RF / Microwave Circuit Design for Wireless Applications

915 Pages·2012·34.705 MB·English

by  Ulrich L. Rohde, Matthias Rudolph

RF/MICROWAVE CIRCUIT
DESIGN FOR WIRELESS
APPLICATIONS

RF/MICROWAVE CIRCUIT
DESIGN FOR WIRELESS
APPLICATIONS
SECOND EDITION
Ulrich L. Rohde
BrandenburgUniversityofTechnology
Cottbus,Germany
SynergyMicrowaveCorporation
Paterson,NewJersey
Matthias Rudolph
BrandenburgUniversityofTechnology
Cottbus,Germany
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LibraryofCongressCataloging-in-PublicationData:
Rohde,UlrichL.
RF/microwavecircuitdesignforwirelessapplications/UlrichL.Rohde,MatthiasRudolph.–2nded.
p.cm.
ISBN978-0-470-90181-6(hardback)
1. Microwaveintegratedcircuits–Computer-aideddesign. 2. Wirelesscommunication
systems–Equipmentandsupplies–Designandconstruction. 3. Semiconductors–Computer-aideddesign.
4. Microwavecircuits–Designandconstruction. 5. Radiofrequencyintegratedcircuits–Designand
construction.I.Rudolph,Matthias,1969-II.Title.
TK7876.R652013
621.381’32–dc23
2012013020
PrintedintheUnitedStatesofAmerica
10987654321
ToProfessorVittorioRizzoli

CONTENTS
Foreword xiii
Preface xv
1 IntroductiontoWirelessCircuitDesign 1
1.1 Introduction / 1
1.2 SystemFunctions / 3
1.3 TheRadioChannelandModulationRequirements / 5
1.3.1 Introduction / 5
1.3.2 ChannelImpulseResponse / 7
1.3.3 DopplerEffect / 12
1.3.4 TransferFunction / 13
1.3.5 TimeResponseofChannelImpulseResponse
andTransferFunction / 14
1.3.6 LessonsLearned / 16
1.3.7 WirelessSignalExample:TheTDMASysteminGSM / 17
1.3.8 FromGSMtoUMTStoLTE / 28
1.4 AboutBits,Symbols,andWaveforms / 29
1.4.1 Introduction / 29
1.4.2 SomeFundamentalsofDigitalModulationTechniques / 37
1.5 AnalysisofWirelessSystems / 50
1.5.1 AnalogandDigitalReceiverDesigns / 50
1.5.2 Transmitters / 57
1.6 BuildingBlocks / 78
1.7 SystemSpecificationsandTheirRelationshiptoCircuitDesign / 79
1.7.1 SystemNoiseandNoiseFloor / 80
1.7.2 SystemAmplitudeandPhaseBehavior / 89
1.8 Testing / 108
1.8.1 Introduction / 108
1.8.2 TransmissionandReceptionQuality / 112
1.8.3 BaseStationSimulation / 113
1.8.4 GSM / 122
1.8.5 DECT / 122
1.9 ConvertingC/NorSNRtoE /N / 123
B 0
References / 124
FurtherReading / 125
vii
viii CONTENTS
2 ModelsforActiveDevices 127
2.1 Diodes / 128
2.1.1 Large-SignalDiodeModel / 129
2.1.2 MixerandDetectorDiodes / 133
2.1.3 PINDiodes / 141
2.1.4 TuningDiodes / 158
2.2 BipolarTransistors / 203
2.2.1 TransistorStructureTypes / 203
2.2.2 Large-SignalBehaviorofBipolarTransistors / 204
2.2.3 Large-SignalTransistorsintheForward-ActiveRegion / 218
2.2.4 ImprovingRFPerformancebyMeansofHeterostructures / 225
2.2.5 EffectsofCollectorVoltageonLarge-SignalCharacteristicsin
theForward-ActiveRegionofBJTs / 226
2.2.6 EffectsofCollectorCurrentandVoltageonLarge-Signal
CharacteristicsintheForward-ActiveRegionofHBTs / 229
2.2.7 SaturationandInverseActiveRegions / 231
2.2.8 Self-Heating / 236
2.2.9 Small-SignalModelsofBipolarTransistors / 239
2.3 Field-EffectTransistors / 239
2.4 Large-SignalBehaviorofJFETs / 248
2.4.1 Small-SignalBehaviorofJFETs / 251
2.4.2 Large-SignalBehaviorofMOSFETs / 256
2.4.3 Small-SignalModeloftheMOSTransistorinSaturation / 263
2.4.4 Short-ChannelEffectsinFETs / 267
2.4.5 Small-SignalModelsofMOSFETs / 272
2.4.6 III–VMESFETsandHEMTs / 289
2.4.7 Small-SignalGaAsMESFETandHEMTModel / 298
2.5 ParameterExtractionofActiveDevices / 324
2.5.1 Introduction / 324
2.5.2 TypicalSPICEParameters / 324
2.5.3 NoiseModeling / 326
2.5.4 ScalableDeviceModels / 334
2.5.5 GeneratingaDatabankforParameterExtraction / 334
2.5.6 Conclusions / 345
2.5.7 DeviceLibraries / 347
2.5.8 Physics-BasedMESFETModeling / 348
2.5.9 Example:ImprovingtheBFR193WModel / 351
References / 355
FurtherReading / 357
3 AmplifierDesignwithBJTsandFETs 359
3.1 PropertiesofAmplifiers / 359
3.1.1 Introduction / 359
3.1.2 Gain / 364
3.1.3 NoiseFigure(NF) / 369
3.1.4 Linearity / 397
3.1.5 AGC / 413
3.1.6 BiasandPowerVoltageandCurrent(PowerConsumption) / 417