Silicon Carbide: Power Devices and Sensors, Volume 2

510 Pages·2009·18.807 MB·English

SiliconCarbide
Editedby
PeterFriedrichs,TsunenobuKimoto,
LotharLey,andGerhardPensl
The Editors
Peter Friedrichs is Managing Director at SiCED, a joint venture between
Siemens and Infineon located in Erlangen, Germany. SiCED develops
technologies for SiC power semiconductors and systems based on these
devices. Their research is devoted to device design and simulation, pro-
cessingtechnologyaswellasthecharacterizationofdevicesincludingalso
endoflifetests.
TsunenobuKimoto,ProfessorattheDepartmentofElectronicScienceand
EngineeringatKyotoUniversity,Japan,hasdedicatedhisworktoresearch
on the growth and characterization of wide bandgap semiconductors, the
processtechnologyandphysicsof SiCdevices.Hehasauthoredover300
scientificpublications.
Lothar Ley is recently retired as Professor of Physics and Head of the
Institute of Technical Physics at the University of Erlangen–Nürnberg,
Germany. From 2002 to 2008 he was speaker of the interdisciplinary Re-
searchUnit(DFGForschergruppe)“Siliconcarbideassemiconductormate-
rial:novelaspectsofcrystalgrowthanddoping”.Alongsideitsexperimen-
tal research on SiC, his group currently also works on Diamond, Carbon
Nanotubes,andGraphene.Hehasauthoredandco-authoredover400scien-
tificpublications.
Gerhard Pensl works with his group on the growth of SiC single
crystals for high power device applications, its electrical and optical
characterization, and on the investigation of multi-crystalline Si for solar
cells. He is Academic Director at the Institute of Applied Physics at the
University Erlangen–Nürnberg, Germany, and has authored over 300
scientificpublications.
Silicon Carbide
Volume 2: Power Devices and Sensors
Edited by
Peter Friedrichs, Tsunenobu Kimoto,
Lothar Ley, and Gerhard Pensl
WILEY-VCH Verlag GmbH & Co. KGaA
TheEditors (cid:1) AllbookspublishedbyWiley-VCHarecarefully
produced.Nevertheless,authors,editors,and
Dr.PeterFriedrichs publisherdonotwarranttheinformation
SiCEDGmbH&Co.KG containedinthesebooks,includingthisbook,to
Erlangen,Germany befreeoferrors.Readersareadvisedtokeepin
mindthatstatements,data,illustrations,
Prof.Dr.TsunenobuKimoto proceduraldetailsorotheritemsmay
KyotoUniversity inadvertentlybeinaccurate.
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Kyoto,Japan LibraryofCongressCardNo.:appliedfor
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UniversitätErlangen–Nürnberg Acataloguerecordforthisbookisavailablefrom
InstitutfürTechnischePhysik theBritishLibrary.
Erlangen,Germany
Bibliographicinformationpublishedby
Dr.GerhardPensl theDeutscheNationalbibliothek
UniversitätErlangen–Nürnberg TheDeutscheNationalbibliothekliststhis
LehrstuhlfürAngewandtePhysik publicationintheDeutscheNationalbibliografie;
Erlangen,Germany detailed bibliographicdataareavailableonthe
Internetathttp://dnb.d-nb.de.
2010WILEY-VCHVerlagGmbH&Co.KGaA,
Weinheim
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ISBN: 978-3-527-40997-6
V
Contents
Preface XI
ListofContributors XV
Volume2 SiliconCarbide:PowerDevicesandSensors
PartA ViewfromIndustry
1 Presentstatusandfutureprospectsforelectronics
inelectricvehicles/hybridelectricvehiclesandexpectations
forwide-bandgapsemiconductordevices 1
KimimoriHamada
1.1 Issuessurroundingautomobiles 1
1.2 Past,present,andfutureofToyotahybridvehicles 4
1.3 Newesthybridvehicle 10
1.4 Expectationsforwide-bandgapsemiconductorsinHVinverter
applications 12
1.5 ToyotaGroupresearchanddevelopmentonwide-bandgap
semiconductordevices 14
1.6 Conclusions 18
References 19
2 Siliconcarbidepower-deviceproducts–
Statusandupcomingchallengeswithaspecialattention
totraditional,nonmilitaryindustrialapplications 21
PeterFriedrichs
2.1 Introduction 21
2.2 SiCinpowerelectronics 22
2.3 Summary 31
References 32
SiliconCarbide,Vol.2:PowerDevicesandSensors
EditedbyPeterFriedrichs,TsunenobuKimoto,LotharLey,andGerhardPensl
Copyright©2010WILEY-VCHVerlagGmbH&Co.KGaA,Weinheim
ISBN:978-3-527-40997-6
VI Contents
PartBI UnipolarDevicesSchottkyDiodes
3 Effectofanintermediategraphitelayerontheelectronic
propertiesofmetal/SiCcontacts 35
SergeyA.Reshanov,KonstantinV.Emtsev,FlorianSpeck,
Kun-YuanGao,ThomasK.Seyller,GerhardPensl,andLotharLey
3.1 Introduction 35
3.2 Experimental 36
3.3 Results 40
3.4 Discussion 46
3.5 Conclusions 48
References 49
4 ReliabilityaspectsofSiCSchottkydiodes 51
MatthiasHolz,JochenHilsenbeck,andRolandRupp
4.1 Introduction 51
4.2 Micropipes 52
4.3 Avalancheruggednessbydesignimprovement 57
4.4 Productimprovementbyhighperformancedieattach 63
4.5 Reliabilitytestresults 67
4.6 Summary 74
References 74
PartBII JFET
5 Design,process,andperformanceofall-epitaxial
normally-offSiCJFETs 77
RajeshK.Malhan,MietekBakowski,YuuichiTakeuchi,
NaohiroSugiyama,andAdolfSchöner
5.1 Introduction 77
5.2 AdvantagesoftheSiCJFETtechnology 78
5.3 All-epitaxialnormally-offSiCDGTJFETdesign 97
5.4 Innovativedeviceprocesstechnologies 103
5.5 All-epitaxial1200Vtrench4H-SiCDGTJFET 111
5.6 Conclusion 117
References 118
Contents VII
6 Extremetemperature6H-SiCJFETintegrated
circuittechnology 121
PhilipG.Neudeck,StevenL.Garverick,DavidJ.Spry,
Liang-YuChen,GlennM.Beheim,MichaelJ.Krasowski,
andMehranMehregany
6.1 Introduction 121
6.2 Transistors 124
6.3 Circuits 134
6.4 Summary&futurework 149
References 152
7 1200VSiCvertical-channel-JFETsandcascodeswitches 157
VictorVeliadis
7.1 Introduction 157
7.2 Large-area1200V4H-SiCverticalJFETstructures 158
7.3 Investigationofthesuitabilityof1200Vnormally-off
vertical-channelSiCJFETsforpowerswitchingapplications 160
7.4 1200Vnormally-offall-SiCVJFETbasedcascodeswitch 169
7.5 Reliabilityofthe1200Vnormally-offall-SiCVJFETcascode
switch 172
7.6 ThermalpropertiesofVJFET/cascode 174
2
7.7 0.143cm active-area1200Vclassvertical-channelJFETs 181
7.8 Edgeterminationoflarge-areavertical-channelJFETs 184
7.9 Summary 187
References 189
PartBIII MOSInterfaces
8 Alternativetechniquestoreduceinterfacetraps
inn-type4H-SiCMOScapacitors 193
GerhardPensl,SvetlanaBeljakowa,ThomasFrank,KunyuanGao,
FlorianSpeck,ThomasSeyller,LotharLey,FlorinCiobanu,
ValeryAfanas’ev,AndreStesmans,TsunenobuKimoto,
andAdolfSchöner
8.1 Introduction 193
8.2 Material,processingparameters,andanalysistechniques 196
8.3 Thermaloxidationinatungstenlampfurnacecombined
withamicrowaveplasma 197
8.4 Over-oxidationofN-implanted4H-SiC 200
8.5 Over-oxidationofN-/Al-implanted4H-SiC 208
8.5.1 Materialandimplantationparameters 208
8.5.2 Resultsanddiscussion 210
8.6 Summary 212
References 213
VIII Contents
9 Highelectronmobilityachievedinn-channel4H-SiCMOSFETs
oxidizedinthepresenceofnitrogen 215
B. Zippelius, S. Beljakowa, M. Krieger, G. Pensl, S. A. Reshanov,
M.Noborio,T.Kimoto,andV.V.Afanas’ev
9.1 Introduction 215
9.2 Experimental 216
9.3 Results 217
9.4 Discussion 229
9.5 Summary 231
References 232
10 4H-SiCMISFETswithnitrogen-containinginsulators 235
MasatoNoborio,JunSuda,SvetlanaBeljakowa,
MichaelKrieger,andTsunenobuKimoto
10.1 Introduction 235
10.2 Surveyof“nitridation” 237
10.3 Devicefabrication 238
10.4 CharacteristicsofMIScapacitorsandFETson4H-SiC(0001) 240
10.5 CharacteristicsofMIScapacitorsandFETson4H-Si(0001) 250
10.6 Influenceofeffectivefixedchargedensityonchannel
mobility 253
10.7 ApplicationofN-containinginsulators top-channelMIS
capacitorsandFETs 256
10.8 SummaryofeffectsofN-Containinginsulators onn-andp-type
SiCMIScapacitorsandFETs 260
10.9 Conclusion 261
References 262
11 Inversionlayerelectrontransportin4H-SiC
metal–oxide–semiconductorfield-effecttransistors 267
VinayakTilak
11.1 Introduction 267
11.2 SiliconMOShistory 268
11.3 4H-siliconcarbideMOSmobilitycharacterization 270
11.4 Physicalcharacterizationoftheinterface 282
11.5 Differencesbetweeninversionlayerelectrontransportin
SiMOSand4H-SiCMOS 285
11.6 Futurework 286
11.7 Summary 287
References 288
Contents IX
PartC MOSFETandJFETPowerDevices
12 DevelopmentofSiCdiodes,powerMOSFETsand
intelligentpowermodules 291
TakashiNakamura,MineoMiura,NoriakiKawamoto,
YukiNakano,TakukazuOtsuka,KeijiOkumura,
andAkiraKamisawa
12.1 Introduction 291
12.2 SiCdiodes 294
12.3 SiCMOSFETs 298
12.4 SiCtrenchMOSFETs 304
12.5 SiCIPMs 310
12.6 Summary 316
References 317
13 ReliabilityissuesofSiCpowerMOSFETstoward
highjunctiontemperatureoperation 321
SatoshiTanimotoandHiromichiOhashi
13.1 Introduction 321
13.2 IssuesandmeasuresforhighTjoperation 323
13.3 Devicestructureandprocessintegration 340
13.4 Discussion 343
13.5 Conclusion 345
References 345
14 Applicationofsiliconcarbidetransistors
inphotovoltaic–inverters 347
DirkKranzerandBrunoBurger
14.1 Introduction 347
14.2 Photovoltaictrend 348
14.3 Photovoltaicsystems 349
14.4 Normally-offSiC-JFETs 353
14.5 SiC-MOSFETs 361
14.6 SiC-FETsassynchronousrectifiers 367
14.7 Singlephaseinverterwithnormally-offSiC-JFETs 372
14.8 ThreephasefullbridgeinverterwithSiC-MOSFETs 377
14.9 ProductioncostsofPV-inverters 379
14.10 FinancialbenefitswithSiC-transitors 381
14.11 Conclusionsandoutlook 383
Appendix:measurementsetup 385
References 386
X Contents
PartD BipolarDevices
15 DesignandtechnologyconsiderationsforSiCbipolardevices:
BJTs,IGBTs,andGTOs 389
Qingchun(Jon)ZhangandAnantK.Agarwal
15.1 SiCbipolarjunctiontransistors 389
15.2 SiCinsulatedgatebipolartransistors 412
15.3 SiCGateturn-offthyristors 428
15.4 TechnicalchallengesinSiCbipolardevices 440
15.5 Summary 441
References 441
16 Suppressedsurface-recombinationstructureandsurface
passivationforimprovingcurrentgainof4H-SiCBJTs 445
KenichiNonaka,AkihikoHoriuchi,YukiNegoro,
KensukeIwanaga, SeiichiYokoyama,HidekiHashimoto,
MasashiSato,YusukeMaeyama, MasaakiShimizu,
andHiroakiIwakuro
16.1 Introduction 445
16.2 SurveyoftheconventionalBJTswithhighcommonemitter
currentgain 447
16.3 BasicstructureandoperatingprincipleoftheproposedBJTs 448
16.4 Evaluationofsurfacepassivationforimprovingcurrentgain 450
16.5 DesignandfabricationoftheSSR-BJTs 454
16.6 CharacteristicsoftheSSR-BJTs 456
16.7 Conclusion 464
References 465
17 SiCavalanchephotodiodesandphotomultipliersfor
ultravioletandsolar-blindlightdetection 467
AlexeyVert,StanislavSoloviev,andPeterSandvik
17.1 Introduction 467
17.2 Siliconcarbideavalanchephotodiodes 468
17.3 InfluenceofdefectsinSiCsubstrateondeviceperformance 475
17.4 Siliconcarbidephotomultiplier 480
17.5 Summary 484
References 485
Index 487