Semiconductors — Basic Data

326 Pages·1996·9.939 MB·English

by  Prof. Dr. Otfried Madelung (auth.), Prof. Dr. Otfried Madelung (eds.)

Otfried Madelung (Editor)
Semiconductors - Basic Data
Springer
Berlin
Heidelberg
New York
Barcelona
Budapest
Hong Kong
London
Milan
Paris
Santa Clara
Singapore
Tokyo
Otfried Madelung
(Editor)
Semiconductors -
Basic Data
2nd revised Edition
With 359 Figures
Springer
Prof. Dr. Otfried Madelung
Am Kornacker 18
D-35041 Marburg
The 1St ed. was published in 2 volumes in the series "Data in Science and Technology"
under title Semiconductors.
Cataloging-in-Publication Data applied for
Die Deutsche Bibliothek -CIP-Einheitsaufnabme
Semiconductors -Basic Data / ed.: Otfried Madelung. 2.,rev. ed.
Berlin; Heidelberg; New York; Barcelona; Budapest; Hong Kong;
London; Milan; Paris; Santa Clara; Singapore; Tokyo: Springer, 1996
FrUher mehrb. begrenztesWerk u.d.T.: Semiconductors
NE: Madelung,Otfried [Hrsg.J
ISBN-13: 978-3-642-97677-3 e-ISBN-13: 978-3-642-97675-9
DOl: 10.1007/978-3-642-97675-9
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Preface
The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt-Bomstein
is impeded by the fact that merely larger libraries -often far away from the scientist's working place -can
afford such precious collections. To satisfy an urgent need of many scientists working in the field of
semiconductor physics for having at their working place a comprehensive, high quality, but cheap
collection of at least the basic data of their field of interest this volume contains the most important data
of semiconductors. All data were compiled from information on semiconductors presented on more than
6000 pages in various volumes of the New Series of Landolt-Bomstein.
We hope to meet the needs of the community of semiconductor physicists with this volume, forming a
bridge between the laboratory and additional information sources in the libraries.
Marburg, January 1996 The Editor
Table of contents
A Introduction
1 General remarks .......................................................................................................................................................... 1
2 The corresponding Landolt-Bomstein volumes .......................................................................................................... 2
3 Physical quantities tabulated in this volume ............................................................................................................... 3
B Physical data
Elements of the IVth group and IV-IV compounds
1.1 Diamond (C) ................................................................................................................................................... 5
1.2 Silicon (Si) .................................................................................................................................................... 11
1.3 Germanium (Ge) ........................................................................................................................................... 28
1.4 Grey tin (a-Sn) ............................................................................................................................................. .42
1.5 Silicon carbide (SiC) ................................................................................................................................... .47
1.6 Silicon germanium alloys (SixGel_x) ............................................................................................................ 57
2 III-V compounds
2.1 Boron nitride (BN) ...................................................................................................................................... 60
2.2 Boron phosphide (BP) ................................................................................................................................. 65
2.3 Boron arsenide (BAs) .................................................................................................................................. 68
2.4 Aluminium nitride (AIN) ............................................................................................................................. 69
2.5 Aluminium phosphide (AlP) ....................................................................................................................... 72
2.6 Aluminium arsenide (AlAs) ........................................................................................................................ 75
2.7 Aluminium antimonide (AISb) .................................................................................................................... 80
2.8 Gallium nitride (GaN) ................................................................................................................................. 86
2.9 Gallium phosphide (GaP) ............................................................................................................................ 91
2.10 Gallium arsenide (GaAs) ........................................................................................................................... 101
2.11 Gallium antimonide (GaSb ) ....................................................................................................................... 114
2.12 Indium nitride (InN) .................................................................................................................................. 122
2.13 Indium phosphide (InP) ............................................................................................................................. 124
2.14 Indium arsenide (InAs) .............................................................................................................................. 133
2.15 Indium antimonide (InSb) ......................................................................................................................... 141
2.16 Ternary and quaternary alloys between III-V compounds .......................................................................... 155
3 Elements (other than group IV elements)
3.1 Group III elements ...................................................................................................................................... 160
3.2 Group IV elements ....................................................................................................................... see chapter 1
3.3 Group V elements ....................................................................................................................................... 161
3.4 Group VI elements ...................................................................................................................................... 162
4 Binary compounds (other than III-V compounds)
4.1 IA-IB compounds ....................................................................................................................................... 164
4.2 Ix-Vy compounds ........................................................................................................................................ 164
4.2.1 I-V compounds ................................................................................................................................ 164
4.2.2 I3-V compounds ............................................................................................................................... 165
4.2.3 I2-I-V compounds ............................................................................................................................ 166
4.3 Ix-VIy compounds ....................................................................................................................................... 167
4.4 I-VII compounds ........................................................................................................................................ 170
4.5 IIx-IVy compounds ..................................................................................................................................... 173
4.5.1 IIrIV compounds ............................................................................................................................ 173
4.5.2 II-IV2 compounds ............................................................................................................................ 175
4.6 IIx-Vy compounds ...................................................................................................................................... 175
4.6.1 II3-V2 compounds ............................................................................................................................ 175
4.6.2 II4-V3 compounds ............................................................................................................................ 177
4.6.3 II-V compounds ............................................................................................................................... 177
4.6.4 II-V2 compounds ............................................................................................................................. 178
4.6.5 II-V4 compounds ............................................................................................................................. 179
4.6.6 Further II-V compounds .................................................................................................................. 179
4.7 II-VI compounds ........................................................................................................................................ 180
4.7.1 IIA-VIB compounds ........................................................................................................................ 180
4.7.2 Zinc chalcogenides .......................................................................................................................... 182
4.7.3 Cadmium cha1cogenides .................................................................................................................. 184
4.7.4 Mercury chalcogenides .................................................................................................................... 186
4.8 II -VII2 compounds ...................................................................................................................................... 188
4.9 III-V compounds ......................................................................................................................... see chapter 2
4.10 Illx-Vly compounds .................................................................................................................................... 190
4.10.1 III-VI compounds .......................................................................................................................... 190
4.10.2 III2-VI3 compounds ....................................................................................................................... 192
4.10.3 Further Illx-Vly compounds .......................................................................................................... 192
4.10.4 III-Ill-VI compounds ..................................................................................................................... 193
4.11 III-VII compounds ...................................................................................................................................... 194
4.12 IV x-Vy compounds ..................................................................................................................................... 196
4.12.1 IV -V compounds ........................................................................................................................... 196
4.12.2 IV-V2 compounds .......................................................................................................................... 197
4.13 IV x-Vly compounds .................................................................................................................................... 197
4.13.1 IV-VI compounds .......................................................................................................................... 197
4.13.2 IV-VI2 compounds ........................................................................................................................ 200
4.13.3 IV2-VI3 compounds ....................................................................................................................... 202
4.14 IV -VII2 compounds .................................................................................................................................... 203
4.15
~\~;~ ~~:~~~~1: :::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::;~~
4.16
5 Ternary compounds
5.1 Tetrahedrally bonded ternary and quasi-binary compounds ....................................................................... 209
5.1.1 1I12-VI3 compounds ......................................................................................................................... 209
5.1.2 I-III-VI2 compounds ........................................................................................................................ 211
5.1.3 II-IV-V2 compounds ........................................................................................................................ 216
5.1.4 12-IV-V3 compounds ........................................................................................................................ 219
5.1.5 12-V-VI4 compounds ........................................................................................................................ 220
5.1.6 II-Ill2-VI4 compounds ..................................................................................................................... 221
5.1.7 Other ordered vacancy compounds ................................................................................................. 224
5.1.8 Quaternary compounds .................................................................................................................... 225
5.2 Further ternary compounds ......................................................................................................................... 226
5.2.1 Ix-IVy-VIz compounds ..................................................................................................................... 226
5.2.2 Ix-Vy-VIz compounds ...................................................................................................................... 227
5.2.3 IIx-IIIy-Vlz compounds .................................................................................................................... 230
5.2.4 IIIx-Vy-VIz compounds .................................................................................................................... 231
5.2.5 IVx-Vy-Vlz compounds ................................................................................................................... 232
5.2.6 V-VI-VII compounds ...................................................................................................................... 233
5.2.7 Other ternary compounds ................................................................................................................ 235
6 Further compounds with semiconducting properties
6.1 Boron compounds ....................................................................................................................................... 237
6.2 Binary transition metal compounds ............................................................................................................ 238
6.2.1 Compounds with elements of the IVth group .................................................................................. 238
6.2.2 Compounds with elements of the Vth group ................................................................................... 238
6.2.3 Oxides .............................................................................................................................................. 239
6.2.4 Chalcogenides .................................................................................................................................. 240
6.3 Binary rare earth compounds ...................................................................................................................... 241
6.4 Ternary transition metal compounds .......................................................................................................... 242
6.4.1 Pnigochalcogenides ......................................................................................................................... 242
6.4.2 Spinels and related compounds ....................................................................................................... 242
6.4.3 Oxides .............................................................................................................................................. 243
6.4.4 Further chalcogenides ...................................................................................................................... 243
6.5 Ternary rare earth compounds .................................................................................................................... 243
7 Figures to chapters 3, 4 and 5 ................................................................................................................................. 247
Appendix
1 Index of Substances ................................................................................................................................................ 299
2 Synopsis of the sections of this book and the corresponding sections of volumes III/17, III/22 and
III123a of the New Series of Landolt-Bornstein ................................................................................................ 307
3 Contents of the volumes of the New Series of Landolt-Bornstein dealing with semiconductors ........................... 311
A Introduction
1 General remarks
This volume contains basic data of semiconductors. All data were compiled from volumes of the New Series of the
Landolt-Bomstein data handbook. They comprise the information a scientist working on semiconductors is needing
in his every-day work.
The volume consists of three parts: A. Introduction, B. Physical data, C. Appendix.
In part B the chapters 1 and 2 cover data on the most important semiconductors, the elements of the IVth group and
the III-V compounds. Here detailed information is given on all physical properties of these substance groups.
Chapters 3 to 7 present basic data on more than 600 other substances with semiconducting properties. The scope and
the arrangement of data is as follows:
Chapters 1 and 2 on group IV elements and III-V compounds
The data presented in these chapters are ordered under the following headings:
- Electronic properties:
band structure / energies at symmetry points of the band structure / energy gaps (direct energy gap, indirect energy
gap) / exciton energies / intra conduction band energies / intra valence band energies / critical point energies / spin
orbit splitting energies / camel's back structure of the conduction band edge / structure of the top of the valence
band / effective masses (effective masses, electrons; effective masses, holes) / g-factor of electrons / valence band
parameters.
- Lattice properties:
structure / high pressure phases / transItIOn temperature (pressure) or decomposition temperature / lattice
parameters / linear thermal expansion coefficient / density / melting point / phonon dispersion relations / phonon
frequencies (wavenumbers) / second order elastic moduli / third order elastic moduli.
- Transport properties:
electrical conductivity (intrinsic conductivity) / (intrinsic) carrier concentration / carrier mobilities (electron
mobility, hole mobility) / thermal conductivity (resistivity).
- Optical properties:
optical constants / absorption coefficient / reflectance / extinction coefficient / refractive index / dielectric
constants.
- Impurities and defects:
solubility of impurities / diffusion coefficient (self-diffusion, impurity diffusion) / binding energies of (shallow)
impurities / energy levels of impurities, defects and complexes or of deep centers.
For alloys bowing parameters and crossover concentrations are also given.
Chapters 3 to 7 on further semiconducting elements and compounds
To cover the properties of more than 600 semiconductors several restrictions were necessary:
- Only diagrams showing lattice structures and band structures have been included. Thus, no temperature or pressure
dependence of parameters, no optical spectra etc. could be presented. Most data are values at room temperature and
normal pressure.
- No references have been given. For all references as well as for all supplementary information (experimental
conditions, experimental method, further data, errors etc.) the reader has to consult the respective subvolumes of
volumes NS IIIIl7 and 22 of Landolt-Bomstein (see below).
- For technical reasons the figures to chapters 3 ... 5 are presented in chapter 7.
In Chapters 3, 4 and 5 all data have been grouped into eight colums:
- Substance: The name of the semiconducting substance.
- Structure: symmetry type of the lattice and space group for normal conditions.
Further information about the locations of atoms in the unit cell, about high temperature phases or high pressure
phases have been omitted.
- Static and dynamical lattice parameters:
2 Introduction
Lattice constants. Density, melting temperature (in some cases peritectic temperature). Data on second order elastic
constants have been added in simple cases only where the elastic properties are determined by a small number of
tensor components. Dielectric constants. Phonon frequencies are given only if the phonon spectrum is
characterized by a small number of frequencies e.g. TO and LO modes at the center of the Brillouin zone or some
infrared active or Raman-active modes. For complicated phonon spectra no data are given.
- Band structure parameters: Energy gaps. Data were given here mostly for room temperature, but characteristic data
at other temperatures were added if necessary. If possible the type of the transition (optical, thermal, direct,
indirect etc.) has been indicated. Effective masses of electrons and holes, polaron masses.
- Transport properties: In most cases only the mobilities are listed. Since such data represent upper limits or are
accidentally measured values carrier densities or conductivities (resistivities) have been added when necessary.
Activation energies for conductivity have been included in some cases.
In Chapter 6 data on compounds are listed, for which the information on semiconducting properties is scarce, or for
which semi conductivity is only of minor importance. In this chapter the tables have been restricted to six col urns
giving information on structure, optical and thermal energy gaps and carrier mobilities. Here activation energies for
conductivity have been indicated, if this was stated explicitely in the original paper. In many cases the references do
not differentiate between thermal energy gaps and activation energies.
The following restrictions should be taken in mind when using these tables:
- If not stated otherwise all data are room temperature values. Only for parameters which do not depend strongly on
temperature (e.g. effective masses) data measured at other temperatures were included without mentioning it.
- Physical data can be judged confidentally only by added information about measuring and evaluation methods,
about the reference the value has been taken from etc. All this valuable information is lacking here because of the
restriction of the number of pages for this data collection. The reader has to go back to the corresponding Landolt
Bornstein volumes for such information. Adding such informations in the present text - and the references to the
original papers too -had surpassed the frame of this volume.
- The data presented here had often to be chosen from several values, given in the Landolt-Bornstein volumes, if no
unique choice had been possible for the author of the respective chapter. In such cases the "most reliable one" -
according to the judgement of the editor -or the "newest" one has been listed.
Appendices
To facilitate the use of this book three Appendices have been added: 1. Index of Substances, 2. Synopsis of the
sections of this book and the corresponding sections of volumes IIIIl7 and III/22 of the New Series of Landolt
Bornstein, 3. Lists of Contents of the volumes of the New Series of Landolt-Bornstein dealing with semiconductors.
2 The corresponding Landolt-Bornstein volumes
Although the most relevant data have been summarized here the respective volumes of the New Series of Landolt
Bornstein contain much more information about these topics. In addition data on other properties can be found on the
more than 6 000 pages of volumes 17a ... i, 22a,b and 23a of Group III of the New Series:
Volume III/17a (and its supplement and extension III/22a) present data on group IV elements and III-V compounds.
Additional information is given on topics as temperature and pressure dependence of energy band parameters, critical
point energies, Kane and Luttinger band structure parameters, exciton parameters and deformation potentials;
temperature and pressure dependence of lattice parameters, Debye temperatures, sound velocities, bulk modulus,
Griineisen parameters; carrier concentrations, drift velocities, galvanomagnetic, thermomagnetic and thermoelectric
coefficients; optical constants and spectra, elasto- and piezooptic coefficients, Raman spectra; magnetic
susceptibility, heat capacity, thermodynamical data and many other topics.
Volume IIII22b is devoted to an extensive representation of all relevant data on impurities and defects in group IV
and III-V semiconductors as solubilities and segregation constants, diffusion coefficients, shallow defect levels, deep
defects and impurities, luminescence data, ESR and ENDOR data, local vibrational modes.
In addition to these physical data the volumes III/17c and d concentrate on technological data of the group IV, III-V
and some other semiconductors. The volumes III1l7b, e ... h present data on elements other than group IV elements
and on binary, ternary and polynary semiconductors. Volume III/17i adds data on amorphous and organic
semiconductors as well as on some special topics.
Chapter 2.1 of volume IIII23a presents photoemission spectra and related band structure and core level data of
tetrahedrally bonded semiconductors.
The organization and tables of contents of these volumes are described in the Appendix.