SOI substrate, element substrate, semiconductor device, electro-optical apparatus, electronic ...

52 Pages·2013·3.59 MB·English

US 20030201508A1
(19) United States
(12) Patent Application Publication (10) Pub. No.: US 2003/0201508 A1
Yasukawa (43) Pub. Date: Oct. 30, 2003
(54) S01 SUBSTRATE, ELEMENT SUBSTRATE, (30) Foreign Application Priority Data
SEMICONDUCTOR DEVICE,
ELECTRO-OPTICAL APPARATUS, Nov. 30, 2000 (JP) .................................... .. 2000-365714
ELECTRONIC EQUIPMENT, METHOD OF Jun. 22, 2001 (JP) . . . . . . . . . . . . .. 2001-190521
MANUFACTURING THE S01 SUBSTRATE, Sep. 25, 2001 (JP) .................................... .. 2001-292645
METHOD OF MANUFACTURING THE
ELEMENT SUBSTRATE, AND METHOD OF
MANUFACTURING THE Publication Classi?cation
ELECTRO-OPTICAL APPARATUs
(51) Int. C1.7 .............................................. .. H01L 31/0232
(75) Inventor: Masahiro Yasukawa, Chino-shi (JP)
(52) us. Cl. ............................................................ .. 257/435
Correspondence Address:
OLIFF & BERRIDGE, PLC
P. O. Box 19928
(57) ABSTRACT
Alexandria, VA 22320 (US)
(73) Assignee: Seiko Epson Corporation, Tokyo (JP)
An SOI (Silicon On Insulator) substrate is provided With: a
support substrate (201); a single crystal silicon layer (202)
(21) Appl. No.: 10/431,401
disposed above one surface of the support substrate; an
insulation portion (205) disposed betWeen the support sub
(22) Filed: May 8, 2003
strate and the single crystal silicon layer, the insulation
Related US. Application Data portion comprising a single layer of an insulation ?lrn or a
larnination structure of a plurality of insulation ?lms, and
(62) Division of application No. 09/988,332, ?led on Nov. including a silicon nitride ?lrn or a silicon nitride oxide ?lrn
19, 2001, noW Pat. No. 6,583,440. (204).
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