REF60xx High-Precision Voltage Reference With Integrated ADC Drive Buffer datasheet

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REF60xx High-Precision Voltage Reference With Integrated ADC Drive Buffer
1 Features 3 Description
• ExcellentTemperatureDriftPerformance The REF6000 family of voltage references have an
1 integrated low output impedance buffer that enable
– 5ppm/°C(max)from –40°Cto+125°C
the user to directly drive the REF pin of precision
• ExtremelyLowNoise data converters, while preserving linearity, distortion,
– TotalNoise:5µV With47-µFCapacitor and noise performance. Most precision SAR and
RMS
Delta-SigmaADCs,switchbinary-weightedcapacitors
– 1/fNoise(0.1Hzto10Hz):3 µV /V
PP onto the REF pin during the conversion process. In
• IntegratedADCDriveBuffer order to support this dynamic load the output of the
– LowOutputImpedance: < 50mΩ(0-200kHz) voltage reference must be buffered with a low-output
impedance (high-bandwidth) buffer. The REF6000
– FirstSamplePreciseto18BitsWithADS8881
family devices are well suited, but not limited, to drive
– EnablesBurst-ModeDAQSystems
the REF pin of the ADS88xx family of SAR ADCs,
• LowSupplyCurrent:820 μA and ADS127xx family of delta-sigma ADCs, as well
asother digital-to-analogconverters(DACs).
• LowShutdownCurrent:1µA
• HighInitialAccuracy: ±0.05% The REF6000 family of voltage references are able to
maintain an output voltage within 1LSB (18-bit) with
• Very-LowNoiseandDistortion
minimal droop, even during the first conversion while
– SNR: 100.5dB,THD: –125dB(ADS8881)
driving the REF pin of the ADS8881. This feature is
– SNR: 106dB,THD: –120dB(ADS127L01) useful in burst-mode, event-triggered, equivalent-time
• Output CurrentDrive:±4mA sampling, and variable-sampling-rate data-acquisition
systems. The REF60xx variants of REF6000 family
• ProgrammableShort-CircuitCurrent
specify a maximum temperature drift of just 5 ppm/°C
• VerifiedtoDriveREFPinofADS88xxfamilyof and initial accuracy of 0.05% for both the voltage
SARADCsandADS127xxfamilyofWideband ΔΣ reference and the low output impedance buffer
ADCs combined. For various temperature drift options in
REF6000family,seetheDeviceComparison Table.
2 Applications
DeviceInformation(1)
• ATETestersandOscilloscopes
PARTNUMBER PACKAGE BODYSIZE(NOM)
• Test andMeasurementEquipment
REF60xx VSSOP(8) 3.00mmx3.00mm
• AnalogInputModulesforPLCs
(1) Forallavailablepackages,seethepackageoptionaddendum
• MedicalEquipment attheendofthedatasheet.
• PrecisionDataAcquisitionSystems
TypicalApplication
ReferenceDroopcomparison
Power Supply (1LSB=19.07µV,WithADS8881at1MSPS)
RLIM
VIN REF60xx SS OUT_S 4
VIN
EN RBVeafoneltdraeggnaecp e RFILT +Buffer OUT_F RESR B) 23 Regular Voltage Reference Droop
S
L
GND_S FILT GND_F p ( 1
CL oo
CFILT Dr 0
e
R nc –1
e
R Pow+er Supply RF AINP GND REF Refer –2 REF60xx Droop
VIN THS4521 CF ADS8881 –3
AINN
R RF –4
R
Copyright © 2016, Texas Instruments Incorporated 0 200 400 600 800 1000
Time (µs)
C042
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.
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Table of Contents
1 Features.................................................................. 1 9.2 FunctionalBlockDiagram.......................................19
2 Applications........................................................... 1 9.3 FeatureDescription.................................................20
3 Description............................................................. 1 9.4 DeviceFunctionalModes........................................23
4 RevisionHistory..................................................... 2 10 ApplicationsandImplementation...................... 24
10.1 ApplicationInformation..........................................24
5 DeviceComparisonTable..................................... 3
10.2 TypicalApplication................................................24
6 PinConfigurationandFunctions......................... 3
11 PowerSupplyRecommendations..................... 27
7 Specifications......................................................... 4
12 Layout................................................................... 28
7.1 AbsoluteMaximumRatings......................................4
12.1 LayoutGuidelines.................................................28
7.2 ESDRatings..............................................................4
12.2 LayoutExample....................................................28
7.3 RecommendedOperatingConditions.......................4
13 DeviceandDocumentationSupport................. 29
7.4 ThermalInformation..................................................4
7.5 ElectricalCharacteristics..........................................5 13.1 DocumentationSupport........................................29
7.6 TypicalCharacteristics..............................................7 13.2 RelatedLinks........................................................29
13.3 ReceivingNotificationofDocumentationUpdates29
8 ParameterMeasurementInformation................14
13.4 CommunityResources..........................................29
8.1 SolderHeatShift.....................................................14
13.5 Trademarks...........................................................29
8.2 ThermalHysteresis.................................................15
13.6 ElectrostaticDischargeCaution............................29
8.3 ReferenceDroopMeasurements............................16
13.7 Glossary................................................................30
8.4 1/fNoisePerformance............................................18
14 Mechanical,Packaging,andOrderable
9 DetailedDescription............................................ 19
Information........................................................... 30
9.1 Overview.................................................................19
4 Revision History
ChangesfromRevisionA(June2016)toRevisionB Page
• ChangedtheDescription ....................................................................................................................................................... 1
• ChangedtheDeviceComparisonTable ............................................................................................................................... 3
• ChangedlistofdevicesforoutputcurrentinRecommendedOperatingConditions ............................................................ 4
• ChangedloadregulationmaxvalueforREF6050atT =–40°Cto+125°Cfrom30to50.................................................. 5
A
• Changed"secondpass"to"finalpass"inlastparagraphofSolderHeatShiftsection ...................................................... 14
• AddedlinktoSLYY097inOverviewsection........................................................................................................................ 19
ChangesfromOriginal(May2016)toRevisionA Page
• Changedfromproductpreviewtoproductiondata................................................................................................................ 1
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5 Device Comparison Table
DEVICEFAMILY TEMPERATUREDRIFT
REF60xx 5ppm/°Cfrom–40to125°C
REF61xx 8ppm/°Cfrom–40to125°C
REF62xx 3ppm/°Cfrom0to70°C
6 Pin Configuration and Functions
DGKPackage
8-PinVSSOP
TopView
VIN 1 8 GND_S
EN 2 7 GND_F
SS 3 6 OUT_F
FILT 4 5 OUT_S
Not to scale
PinFunctions
PIN
TYPE DESCRIPTION
NAME NO.
EN 2 Input Enablepin
Filtercapacitorpin.Acapacitor(C )≥1µFmustbeconnectedbetweentheFILTpinand
FILT 4 — FILT
groundforstability.
GND_F 7 Ground Groundforcepin
GND_S 8 Ground Groundsensepin
OUT_F 6 Output Outputvoltageforcepin
OUT_S 5 Input Outputvoltagesensepin
Shortcircuitcurrentlimitpin.Connectaresistortothispintosettheoutputshort-circuitcurrent
SS 3 —
limit.ConnecttoVINpinforhighestcurrentlimit
VIN 1 Power Inputsupplyvoltagepin
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7 Specifications
7.1 Absolute Maximum Ratings(1)
overoperatingfree-airtemperaturerange(unlessotherwisenoted)
MIN MAX UNIT
V –0.3 6 V
IN
Inputvoltage
V –0.3 V +0.3 V
EN IN
Operatingtemperature,T –55 150 °C
A
Junctiontemperature,T 150 °C
j
Storagetemperature,T –65 150 °C
stg
(1) StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestressratings
only,whichdonotimplyfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommended
OperatingConditions.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
7.2 ESD Ratings
VALUE UNIT
Human-bodymodel(HBM),perANSI/ESDA/JEDECJS-001(1) ±1000
V Electrostaticdischarge V
(ESD) Charged-devicemodel(CDM),perJEDECspecificationJESD22-C101(2) ±250
(1) JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess.
(2) JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess.
7.3 Recommended Operating Conditions
MIN NOM MAX UNIT
REF6025 3 5.5
Supplyinputvoltage
V REF6030,REF6033,REF6041,REF6045 V +0.25 5.5 V
IN (I =0mA) OUT
OUT
REF6050 5.3 5.5
V Enablevoltage 0 V V
EN IN
REF6025,REF6030,REF6033,REF6041 –4 4
I Outputcurrent REF6045 –3.5 3.5 mA
L
REF6050 –3 3
T Operatingtemperature –40 25 125 °C
A
7.4 Thermal Information
REF60xx
THERMALMETRIC(1) DGK(VSSOP) UNIT
8PINS
R Junction-to-ambientthermalresistance 158.5 °C/W
θJA
R Junction-to-case(top)thermalresistance 51.2 °C/W
θJC(top)
R Junction-to-boardthermalresistance 79.5 °C/W
θJB
ψ Junction-to-topcharacterizationparameter 5.2 °C/W
JT
ψ Junction-to-boardcharacterizationparameter 78.0 °C/W
JB
R Junction-to-case(bottom)thermalresistance N/A °C/W
θJC(bot)
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication
report.
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7.5 Electrical Characteristics
atT =25°C,V =5VforalldevicesexceptREF6050,V =5.4VforREF6050,I =0mA,C =22µF,C =1µF,and
A IN IN L L FILT
V =5V(unlessotherwisenoted)
EN
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT
ACCURACYANDDRIFT
Outputvoltageaccuracy -0.05% 0.05%
Outputvoltagetemperature
coefficient(1) 5 ppm/°C
LINEANDLOADREGULATION
TA=25°C 4 20
REF6025 VOUT+0.5V≤VIN≤5.5V
TA=–40°Cto+125°C 30
REF6030, TA=25°C 4 20
REF6033,
ΔVO(ΔVI) Lineregulation RREEFF66004415, VOUT+0.25V≤VIN≤5.5V TA=–40°Cto+125°C 30 ppm/V
TA=25°C 7 60
REF6050 VOUT+0.3V≤VIN≤5.5V
TA=–40°Cto+125°C 120
REF6025, TA=25°C 2 20
REF6030, IL=0mAto4mA,
RREEFF66003431, VIN=VOUT+600mV TA=–40°Cto+125°C 30
ΔVO(ΔIL) Loadregulation,sourcingandsinking REF6045 IL=0mAto3.5mA, TA=25°C 2 20 ppm/mA
VIN=VOUT+600mV TA=–40°Cto+125°C 30
REF6050 IL=0mAto3mA, TA=25°C 2 20
VIN=VOUT+400mV TA=–40°Cto+125°C 50
ISC Short-circuitcurrent SS=open 10.5 mA
NOISE
CL=22µF 5
Totalintegratednoise µVRMS
CL=47µF 5
Lowfrequencynoise 0.1Hz≤f≤10Hz 3 µVPP/V
OUTPUTIMPEDANCE
Outputimpedance f=DCto200kHz,CL=47μF 50 mΩ
TURN-ONTIME
ton Turn-ontime 0.1%settling,CL=47µF,SS=open,REF6025 100 ms
HYSTERESISANDLONGTERMDRIFT
0to1000hat25°C 80
Longtermstability ppm
1000hto2000hat25°C 20
25°C,–40°C,125°C,25°C(cycle1) 33
Outputvoltagehysteresis(2) ppm
25°C,–40°C,125°C,25°C(cycle2) 8
CAPACITIVELOAD
CL Stableoutputcapacitorvalue 10 47 µF
(1) Temperaturedriftisspecifiedaccordingtotheboxmethod.SeetheFeatureDescriptionsectionformoredetails.
(2) SeetheThermalHysteresissection.
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Electrical Characteristics (continued)
atT =25°C,V =5VforalldevicesexceptREF6050,V =5.4VforREF6050,I =0mA,C =22µF,C =1µF,and
A IN IN L L FILT
V =5V(unlessotherwisenoted)
EN
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT
OUTPUTVOLTAGE
REF6025 2.5
REF6030 3
REF6033 3.3
VOUT Outputvoltage V
REF6041 4.096
REF6045 4.5
REF6050 5
POWERSUPPLY
REF6025, TA=25°C 0.82 0.90
REF6030,
RREEFF66003431, Activemode,VEN=5V TA=–40°Cto+125°C 1.1 mA
ICC Supplycurrent RREEFF66004550, Activemode,VEN=5V TTAA==–2450°C°Cto+125°C 0.83 01..9155
TA=25°C 1 3
Shutdownmode,VEN=0V µA
TA=–40°Cto+125°C 15
Voltagereferenceinactivemode(EN=1) 1.6
Enablepinvoltage V
Voltagereferenceinshutdownmode(EN=0) 0.6
Enablepincurrent VEN=5V 100 150 nA
IL=0mA 500 500
REF6025
IL=4mA 600
IL=0mA 50 250
REF6030,REF6033,REF6041
IL=4mA 600
Dropoutvoltage mV
IL=0mA 50 250
REF6045
IL=3.5mA 600
IL=0mA 100 300
REF6050
IL=3mA 400
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7.6 Typical Characteristics
atT =25°C,I =0mA,andV =5V,usingREF6025(unlessotherwisenoted)
A L IN
100 100
90 90
80 80
70 70
%) %)
n ( 60 n ( 60
atio 50 atio 50
pul 40 pul 40
o o
P P
30 30
20 20
10 10
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Drift Distribution (ppm/ºC) Drift Distribution (ppm/ºC)
C002 C003
T =–40°Cto+125°C T =–40°Cto+85°C
A A
Figure1.DriftDistribution Figure2.DriftDistribution
100 40
90
80
30
70
%) %)
n ( 60 n (
atio 50 atio20
pul 40 pul
o o
P P
30
10
20
10
0 0
5 4 3 2 1 0 1 2 3 4 5 5 4 3 2 1 0 1 2 3 4 5
0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
0. 0. 0. 0. 0. 0. 0. 0. 0. 0. 0. 0. 0. 0. 0. 0. 0. 0. 0. 0.
- - - - - - - - - -
Initial Accuracy (%) C005 Solder Heat Shift (%) C004
Figure3.InitialAccuracyDistribution Figure4.Solder-HeatShiftDistribution
0.05 250
0.04
%) 0.03 200 90(cid:131)C
y ( V)
curac 00..0012 e (m150 125(cid:131)C
c g
A a
e 0 olt
g V
put Volta--00..0021 Dropout 100 25(cid:131)C
ut-0.03 50
O
-0.04 -40(cid:131)C
-0.05 0
–50 –25 0 25 50 75 100 125 –4 –3 –2 –1 0 1 2 3 4
Temperature (ºC) C001 Load Current (mA) C017
Figure5.OutputVoltageAccuracyvsTemperature Figure6.DropoutVoltagevsLoadCurrent
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Typical Characteristics (continued)
atT =25°C,I =0mA,andV =5V,usingREF6025(unlessotherwisenoted)
A L IN
14 14
12 12
A) A)
m m
m/10 m/10
p p
p p
n ( 8 n ( 8
o o
ati ati
ul 6 ul 6
g g
e e
R R
d 4 d 4
a a
o o
L L
2 2
0 0
–50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125
Temperature (ºC) C006 Temperature (ºC) C007
VIN=VOUT+600mV, VIN=VOUT+600mV,
IL=0mAto4mA IL=0mAto4mA
Figure7.LoadRegulationSourcingvsTemperature Figure8.LoadRegulationSinkingvsTemperature
8 1000
950
m/V) 6 A) 900
n (pp ent (µ 850
gulatio4 y Curr 800
Re ppl
ne 2 Su 750
Li
700
0 650
–50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125
Temperature (ºC) C01 Temperature ((cid:131)C) C019
V +0.25V≤V ≤5.5V
OUT IN
Figure9.LineRegulationvsTemperature Figure10.SupplyCurrentvsTemperature
870
850
A)
µ830
urrent (810 EN
C 2 V/div
y
pl
p790
u
S
770 VREF
750
2 3 4 5 6 Time (100 ms/div)
Input Voltage (V) C020 C018
Figure11.SupplyCurrentvsInputVoltage Figure12.Turn-OnSettlingTime
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Typical Characteristics (continued)
atT =25°C,I =0mA,andV =5V,usingREF6025(unlessotherwisenoted)
A L IN
25
](cid:12)
+
¥
Q9(cid:18)20
V/div) HQVLW\(cid:3)(cid:11)15
Voltage (2 µ VH(cid:3)6SHFWUDO(cid:3)’10 47 µF 22 µ1F0 µF
RL
1 5
XW(cid:3)
S
XW
2 0
Time (2 s/div) 1k 10k 100k 1000k
C021 Frequency (Hz) C022
Figure13.0.1-Hzto10-HzNoise Figure14.Output-VoltageNoiseSpectrum
–50 30
B)
n Ratio (d ––7600 CL = 47 µF (cid:159)e (m) 2205
o c
ejecti –80 edan15 10 µF
R p
Supply –90 CL = 22 µF utput Im10 22 µF
wer –100 O 5 47 µF
o
P
–110 0
10 100 1k 10k 100k 100 1k 10k 100k 1M
Frequency (Hz) C011 Frequency (Hz)
C025
Graphobtainedbydesignsimulation
Figure15.PSRRvsFrequency Figure16.OutputImpedancevsFrequency
V V
OUT OUT
2 mV/div 50 mV/div
+1 mA +3 mA
2 mA/div 6 mA/div
-1 mA -1 mA -3 mA -3 mA
Time (0.5 ms/div) 0 5 10 15
C014 Time (5 ms/div) C015
Loadcurrent=±1mA Loadcurrent=±3mA
Figure17.LoadTransientResponse Figure18.LoadTransientResponse
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Typical Characteristics (continued)
atT =25°C,I =0mA,andV =5V,usingREF6025(unlessotherwisenoted)
A L IN
50
VIN - 0.25 V VIN - 0.25 V
40
500 mV/div %)
VIN + 0.25 V n (30
o
ati
pul20
o
V P
REF
200 µV/div
10
0
Time (500 µs/div) -80 -60 -40 -20 0 20 40 60
Thermal hysteresis - Cycle 1 (ppm)
C013
C030
Figure19.LineTransientResponse
Figure20.ThermalHysteresisDistribution(Cycle1)
50 100
40 10
(cid:159)) REF20xx (C = 10 µF)
Population (%) 2300 put Impedance ( 0.11 REF60xx (CL = 10 µF) L
ut
O
10 0.01
0 0.001
-20 -15 -10 -5 0 5 15 20 100 1k 10k 100k 1M
Thermal hysteresis - Cycle 2 (ppm) Frequency (Hz)
C063
C031
Figure21.ThermalHysteresisDistribution(Cycle2) Figure22.OutputImpedanceComparison
0 0
–20 –20
–40 –40
–60 –60
B) B)
d –80 d –80
ude ( –100 ude ( –100
mplit –120 mplit –120
A –140 A –140
–160 –160
–180 –180
–200 –200
0 100 200 300 400 500 0 100 200 300 400 500
Frequency (kHz) C024 Frequency (kHz) C037
REF6050drivingREFpinofADS8881, REF6050drivingREFpinofADS8881,
f =1kHz,SNR=100.5dB,THD=–125.9dB f =2kHz,SNR=100.4dB,THD=–123.9dB
IN IN
Figure23.TypicalFFTPlot Figure24.TypicalFFTPlot
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