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About Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices
Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features. Contents: Terrestrial Neutron Spectrometry and Dosimetry; Irradiation Testing in the Terrestrial Field; Neutron Irradiation Test Facilities; Review and Discussion of Experimental Data; Monte Carlo Simulation Methods; Simulation Results and Their Implications; International Standardization of the Neutron Test Method; Summary and Challenges.
Detailed Information
| Author: | Takashi Nakamura, Eishi Yahagi, Hideaki Kameyama, Mamoru Baba |
|---|---|
| Publication Year: | 2008 |
| ISBN: | 9812778810 |
| Pages: | 364 |
| Language: | English |
| File Size: | 13.97 |
| Format: | |
| Price: | FREE |
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