Table Of ContentSilicon
Nanodevices
Edited by
Henry H. Radamson and Guilei Wang
Printed Edition of the Special Issue Published in Nanomaterials
www.mdpi.com/journal/nanomaterials
Silicon Nanodevices
Silicon Nanodevices
Editors
Henry H. Radamson
Guilei Wang
MDPI‚Basel‚Beijing‚Wuhan‚Barcelona‚Belgrade‚Manchester‚Tokyo‚Cluj‚Tianjin
Editors
HenryH.Radamson GuileiWang
Optoelectronics BeijingSuperstringAcademy
GIICS ofMemoryTechnology
Guangzhou Beijing
China China
EditorialOffice
MDPI
St. Alban-Anlage66
4052Basel,Switzerland
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Contents
AbouttheEditors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vii
Prefaceto”SiliconNanodevices” . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix
HenryH.RadamsonandGuileiWang
SpecialIssue: SiliconNanodevices
Reprintedfrom: Nanomaterials2022,12,1980,doi:10.3390/nano12121980 . . . . . . . . . . . . . . 1
YongliangLi,FeiZhao,XiaohongCheng,HaoyanLiu,YingZanandJunjieLietal.
Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical
Characteristics
Reprintedfrom: Nanomaterials2021,11,1689,doi:10.3390/nano11071689 . . . . . . . . . . . . . . 3
Rui-ZiHu,Rong-LongMa,MingNi,XinZhang,YuanZhouandKeWangetal.
AnOperationGuideofSi-MOSQuantumDotsforSpinQubits
Reprintedfrom: Nanomaterials2021,11,2486,doi:10.3390/nano11102486 . . . . . . . . . . . . . . 13
QideYao,XueliMa,HanxiangWang,YanrongWang,GuileiWangandJingZhangetal.
Investigate on the Mechanism of HfO /Si Ge Interface Passivation Based on
2 0.7 0.3
Low-TemperatureOzoneOxidationandSi-CapMethods
Reprintedfrom: Nanomaterials2021,11,955,doi:10.3390/nano11040955 . . . . . . . . . . . . . . . 29
Jian-HuanWang,TingWangandJian-JunZhang
EpitaxialGrowthofOrderedIn-PlaneSiandGeNanowiresonSi(001)
Reprintedfrom: Nanomaterials2021,11,788,doi:10.3390/nano11030788 . . . . . . . . . . . . . . . 39
LuXie,HuilongZhu,YongkuiZhang,XuezhengAi,JunjieLiandGuileiWangetal.
Investigation on Ge Si -Selective Atomic Layer Wet-Etching of Ge for Vertical
0.8 0.2
Gate-All-AroundNanodevice
Reprintedfrom: Nanomaterials2021,11,1408,doi:10.3390/nano11061408 . . . . . . . . . . . . . . 49
YangyangLi,HuilongZhu,ZhenzhenKong,YongkuiZhang,XuezhengAiandGuileiWang
etal.
TheEffectofDopingontheDigitalEtchingofSilicon-SelectiveSilicon–GermaniumUsingNitric
Acids
Reprintedfrom: Nanomaterials2021,11,1209,doi:10.3390/nano11051209 . . . . . . . . . . . . . . 65
YuanhaoMiao,GuileiWang,ZhenzhenKong,BuqingXu,XueweiZhaoandXueLuoetal.
ReviewofSi-BasedGeSnCVDGrowthandOptoelectronicApplications
Reprintedfrom: Nanomaterials2021,11,2556,doi:10.3390/nano11102556 . . . . . . . . . . . . . . 79
XueweiZhao,GuileiWang,HongxiaoLin,YongDu,XueLuoandZhenzhenKongetal.
HighPerformancep-i-nPhotodetectorsonGe-on-InsulatorPlatform
Reprintedfrom: Nanomaterials2021,11,1125,doi:10.3390/nano11051125 . . . . . . . . . . . . . . 123
YongDu,BuqingXu,GuileiWang,YuanhaoMiao,BenLiandZhenzhenKongetal.
ReviewofHighlyMismatchedIII-VHeteroepitaxyGrowthon(001)Silicon
Reprintedfrom: Nanomaterials2022,12,741,doi:10.3390/nano12050741 . . . . . . . . . . . . . . . 135
Md. HasanRazaAnsari,UdayaMohananKannanandSeongjaeCho
Core-Shell Dual-Gate Nanowire Charge-Trap Memory for Synaptic Operations for
NeuromorphicApplications
Reprintedfrom: Nanomaterials2021,11,1773,doi:10.3390/nano11071773 . . . . . . . . . . . . . . 181
v
Prem. C.Pandey,ShubhangiShuklaandRogerJ.Narayan
Organotrialkoxysilane-Functionalized Prussian Blue Nanoparticles-Mediated Fluorescence
SensingofArsenic(III)
Reprintedfrom: Nanomaterials2021,11,1145,doi:10.3390/nano11051145 . . . . . . . . . . . . . . 195
NaHan,JianjiangLi,XuechenWang,ChuanlongZhang,GangLiuandXiaohuaLietal.
Flexible Carbon Nanotubes Confined Yolk-Shelled Silicon-Based Anode with Superior
ConductivityforLithiumStorage
Reprintedfrom: Nanomaterials2021,11,699,doi:10.3390/nano11030699 . . . . . . . . . . . . . . . 215
vi
About the Editors
HenryH.Radamson
Henry H. Radamson received Ph.D. degree in semiconductor materials from Linko¨ping
University in Sweden in 1996. He joined KTH Royal Institute of Technology in Stockholm in 1997
as senior scientist. In 2016, he became full professor in Chinese Academy of Science in Beijing and
since2017,heisforeignexpertinChina. In2019,hebecamemanagerofOptoelectronicsInnovation
CenterinGuangzhou. HenryRadamsonisamemberofEuropeanAcademyofSciencessince2020.
Hisresearchfieldisnanomaterials,andnanodevicestowardsintegrationofelectronicsandphotonics.
He is author of two books: Monolithic Nanoscale Photonics-Electronics Integration in Silicon
andOtherGroupIVElements,Elsevier2014&CMOSpast,present,andfuture,Elsevier,2018.
Henry Radamson is a member of Executive Committee in European Material Research Society
(EMRS)wherehasalsoorganizedseveralsymposiums.
HenryRadamsonisinEditorialboardofSpringer-NatureandhehasbeenGuestEditorforthe
Nanomaterialsjournal.
HehasbeenalsoawardedseveraltimesforhisteachingeffortsbyChineseAcademyofSciences
andEuropeanacademy.
GuileiWang
GuileiWang, aprofessorattheBeijingSuperstringAcademyofMemoryTechnology. Heused
to work as a professor at the Institute of Microelectronics, Chinese Academy of Sciences. So far,
more than 120 research papers have been published in international journals. He has completed
more than 100 patents and patent applications. He has published 1 English book (Guilei Wang:
InvestigationonSiGeSelectiveEpitaxyforSourceandDrainEngineeringin22nmCMOSTechnology
Node and Beyond) and 1 SiGe epitaxy chapter. He has delivered invited talks and short courses in
severalprestigiousinternationalconferencesandacademicinstitutions.Heservedasamemberofthe
Technical Programme Committee (TPC) of the 2018 European Materials Research Society (E-MRS)
Spring Conference. He is a guest editor for Nanomaterials and reviewers for the journals. He has
won the “E-MRS Young Scientist”, “Springer Excellent Doctorate Thesis”, and “Excellent Member
of the Youth Innovation Promotion Association of the Chinese Academy of Sciences” awards. His
researchinterestsfocusonnanomaterialsformicroelectronicandsemiconductorquantumcomputing
technologies.
vii
Preface to ”Silicon Nanodevices”
Si nanodevices is a hot topic in the current technology. The start of Moore’s law and the
followingoftechnologyroadmaptoscaledownthetransistorsisoneofthemostimportantobjectives
in the semiconductor industry. As our research is proceeding towards to the unknown frontiers,
the boundary in different parts of science is emerging together. Therefore, we have chosen a
seriesofresearcharticlesinelectronicsandphotonicstohighlightthematerialsynthesisanddevice
manufacturing.
The editors would like to acknowledge valuable discussions with and material from all
the authors and the valuable supports and help from Guangdong Greater Bay Area Institute of
Integrated Circuit and System, Beijing Superstring Academy of Memory Technology, Institute of
Microelectronics,ChineseAcademyofSciences.
HenryH.RadamsonandGuileiWang
Editors
ix
