New Data and Updates for III-V, II-VI and I-VII Compounds

502 Pages·2010·18.602 MB·English

by  B. Hönerlage (auth.), U. Rössler (eds.)

Landolt-Börnstein
Numerical Data and Functional Relationships in Science and Technology
New Series / Editor in Chief: W. Martienssen†
Group III: Condensed Matter
Volume 44
Semiconductors
Subvolume C
New Data and Updates for III-V, II-VI and I-VII Compounds
Editor:
U. Rössler
Authors:
J. Chu, R.P. Devaty, E.C. Fernandes da Silva, J. Gutowski, B. Hönerlage,
F. Matsukura, K. Sebald, T. Voss
ISSN 1615-1925(CondensedMatter)
ISBN 978-3-540-92139-4Springer Berlin HeidelbergNew York
LibraryofCongressCataloginginPublicationData
ZahlenwerteundFunktionenausNaturwissenschaftenundTechnik,NeueSerie
EditorinChief:W.Martienssen†
Vol.III/44C:Editor:U.Rössler
Atheadoftitle:Landolt-Börnstein.Addedt.p.:Numericaldataandfunctionalrelationshipsinscienceandtechnology.
TableschieflyinEnglish.
IntendedtosupersedethePhysikalisch-chemischeTabellenbyH.LandoltandR.Börnsteinofwhichthe6thed.beganpublicationin1950undertitle:
ZahlenwerteundFunktionenausPhysik,Chemie,Astronomie,GeophysikundTechnik.
Vols.publishedafterv.1ofgroupIhaveimprint:Berlin,NewYork,Springer-Verlag
Includesbibliographies.
1.Physics–Tables.2.Chemistry–Tables.3.Engineering–Tables.
I.Börnstein,R.(Richard),1852-1913.II.Landolt,H.(Hans),1831-1910.
III.Physikalisch-chemischeTabellen.IV.Title:Numericaldataandfunctionalrelationshipsinscienceandtechnology.
QC61.235020.12 62-53136
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Editors
U.Rössler
InstitutfürTheoretischePhysik
UniversitätRegensburg
93040Regensburg,Germany
[email protected]
Authors
JunhaoChu BerndHönerlage
NationalLaboratoryforInfraredPhysics IPCMS/GONLO,BP43
ShanghaiInstituteofTechnicalPhysics,CAS 23,rueduLoess
Shanghai200083,China 67034Strasbourgcedex2,France
[email protected] [email protected]
R.P.Devaty F.Matsukura
UniversityofPittsburgh RIECTohokuUniversity
DepartmentPhysicsandAstronomy 2-1-1Katahira
100AllenHall Aoba-ku
Pittsburgh,PA15260,U.S.A. Sendai980-8577,Japan
[email protected] [email protected]
EuziC.FernandesdaSilva K.Sebald
InstitutodeFisica UniversityofBremen
LaboratoriodeNovosMateriaisSemicondutores InstituteofSolidStatePhysics-SemiconductorOptics
UniversidadedeSaoPaulo Otto-Hahn-Allee1
RuadoMatao,travessaR,187 28359Bremen,Germany
05508-900Butanta,SaoPaulo,SP,Brasil [email protected]
[email protected]
T.Voss
JuergenGutowski UniversityofBremen
UniversityofBremen InstituteofSolidStatePhysics-SemiconductorOptics
InstituteofSolidStatePhysics-SemiconductorOptics Otto-Hahn-Allee1
Otto-Hahn-Allee1 28359 Bremen, Germany
28359Bremen,Germany [email protected]
[email protected]
SpringerMaterials Editorial Office
Springer
Tiergartenstr.17,D-69121Heidelberg,Germany
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Preface of the editor
ThelastupdateoftheLandolt-BörnsteinNewSeriesonsemiconductorphysicsandtechnology,con-sistingofthefive
subvolumesIII/41AtoIII/41E,waspublishedintheyearsbetween1998and2002.Insteadofarevisededitionofthe
originalvolumesIII/17AtoIII/17I(publishedbetween1982and1985)andtheirsupplementsIII/22AandIII/22B(pub-
lishedbetween1987and1989)oranewsupplement,thislastupdatefollowedanewconceptofprovidingaCD-ROM
ofeachsubvolumewithallupdatesandarevisedversionofthecorrespondingolddatabesidestheprintedversionofthe
newdata.Thus,allcollecteddataweremadeavailabletotheuserinaverycompactandconsistentform.
Inthemorethansevenyearssincethislastupdate,semiconductorresearchhasbroughtforthnewdataofstandard
semiconductorsand,evenmore,dataonavarietyofnewmaterials,whichbecameoftechnologicalinterest,havebeen
published.Inthemeantime,thepublisherhaddecidedtodeveloptheLandolt-Börnsteindatacollectionintoanelectro-
nicmajorreferencework.Therefore,Springerdecidedin2005tostartanewupdateprojectwiththeintentiontocom-
plete the online database in shorter intervals. The first input, containing data on semiconductors with tetrahedral
coordination of the I-VII, II-VI and III-V compounds as well as of III-VI and IV-VI semiconductors, went online in
2008.Thesedataareavailableonwww.springermaterials.com,wherethesearchandnavigationtoolsoftheplatform
givingaccesstothefullcontentofLandolt-Börnsteinarepresented.Alittlelaterthesedataappearedalsoinprintedform
astwosubvolumesIII/44AandIII/41B:
SubvolumeIII/44A:NewDataandUpdatesforI-VII,III-V,III-VIandIV-VICompounds;
SubvolumeIII/44B: NewDataandUpdatesforII-VICompounds.
The first subvolume III/44A starts with a Systematic of Semiconductor Properties, which should help the
non-specialistusertounderstandthemeaningofthematerialparameters.Newdata,collectedmorerecently,
have been added totheonline version and appear now inprintedform asthe third subvolume:
SubvolumeIII/44C:NewDataandUpdatesforIII-V,II-VIandI-VIICompounds
Also this subvolume could be accomplished only with the diligence and patience of the authors, whose
effortsandexpertisehavetobeacknowledgedinthefirstplace.Everysinglepageanddocumenthadtopass
the visual control of Stefan Scherer and Martin Müller of the Landolt-Börnstein editorial office. Their
effortsinmanaging and accelerating thepublication processdeserve recognition.
Regensburg,December2009 TheEditor
AgBr: heat capacity 1
AgBr: heat capacity
Semiconductors - New Data and Updates for III-V, II-VI and I-VII Compounds
substance: silver bromide (AgBr)
property: heat capacity(thermal and thermodynamic properties)
heat capacityatconstant pressure
Fig.1showsthespecificheatcapacityC ofAgBrasfunctionoftemperatureintherange77…350K[07K].
p
The heat capacity per unit volume at constant pressure (ρC ) = κ/D. (ρ being the density) is determined
p t
from the measured thermal conductivity κ and thermaldiffusivitydata D.
t
100 10.0
AgBr 9.5
90
9.0
80 8.5
mol K)–1] 70 87..05/Rp
pacity C[J(p6500 766...050at capacity C
ecif ic heat ca 4300 eeexxxppp...dddaaatttaaa , [[300.723 C Km]]g layer [53P] 554...505Specif ic he
Sp 20 exp.data, 6.4 mg layer [53P] 4.0
exp.data[33E] 3.5
10 linear f it 3.0
0 2.5 Fig.1. AgBr.SpecificheatcapacityCpofAgBras
0 50 100 150 200 250 300 350 400 functionoftemperature[07K].Thesolidlinegivesa
Temperature T [K] linearfitofthedatapoints.
C isfoundtoremainalmostconstantabove200Kandtohavethevalueof6.6Rat273K,Rbeingthegas
p
constant.
Reference
07K Kamran,K., Anis-ur-Rehman, M., Maqsood, A.: J.Phys.D40(2007) 869.
Landolt-Börnstein DOI:10.1007/978-3-540-92140-0_1
NewSeriesIII/44C #Springer-VerlagBerlinHeidelberg2010
AgBr: thermalconductivity, thermal diffusivity 1
AgBr: thermal conductivity, thermal diffusivity
Semiconductors - New Data and Updates for III-V, II-VI and I-VII Compounds
substance: silver bromide (AgBr)
property: thermal conductivity, thermaldiffusivity(thermal and thermodynamic properties)
thermal conductivity and thermal diffusivity
Fig. 1 shows measured and calculated thermal conductivity κ and thermal diffusivity D data of AgBr as
t
functionof temperaturein therange 77…650 K[07K].
6.0
AgBr
5.5
5.0
k[W(m K)–1]
–1m K)]ms]2–1 44..50 eexxpp..ddaattaa [[0573KP]]
ductivity k [w (–6usivity D [10t332...505 calc. (k~Dt3 [3100 –K6m/T2)s–1]
mal conmaldiff 2.0 eexxpp..ddaattaa [[0573KP]]
TherTher 1.5 calc. (Dt~176 K/T)
1.0
0.5
Fig.1. AgBr.Measured(symbols)andcalculated(full
0 lines)thermalconductivityκandthermaldiffusivityD
0 100 200 300 400 500 600 700 t
dataofAgBrasfunctionoftemperature:fullcircles:
Temperature T [K]
[07K];opencircles:[53P].
ThethermalconductivitydataareingoodagreementtotherelationκT=330W/m.Thethermaldiffusivity
dataofAgBrfittherelationDT=176·10–6m2s–1abovetheDebyetemperature,whichisestimatedto136K
t
[07K].
References
53P Pochapsky,T.E.: J.Chem.Phys.21 (1953) 1539.
07K Kamran,K., Anis-ur-Rehman, M., Maqsood, A.: J.Phys.D40(2007) 869.
Landolt-Börnstein DOI:10.1007/978-3-540-92140-0_2
NewSeriesIII/44C #Springer-VerlagBerlinHeidelberg2010
AgBr: heat of sublimation 1
AgBr: heat of sublimation
Semiconductors - New Data and Updates for III-V, II-VI and I-VII Compounds
substance: silver bromide (AgBr)
property: heat of sublimation (thermal andthermodynamicproperties)
sublimation energy ΔE
sub
(in kJ mol–1)
Physical Property Numerical Values Remarks Ref.
γ-AgBr, zincblende structure
ΔE 169.5 Density functional calculation 05S
sub
α-AgBr, rock salt structure
ΔE 169.5 Density functional calculation 05S
sub
Reference
05S Söhnel, T., Hermann, H., Schwerdtfeger, P.:J. Phys. Chem. B 109(2005) 526.
Landolt-Börnstein DOI:10.1007/978-3-540-92140-0_3
NewSeriesIII/44C #Springer-VerlagBerlinHeidelberg2010
AgBr: effectivemasses 1
AgBr: effective masses
Semiconductors - New Data and Updates for III-V, II-VI and I-VII Compounds
substance: silver bromide (AgBr)
property: effectivemasses (electronic properties)
effectivemassesof electronand hole
TheelectronbandstructureofAgBrintherocksaltphase[07B]hasbeencalculatedintheframeofthefull
potential linearized augmented plane wave method and using a modified generalized gradient approxima-
tion in order to take exchange correlations into account. The effective electron mass is estimated to m =
e
0.285 m and thehole mass m = 1.105 m .
0 h 0
Reference
07B Benmessabih, T., Amrani, B., ElHaj Hassan, F., Hamdache, F., Zoaeter, M.: Physica B 392 (2007)
309.
Landolt-Börnstein DOI:10.1007/978-3-540-92140-0_4
NewSeriesIII/44C #Springer-VerlagBerlinHeidelberg2010