Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals

424 Pages·2014·21.25 MB·English

by  Gudrun Kissinger

Materials Science
GS
Silicon, Germanium, and Their Alloys ri
o
l
wi
c
Growth, Defects, ImpurItIes, anD nanocrystals t
ho
,
Edited by Gudrun Kissinger and Sergio Pizzini Dn
e,

f
G
“This book gives the state of the art in understanding and tailoring point e
c
defects in group IV semiconductors. The reader will find useful and com- e
t
plete information about the mechanisms of formation, migration, and sr
interaction of intrinsic and extrinsic point defects in Si, Ge, and SiGe ,m

I
alloys. This is a unique feature of this work, as it offers the possibility of m
comparing the peculiar behavior of Si, Ge, and related alloys under one pa
single cover.” un
r
—Professor Roberto Fornari, Ii
tu
Department of Physics and Earth Sciences, University of Parma, Italy I
em
s
“This book is organized well and written by experts with high international ,
reputation. … It is an excellent reference for engineers, researchers, and a,
students.” na
D
n
—Professor Deren Yang,
n
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, China ad
n
oT
Despite the vast knowledge accumulated on silicon, germanium, and their alloys,
ch
these materials still demand research, eminently in view of the improvement of r
knowledge on silicon–germanium alloys and the potentialities of silicon as a ye
substrate for high-efficiency solar cells and for compound semiconductors and si
tr
the ongoing development of nanodevices based on nanowires and nanodots. a
lA
s
Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and
l
Nanocrystals covers the entire spectrum of R&D activities in silicon, germa- l
o
nium, and their alloys, presenting the latest achievements in the field of crystal
growth, point defects, extended defects, and impurities of silicon and germanium y
nanocrystals. s
World-recognized experts are the authors of the book’s chapters, which span
bulk, thin film, and nanostructured materials growth and characterization prob-
lems, theoretical modeling, crystal defects, diffusion, and issues of key appli-
Kissinger
cative value, including chemical etching as a defect delineation technique, the
spectroscopic analysis of impurities, and the use of devices as tools for the Pizzini
measurement of materials quality.
K20303
6000 Broken Sound Parkway, NW
Suite 300, Boca Raton, FL 33487
711 Third Avenue
an informa business New York, NY 10017
2 Park Square, Milton Park
www.taylorandfrancisgroup.com Abingdon, Oxon OX14 4RN, UK
CAT#K20303 cover.indd 1 11/3/14 9:22 AM

Silicon, Germanium,
and Their Alloys
Growth, Defects, ImpurItIes,
anD nanocrystals

Silicon, Germanium,
and Their Alloys
Growth, Defects, ImpurItIes,
anD nanocrystals
Edited by
Gudrun Kissinger
Sergio Pizzini
Boca Raton London New York
CRC Press is an imprint of the
Taylor & Francis Group, an informa business
CRC Press
Taylor & Francis Group
6000 Broken Sound Parkway NW, Suite 300
Boca Raton, FL 33487-2742
© 2015 by Taylor & Francis Group, LLC
CRC Press is an imprint of Taylor & Francis Group, an Informa business
No claim to original U.S. Government works
Version Date: 20140929
International Standard Book Number-13: 978-1-4665-8665-9 (eBook - PDF)
This book contains information obtained from authentic and highly regarded sources. Reasonable efforts
have been made to publish reliable data and information, but the author and publisher cannot assume
responsibility for the validity of all materials or the consequences of their use. The authors and publishers
have attempted to trace the copyright holders of all material reproduced in this publication and apologize to
copyright holders if permission to publish in this form has not been obtained. If any copyright material has
not been acknowledged please write and let us know so we may rectify in any future reprint.
Except as permitted under U.S. Copyright Law, no part of this book may be reprinted, reproduced, transmit-
ted, or utilized in any form by any electronic, mechanical, or other means, now known or hereafter invented,
including photocopying, microfilming, and recording, or in any information storage or retrieval system,
without written permission from the publishers.
For permission to photocopy or use material electronically from this work, please access www.copyright.
com (http://www.copyright.com/) or contact the Copyright Clearance Center, Inc. (CCC), 222 Rosewood
Drive, Danvers, MA 01923, 978-750-8400. CCC is a not-for-profit organization that provides licenses and
registration for a variety of users. For organizations that have been granted a photocopy license by the CCC,
a separate system of payment has been arranged.
Trademark Notice: Product or corporate names may be trademarks or registered trademarks, and are used
only for identification and explanation without intent to infringe.
Visit the Taylor & Francis Web site at
http://www.taylorandfrancis.com
and the CRC Press Web site at
http://www.crcpress.com
To Anna
—S. P.
To Wolfgang, Dietmar, and Thomas
—G. K.

Contents
Preface.......................................................................................................................ix
Editors .......................................................................................................................xi
Contributors ...........................................................................................................xiii
Chapter 1 Modern Aspects of Czochralski and Multicrystalline Silicon
Crystal Growth .....................................................................................1
Koichi Kakimoto and Bing Gao
Chapter 2 Growth and Characterization of Silicon–Germanium Alloys ...........23
Ichiro Yonenaga
Chapter 3 Germanium on Silicon: Epitaxy and Applications ............................61
Daniel Chrastina
Chapter 4 Self-Interstitials in Silicon and Germanium ......................................87
Alexandra Carvalho and Robert Jones
Chapter 5 Vacancies in Si and Ge .....................................................................119
Eiji Kamiyama, Koji Sueoka, and Jan Vanhellemont
Chapter 6 Self- and Dopant Diffusion in Silicon, Germanium, and Their
Alloys ...............................................................................................159
Hartmut Bracht
Chapter 7 Hydrogen in Si and Ge .....................................................................217
Stefan K. Estreicher, Michael Stavola, and Jörg Weber
Chapter 8 Point Defect Complexes in Silicon ...................................................255
Edouard V. Monakhov and Bengt G. Svensson
Chapter 9 Defect Delineation in Silicon Materials by Chemical Etching
Techniques ........................................................................................289
Bernd O. Kolbesen
vii
viii Contents
Chapter 10 Investigation of Defects and Impurities in Silicon by Infrared
and Photoluminescence Spectroscopies ...........................................323
Simona Binetti and Adele Sassella
Chapter 11 Device Operation as Crystal Quality Probe .....................................353
Erich Kasper and Wogong Zhang
Chapter 12 Silicon and Germanium Nanocrystals .............................................377
Corrado Spinella and Salvo Mirabella