Table Of ContentSSeemmiiccoonndduuccttoorr DDeevviiccee RReelliiaabbiilliittyy
NATO ASI Series
Advanced Science Institutes Series
A Series presenting the results of activities sponsored by the NA TO Science Committee,
which aims at the dissemination of advanced scientific and technological knowledge,
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and Physical Sciences Dordrecht, Boston and London
o
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Series E: Applied Sciences -Vol. 175
Semiconductor Device
Reliability
edited by
A. Christou
Surface Physics Branch,
Naval Research Laboratory,
Washington, D.C., U.S.A.
and
B. A. Unger
Bell Communications Research,
Red Bank, N.J., U.S.A.
Kluwer Academic Publishers
Dordrecht / Boston / London
Published in cooperation with NATO Scientific Affairs Division
Proceedings of the NATO Advanced Research Workshop on
Semiconductor Device Reliability
Heraklio, Crete, Greece
June 4-9, 1989
Library of Congress Cataloging In Publication Data
NATO Advanced Research Workshop on Semiconductor Device
Reliability (1989 : Herakleion, Greece)
Semiconductor device reliability.
(NATO ASI series. Series E: Applied sciences ; vol.
175)
"Published in cooperation with NATO Scientific Affairs
Division."
1. Semiconductors--Reliability--Congress. I. Christou
A. II. Unger, B. A. III. Title. IV. Series: NATO
A.'SI series. Series E, Applied sciences no. 175.
TK7871.85.N3758 1989 621.381'52 89-24589
ISBN-13: 978-94-010-7620-3 e-ISBN-13: 978-94-009-2482-6
DOl: 10.1007/978-94-009-2482-6
Published by Kluwer Academic Publishers,
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TABLE OF CONTENTS
PREFACE
CHAPTER I. RELIABILITY TESTING
1.1 The Influence of Temperature and Use Conditions on the
Degradation of LED Parameters
R. Goarin. J.P. Defars. M. Robinet. P. Durand and
B. Bauduin (CNET. France)
1.2 An Historical Perspective of GaAs MESFET Reliability Work
at Plessey 29
James Turner and R Conlon
(plessey Research Caswell Ltd .• U.K.)
1.3 Screening and Bum-In: Application to Optoelectronic Device
Selection for High-Reliability S280 Optical Submarine Repeaters 43
M. Gucguen. J.L. Boussois. J.L. Goudlard and S. Sauvage
(Alcatel CIT. France)
1.4 Assuring the Reliability of Lasers Intended for the Uncontrolled
Environment 75
J.L. Spcncer (Bellcore. U.S.A.)
1.5 Component Bum-In: The Changing Attitude 97
F. Jensen (The Engineering Academy of Denmark)
CHAPTER II. RELIABILITY MODELS AND FAILURE MECHANISMS
2.1 Statistical Models for Device Reliability; An Overview 107
J. M¢1toft (The Engineering Academy of Denmark)
2.2 Computer-Aided Analysis of Integrated Circuit Reliability 127
P. Mauri (SGS-Thomson Microelectronics. Italy)
2.3 Reliability Asscssment of CMOS ASIC Designs 137
M.S. Davies (University of Leeds. U.K.) and
P.D.T. O'Connor (Britisch Aerospace DynamiCS Group, U.K.)
2.4 Models Used in Undersea Fibre Optic Systems Reliability
Prediction 147
RH. Murphy (STC Submarine Systems. U.K.)
CHAPTER III. FAILURE ANALYSIS
3.l. Failure Analysis: The Challenge 161
RG. Taylor and I.A. Hughes (British Telecom, U.K.)
vi
3.2 Gate Metallisation Systems for High Reliability GaAs MESFET
Transistors 177
D.V. Morgan (College of Cardiff, U.K.) and
J. Wood (University of York, U.K.)
3.3 Reliability Limitations of Metal Electrodes on GaAs 197
H.L. Hartnagel (Institut fur Hochfrequenztechnik, F.R.G.)
3.4 Failure Mechanisms of GaAs MESFETs and Low-Noise
HEMTs 211
F. Magistrali (Telettra S.p.A., Italy),
C. Tedesco and E. Zanoni (Univcrsita' di Padova, Italy)
3.5 Metal Contact Degradation on III-V Compound Semiconductors 269
G. Kiriakidis (Research Center of Crete/FORTH, Greece)
W.T. Anderson (Navel Research Laboratory, U.S.A.)
z. Hatzopoulos, C. Michelakis (Research Center of Crete/
FORTH, Greece) and
D.V. Morgan (University of Wales, College of Cardiff, U.K.)
3.6 Nuclear Methods in the Characterization of Semiconductor
Reliability 291
J.C. Soares (Centro de Ffsica Nuclear da Universidade de
Lisboa, Portugal)
CHAPTER IV. OPTO-ELECTRONIC RELIABILITY (I)
4.1 A Review of the Reliability of III-V Opto-electronic Components 301
S.P. Sim (British Telecom Research Laboratories, U.K.)
4.2 Considerations on the Degradation of DFB Lasers 321
T. Ikegami, M. Fukuda and M. Suzuki
(NTT Opto-electronics Laboratories, Japan)
4.3 InP-Based 4 x4 Optical Switch Package Qualification and
Reliability 329
K. Mizuishi, T. Kato, H. Inoue and H. Ishida
(Hitachi Ltd., Japan)
4.4 Modelling the Effects of Degradation on the Spectral Stability of
Distributed Feedback Lasers 343
A.R. Goodwin, J.E.A. Whiteaway
(STC Technology Ltd., U.K.) and
R.H. Murphy (STC Submarine Systems Ltd., U.K.)
vii
CHAPTER V. OPTO-ELECTRONIC RELIABILITY (II)
5.1 Optoelectronic Component Reliability and Failure Analysis 353
P. Montangero (CSELT, Italy)
5.2 Temperature Cycling Tests of Laser Modules 363
P. Su and B.A. Unger (Bellcore, U.S.A.)
5.3 An Experimental and Theoretical Investigation of Degradation in
Semiconductor Lasers Resulting from Electrostatic Discharge 379
L.F. Dechiaro, C.D. Brick-Rodriguez and R.G. Chemelli
(Bell Communications Research, U.S.A.)
J.W. Krupsky (South Central Bell, U.S.A.)
5.4 Reliability Testing of Planar InGaAs Avalanche Photodiodes 413
M. Kobayashi and T. Kaneda (Fujitsu Ltd., Japan)
CHAPTER VI. COMPOUND SEMICONDUCTOR RELIABILITY
6.1 Status of Compound Semiconductor Device Reliability 423
W.T. Anderson and A. Christou
(Naval Research Laboratory, U.S.A.)
6.2. Investigation into Molecular Beam Epitaxy-Grown FETs
andHEMTs 439
S. Mottet and J.M. Dumas (Centre National d'Etudes
des Telecomunications, France)
6.3 Reliability of GaAs MESFETs 455
B. Ricco (University of Bologna, Italy),
F. Fantini (S.S.S.U.P.S. Anna, Italy),
F. Magistrali and P. Brambila (Teletlra Spa, Italy)
6.4 Hydrogen Effects on Reliability of GaAs MMICs 471
W.O. Camp, Jr., R. Lasater, V. Genova and R. Hume
(IBM Systems Integration Division, U.S.A.)
6.5 Temperature Distribution on GaAs MESFETs: Thennal
Modeling and Experimental Results 479
G. Clerico Titinet and P.M. Scalafiolli (CSELT, Italy)
CHAPTER VII. HIGH-SPEED CIRCUIT RELIABILITY
7.1 High Speed IC Reliability: Concerns and Advances 491
A.A. Iliadis (EO.R.T.H./University of Maryland, U.S.A.)
viii
7.2 Reliability of short channel silicon SOl VLSI
Devices and Circuits 507
D.E. Ioannou (University of Maryland, U.S.A.)
7.3 Special Reliability Issues and Radiation Effects of
High Speed ICs 517
G.I. Papaioannou (University of Athens, Greece)
7.4 Reliability of High Speed HEMT Integrated Circuits and
Multi-2DEG Structures 545
A. Christou (Foundation of Research and Technology
Hellas, Greece)
7.5 AlGaAs as a Dielectric on GaAs for Digital IC'S: Problems and
Solutions 557
W.T. Masselink (IBM T.J. Watson Research Center, U.S.A.)
APPENDIX A. RELIABILITY STRESS SCREENING 569
F. Jensen (Leader), W.E. Camp, R. Murphy and R. Goarin
APPENDIX B. LIFETIME EXTRAPOLATION AND STANDARDIZATION OF TESTS 571
A. Christou (Leader), J. Mfi)ltoft, P.D.T. O'Connor,
W.T. Anderson and P. Mauri
INDEX 573
PREFACE
This publication is a compilation of papers presented at the Semiconductor Device Reliabi
lity Workshop sponsored by the NATO International Scientific Exchange Program. The
Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the
Workshop was to review and to further explore advances in the field of semiconductor
reliability through invited paper presentations and discussions. The technical emphasis was
on quality assurance and reliability of optoelectronic and high speed semiconductor
devices.
The primary support for the meeting was provided by the Scientific Affairs Division of
NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin
isters this program.
The chapters of this book follow the format and order of the sessions of the meeting.
Thirty-six papers were presented and discussed during the five-day Workshop. In addi
tion, two panel sessions were held, with audience participation, where the particularly
controversial topics of bum-in and reliability modeling and prediction methods were dis
cussed. A brief review of these sessions is presented in this book.
The success of any conference, but particularly one with a small attendance, depends not
only on the technical content and preparation of each paper and presentation, but also on the
willingness of each participant to share and socialize data and experiences and to contribute
to the technical discussions. In this regard, the Semiconductor Device Reliability
Workshop was a stellar example with each participant contributing freely and profession
ally and presenting papers of considerable merit. The co-directors wish to acknowledge
this and thank the attendees for contributing to a splendid week of technical exchange.
It is also a pleasure to acknowledge the Organizing Committee consisting of Professor J.
Mf/lltoft, Dr. G. Kiriakidis and the co-directors. This Committee planned the Workshop:
set the format, the program, and the activities of the Workshop. We are also indebted to
Dr. G. Kiriakidis for taking care of all the conference and attendee hotel arrangements as
well as handling all the operational details during the meeting. He was ably assisted at the
meeting by Ms. Lia Papadoulau and Ms. Georgia Papadaki. We also acknowledge the
secretarial help of Mrs. Mary Daley, who did a splendid job of maintaining order during the
planning phase of the meeting and assisting in the preparation of this publication.
And finally a word about the conference. Reliability and quality have become buzz words
in our society. The Japanese emphasis on R&Q and demonstrated performance in this
area, with the attendant economic benefits, have raised the importance of reliability and
quality in all areas of technology. R&Q attributes have become an important part of any
sales program, commanding considerable emphasis in sales literature. Indeed, we believe
that, in general, product R&Q has improved, even as the products, particularly electronic
products, have become more complex. This conference focused on the R&Q of devices to
be incorporated in the next generation of electronic and communications products. It was
one of the few platforms solely dedicated to the discussion of R&Q of optoelectronic and
GaAs circuitry. R&Q emphasis on new emerging technologies at meetings such as this
will help to continue this trend toward improved reliability and quality of the next
generation of solid state electronics.
Dr. A. Christou
Dr. B.A. Unger
ix
THE INFLUENCE OF TEMPERATURE AND USE CONDITIONS ON THE
DEGRADATION OF LED PARAMETERS
R. GOARIN, J.P. DEFARS, M. ROBINET, P. DURAND, B. BAUDUIN
C.N.E.T.
Departement lABjIFEjCOD
BP40
22300 Lannion
France
ABSTRACT. This paper is intended to illustrate the quality and reliability of optoelectronic devices.
Limited exemples to LED indicate how laboratory tests can be used for preparing component
specifications.
The usefulness of burn-in and screening procedures is indicated based on real experience. The
importance of technology and manufacturer is presented. The quality and reliability of devices based
on failure analysis are often more related to external causes than due to intrinsic reliability of the
semiconductor.
1. Introduction
A long experience has been obtained on LED components tested in CNET laboratories showing the
contribution of temperature and current on the degradation of optical power. A good correlation
between the variations at different conditions has been observed. The Paper gives the results of the
evolution of diodes over more than 3 years duration. Those results were very useful to decide on the
choice of components for the broadband network installed by FRANCE TELECOM. Several ten
thousands of LEDs are now under operation corresponding to excellent reliability results compared to
results obtained from lasers.
The observation of individual variations for devices from different manufacturers can be used to
evaluate the degradation and extrapolate the behaviour for a long term duration. A position
concerning burn-in and screening can be derived, showing that no general philosophy or strategy can
be the rule, due to improvement of technology and based on different failure mechanisms.
Investigation on available components and also previous experience on the evolution of optocouplers
was a good base to undertake laboratory tests.
The development in France of optical broadband network using optical fibers at a reasonnable cost
was only possible if cheap and reliable optical components were available which was not the case in
the Biarritz experience.
Due to the fact that a subscriber uses less than 1 kilometer of optical fiber, LED for emission was the
best solution combined with multimode fibers. In order to share the fiber using wavelength
A. Christou and B. A. Unger (eds.), Semiconductor Device Reliability, 1-28.
© 1990 Kluwer Academic Publishers.
