Table Of ContentPlasma-Surface Interactions and
Processing of Materials
NATO ASI Series
Advanced Science Institutes Series
A Series presenting the results of activities sponsored by the NA TO Science Committee,
which aims at the dissemination of advanced scientific and technological knowledge,
with a view to strengthening links between scientific communities.
The Series is published by an international board of publishers in conjunction with the
NATO Scientific Affairs Division
A Life Sciences Plenum Publishing Corporation
B Physics London and New York
C Mathematical Kluwer Academic Publishers
and Physical Sciences Dordrecht, Boston and London
D Behavioural and Social Sciences
E Applied Sciences
F Computer and Systems Sciences Springer-Verlag
G Ecological Sciences Berlin, Heidelberg, New York, London,
H Cell Biology Paris and Tokyo
Series E: Applied Sciences -Vol. 176
Plasma-Surface Interactions and
Processing of Materials
edited by
Orlando Auciello
Microelectronics Center of North Carolina and
North Carolina State University,
Research Triangle Park,
North Carolina, U.S.A.
Alberto Gras-Marti
Jose Antonia Valles-Abarca
University of Alicante,
Alicante, Spain
and
Daniel L. Flamm
AT&T Bell Laboratories,
Murray Hill, New Jersey,
and University of California,
Berkeley, U.S.A.
Kluwer Academic Publishers
Dordrecht / Boston / London
Published in cooperation with NATO Scientific Affairs Division
Proceedings of the NATO Advanced Study Institute on
Plasma-Surface Interactions and Processing of Materials
Alicante, Spain
September 4-16, 1988
Library of Congress Cataloging in Publication Data
NATO Advanced Study Institute on Plasma-Surface Interactions and
Processing of Materials (1988 Alicante, Spain)
Plasma-surface interactions and processing of materials
proceedings of the NATO Advanced Study Institute on Plasma-Surface
Interactions and Processing of Materials, Allcante, Spain, September
4-16, 1988 / edited by Orlando Auciello.
p. cm. -- (NATO ASI series. Series E, Applied sciences; vol. 176)
1. Materials--Surfaces--Congresses. 2. Materials--Effect of
radiation on--Congresses. 3. Microelectronics--Materials--Effect of
radiation on--Congresses. 4. Plasma etching--Congresses.
I. Auciello, Orlando. II. Title. III. Series, NATO ASI series.
Series E, Applied sciences; no. 176.
TA418.7.N36 1988
620' .44--dc20 89-48126
ISBN -13: 978-94-010-7369-1 e-ISBN-13: 978-94-009-1946-4
DOl: 10.1007/978-94-009-1946-4
Published by Kluwer Academic Publishers,
P.O. Box 17, 3300 AA Dordrecht, The Netherlands.
Kluwer Academic Publishers incorporates the publishing programmes of
D. Reidel, Martinus Nijhoff, Dr W. Junk and MTP Press.
Sold and distributed in the U.S.A. and Canada
by Kluwer Academic Publishers,
101 Philip Drive, Norwell, MA 02061, U.S.A.
In all other countries, sold and distributed
by Kluwer Academic Publishers Group,
P.O. Box 322, 3300 AH Dordrecht, The Netherlands.
Printed on acid-free paper
All Rights Reserved
© 1990 by Kluwer Academic Publishers and copyright holders as specified on appro
priate pages within
Softcover reprint of the hardcove 1s t edition 1990
No part of the material protected by this copyright notice may be reproduced or
utilized in any form or by any means, electronic or mechanical, including photo
copying, recording or by any information storage and retrieval system, without written
permission from the copyright owner.
TABLE OF CONTENTS
Preface ix
Report on the NATO/ASI xi
Acknowledgements xii
BASIC PHYSICS OF PLASMASJDISCHARGES: PRODUCTION OF ACTIVE SPECIES
A. Ricard
PLASMA CHEMISTRY IN ETCHING
D.L.Flamm 35
OPTICAL DIAGNOSTIC TECHNIQUES FOR LOW PRESSURE PLASMA PROCESS
ING
V. M. Donnelly 57
MEASURING EEDF IN GAS DISCHARGE PLASMAS
V. A. Godyak 95
TRANSPORT PHENOMENA IN PLASMA PROCESSING
A. Gras-Marti, J.-A. Valles-Abarca, and J.-C. Moreno-Marin 135
KINETICS OF A LOW-PRESSURE Hz MULTIPOLE DISCHARGE USED FOR GaAS
TREATMENT
J. Bretagne, D. Jacquin, and R. Ferdinand 147
Ar AND Ti EXCITED STATES IN THE VICINITY OF THE SUBSTRATE DURING
MAGNETRON SPUTTERING OF Ti
T. Pech and A. Ricard 151
MODELING OF THE PLASMA NITRIDING PROCESS
J.L. Marchand, H. Michel, D. Ablitzer, M. Gantois, A. Ricard, and J. Szekely 155
PLASMA MEASUREMENTS IN A MAGNETRON SPUTTERING DEVICE
J. B. Almeida, F. Guimareas, and M.M.D. Ramos 159
LASER INDUCED FLUORESCENCE MEASUREMENTS OF ION DISTRffiUTION
FUNCTIONS
J. Goree and M.J. Goeckner 163
LASER INDUCED FLUORESCENCE MEASUREMENTS IN PLASMA ETCHING
PROCESSES
J. P. Booth, G. Hancock, N. D. Perry, and M. L. Toogood 167
EFFECT OF MODULATION ON THE PLASMA DEPOSITION OF HYDROGENATED
AND FLUORINATED SILICON NITRIDE
G. Cicala, D. L. Flamm, D. E. Ibbotson, and J. A. Mucha 171
PARTIAL PRESSURE ANALYSIS OF CFJ Oz PLASMAS
J. C. Martz, D. W. Hess, and W. E. Anderson 175
vi
SURFACE CHARACTERIZATION OF CORONA DISCHARGE TREATED POLY
(ETHYLENE TEREPHTHALATE)
Y. De Puydt, P. Bertrand, Y. Novis, M. Chtaib, P. Lutgen, and G. Feyder 179
THE PHYSICS OF THE SPUTTER EROSION PROCESS
H. M. Urbassek 185
BASIC PHENOMENA IN REACTIVE ETCHING OF MATERIALS
o. Auciello 201
PARTICLE BOMBARDMENT EFFECTS IN THIN FILM DEPOSITION
J. M. E. Harper 251
LOW-ENERGY ION/SURFACE INTERACTIONS DURING FILM GROWTH FROM
THE VAPOR PHASE: EFFECTS ON NUCLEATION AND GROWTH KINETICS,
DEFECT STRUCTURE, AND ELEMENTAL INCORPORATION PROBABILITIES
J. E. Greene, S. A. Barnett, J.-E. Sundgren, and A. Rockett 281
LOW-ENERGY ACCELERATED-ION DOPING OF Si DURING MOLECULAR BEAM
EPITAXY: INCORPORATION PROBABILITIES, DEPTH DISTRIBUTION, AND
ELECTRICAL PROPERTIES
L. C. Markert, J. Knall, J.-P. Noel, M.-A. Hasan, J. E. Greene, J.-E. Sundgren 313
IN SITU SUBSTRATE CHEMICAL ANALYSIS DURING SPUTTER DEPOSITION
M. H.::cq and P. Legrand 317
REACTIVE ION BEAM ETCHING STUDIES OF TUNGSTEN WITH CF USING ION
4
SCATTERING SPECTROSCOPY
T. I. Cox, V. G. I. Deshmukh, and D. G. Armour 319
ESTIMATION OF STRUCTURAL DAMAGE INDUCED BY TECHNOLOGICAL
PROCESSES ON THE SURFACE OF CRYSTALLINE BINARY COMPOUNDS BY X
RAY PHOTOELECTRON DIFFRACTION: APPLICATION TO REACTIVE ION
ETCHING OF GaAs(OOI) SURFACES
J. Olivier, P. Alnot, and R. Joubard 323
IN-SITU XPS STUDIES OF THIN SILICON NITRIDE FILMS ON Ill-V SEMICONDUC
TORS PRODUCED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOUR
DEPOSITION
R.N. S. Sodhi 327
COMPOSmONAL AND STRUCTURAL ANALYSIS OF RF SPUTTERED
HYDROGENATED AMORPHOUS Si1'XGeXA LLOYS
A. Patentalaki, M. Androulidaki, and G. Kiriakidis 331
THIN FILM INHOMOGENEITY CHARACTERIZATION BY ION BEAM TECHNIQUE
N. E. Capuj, N. R. Arista, G. H. Lantchsner, J. C. Eckardt, and M. M. Jakes 335
vii
THEORETICAL ANALYSIS OF THE INFLUENCE OF FOIL INHOMOGENEITIES ON
THE ANGULAR VARIATION OF THE ENERGY- LOSS
N. E. Capuj and M. M. Jakas 339
APPLICATIONS OF PLASMA ETCHING
H. W. Lehmann 345
THE APPLICATION OF PLASMAS TO THIN FILM DEPOSTION PROCESSES
D. M.Mattox 377
PLASMA-ENHANCED CVD OF SILICON-RELATED COMPOUNDS
W. A. P. Claassen and G. M. J. Rutten 401
PLASMA-ASSISTED DEPOSITION OF POLYMERS
R. d'Agostino 425
RBS, SIMS, AES AND ESCA ANALYSIS OF SURFACES
D. G. Armour 457
THE PROCESS TRANSFER OF OXYGEN REACTIVE ION ETCHING OF POLY MIDE
BETWEEN DIFFERENT ETCH EQUIPMENTS
A. J. Hydes, T. I. Cox, D. A. O. Hope, and V. G. I. Deshmukh 499
REACTIVE ION ETCHING OF SILICON CONTAINING RESISTS
M. A. Hartney, D. W. Hess, and D. S. Soane 503
SURFACE TREATMENT OF PP FILMS BY A NON EQUILIBRIUM LOW PRESSURE
PLASMA OF NH3, N2, Ar
V. Andre, F. Tchoubineh, F. Arefi, and J. Amouroux 507
ION BEAM AND PLASMA-INDUCED ETCHING IN STRUCTURING ELECTRONIC
DEVICES
K. Fischer and W. M(jh1 511
PLASMA INDUCED POLYMERIZATION
F. Poncin-Epaillard, J. C. Brosse, J. Bretagne, and A. Ricard 515
TECHNOLOGICAL CONSIDERATIONS ON THIN FILMS PROCESS BASED ON NTa
2
M. Tudanca and F. Lopez 519
SURFACE MODIFICATION OF BIOMATERIALS WITH PLASMA GLOW DIS
CHARGE PROCESSES
E. Piskin, M. Kiremitci, V. Evren, M. Mutlu, A. Oncu, A. Denizli, A. Tuncel, A. I.
Serbetc1i, and E. B. Denkbas 525
RUTHERFORD BACKSCATTERING AND NUCLEAR REACTION ANALYSIS
STUDY OF PLASMA OXIDATION SILICIDES
A. Climent, R. Perez-Casero, J. Perriere, J. P. Enard, and B. Lavemhe 531
viii
RECENT MAGNETRON DESIGN AT MINHO UNIVERSITY - CHARACTERIZATION
F. Guimaraes, J. Almeida, and R. Barral 535
A NOVEL MICROWAVE ION SOURCE AS A NEW TOOL FOR SUBMICRON
ETCHING OF MICROELECTRONIC DEVICES
W. Mohl and K. Fischer 539
LASER COATING OF ENGINEERING MATERIALS FOR INCREASED WEAR
RESISTANCE
M. B. Karamis and B. S. Yilbas 543
A TWO-STAND LABORATORY FACILITY FOR THE STUDY OF LASER SUP
PORTED PLASMA-SURFACE INTERACTION
G. Sliwinksi 547
EFFECTS OF A PARTIAL ORIENTATION OF Cu++ COMPLEXES IN YBaCup7_x
2
PELLETS
A. Bonanno, M. Camarca, R. Bartucci, L. Sportelli, E. Colavita, S. Barbanera, and G.
Balestrino 551
INDEX 555
PREFACE
The study of plasma-material interactions has evolved into a dynamic and important
field of research. An understanding of the basic physical and chemical processes
involved in these interactions is vital to the evolution of microelectronics, fusion and
space technologies, among others. In microelectronics, plasma-assisted etching and film
formation are core technologies required to fabricate today' s large area, high density,
very large scale integrated circuits (VLSI). By the same token, the understanding of
plasma-surface interaction phenomena (e.g., physical sputtering, chemical etching,
plasma-species trapping in solid walls) is crucial to the control of impurity introduction
necessary to make self-sustained fusion reactors work. Finally, plasma interactions with
the surface of spaceships may produce harmful effects, or even jeopardize the mission as
demonstrated in recent flights of the Space Shuttle, where polymeric thermal blankets in
the cargo bay were extensively degraded by etching in the low-earth orbit environment.
The limited subject of plasma-surface interaction phenomena in fusion technology
was treated in a previous NATO school (Canada, 1984). Surprisingly, despite the leading
edge nature of this subject for key technologies, like microelectronics and those related to
the space program, there has been no comprehensive treatment, or interdisciplinary
approach to plasma-material interactions in a school such as an ASI. Additionally, the
microelectronics and space technology communities have no prime international confer
ence series on this subject. As a result, there has been a compartmentalization, with vari
ous topics discussed at unrelated conferences, usually at national levels and only rarely at
an international and interdisciplinary level.
We, therefore, brought together a group of internationally respected lecturers to dis
cuss the fundamental and applied aspects of plasma-surface interaction phenomena
relevant to microelectronics, industrial coatings, and space technologies. Topics
reviewed included: (a) basic processes occurring in low temperature plasmas [physics of
plasma discharges, plasma chemistry], (b) transport and diagnostics processes [optical
emission spectroscopy and probe diagnostics], (c) the interface of the plasmas with solid
state and surface physics, i.e., physical sputtering, chemical etching, trapping of plasma
species in solids exposed to them, and deposition processes. The physics and chemistry
involved in the characterization of surfaces exposed to plasmas was also discussed. Esta
blished analytical techniques (AES, SIMS, RBS, IR, Raman Spectroscopy, etc.) as well
as new potentially powerful ones, like scanning tunneling microscopy were discussed in
relation to their application to study the chemistry and morphology of surfaces at the
atomic scale. Applications of plasma etching and film deposition to microcircuit fabrica
tion were also discussed. With regards to the treatment of pure plasma phenomena, the
subject of this ASI was complementary to a recent Conference on Plasma Physics held in
Kiev (1987).
ix
x
The interdisciplinary character of the subject of this NATO Advanced Study Insti
tute can be best visualized by way of a four pointed star as depicted in the figure below.
PHYSICS
SURFACE MATERIALS
ANALYSIS SCIENCE
CHEMISTRY
This figure represents the necessary interrelations between two basic sciences, i.e.
physics, which involves the study of basic mechanisms in plasma-materials interaction
and the associated solid state modifications, and chemistry, which deals with reactions
and compositional changes of plasmas and solid surfaces exposed to them. The
knowledge obtained via these two basic sciences is integrated with electrical and chemi
cal engineering as a necessary step to plasma processing of materials for microelectron
ics, coatings and space technologies.
It was clear from the invited and contributed presentations that although a whole
body of knowledge exists on the processes described above, there are still many outstand
ing problems that need urgent attention. It is clear now that surfaces exposed to plasmas
are simultaneously irradiated by energetic ions [inert and reactive], sub-eV species [inert
and reactive], electrons, and photons. It has been demonstrated that the simultaneous
impact of these species caused synergistic effects which greatly enhance etching
processes, that are used for patterning microcircuits or other technological applications.
At the same time these effects may be deleterious to materials exposed to fusion plasmas
or plasmas in outer space. We feel that this NATO-ASI has ignited new ideas and colla
boration among the attendees and we hope that an international conference series similar
to that existing in the plasma-materials interaction fusion field will be organized in the
near future.
O. Auciello (Microelectronics Center of North Carolina and North Carolina State
University, USA)
A. Gras Marti (Universitat d'Alacant, Spain)
J.A. Valles Abarca (Universitat d'Alacant, Spain)
D.L. Flamm (AT&T Bell Laboratories and University of California, Berkeley,
USA)
