Table Of ContentPower Devices for
Efficient Energy
Conversion
Pan Stanford Series on Renewable Energy — Volume 2
Power Devices for
Efficient Energy
Conversion
Gourab Majumdar
editors
Ikunori Takata
Preben Maegaard
Anna Krenz
Wolfgang Palz
The Rise of Modern Wind Energy
Wind Power
for the World
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Publishedby
PanStanfordPublishingPte.Ltd.
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PowerDevicesforEfficientEnergyConversion
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ISBN978-981-4774-18-5(Hardback)
ISBN978-1-351-26232-3(eBook)
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Contents
Preface ix
1 Introduction 1
1.1 EraPredatingtheBirthofPowerSemiconductor
Devices 2
1.2 DawnofPowerElectronics 5
1.3 Japan’sLeadingEffortinPowerElectronics 7
1.4 ChronologyofPowerDevicesinthe1980s 10
1.5 ChronologyofPowerModulesinthe1980s 11
1.6 HistoryofRecentPowerSwitchingSemiconductors 12
1.7 KeyRoleofPowerDevicesforEfficientPower
Conversion 15
1.7.1 RoleofDevicesinPowerAmplification 15
1.7.2 RoleofDevicesinPowerSwitching
Applications 21
1.7.2.1 Powerlossesbypowerswitchesin
powerconversionelectronics 23
2 BasicTechnologiesofMajorPowerDevices 27
2.1 PowerDeviceCategories 27
2.2 KeySemiconductorOperationPrinciples 28
2.2.1 EssenceofthePowerDevice 28
2.2.2 CharacteristicsoftheSemiconductor 32
2.2.3 p-Typeandn-TypeSemiconductors 36
2.2.4 PotentialBarrierbetweenRegionsHaving
DifferentImpurityConcentrations 39
2.3 BasicOperationofPowerDevices 43
2.3.1 ReverseVoltageBlocking 43
2.3.2 ForwardConducting 51
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vi Contents
2.3.3 Voltage-HoldingAbilitywithLargeCurrent:
SOA 54
2.4 DiodeRectifiers 60
2.4.1 DiodeStructures 60
2.4.2 TransientOperationofapinDiode 65
2.4.3 BasicOperationofapinDiode 72
2.4.4 High-VoltageLarge-CurrentOperationofa
pinDiode 81
2.5 Fast-RecoveryDiodeforaTypicalFreewheeling
Function 83
2.5.1 NeedforFirst-RecoveryDiodes 83
2.5.2 EffectofLifetimeControl 87
2.5.3 ControlMethodsoftheLifetime 90
2.5.4 VariousRecombinationModels 93
2.5.5 LeakageCurrentCausedbyLifetimeKillers 99
2.5.5.1 Pairgenerationleakagecurrent 99
2.5.5.2 Diffusionleakagecurrent 101
2.5.6 InterpretationofObservedJ –V
F F
Characteristics 103
2.6 DevicesoftheThyristorFamily 105
2.6.1 Thyristor 105
2.6.2 GTO/GCT 107
2.7 BipolarJunctionTransistors 112
2.7.1 BJTStructures 112
2.7.2 BasicOperationoftheBJT 124
2.7.3 High-VoltageLarge-CurrentOperation
oftheBJT 129
2.7.4 SafeOperatingAreaoftheBJT 135
2.8 Metal-Oxide-SemiconductorField-EffectTransistors 136
2.9 InsulatedGateBipolarTransistors 144
2.9.1 IGBTStructures 144
2.9.2 BasicOperationoftheIGBT 158
2.9.3 High-VoltageLarge-CurrentOperation
oftheIGBT 166
2.9.4 SafeOperatingAreaoftheIGBT 170
2.9.4.1 ObservationofIGBTdestructions 171
2.9.4.2 Destructionmechanismofreal
IGBTs 175
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Contents vii
3 AppliedPowerDeviceFamily:PowerModulesand
IntelligentPowerModules 181
3.1 ReviewofthePowerModuleConceptand
EvolutionHistory 181
3.2 PowerModuleConstructionalFeaturesand
DesignAspects 185
3.2.1 BasicAspectsofPowerModuleConstruction
andDesign 189
3.2.1.1 Whatarethecharacteristicsrequired
fromapowermodulepackage? 189
3.2.1.2 Whatarethefeaturesandissues
relatedtotypicalpowermodule
packagedesigns? 192
3.2.2 FundamentalsofPowerModuleStructural
ReliabilityandLifeEndurance 197
3.3 State-of-the-ArtKeyPowerModuleComponents 207
3.3.1 Dual-in-LineIntelligentPowerModule 208
3.3.2 IntelligentPowerModule 211
3.3.2.1 AreviewoftheIPM’sfundamental
concept 213
3.3.2.2 Chiptechnologiesdrivenbythe
IPMevolution 217
3.4 TipsonandGuidelinesforApplyingPowerModules 236
3.4.1 FormulasCommonforPowerDeviceDriver
CircuitDesigns 236
3.4.2 StructureandOperationoftheIGBTDevice
UsedinaPowerModule 237
3.4.2.1 ReviewofpowerMOSFETandIGBT
basicoperationprinciple 240
3.4.2.2 Reviewofaparasiticthyristor’s
destructivelatch-upinanIGBTcell 248
3.4.3 PowerCircuitDesign 248
3.4.3.1 Turn-offsurgevoltage 249
3.4.3.2 Freewheelingdioderecoverysurge 250
3.4.3.3 Designissuesrelatedtogroundloops 253
3.4.3.4 Reducinggatecircuitinductanceand
avoidingmal-triggering 256
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viii Contents
3.4.3.5 Powercircuitimpedanceand
overvoltageprotection 260
3.4.4 PowerCircuitThermalDesignAspects 265
3.4.4.1 Estimatingpowerlosses 266
3.4.4.2 Estimatingthejunctiontemperature 271
4 FutureProspects 273
4.1 SummarizingDeviceAchievements 274
4.2 FutureProspectsofSilicon-BasedPowerDevice
Technologies 278
4.2.1 OverviewofthePowerMOSFETandthe
SuperjunctionMOSFET 278
4.2.1.1 PowerMOSFET 278
4.2.1.2 SuperjunctionMOSFET 281
4.2.2 ReviewofIGBTChipTechnologyandIts
FutureProspects 283
4.2.3 ReviewofDiodeChipTechnologyandIts
FutureProspects 286
4.2.4 IntegratedPowerChipsCombiningIGBT
andDiodeFunctions 291
4.2.4.1 Reverse-conductingIGBT 292
4.2.4.2 Reverse-blockingIGBT 293
4.3 ProspectofUsingWide-BandgapMaterials 295
4.3.1 WBGMaterial–BasedAdvancedPower
ChipTechnologies 296
4.3.2 BenefitsfromSiCApplication 299
4.3.3 StatusofSiCDevices 301
4.3.4 LookingatApplicationRangesforWBG
Devices 313
Bibliography 317
Index 323
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Preface
Recently the role of power electronics and power devices in
addressing the challenges in power and energy conversion and
storage has been given wide attention as climate change has
become a crucial global issue. In power electronics applications,
the power density factor related to system design has improved
remarkably in the past two decades. The main contributions in
this growth have come from timely development of newer power
modules,achievedthroughmultidimensionalmajorbreakthroughs
in insulated gate bipolar transistor (IGBT) and other power chip
technologies; packaging structures; and functionality integration
concepts. Driven by various application needs in the past decades,
various generations of the IGBT and intelligent power modules
(IPMs) have evolved so far and have been widely applied in
different power electronics devices, covering industrial motor
controls,householdappliances,railwaytraction,automotivepower-
trainelectronics,windmillandsolarpowergenerationsystems,etc.
Additionally,aggressiveR&Dachievementshavebeenmadeinwide-
bandgap (WBG) power devices, especially by employing SiC as the
basesemiconductormaterial.
In this book, state-of-the-art power device technologies, their
physicsandoperatingprinciples,featuresrelatedtodesign,andtips
forapplicationsthathavedriventhevariousdeviceevolutionswill
be discussed. Also, the major development trends in the areas of
power chip and module technologies will be introduced, including
perspectivesofWBGdevices.
G.Majumdar
I.Takata
