MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

209 Pages·2014·3.695 MB·English

by  Viranjay M. Srivastava, Ghanshyam Singh (auth.)

ACSP · Analog Circuits And Signal Processing
Viranjay M. Srivastava
Ghanshyam Singh
MOSFET
Technologies for
Double-Pole Four-
Throw Radio-
Frequency Switch
Analog Circuits and Signal Processing
Series Editors:
Mohammed Ismail,The OhioStateUniversity
MohamadSawan, E´cole Polytechniquede Montre´al
For furthervolumes:
http://www.springer.com/series/7381

Viranjay M. Srivastava (cid:129) Ghanshyam Singh
MOSFET Technologies
for Double-Pole Four-Throw
Radio-Frequency Switch
ViranjayM.Srivastava GhanshyamSingh
AssistantProfessor Professor
DepartmentofElectronics DepartmentofElectronics
andCommunicationEngineering andCommunicationEngineering
JaypeeUniversityofInformation JaypeeUniversityofInformation
Technology Technology
Solan,HimachalPradesh Solan,HimachalPradesh
India India
ISBN978-3-319-01164-6 ISBN978-3-319-01165-3(eBook)
DOI10.1007/978-3-319-01165-3
SpringerChamHeidelbergNewYorkDordrechtLondon
LibraryofCongressControlNumber:2013946571
©SpringerInternationalPublishingSwitzerland2014
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Contents
1 Introduction........................................................... 1
1.1 TransceiverSystems.............................................. 2
1.2 Radio-FrequencySwitches........................................ 5
1.3 Radio-FrequencyMOSFETs...................................... 7
1.4 IssuesofRadio-FrequencyMOSFETModeling................... 9
1.5 Double-GateMOSFET........................................... 13
1.6 CylindricalSurroundingDouble-GateMOSFET.................. 15
1.7 HafniumDioxide-BasedMOSFET................................ 16
1.8 ImageAcquisitionoftheMOSFETs.............................. 16
1.9 Conclusion........................................................ 16
References............................................................. 17
2 DesignofDouble-PoleFour-ThrowRFSwitch....................... 23
2.1 Introduction....................................................... 23
2.2 ComparisonofVariousSwitches.................................. 23
2.2.1 PINDiodeSwitch......................................... 24
2.2.2 GaAsFETSwitch......................................... 24
2.2.3 MESFETSwitch.......................................... 24
2.2.4 MOSFETSwitch.......................................... 25
2.2.5 MEMSSwitch............................................ 25
2.3 RFTransceiverSystems.......................................... 26
2.4 RFTransceiverSwitch............................................ 28
2.5 DesignofCMOSInverterforRFSwitch.......................... 29
2.6 ConfigurationofSwitches......................................... 31
2.6.1 Single-PoleSingle-ThrowSwitch.......................... 31
2.6.2 Single-PoleDouble-ThrowSwitch......................... 32
2.6.3 Double-PoleDouble-ThrowSwitch........................ 33
2.6.4 Double-PoleFour-ThrowSwitch.......................... 33
2.7 DesignofDP4TRFSwitchBasedonSingle-GateMOSFET...... 34
2.8 OperationalCharacteristicsofDP4TCMOSSwitch............... 36
v
vi Contents
2.9 RFSwitchPerformanceParameters............................... 37
2.9.1 InsertionLoss............................................. 38
2.9.2 ReturnLoss............................................... 38
2.9.3 Isolation................................................... 38
2.9.4 RFPowerHandling....................................... 38
2.9.5 Linearity.................................................. 39
2.9.6 TransitionTime........................................... 39
2.9.7 SwitchingSpeed........................................... 39
2.10 TopologiesforDP4TSwitches.................................... 39
2.11 Conclusions....................................................... 40
References............................................................. 41
3 DesignofDouble-GateMOSFET..................................... 45
3.1 Introduction....................................................... 45
3.2 DesignProcessofDouble-GateMOSFET......................... 48
3.3 EffectsofDouble-GateMOSFETontheLeakageCurrents....... 50
3.3.1 SubthresholdLeakage..................................... 51
3.3.2 GateLeakage.............................................. 51
3.3.3 BandtoBandTunnelingofElectrons...................... 51
3.4 PerformanceImprovementofDGMOSFETover
SGMOSFET..................................................... 53
3.5 ResistiveandCapacitiveModelofDGMOSFET
andSGMOSFET................................................. 56
3.6 CharacteristicsoftheDGMOSFETwithAspectRatios........... 63
3.7 DesignofDGMOSFETwithSeveralGate-Fingers............... 66
3.8 ModelofSeriesandParallelCombination
forDouble-GateMOSFET........................................ 73
3.9 Conclusions....................................................... 75
References............................................................. 76
4 Double-PoleFour-ThrowRFSwitchBased
onDouble-GateMOSFET............................................ 85
4.1 Introduction....................................................... 85
4.2 BasicsofRadioSystemDesign................................... 85
4.2.1 PathLoss.................................................. 85
4.2.2 GainCascade.............................................. 86
4.2.3 1dBCompressionPoint................................... 86
4.2.4 Third-OrderInterceptPoint................................ 87
4.2.5 ThermalNoise............................................ 87
4.2.6 NoiseFigure.............................................. 88
4.2.7 PhaseNoise............................................... 88
4.3 DesignofDP4TDGRFCMOSSwitch........................... 88
4.4 CharacteristicsofDP4TDGRFCMOSSwitch................... 90
Contents vii
4.5 EffectiveON-StateResistanceofDP4TDGRFCMOSSwitch. . . 94
4.5.1 ParallelCombinationofResistanceinaDevice........... 96
4.5.2 ChoosingTransistorwithLargeMobility.................. 96
4.5.3 KeepingV (cid:1)V Large.................................... 96
gs th
4.5.4 AspectRatioofaTransistor............................... 96
4.6 AttenuationofDP4TCMOSSwitch.............................. 97
4.6.1 CausesofAttenuation..................................... 100
4.6.2 CounteractingAttenuation................................. 100
4.7 OFF-Isolation..................................................... 101
4.8 ResistiveandCapacitiveModelofDP4TDGRF
CMOSSwitch.................................................... 101
4.9 SwitchingSpeedofDP4TDGRFCMOSSwitch................. 103
4.10 S-ParametersofDP4TDGRFCMOSSwitch..................... 103
4.11 Conclusions....................................................... 106
References............................................................. 107
5 CylindricalSurroundingDouble-GateRFMOSFET................ 111
5.1 Introduction....................................................... 111
5.2 AnalysisofCSDGRFMOSFET.................................. 114
5.3 FabricationProcessforCSDGRFMOSFET...................... 117
5.4 CharacteristicsofCSDGMOSFET............................... 118
5.5 ResistiveandCapacitiveModeloftheCSDGMOSFET.......... 122
5.6 ExplicitModelofCSDGMOSFET............................... 129
5.7 GateLeakageCurrent,NoiseModel,andShortChannel
EffectsforCSDGMOSFET...................................... 131
5.8 CrosstalkinCSDGMOSFETModel............................. 132
5.9 AdvantagesoftheCSDGMOSFETModel....................... 135
5.10 Conclusions....................................................... 137
References............................................................. 138
6 HafniumDioxide-BasedDouble-PoleFour-ThrowDouble-Gate
RFCMOSSwitch..................................................... 143
6.1 Introduction....................................................... 143
6.2 MOSFETModelwithHfO ....................................... 146
2
6.3 FabricationProcessofHfO -BasedDGMOSFET................. 147
2
6.4 ParametersofHfO -BasedMOSFET............................. 149
2
6.4.1 OxideCapacitanceperUnitArea.......................... 149
6.4.2 ThresholdVoltage......................................... 149
6.4.3 DrainCurrents............................................ 149
6.4.4 BodyBiasEffect.......................................... 150
6.4.5 Resistances................................................ 150
6.4.6 Capacitances.............................................. 150
6.4.7 FigureofMerit............................................ 151
6.5 SwitchingCharacteristicsofHfO -BasedMOSFET............... 151
2
6.5.1 FallTime.................................................. 151
6.5.2 RiseTime................................................. 152
viii Contents
6.5.3 MaximumSignalFrequency............................... 152
6.5.4 PropagationDelay......................................... 152
6.5.5 PowerDissipation......................................... 153
6.6 DP4TSwitchDesignwithHfO -BasedDGMOSFET............. 153
2
6.7 CharacteristicsofDP4TSwitchwithHfO -Based
2
DGMOSFET..................................................... 155
6.7.1 DrainCurrentAnalysis.................................... 156
6.7.2 ON/OFFRatioandInsertionLoss......................... 156
6.7.3 ON-Resistance(R )andAttenuation..................... 157
ON
6.7.4 Flat-BandCapacitanceandDynamicPower............... 159
6.7.5 DebyeLengthCalculationandMobility................... 159
6.7.6 PotentialBarrier........................................... 160
6.8 Conclusions....................................................... 160
References............................................................. 161
7 TestingofMOSFETsSurfacesUsingImageAcquisition............. 165
7.1 Introduction....................................................... 165
7.2 ProposedModelfortheImageAcquisitionofMOSFETs......... 166
7.2.1 Preprocessing............................................. 167
7.2.2 ImageSensor.............................................. 167
7.2.3 DiscreteFourierTransform................................ 169
7.2.4 FilterFunction............................................ 169
7.2.5 InverseDiscreteFourierTransform........................ 170
7.2.6 Postprocessing............................................ 170
7.2.7 ImageEnhancement....................................... 170
7.3 ImageAnalysis................................................... 171
7.4 Conclusion........................................................ 172
References............................................................. 173
8 ConclusionsandFutureScope........................................ 177
8.1 Conclusions....................................................... 177
8.2 FutureScope...................................................... 179
References............................................................. 181
AppendixA ListofSymbols............................................ 183
AppendixB ListofDefinitions.......................................... 187
AppendixC OutcomesoftheBook..................................... 191
AbouttheAuthors........................................................ 193
Index...................................................................... 195
List of Figures
Fig.1.1 SimpleRFtransceiverarchitecture................................... 3
Fig.2.1 Radio-frequencydesignhexagon..................................... 26
Fig.2.2 Aradiofront-endblockdiagramwith(a)theintegrationof
transceiverswitchandmatchingnetworks,(b)simplified
schematicofatransceiverswitch,and(c)typicaltransistor
basedtransceiverswitch............................................... 27
Fig.2.3 SchematicoftheCMOS(a)internalstructure
and(b)invertercircuit................................................. 30
Fig.2.4 Schematicofthe(a)SPDT,(b)DPDT,and(c)DP4T............. 32
Fig.2.5 DP4TCMOStransceiversswitchwithsingle-gatetransistor...... 34
Fig.2.6 Schematicofthe(a)basicSGMOSFETand(b)DP4TSG
RFCMOSswitch...................................................... 35
Fig.2.7 ProposedDP4Tswitchwithtwotransistors......................... 35
Fig.2.8 ProposedDP4Tswitchlayoutwithtwotransistors................. 37
Fig.3.1 Schematicofthebasicn-typedouble-gateMOSFET.............. 46
Fig.3.2 Layoutof(a)DGMOSFETand(b)SGMOSFET................. 54
Fig.3.3 Outputvoltagewithgateandcontrolvoltageof(a)DG
MOSFETand(b)SGMOSFET...................................... 55
Fig.3.4 Draincurrentcharacteristicsof(a)DGMOSFETand
(b)SGMOSFET....................................................... 57
Fig.3.5 Voltagegainof(a)DGMOSFETand(b)SGMOSFET.......... 58
Fig.3.6 Layoutof(a)n-typeDGMOSFETand(b)p-typeDG
MOSFET................................................................ 59
Fig.3.7 TheCircuitModelsof(a)DGMOSFETand(b)SGMOSFET
operatingasaswitchatON-state..................................... 60
Fig.3.8 Effectoftheaspectratio(whenitis2000)onthecharacteristics
ofDGMOSFET(a)draincurrentwithgatetosourcevoltage
and(b)thresholdvoltagewiththelength(nm)ofthechannel.... 64
ix