The Fourth Terminal: Benefits of Body-Biasing Techniques for FDSOI Circuits and Systems

433 Pages·2020·23.627 MB·English

by  Sylvain Clerc, Thierry Di Gilio, Andreia Cathelin

Integrated Circuits and Systems
Sylvain Clerc
Thierry Di Gilio
Andreia Cathelin  Editors
The Fourth
Terminal
Benefits of Body-Biasing Techniques
for FDSOI Circuits and Systems
Integrated Circuits and Systems
Serieseditor
AnanthaP.Chandrakasan,MassachusettsInstituteofTechnology
Cambridge,MA,USA
Moreinformationaboutthisseriesathttp://www.springer.com/series/7236
Sylvain Clerc • Thierry Di Gilio (cid:129) Andreia Cathelin
Editors
The Fourth Terminal
Benefits of Body-Biasing Techniques
for FDSOI Circuits and Systems
Editors
SylvainClerc ThierryDiGilio
STMicroelectronics STMicroelectronics
Crolles,France Crolles,France
AndreiaCathelin
STMicroelectronics
Crolles,France
ISSN1558-9412 ISSN1558-9420 (electronic)
IntegratedCircuitsandSystems
ISBN978-3-030-39495-0 ISBN978-3-030-39496-7 (eBook)
https://doi.org/10.1007/978-3-030-39496-7
©SpringerNatureSwitzerlandAG2020
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Toourfamilies.
vi
FD-SOItransistorTEM,thetransistors’channelisthevolumebetweenthegatesandthewhite
coloredburiedoxide.CopyrightSTMicroelectronics.Usedwithpermission
Foreword
This book deals with applying a voltage potential to the volume below the buried
oxideintheTEMadjacentphotography,andthismodulatestransistor’sV ;hence,
T
themotto“FD-SOIBody-BiasenablessoftwaredefinedV .”
T
Crolles,France SylvainClerc
Crolles,France ThierryDiGilio
Crolles,France AndreiaCathelin
December2019
vii
Acknowledgements
The authors are indebted to the many people who supported, helped, contributed,
or reviewed this book. We specially thank Robin Wilson, Martin Cochet on top
ofhisownchapterwriting,YannCarminati,FredericPaillardet,FredericHasbani,
Dominique Bousquet, Phillipe Larré, Lise Doyen, Philippe Cathelin, Laurent Le-
Pailleur, Sylvain Biard, Mourad Djouder, Stéphane Hanriat, Jean-Michel Mirabel,
PhilippeQuinio,CyrilColin-Madan,LaurentMalier,andPatrickAidoune.Lastbut
not least, the authors would like to acknowledge the leading contribution of Joel
HartmanninFD-SOItechnologydeployment.
Wealsoacknowledge thecontribution ofmany STMicroelectronics Colleagues
involved beside the course of their regular duties; we thank you all gentlewomen
andgentlemen.
ix
Contents
1 Introduction................................................................. 1
AndreiaCathelinandSylvainClerc
PartI DeviceLevelandGeneralStudiesforAnalogandDigital
2 FD-SOITechnology ........................................................ 9
FranckArnaud
3 Body-BiasforDigitalDesigns ............................................. 59
SylvainClercandRicardoGomezGomez
4 Body-BiasinginFD-SOIforAnalog,RF,andMillimeter-Wave
Designs....................................................................... 85
AndreiaCathelin
5 SRAMBitcellFunctionalityUnderBody-Bias.......................... 93
LorenzoCiampolini
PartII DesignExamples:FromAnalogRFandmmWtoDigital.
FromBuildingBlocksandCircuitstoSoCs
6 Coarse/FineDelayElementDesignin28nmFD-SOI.................. 119
IliasSourikopoulos,AndreiaCathelin,AndreasKaiser,
andAntoineFrappé
7 Millimeter-WaveDistributedOscillatorsin28nmFD-SOI
Technology................................................................... 135
RaphaëlGuillaume,AndreiaCathelin,andYannDeval
8 Millimeter-WavePowerAmplifiersfor5GApplicationsin
28nmFD-SOITechnology................................................. 169
FlorentTorres,AndreiaCathelin,andEricKerhervé
xi