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About Nanoscale Transistors: Device Physics, Modeling and Simulation
This document summarizes a chapter from the book "Nanoscale Transistors: Device Physics, Modeling and Simulation" that develops a scattering theory of the MOSFET. It begins by comparing measured MOSFET performance to the ballistic limit, showing devices operate at around half the ballistic current. It then introduces a transmission coefficient T to describe the fraction of carriers that transmit across the device in the presence of scattering. The chapter uses numerical simulations to show that while scattering degrades device performance, MOS electrostatics ensure carrier density at the top of the barrier remains constant. It develops a simple model to describe MOSFET operation in the presence of scattering using the transmission coefficient T.
Detailed Information
| Author: | ['Bhaskar K'] |
|---|---|
| Publication Year: | 2020 |
| Pages: | 27 |
| Language: | English |
| Format: | |
| Price: | FREE |
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