Table Of ContentNanoscaled Semicond uctor-on-Insulator
Structures and Devices
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Series B:Physics and Biophysics
Nanoscaled Semiconductor-on-
Insulator Structures and Devices
Edited by
S. Hall
University of Liverpool
Liverpool, United Kingdom
A.N. Nazarov
Lashkaryov Institute of Semiconductor Physics
NAS of Ukraine, Kyiv, Ukraine
V.S. Lysenko
Lashkaryov Institute of Semiconductor Physics
NAS of Ukraine, Kyiv, Ukraine
Published in cooperation with NATO Public Diplomacy Division
Proceedings of the NATO Advanced Research Workshop on
Nanoscaled Semiconductor-on-Insulator Structures and Devices
Big Yalta, Ukraine
15 – 19 October 2006
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ISBN 978-1-4020-6379-4 (PB)
ISBN 978-1-4020-6378-7 (HB)
ISBN 978-1-4020-6380 -0 (e-book)
Published by Springer,
P.O. Box 17, 3300 AADordrecht, The Netherlands.
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INTRODUCTION
This proceedings volume constitutes an archive of the contributions of the
key-speakers who attended the NATO Advanced Research Workshop on
“Nanoscaled Semiconductor-On-Insulator Structures and devices” held in
the Tourist and Recreation Centre “Sudak” (Crimea, Ukraine) from 15 to 19
October 2006.
The semiconductor industry has sustained a very rapid growth during
the last three decades through impressive technological developments
which have resulted in products with higher performance and lower cost per
function. After many years of development it is now confidently predicted
that semiconductor-on-insulator materials will enter and increasingly be
used by manufacturing industry. The wider use of semiconductor (espe-
cially silicon) on insulator materials will not only enable the benefits of
these materials to be demonstrated but, also, will drive down the cost of
substrates which, in turn, will stimulate the development of other novel
devices and applications. Thus the semiconductor-on-insulator materials of
today are not only the basis for modern microelectronics but also for future
nanoscale devices and ICs. In itself this trend will encourage the promotion
of the skills and ideas generated by researchers in the Former Soviet Union
and Eastern Europe. Indeed, one of the goals of this Workshop is to
promote the development of SOI technologies worldwide.
This volume contains mainly the review manuscrips composed on the
basis of oral and poster papers presented during the four-day meeting,
under the heading of:
• Nanoscaled SOI Material and Device Technologies;
• Physics of Novel Nanoscaled SOI Devices;
• Reliability and Characterization of Nanoscaled SOI devices;
• Theory and Modeling of Nanoscaled Devices.
These high-quality papers were presented by researchers from Japan,
USA, Western Europe and the Eastern European countries of the Former
Soviet Union thereby fulfilling a key objective of the Workshop which was
the development of world-wide contacts between researchers in the
attendees countries.
v
vi INTRODUCTION
The meeting thus successfully achieved its scientific and networking
goals and the attendees wish to express their gratitude to the NATO
Programme Security through Science and Network of Excellence Project
of European Community “Silicon-Based Nanodevices”, whose financial
support made the meeting possible; and National Academy of Sciences of
Ukraine, Ministry of Science and Education of Ukraine and the Lashkaryov
Institute of Semiconductor Physics, NASU who provided local support. We
would like to thank the Agency of International Cooperation “Optima”
whose Director Mariya Miletska helped us to organize this Workshop in a
professional manner. Our sincere gratitude also goes to Dr. Ya. Vovk,
A. Rusavsky, Dr. V. Kilchytska, V. Stepanov, V. Torbin, Dr. A. Stronskii,
Dr. Yu. Gomenyuk, Dr. I. Osiyuk, Dr. T. Rudenko, Dr. I. Tyagulskii,
V. Smirnaya, J. Cowan and A. Winker for their clerical and technical assistance.
A final special thanks to Mr. Yurii Houk for his dedication in compiling this
book and for many other practical contributions.
Steve Hall Alexei Nazarov and
Liverpool, United Kingdom Vladimir Lysenko
Kyiv, Ukraine
INTRODUCTION vii
viii INTRODUCTION
INTRODUCTION ix
CONTENTS
INTRODUCTION..............................................................................v
Nanoscaled SOI Material and Device Technologies
Status and trends in SOI nanodevices.................................................3
F. Balestra
Non-planar devices for nanoscale CMOS........................................19
M.C. Lemme, H.D.B. Gottlob, H. Kurz
High-κ dielectric stacks for nanoscaled SOI devices.......................33
S. Hall, O. Buiu, I.Z. Mitrovic, Y. Lu, W.M. Davey
Nanoscaled semiconductor heterostructures for CMOS
transistors formed by ion implantation and hydrogen transfer.........59
V. Popov, I. Tyschenko, A. Cherkov, M. Voelskow
Fluorine –vacancy engineering: A viable solution for dopant
diffusion suppression in SOI substrates............................................73
H.A.W. El Mubarek and P. Ashburn
Suspended Silicon-On-Insulator nanowires for the fabrication
of quadruple gate MOSFETs............................................................89
V. Passi, B. Olbrechts, J.-P. Raskin, J. Bolten,
T. Mollenhauer, T. Wahlbrink, M.C. Lemme, H. Kurz
Physics of Novel Nanoscaled SemOI Devices
Integration of silicon single-electron transistors operating at
room temperature..............................................................................97
T. Hiramoto
SiGe nanodots in electro-optical SOI devices................................113
A.V. Dvurechenskii, A.I. Yakimov, N.P. Stepina,
V.V. Kirienko, P.L. Novikov
Nanowire quantum effects in trigate SOI MOSFETs.....................129
J.-P. Colinge
xi
