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About Nanoscale Transistors: Device Physics, Modeling, and Simulation
This document summarizes key aspects of Chapter 4 from the book "Nanoscale Transistors: Device Physics, Modeling, and Simulation" by Mark Lundstrom. 1) MOSFETs in practice operate below the ballistic limit due to carrier scattering within the device. Numerical simulations show that typical n-channel devices deliver about half the ballistic current while p-channel deliver a third. 2) Scattering can be described by a transmission coefficient T, where T<1 with scattering. The transmission coefficient models the fraction of current transmitted across the channel versus backscattered. 3) Simulations show that with scattering, the carrier distribution at the top of the barrier no longer consists of two equilibrium
Detailed Information
| Author: | ['akash'] |
|---|---|
| Publication Year: | 2020 |
| Pages: | 26 |
| Language: | English |
| Format: | |
| Price: | FREE |
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