Table Of ContentP R O P E R T I ES OF
L i t h i um N i o b a te
E d i t ed by
K. K. W O NG
N o r t h s t ar P h o t o n i c s, I n c ., U SA
IEE I N S P EC
Published by: INSPEC, The Institution of Electrical Engineers,
London, United Kingdom
© 2002: The Institution of Electrical Engineers
This publication is copyright under the Berne Convention and
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The Institution of Electrical Engineers,
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While the authors and the publishers believe that the
information and guidance given in this work are correct, all
parties must rely upon their own skill and judgment when
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The moral right of the authors to be identified as authors of
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the Copyright, Designs and Patents Act 1988.
British Library Cataloguing in Publication Data
A CIP catalogue record for this book
is available from the British Library
ISBN 0 85296 799 3
Printed in England by Short Run Press Ltd., Exeter
Introduction
The growth of lithium niobate boules in the late 1960s has resulted in the use of the material in
realising signal processing chips for televisions and video cassette recorders. Since then, tremendous
progress has been made in the growth of high quality optical grade lithium niobate material by a very
small number of crystal growth centres. With this advancement in material quality, high performance
integrated optical devices have been demonstrated.
Waveguide devices such as high speed optical modulators (OC-48 and OC-192) have been
extensively deployed in today's advanced long distance dense wavelength division multiplex
(DWDM) telecommunication systems by various telecommunication companies around the world.
The use of such high speed optical modulators are currently being deployed in metro DWDM
systems. Another important use of this material is in commercial and military navigation systems
where the heart of the system comprises an integrated optical signal processing chip, usually called
the gyro chip.
Other uses of lithium niobate in optical dispersion compensators, optical wavelength converters and
optical parametric amplifiers employing periodically poled lithium niobate proton exchanged
waveguides are being engineered in a number of companies.
Since the previous EMIS book on LiNbO in 1989, an enormous amount of development and
3
manufacturing has been carried out with the benefit of improved material quality. For example, since
1989 over 6,500 research papers on lithium niobate have been published. This new book incorporates
and builds on the information in the old book and highlights these new developments. In addition, the
format of presentation has also been improved to allow the reader easier access to knowledge of the
various properties.
The editor would like to express his sincere thanks to all contributing authors for their time and effort
in preparing the various Datareviews. In addition he would like to express his sincere thanks to the
Managing Editor of EMIS (Electronic Materials Information Service) for his constant help,
encouragement and patience throughout the preparation of this book.
Finally, I would like to thank God for giving the scientific community such wonderful insights into
His creation by quoting the first three lines of Psalm 19 from the Holy Bible:
The heavens declare the glory of God; and the firmament sheweth his handywork.
Day unto day uttereth speech, and night unto night sheweth knowledge.
There is no speech nor language, where their voice is not heard.
K.K. Wong
July 2002
Contributing Authors
F. Agullo-Lopez 1.4
Universidad Autonoma de Madrid
Ciudad Universitaria
Canto Blanco
28049 Madrid
Spain
J.A. Aust1 13.1
National Institute of Standards and Technology
325 Broadway
Boulder
CO 80305
USA
F. Caccavale 8.10,12.1-12.3,13.2-13.4
SAES GETTERS, SPA
Group Headquarters Viale Italia, 77
20020 Lainate (MI)
Italy
D. Ciplys 10.5
Moscow Institute of Electronic Technology
Department of Chemistry
Zelenograd
Moscow 103498
Russia
D. Craig 5.1-5.4,10.1-10.4
CIENA Communications, Inc.
920 Elkridge Landing Road
Linthicum
MD 21090
USA
T. Fang 11.2
Crystal Technology, Inc.
1040 East Meadow Circle
Palo Alto
CA 94303
USA
V.A. Fedorov 3.1,3.2,8.6-8.9,10.5
Moscow Institute of Electronic Technology
Department of Chemistry
Zelenograd
Moscow 103498
Russia
1 Current address is: JA. Aust, Research Electro-Optics, Inc., 1855 S. 57th Street, Boulder, CO 80301, USA
C. Florea Ll 4.1 - 4.4 6.I 7.2 7J 8.2 SA 9.6 9.7 11.4 -11.6
9 9 9 9 9 9 9 9 9
Northstar Photonics, Inc.
6464 Sycamore Court
Maple Grove
MN 55369
USA
G. Foulon 1.2, 2.1
Crystal Technology, Inc.
1040 East Meadow Circle
Palo Alto
CA 94303
USA
J. Garcia Sole 1.4
Universidad Autonoma de Madrid
Ciudad Universitaria
Canto Blanco
28049 Madrid
Spain
C. Geosling 13.5
Northrup Grumman
5500 Canoga Avenue
Woodland Hills
CA 91367
USA
K.A. Green 8.3 9.1 - 9.3 9.5 11.3
9 9 9
Northrup Grumman, L5100
600 Hicks Road
Rolling Meadows
IL 60008
USA
V. Hinkov 10.6 10.7 15.3
9 9
Fraunhofer Institut fur Physikalische Messtechnik
Heidenhofstrasse 8
D-79110 Freiburg
Germany
D. Jundt 1.2, 2.I 8.I ILl 11.2
9 9 9
Crystal Technology, Inc.
1040 East Meadow Circle
Palo Alto
CA 94303
USA
Yu.N. Korkishko 3.1,3.2,8.6-8.9,10.5
Moscow Institute of Electronic Technology
Department of Chemistry
Zelenograd
Moscow 103498
Russia
S.M. Kostritskii 8.8, 8.9
Moscow Institute of Electronic Technology
Department of Chemistry
Zelenograd
Moscow 103498
Russia
F. Laurell 8.7
Royal Institute of Technology (KTH)
Department of Physics
SE-16440Kista
Stockholm
Sweden
I. Mnushkina 2.3
Deltronic Crystal Industries, Inc.
60 Harding Avenue
Dover
NJ07801
USA
R. Rimeika 10.5
Moscow Institute of Electronic Technology
Department of Chemistry
Zelenograd
Moscow 103498
Russia
K.H. Ringhofer 14.2,14.3
University of Osnabruck
Department of Physics
PO 4469
D-4500 Osnabruck
Germany
C. Sada 12.2,13.3,13.4
University of Padova
INFM and Physics Department
Via Marzolo 8
35131 Padova
Italy
N.A. Sanford 13.1
National Institute of Standards and Technology
325 Broadway
Boulder
CO 80305
USA
F. Segato 12.1 -12.3,13.3,13.4
Telsay Telecommunications via delPIndustria
131055 Quinto di Treviso
Italy
E.W. Taylor 14.1
International Photonics Consultants, Inc.
30TierraMonteNE
Albuquerque
NM 87122
USA
K.K. Wong 8.5,15.1,15.2
Northstar Photonics, Inc.
6464 Sycamore Court
Maple Grove
MN 55369
USA
In producing the present volume Datareviews by the following authors of the previous EMIS book
dealing with lithium niobate, Properties of Lithium Niobate (INSPEC, 1989), were updated, adapted,
merged or reproduced:
M.N. Armenise, A. Ballato, J.C. Brice, Y. Cho, I. Foldvari, E. Fries, L.E. Halliburton, L.I. Ivleva,
T. Kanata, C.J.G. Kirkby, L. Kovacs, K. Kubota, S.H. Lee, M.F. Lewis, T.H. Lin, S. Matsumura,
D.P. Morgan, R.C. Peach, A. Peter, CW. Pitt, K. Polgar, N.M. Polozkov, G.T. Reed, J.F. Scott,
D. Taylor, I. Tomeno, P.D. Townsend, R.S. Weis, B.L. Weiss, CL. West, K. Yamanouchi.
Abbreviations
AAS atomic absorption spectroscopy
ABPM active-beam propagation method
AC alternating current
ADC automatic diameter control
ADI alternated direction implicit
AES Auger electron spectroscopy
AFM atomic force microscopy
AO acousto-optic
APE annealed proton-exchanged
ASE amplified spontaneous emission
ATR attenuated total reflection
BA benzoic acid
BPM beam propagation method
CLN congruent lithium niobate
CPU central processing unit
CRSS critical resolved shear stress
CW continuous wave
CZ Czochralski
DC direct current
DCXRD double-crystal X-ray diffractometry
DI deionised
DIC differential interference contrast
DMPE dilute melt proton exchange
DTA differential thermal analysis
EFG edge-defined film-fed grown
ENDOR electron nuclear double resonance
EPR electron paramagnetic resonance
ERDA elastic recoil detection analysis
ESR electron spin resonance
EXAFS extended X-ray absorption fine structure
FED free electroacoustic decay
FTIR Fourier transform infrared
FWHM full width at half maximum
GPE graded proton exchange
HT high temperature
HTPE high-temperature proton exchange
ICP inductively coupled plasma
ICP-AES inductively coupled plasma atomic emission spectroscopy
ID identification (of wafers)
IDT interdigital transducer
IL insertion loss
IR infrared
IWKB inversion of Wentzel-Kramer-Brillouin (approximation technique)
LB lithium benzoate
LE lateral excitation
LN lithium niobate
LNO lithium niobate
LO longitudinal optical
LPE liquid phase epitaxy
LSAW leaky surface acoustic wave
LT low temperature
MBE molecular beam epitaxy
MP melting point
MPE melt-phase epitaxy
NF near field
NLO non-linear optics
NMR nuclear magnetic resonance
NRA nuclear reaction analysis
NS non-stoichiometry
NSSL non-synchronous scattering loss
OPO optical parametric oscillator
PA pyrophosphoric acid
PAC perturbed angular correlation
PE proton-exchange(d)
PI proportional integral
PID proportional integral derivative
PIXE particle induced X-ray emission
PL photoluminescence spectra
PLD pulsed laser deposition
PPLN periodically poled lithium niobate
PRD photorefractive damage
PRS photorefractive sensitivity
PRW photorefractive waveguide
QE quasi-extensional
QL quasi-longitudinal
QPM quasi-phase-matched
QS quasi-shear
RAC reflective array compressor
RBS Rutherford backscattering spectrometry
RE rare earth
RF radio frequency
RHEED reflection high energy electron diffraction
RIBE reactive ion beam etching
RIE reactive ion etching
RPE reverse proton-exchange
RSF relative sensitivity factor
RSI rear-shear interferometer
RT room temperature
SAW surface acoustic wave
SEM scanning electron microscopy
SH second harmonic
SHG second harmonic generation
SIMS secondary ion mass spectrometry
SLN stoichiometric lithium niobate
SNR signal-to-noise ratio
SPE soft proton exchange
STM scanning tunnelling microscopy
SVEA slowly varying envelope approximation
TCF temperature coefficient of frequency
TDPAC time dependent perturbed angular correlations)
TE thickness excitation
TE transverse electric
TI titanium indiffusion
TIPE titanium indiffused proton exchanged
TM temperature of melting
TM transition metal
TM transverse magnetic
TO transverse optical
TOF time-of-flight
UHF ultra-high frequency
UV ultraviolet
VUV vacuum ultraviolet
WKB Wentzel-Kramer-Brillouin (approximation technique)
XRD X-ray diffraction
XSW X-ray standing waves
