Spontaneous Ordering in Semiconductor Alloys

482 Pages·2002·39.66 MB·English

by  Tohru Suzuki (auth.)

Spontaneous Ordering
in Semiconductor Alloys
Spontaneous Ordering
in Semiconductor Alloys
Edited by
Angelo Mascarenhas
National Renewable Energy Laboratory (NREL)
Golden, Colorado
Springer Science+Business Media, LLC
ISBN 978-1-4613-5167-2 ISBN 978-1-4615-0631-7 (eBook)
DOI 10.1007/978-1-4615-0631-7
©2002 Springer Science+Business Media New York
Originally published by Kluwer Academic I Plenum Publishers, New York in 2002
Softcover reprint of the hardcover 15t edition 2002
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Contributors
S. PhiLLipAhrenkiel,NationalRenewableEnergyLaboratory,1617ColeBoule
vard, Golden, Colorado, USA
Francese Alsina, University of Barcelona, Bella Terra, Spain, and National
Renewable Energy Laboratory, Golden, Colorado, USA
Hyeonsik M. Cheong, Department ofPhysics, Sogang University, Seoul, Ko
rea, and National Renewable Energy Laboratory, Golden, Colorado, USA
Gottfried H. Dohler, Institut fur Technische Physik I, Universitat Erlangen
Nurnberg, Erwin-Rommel-Str.l 91058 Erlangen, Germany
Rebecca L. Forrest, University of California-Los Angeles, Department of
Materials Science
Mark C. Hanna, National Renewable Energy Laboratory, Golden, Colorado,
USA
PeterKiesel, InstitutfurTechnische Physik I, UniversitatErlangen-Niimberg,
Erwin-Rommel-Str.l, 91058 Erlangen, Germany
Thomas Kippenberg, Institut fUr Technische Physik I, Universitat Erlangen
Niimberg, Erwin-Rommel-Str.l, 91058 Erlangen, Germany
Michael Kozhevnikov, Gordon McKay Laboratory of Applied Science, Har
vard University, 9 Oxford Street, Cambridge, Massachusetts, USA
Peter Krispin, Paul-Drude-Institut fiir Festkorperelektronik, Hausvogteiplatz
5-7, 10117 Berlin, Germany
Jianhua Li, Physics Department, University of Houston, Texas, USA
GeraldMartinez, Grenoble High Magnetic Field Laboratory MPI/CNRS, 25,
Av. des Martyrs, 38042Grenoble Cedex 9, France (on leave from the Institute
of Physics, Academy of Sciences, Prague, Czech Republic)
AngeloMascarenhas, National Renewable Energy Laboratory, Golden, Colo
rado, USA
v
vi Contributors
Dirk C. Meyer, Institut fUr Kristallographie und Festkorperphysik, Fach
richtungPhysik,TechnischeUniversitatDresden, D-01062Dresden,Germany
Venkatesh Narayanamurti, Gordon McKay Laboratory of Applied Science,
Harvard University, 9 Oxford Street, Cambridge, Massachusetts, USA
AndrewG. Norman, NationalRenewableEnergyLaboratory, 1617ColeBoule
vard, Golden Colorado, USA
PeterPaufier,InstitutfurKristallographieundFestkorperphysik,Fachrichtung
Physik, Technische Universitat Dresden, D-01062 Dresden, Germany
Ines Pietzonka, Dept. ofSolidState Physics, Lund University, Box 118, S-221
00 Lund, Sweden
KurtRichter,Institutfur Kristallographie undFestkorperphysik,Fachrichtung
Physik, Technische Universitat Dresden, D-01062 Dresden, Germany
Torsten Sass,Dept. ofSolidStatePhysics,LundUniversity, Box 118,S-22100
Lund, Sweden
Maeng-Je Seong, National Renewable Energy Laboratory, Golden, Colorado,
USA
Jeremy D. Steinshnider, Texas A&M University, DepartmentofPhysics, Col
lege Station, Texas, USA
GeraldB. Stringfellow, College ofEngineering,University ofUtah, SaltLake
City, Utah, USA
Tohru Suzuki, System Devices and Fundamental Research, NEC Corporation
Kazuo Uchida, Department of Electrical Engineering, The University of
Electro-Communications, 1-5-1, Choufugaoka, Choufu, Tokyo 182, Japan
Gerald Wagner, Institut fur Oberftachenmodifizierung Leipzig, Germany
Su-HuaiWei, NationalRenewableEnergyLaboratory,Golden,Colorado,USA
Michael B. Weimer, Texas A&M University, Department ofPhysics, College
Station, Texas, USA
Peter Y. Yu, Department of Physics, University of California, Berkeley and
Materials Science Division, Lawrence Berkeley National Laboratory, Berke
ley, California, USA
JanZeman,GrenobleHighMagneticFieldLaboratoryMPIICNRS,25,Av.des
Martyrs, 38042 Grenoble Cedex 9, France (on leave from the Institute of
Physics, Academy of Sciences, Prague, Czech Republic)
Yong Zhang, NationalRenewableEnergy Laboratory,Golden,Colorado,USA
Preface
Thephenomenonofspontaneousorderinginsemiconductoralloys,which
can be categorized as a self-organized process, is observed to occur sponta
neously during epitaxial growth of certain ternary alloy semiconductors and
results in a modification oftheir structural, electronic, and optical properties.
Therehasbeenagreatdealofinterestinlearninghowtocontrolthisphenome
non so that it may be used for tailoring desirable electronic and optical
properties. Therehasbeenevengreaterinterest inexploitingthe phenomenon
for its unique ability in providing an experimental environment ofcontrolled
alloystatisticalfluctuations. Assuch,itimpactsareasofsemiconductorscience
and technology related to the materials science ofepitaxial growth, statistical
mechanics, and electronic structure of alloys and electronic and photonic
devices. During the past two decades, significant progress has been made
toward understanding the mechanisms that drive this phenomenon and the
changes in physical properties that result from it. A variety ofexperimental
techniques have been used to probe the phenomenon and several attempts
madeatprovidingtheoreticalmodelsbothfortheorderingmechanismsaswell
as electronic structure changes.
The various chapters of this book provide a detailed account of these
efforts during the pastdecade. The first chapterprovides an elaborate account
ofthe phenomenon, with an excellent perspective ofthe structural and elec
tronicmodificationsitinduces.Thesecondchapterfocusesonorderingmecha
nisms,thethirdontheuseofsurfactantstocontrolthephenomenon,thefourth
and sixth on X-ray studies of the order parameter, the fifth and seventh on
electron microscopy/electrondiffraction, and theeighthondiffraction anoma
lous fine structure studies. The remainder ofthe chapters concern electronic
properties, with the ninth focusing on ballistic electron emission microscopy
studies, the tenth and eleventh on the physics ofalloy statistical fluctuations,
the twelfth on upconversion phenomena, the thirteenth on polarization
sensitive devices, the fourteenth on phonons, and the fifteenth on electronic
structure calculations. The sixteenth chapter deals with the issue of sponta
neouselectricfieldsandthebandalignmentbetweenorderedGaInPandGaAs,
Vll
Vlll Preface
which has become especially importantbecause ofthe widespread use ofthis
systemforheterojunction bipolartransistors usedfor cellularcommunications
applications.
Itis the dedicated efforts ofthe authors ofthe various chapters that have
made this book possible, and I am deeply grateful for theircontributions. The
extensive research in this field conducted at NREL would not have been
possiblewithoutthesupportoftheDivisionofMaterialsSciencelBasicEnergy
Sciences/Office ofScience ofthe U.S. Department ofEnergy. The help with
technical editing from Irene Medina and Don Gwinner is gratefully acknowl
edged. Finally, I wish to thank Dr. S. K. Deb for his unwavering encourage
ment offundamental research at NREL, and especially of this project.
Angelo Mascarenhas
Golden, Colorado
Contents
1. Basic Aspects ofAtomic Ordering in 111-V Semiconductor
Alloys
T. Suzuki
1. Introduction 1
2. CuPt-B Atomic Ordering 5
2.1 Bandgap Anomaly and CuPt-B Ordering 5
2.2 Growth Conditions Dependence of CuPt-B Ordering 8
2.2.1 Group-V Source Pressure and Growth Temperature 8
2.2.2 Doping 10
2.2.3 Growth Methods and Source Materials. .......... 12
2.3 Bond-Length Difference 13
2.4 Substrate Orientation Dependence 14
2.4.1 Two Kinds of Asymmetries in Variant Appearance 14
2.4.2 Substrates with <1>8 and <I>A Misorientations
from (001) 16
2.4.3 (110) Substrates 20
2.5 Degree of Ordering 20
3. TP-A and CuPt-A Atomic Ordering 22
3.1 TP-A Ordering 22
3.1.1 Structure and Variants 22
3.1.2 Surface Reconstructions ....................... 24
3.2 CuPt-A Ordering 27
3.2.1 Structure and Variants 27
3.2.2 Surface Reconstructions ....................... 28
4. Ordering Mechanisms ................................. 29
4.1 CuPt-B, TP-A, and CuPt-A Ordering 29
4.2 Famatinite, Chalcopyrite, and CuAu-I Ordering 35
5. Concluding Remarks. ......... .................. ...... 36
References 38
ix
x Contents
2. The Nature and Origin ofAtomic Ordering in Group III-V
Antimonide Semiconductor Alloys
A.G. Norman
I. Introduction 45
2. Atomic Ordering in Group III-V Antimonide Semiconductors
Alloys 49
2.1 Nature of Ordering. ... ...... ...................... 49
2.1.1 Possible Ordered Structures .................... 49
2.1.2 Experimental Observations 50
3. Origins ofAtomic Ordering in Semiconductor Alloys ....... 63
3.1 CUPt-Type Atomic Ordering 63
3.1.1 Important Characteristics ofthe Observed CuPt-
Type Ordering ............................... 63
3.1.2 "Bond Length" Models ....................... 65
3.1.3 Surface Reconstruction Models ....... 68
3.2 Antiphase Superlattice in MBE GaAsSb Grown at High
Temperature 85
3.3 CuAu-I Type Ordering in Layers Grown on (110)
Substrates 89
3.4 CuAu-I and Chalcopyrite Ordering in Layers Grown in
(001) Substrates 90
4. Conclusions 90
References 92
3. Effects of the Surface on CuPt Ordering During OMVPE
Growth
G.B. Stringfellow
I. Introduction 99
2. Review of the Ordering Processes ....................... 101
3. Effects of Surfaces 102
3.1 Temperature 103
3.2 Partial Pressure of the P Precursor 104
4. Effects of Surfactants 107
5. Tellurium. ........... ..... .......................... 108
6. Antimony ........................................... 109
7. Summary 113
References 115
Contents xi
4. X-Ray Diffraction Analysis of Ordering in Epitaxial III-V
Alloys
R.L. Forrest
I. Introduction 119
2. Overview ofX-Ray Diffraction Theory 120
2.1 Kinematical Diffraction Theory. ..................... 120
2.2 Dynamical Diffraction Theory ...... ................. 123
2.3 Structure Factor 125
3. Long-Range Order 126
3.1 Long-Range Order Parameter 126
3.2 Structure Factor of an Ordered Crystal. ............... 127
3.3 Measurement of the Long-Range Order Parameter 130
4. Reciprocal Space Mapping ofOrdered Domains 132
5. Short-Range Order 134
5.1 Short-Range Order Diffuse Intensity and Order
Parameters 134
5.2 Coexistence ofLong- and Short-Range Order. ......... 139
5.3 Measurement of SRO in Epitaxial III-V Alloys. ...... .. 139
6. Lateral Compositional Modulation. ............... ....... 142
7. Summary 144
References 144
5. Surface Morphology and Formation of Antiphase Boundaries
in Ordered (GaIn)P-A TEM Study
T. Sass and1. Pietzonka
1. Introduction 147
2. Transmission Electron Microscopy 149
3. Experimental. ....................................... 151
4. Results and Discussion 151
5. Summary 161
References 162
6. X-Ray Characterization of CuPt Ordered III-V Ternary
Alloys
J. Li
1. Introduction 165
2. Results from TED and TEM Studies ... .................. 167
3. X-Ray Diffraction Measurements 168