Table Of Content19
Springer Series in Chemical Physics
Edited by Robert Gomer
~----------------------------~
Springer Series in Chemical Physics
Editors: V. I. Goldanskii R. Gomer F. P. Schafer 1. P. Toennies
Volume I Atomic Spectra and Radiative Transitions By I. I. Sobelman
Volume 2 Surface Crystallography by LEED Theory, Computation
and Structural Results By M. A. Van Hove, S. Y. Tong
Volume 3 Advances in Laser Chemistry Editor: A. H. Zewail
Volume 4 Picosecond Phenomena Editors: C. V. Shank, E. P. Ippen, S. 1. Shapiro
Volume 5 Laser Spectroscopy Basic Concepts and Instrumentation By W. Demtrtider
Volume 6 Laser-Induced Processes in Molecules Physics and Chemistry
Editors: K 1. Kompa, S. D. Smith
Volume 7 Excitation of Atoms and Broadening of Spectral Lines
By I. I. Sobelman, 1. A. Vainshtein, E. A. Yukov
Volume 8 Spin Exchange Principles and Applications in
Chemistry and Biology By Yu. N. Molin, K M. Salikhov, K I. Zamaraev
Volume 9 Secondary Ion Mass Spectrometry SIMS n Editors: A. Benninghoven,
C. A. Evans, Jr., R. A. Powell, R. Shimizu, H. A. Storms
Volume 10 Lasers and Chemical Change
By A. Ben-Shaul, Y. Haas, K 1. Kompa, R. D. Levine
Volume 11 Liquid Crystals of One-and Two-Dimensional Order
Editors: W. Helfrich, G. Heppke
Volume 12 Gasdynamic Laser By S. A. Losev
Volume 13 Atomic Many-Body Theory By I. Lindgren, J. Morrison
Volume 14 Picosecond Phenomena II Editors: R Hochstrasser, W. Kaiser, C. V. Shank
Volume 15 Vibrational Spectroscopy of Adsorbates Editor: R F. Willis
Volume 16 Spectroscopy of Molecular Excitons By V.1. Broude, E.I. Rashba, E. F. Sheka
Volume 17 Inelastic Particle-Surface Collisions Editors: E. Taglauer, W. Heiland
Volume 18 Modelling of Chemical Reaction Systems
Editors: K H. Ebert, P. Deuflhard, W. Jiiger
Volume 19 Secondary Ion Mass Spectrometry SIMS m
Editors: A. Benninghoven, J. Giber, J. Laszlo, M. Riedel, H. W. Werner
Volume 20 Chemistry and Physics of Solid Surfaces IV
Editors: R. Vanselow, R Howe
Secondary Ion
Mass Spectrometry
SIMS III
Proceedings of the Third International
Conference,
Technical University, Budapest, Hungary,
August 30-September 5, 1981
Editors:
A. Benninghoven 1. Giber 1. Laszl6
M. Riedel H.W. Werner
With 289 Figures
Springer-Verlag Berlin Heidelberg New York 1982
Professor Dr. A. Benninghoven Dr. M. Riedel
Physikalisches Institut der Unjllf'I~itiit Munster Department of Physical Chemistry and
D-4400 Munster, Fed. Rep. of Germany Radiology, EOtvos University
H -llIl Budapest, Hungary
Professor Dr. 1. Giber,
1. Laszlo Dr. H.W. Werner
Physical Institute of the Technical University Philihs Research Laboratories, Eindhoven
H-llIl Budapest, Hungary The Netherlands
International Organizing Committee:A. Benninghoven (Chairman), V.T. Cherepin, c.A.
Evans, Jr., KF.J. Heinrich, 1. Okano, G. Slodzian, H. W. Werner
Local Organizing Committee: 1. Giber, 1. Laszlo, M. Riedel, A. Solyom, V. Mesterhazy
Physical Institute of the Technical University Budapest, Budafoki ut 8,
H-Illl Budapest, Hungary
Sponsored by: Hungarian Academy of Sciences, Ministry of Culture and Education of
Hungary, Technical University of Budapest, European Physical Society,
Lorand Eotvos Physical Society
Series Editors
Professor Vitalii I. Goldanskii Professor Dr. Fritz Peter Schafer
Institute of Chemical Physics Max-Planck-Institut fUr
Academy of Sciences Biophysikalische Chemie
Vorobyevskoye Chaussee 2-b D-3400 Gottingen-Nikolausberg
Moscow V-334, USSR Fed. Rep. of Germany
Professor Robert Gomer Professor Dr. J. Peter Toennies
The James Franck Institute Max-Planck-Institut fUr Stromungsforschung
The University of Chicago BottingerstraBe 6-8
5640 Ellis Avenue D-3400 Gottingen
Chicago, IL 60637, USA Fed. Rep. of Germany
ISBN 978-3-642-88154-1 ISBN 978-3-642-88152-7 (eBook)
DOI 10.1007/978-3-642-88152-7
This work is subject to copyright. All rights are reserved, whether the whole or part of the material is
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© by Springer-Verlag Berlin Heidelberg 1982
Softcover reprint of the hardcover 1st edition 1982
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therefore free for general use.
2153/3130-543210
Preface
Following the biannual meetings in MUnster (1977) and Stanford (1979) the
Third International Conference on Secondary Ion Mass Spectroscopy was held
in Budapest from August 31 to September 5, 1981. The Conference was attended
by about 250 participants. The success of the 1981 Conference in Budapest
was especially due to the excellent preparation and organization by the
Local Organizing Committee. We would also like to acknowledge the generous
hospitality and cooperation of the Hungarian Academy of Sciences. Japan was
chosen to be the location for the next conference in 1983.
SIMS conferences are devoted to two main issues: improving the application
of SIMS in different and especially new fields, and understanding the ion
formation process. Needless to say, there is a very strong interaction be
tween these two issues.
The major reason for the rapid increase in SIMS activities in the last
few years is the fact that SIMS is a powerful tool for bulk, thin-film, and
surface analysis. Today it is extensively and successfully applied in such
different fields as depth profiling and imaging of semiconductor devices, in
isotope analysis of minerals, in imaging biological tissues, in the study of
catalysts and catalytic reactions, in oxide-layer analysis on metals in drug
detection, and in the analysis of body fluids.
Yet in spite of these successful applications of SIMS, the ion formation
process remains the central question. Up to now we still know very little
about the fundamental processes which result in the emission of a charged
atomic or molecular particle from an ion-bombarded surface. Thus the present
situation may be summarized by the assessmant that we have succeeded in de
veloping an excellent and powerful analytical technique, but based upon pro
cesses that are not sufficiently understood.
This volume contains almost all of the invited and contributed papers
presented at the Conference. The contributions are arranged following the
sections of the Conference program. All papers included in this volume were
reviewed at the Conference. The final responsibility for the manuscripts,
however, is with the authors only. For technical editorial work we thank
Dr.!. Barsony, t4r. Z. Soha and Z. Pakh.
~1rs.
The editiors hope that this volume will help those who could not partici
pate in the meeting become familiar with the recent developments and activi
ties in the field of secondary ion mass spectrometry.
Budapest, Hungary A. Benninghoven
December, 1981 J. Giber . J. Lasz Zb
M. RiedeZ· H. W. Werner
v
Contents
Part I. Instrumentation
*Instrumental Aspects of Spatially 3-Dimensional SIMS Analysis
By F.G. RUdenauer ................................................. 2
*Some Problems of Construction Implied by Requirements of Up-To-Date
SIMS Instrumentation. By R.L. Gerlach ..... ........................ 22
Description and Applications of a New Design Cs+ Ion Source on the
COALA Ion Microprobe for Negative Ion SIMS
By B.L. Bentz and H. Liebl ........................................ 30
Operational Data of a Simple Microfocus Gun Using an EHD-Type Indium
Ion Source. By M.J. Higatsberger, P. Pollinger, H. Studnicka,
and F. G. RUdenauer .........................................•...... 38
First Results on a Scanning Ion Microprobe Equipped with an EHD-Type
Indium Primary Ion Source. By F.G. RUdenauer, P. Pollinger,
H. Studnicka, H. Gnaser, W. Steiger, and M.J. Higatsberger ........ 43
Simple Double-Channel SIMS Instrument
By V.T. Cherepin, I.N. Dubinsky, and Ya.Ya. Dyad'kin 49
Principles and Applications of a Dual Primary Ion Source and Mass
Filter for an Ion Microanalyser. By J.J. Le Goux and H.N. Migeon 52
A Quadrupole Mass Spectrometer with Energy Filtering for SIMS Studies
By R.-L. Inglebert and J.-F. Hennequin ............................ 57
Development and Operation of Special SIMS-Equipment for Use in Iron
and Steel Analysis. By J. Dittmann ................................ 61
*Design Concept of a New Secondary Ion Optics System for Use with
Quadrupole Mass Spectrometers
By R. Jede, O. Ganschow, and A. Benninghoven ...................... 66
Improved Analysis of Insulators in an ARL IMMA Using Positive Primary
Ions and an Electron Gun. By J.D. Brown and D.J. Gras ............. 72
Performance and Use of Dissector Ion Microanalyzer
By V.T. Cherepin and V.L. 01 'khovsky .............................. 77
*Invited paper
VII
Distortion of Secondary Ion Extraction Due to Sample Surface
Irregularities. By W. Bedrich, B. Koch, H. Mai, U. Seidenkranz,
H. Syhre, and R. Voigtmann ........................................ 81
A Combined Direct Imaging Laser Ionization Secondary Ionization
Mass Spectrometer. By B.K. Furman and C.A. Evans, Jr. ............. 88
Advances in Ion Probes A-DIDA. By H. Frenzel and J.L. Maul 94
A Novel Ion Etching Unit Applicable for Depth Profiling with SIMS
and IIR. By K.H. Guenther, E. Hauser, G. Hobi, P.G. Wierer, and
E. Brandstaetter .................................................. 97
Improvements and Applications of the Riber MIQ 156
By F. Simondet and D. Kubicki ..................................... 102
Part II. Fundamentals I. Ion Formation
*Molecule Formation in Oxide Sputtering. By H. Oechsner 106
*Dependence of Ionization Yields Upon Elemental Composition; Isotopic
Variations. By G. Slodzian ........................................ 115
Measurements of the Energy Distributions of Positive Secondary Ions
in the Energy Range from 0 to About 500 eV
By C. Pahlke, H. DUsterheft, and U. MUller-Jahreis ................ 124
Ion Dose Effects in Static SIMS
By W. Speckmann, S. Prigge, and E. Bauer .......................... 128
Current Density Effects on Secondary Ion Emission from Multicomponent
Targets. By A. Barcz, M. Domanski, and B. Wojtowicz-Natanson 134
Isotope Effect in Secondary Ion Emission
By J.C. Lorin, A. Havette, and G. Slodzian 140
Caesiated Surfaces and Negative Ion Emission
By M. Bernheim and G. Slodzian .................................... 151
Secondary Ion Mass Spectrometry of Organic Compounds; A Comparison
with Other Methods (EI, CI, Fl, FD, FAB). By K.D. Kleppel ......... 159
Secondary Ion Emission from NbV-Alloys
By J. Schou, G. Flentje, W.O. Hofer, and U. Linke 165
Part I fl. Fundamentals II. Depth Profiling
*Depth Profiling by SIMS: Depth Resolution, Dynamic Range and
Sensitivity. By C.W. Magee, R.E. Honig, and C.A. Evans, Jr. 172
*Disturbing Effects in Sputter Profiling. By S. Hofmann 186
*The Theory of Concentration Depth Profiling by Sputter Etching
By W.O. Hofer and U. Littmark ..................................... 201
VIII
Surface Topography Development During SIMS Investigations and Using
it to Get Additional Information on Polycrystalline and
Heterogeneous Solids. By W. Hauffe ............................•... 206
Sputtering of Metals with 20 keV O~; Characteristic Etch Patterns,
Sputtered Atom Yields and Secondary Ion Mass Spectra
By K. Tsunoyama, T. Suzuki, Y. Ohashi, and M. Konishi ............. 211
Depth Resolution of Ion Bombardment Technique Applied to NiPd, PiPt, PtPd
Thin Layer Systems. By J. Giber, D. Marton, J. Laszlo, and 1. r·1izsei 216
The Influence of Ion Bombardment on the Results of AES-Depth Profiling
on Sil icides. By Th. Wirth ........................................ 222
A Study of Secondary Ion Energy Distributions During Sputtering of
MIS Layer Structures. By G.Ph. Romanova, P.I. Didenko,
A.A. Yefremov, V.G. Litovchenko, and R.1. Marchenko .........•..... 227
Structural Effects in SIMS at the Depth Profiling of Boron Implanted
Silicon. By V.T. Cherepin, A.K. Kosyachkov, A.D. Krasyuk, and
M.A. Vasil iev •.................................................... 233
Comparison of Compositional Thin Film Depth Profiling Obtained by
SIMS, IIR and AES. By E. Hauser, G. Hobi, K.H. Guenther, and
E. Brandstaetter •................................................ , 238
Part IV. Quantification
*Quantification of SIMS. By G.H. Morrison ............................. 244
Quantitative Chemical Analysis of Standard Iron Alloys by SIMS
Technique. By Z. Jurela ........................................... 257
Application of the LTE Model to Quantifying the Secondary Ion Spectra
of Steels. By J. Suba and A. Stopka ............................... 264
Modification of the MISR Method with the Use of Implantation of
Standard Elements. By J. Giber, A. S6lyom, L. Bori, and J. Gyulai 269
Use of Ionic Implantation f,or Quantification of SIMS Analysis in
Metals and Oxides - Application to Corrosion Studies
By J.C. Pivin, D. Loison, C. Roques-Carmes, J. Chaumont,
A.M. Huber, and G. Morillot ....................................... 274
Secondary Ion Emission from Binary and Ternary Amorphous Alloys
By H. Gnaser, M. Riedel, J. Marton, and F.G. RUdenauer ............ 282
Experimental Procedures for Quantitative Analysis of Silicate
Minerals. By A. Havette and G. Slodzian ....................•..•... 288
SIMS Isotopic Measurements at High Mass Resolution
By E. Zinner and M. Grasserbauer .................................. 292
Computer Peak Identification and Evaluation of SIMS Spectra
By J. Antal, S. Kugler, and M. Riedel ............................. 297
IX
Part V. Application I. Depth Profiling
Depth Profiling of Copper Atoms Gettered in Ion-Damaged GaP
By M. Griepentrog, H. Kerkow, H. Klose, and U. MUller-Jahreis 302
The Optimisation of SIMS for the Analysis of Semiconductor Materials
By J.B. Clegg ..................................................... 308
Impurity Redistrfbution in GaAs Epilayers. By A.M. Huber, G. Morillot,
P. Merenda, M. Bonnet, and G. Bessonneau .......................... 314
Quantitative Distribution Analysis of B, As and P in Si for Process
Simulation. By M. Grasserbauer, G. Stingeder, E. Guerrero,
H. Potzl, R. Tielert, and H. Ryssel ............................... 321
High Spatial Resolution SIMS Depth Profiling of Cr Dopant in CdSe
Thin Film Transistors
By J.D. Brown, F.R. Shepherd, and W.D. Westwood •............•..... 330
SIMS Investigation of p-n Junction Quality in Ion Implanted cw Laser
Annealed Silicon
By M. Maier, D. Bimberg, H. Baumgart, and F. Phillipp ............. 336
Profiles·of Implanted or Diffused Dopants (Be, Zn, Cr, Se) in Indium
Phosphide. By M. Gauneau, A. Rupert, and P.N. Favennec ••.......... 342
Applications of SIMS in Studies of Slow Diffusion and Isotope
Diffusion. By A. Lodding, H. Odelius, and U. Sodervall ............ 351
Rapid Diffusion and Gettering Studies of Bulk Oxygen in Silicon by
Cs/SIMS. By C.A. Evans, Jr., B.K. Furman, and T.J. Magee .•.......• 357
Water Diffusion in Fused Silica and Iron-Making Slag
By M. Kobayashi, K.S. Goto, and M. Someno ............••........... 361
Combined SIMS-AES-XPS Investigation of the Composition and Interface
Structure of Anodic Oxide Layers on CdO.2H90.8Te (CMT). By U. Kaiser,
O. Ganschow, J. Neelsen, H.M. Nitz, L. Wiedmann, and A. Benninghoven 365
Part V I. Application II. Surface Studies, Ion Microscopy
The Chemical Composition of Oxide Films on Aluminium and Its Influence
on Surface Properties Studied by SIMS, XPS and AES. By M. Textor 372
Study of the Adsorption of Water on Titania by Secondary Ion Mass
Spectrometry. By J. Marien and E. De Pauw ......................... 377
SIMS Studies on Oxyg~n Adsorption on Aluminium and Its Alloys
By D. Marton and A. Csanady •...........•....•......•.....••......• 383
Oxidation and Segregation at the Surfaces of Different Aluminium
Foils and Sheets. By A. Csanady, D. Marton, and T. Turmezey ....... 388
Oxygen Adsorption on Polycrystalline Pt3Pb at Elevated Temperatures.
A SIMS Study. By W. Unger, L. Bori, and D. Marton ••....•.......... 394
x
SIMS Investigations on TiFe Nitrided by NH3-Pretreatment
By G. Kirch and H. ZUchner ........................................ 398
*SIMS/TDMS Studies of Hydrocarbon Interaction with Nickel
By M. Schemmer, P. Beckmann, D. Greifendorf, and A. Benninghoven 405
SIMS Investigation of Adsorption and Chemical Modification of C2H4 and
C2H2 on a Polycrystalline Ni-Surface. By H. Kaarmann, B. Leidenberger,
H. Hoinkes, and H. Wilsch ......................................... 411
*Secondary Ion Emission from UHV-Deposited Amino Acid Overlayers on
Clean Metal Surfaces. By W. Lange, M. Jirikowsky, D. Holtkamp, and
A. Benn i nghoven . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 416
*SIMS Investigation of Adsorption of 02, H20, CO, C02, CH20, and
CH30H and Coadsorption of 02 with CH20 and CH30H on Polycrystalline
Silver Surfaces. By L. Wiedmann, N.L. Wang, R. Jede, L.D. An,
0. Ganschow, and A. Benninghoven .................................. 421
Distribution of Ni, Co, Ga, and Cu in Iron Meteorities
By J. Okano and H. Nishimura ...................................... 426
Metallurgical Applications of Ionic Microscopy. By E. Darque-Ceretti,
R. Dennebouy, J.C. Pivin, and C. Roques-Carmes .................... 431
*Secondary Ion Mass Spectrometry of Organic Compounds
By A. Benn i nghoven ............................... . . . . . . . . . . . . . . . . . 438
Index of Contributors ................................................ 443
XI
