyrequireshigherreliabilityofpowerconverter.Inthefieldofrenewableenergy
system, serious accidents would occur in the system due to the failure of power
converter.Industrysurveyindicatesthat,thepowersemiconductordeviceisoneof
the most prone-to-failure components in the system. Since the renewable energy
systemhasagreatinfluenceonthepowergrid,itisofgreatsignificancetoevaluate
thereliabilityofpowersemiconductordeviceandstudyitsreliabilityimprovement
methodtoensurealow-costandlong-termreliableoperatingenvironment.
Compared with the reliability evaluation of conventional power equipment, the
reliability evaluation of power semiconductor device applied in renewable energy
systemisfacingnewchallengesandproblems,suchas:
(1) Complexexternalenvironment:Powersemiconductordeviceusedinthefield
of renewable energy system are generally in harsh or even extreme external
environments, and its reliability is affected by many factors, such as high
temperature,sandstorm,humidity,lightning,saltspray,etc.
(2) Unsteady operation condition: The input of renewable energy has great
randomness and uncertainty, such as wind speed, light intensity, water flow,
etc.,whichresultsinthepowersemiconductordeviceenduringgreatdynamic
loadimpactforalongtime.
This book focuses on the thermal reliability of power semiconductor device in
therenewableenergysystembylookingatthefailuremechanismofdevice,thermal
parameters monitoring, junction temperature estimation, lifetime evaluation, and
thermalmanagement.Detailedtheoreticalanalysisandabundantexperimentaltests
and case studies are presented to explain existing thermal reliability improvement
techniques. The development trend and future expectations of the device thermal
reliabilityarealsodiscussedinthisbook.Thisbookconsistsofsevenchaptersand
isorganizedasfollows.
Toreducetheemissionofcarbondioxide,renewableenergyconversionsystem
has attracted increasing attention worldwide. Since the power converter plays an
important role in the energy conversion, a reliable power semiconductor device is
v
vi Preface
desirable.Chapter1introducesthedevelopmentofrenewableenergysystem,power
converter,andpowersemiconductordevice.
TheIGBTmoduleiswidelyusedintherenewableenergysystemandischosen
asanexampleofpowersemiconductordeviceinthisbook.Chapter2presentstwo
typesofIGBTmodule,namely wire-bondtypeandpress-packtype.Thetransient
failure mechanism and gradual failure mechanism of two types are classified and
summarized.
The reliability of power semiconductor device is closely related to the thermal
parameters.Chapter3givesthederivationofthermalnetworkfromthermalresponse
andcomparesthedifferencebetweentheCauer-typemodelandFoster-typemodel.A
methodbasedonthecasetemperaturetomonitortheCauer-typethermalparameters
isalsodescribed.
Chapter 4 summarizes the junction temperature extraction methods and intro-
duces a measurement method that uses the switching characteristic of the device.
Because the lifetime prediction needs to handle a large amount of mission profile
data, a numerical junction temperature calculation method, which computes with
highspeed,isalsointroducedinthischapter.
Since the lifetime model is the basis of lifetime evaluation, Chap. 5 presents
existingacceleratedagingtestsandlifetimemodels.Also,thelifetimeevaluationof
awindturbinesystemisoutlined.Probabilityestimationanddistributioncharacter-
isticsoflifetimeconsumptionarepresented,whichcanbeusedtoguidethethermal
managementofdevice.
Thereliabilityofpowersemiconductordevicedecreaseswiththeriseoftemper-
aturefluctuation.Chapter6reviewsthethermalcontroltechniquesforthereduction
oftemperaturefluctuation.Tobalancethebenefitandriskofthermalmanagement,
amethodbasedontheeffectivenessofthermalmanagementisdescribed.
Chapter7discussesthefuturedevelopmentofthermalreliabilityfromtheaspects
ofthermalparametermonitoring,lifetimeevaluation,andSiCdeviceapplication.
Chongqing,China XiongDu
Nanjing,China JunZhang
Chongqing,China GaoxianLi
Chongqing,China YaoyiYu
Chongqing,China ChengQian
Chongqing,China RuiDu
Acknowledgments
This research monograph systematically summarizes the research work on the
reliabilityofpowersemiconductordevicesince2010.
TheworkinthisbookwassupportedinpartbytheNationalScienceFoundation
of China for Distinguished Young Scholars under grant 52125704, in part by the
National Natural Science Foundation of China under grant 52107188, and in part
by the National Natural Science Foundation of China under grant 51577020. We
wouldliketoexpressoursincerethankstotheNationalNaturalScienceFoundation
ofChina.
We would like to thank our organizations, School of Electrical Engineering,
State Key Laboratory of Power Transmission Equipment and System Security
andNewTechnology,ChongqingUniversityandCollegeofEnergyandElectrical
Engineering, Hohai University, for providing supportive conditions to do research
on the reliability of power electronics. In addition, we would like to thank all the
students who participated in the relevant work for their contributions to this book,
includingHongjiLiu,TengfeiLi,YingzhouPeng,ShuaiZheng,WenshanXiao,Xiao
Du, etc. It also has been a great pleasure to work with the colleagues of Springer
NaturePress,andChinaPowerSupplySociety(CPSS).Thesupportandhelpfrom
WayneHuandSaranyaKalidossaregreatlyappreciated.
vii
Contents
1 Introduction ................................................... 1
1.1 DevelopmentoftheRenewableEnergySystem ................. 1
1.2 RoleofthePowerConverterintheRenewableEnergySystem .... 7
1.3 Application of the Power Semiconductor Device
intheConverter ............................................ 10
References ..................................................... 14
2 ThermalFatigueFailureMechanismofIGBTModule ............. 17
2.1 TypeandStructureoftheIGBTModule ....................... 17
2.1.1 Wire-BondModule ................................... 18
2.1.2 RigidPress-PackModule ............................. 19
2.1.3 Safety-CompliantPress-PackModule ................... 19
2.2 FailuresoftheIGBTModuleWhenUsedintheRenewable
EnergySystem ............................................. 20
2.3 TransientFailure ........................................... 22
2.3.1 Open-CircuitFailure ................................. 22
2.3.2 Short-CircuitFailure ................................. 23
2.4 GradualFailure ............................................ 26
2.4.1 GradualFailureoftheWire-BondIGBTModule ......... 26
2.4.2 GradualFailureofthePress-PackIGBTModule .......... 29
References ..................................................... 31
3 ThermalModelandThermalParameterMonitoring .............. 35
3.1 ReviewofExistingThermalParameterMonitoringMethods ...... 35
3.2 One-DimensionalThermalNetworkModel .................... 37
3.2.1 Steady-StateThermalResponse ........................ 37
3.2.2 TransientThermalResponse ........................... 40
3.3 Structural Function Method for the Thermal Parameter
Estimation ................................................. 43
3.4 ThermalParameterIdentificationUsingtheCaseTemperature .... 49
3.4.1 TheoreticalAnalysis .................................. 49
3.4.2 ExperimentalValidation .............................. 52
ix
x Contents
3.4.3 PracticalConsiderations .............................. 60
References ..................................................... 69
4 JunctionTemperatureExtractionofthePowerSemiconductor
Device ......................................................... 73
4.1 OverviewoftheJunctionTemperatureExtractionMethods ....... 73
4.1.1 DirectExtractionMethods ............................ 73
4.1.2 IndirectExtractionMethods ........................... 76
4.2 TemperatureExtractionBasedontheSwitchingCharacteristic
ofDevice .................................................. 78
4.2.1 MillerPlateauofGateVoltageDuringtheTurn-On
TimeastheTSEP .................................... 78
4.2.2 ConstantCurrentDriveCircuitfortheMeasurement
ofMillerPlateauofGateVoltage ....................... 81
4.2.3 RelationshipBetween theMillerPlateauofGate
VoltageandJunctionTemperature ...................... 82
4.3 ThermalFlowandEquivalentCircuitAnalysisoftheIGBT
Module ................................................... 85
4.3.1 HeatTransferintheIGBTModuleandHeatSink ......... 85
4.3.2 FosterandCauerThermalNetwork ..................... 86
4.3.3 Multi-Heat-SourceThermalNetwork ................... 88
4.3.4 Electro-thermalAnalogyTheory ....................... 89
4.4 TemperatureCalculationfortheIGBTModule ................. 92
4.4.1 ThermalNetworkoftheIGBTModule .................. 92
4.4.2 PowerLossEstimationoftheDevice ................... 93
4.4.3 JunctionTemperatureCalculationattheSwitching
Cycle .............................................. 94
4.4.4 JunctionTemperatureCalculationattheFundamental
FrequencyCycle ..................................... 97
4.4.5 SimulationValidation ................................. 99
4.4.6 ExperimentalValidation .............................. 100
References ..................................................... 105
5 Multi-time Scale Lifetime Evaluation of the Device
intheRenewableEnergySystem ................................. 107
5.1 AnalysisoftheDeviceLifetimeInfluencingFactors ............. 107
5.2 LifetimeModelandParameterExtraction ...................... 109
5.2.1 AnalyticalModel .................................... 109
5.2.2 Physics-of-FailureModel ............................. 111
5.3 LifetimeEvaluationoftheIGBTModuleintheWindEnergy
System .................................................... 115
5.3.1 SystemDescriptionandWindTurbineModel ............ 116
5.3.2 PowerLossandJunctionTemperatureCalculation ........ 119
5.3.3 LifetimeCalculation .................................. 122
5.3.4 Rain-FlowCountingAlgorithm ........................ 123
