Millimeter-Wave Low Noise Amplifiers

344 Pages·2018·10.42 MB·English

by  Mladen Božanić

Signals and Communication Technology
Mladen Božanić
Saurabh Sinha
Millimeter-
Wave Low
Noise
Amplifiers
Signals and Communication Technology
More information about this series at http://www.springer.com/series/4748
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Mladen Bo ani Saurabh Sinha
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Mladen Božanić Saurabh Sinha
University of Johannesburg University of Johannesburg
Johannesburg Johannesburg
SouthAfrica SouthAfrica
ISSN 1860-4862 ISSN 1860-4870 (electronic)
Signals andCommunication Technology
ISBN978-3-319-69019-3 ISBN978-3-319-69020-9 (eBook)
https://doi.org/10.1007/978-3-319-69020-9
LibraryofCongressControlNumber:2017955276
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Preface
In theage wheretelecommunicationhas become a standard, almostevery portable
devicehassomekindoftransmitterandreceiverallowingittoconnecttoacellular
network or available Wi-fi networks. We are also driving cars that are smarter,
equippedwithnewtechnologies,suchasradarsforcollisiondetection.Othertypes
of radars are used in both civilian and military applications. Nowadays, we even
receive signals from satellites on our phones from global positioning systems. The
spectrum around us is full of transmitted signals waiting to be received. Current
trends toward increased wireless connectivity and the need to stay connected
everywhereandatalltimescallforextremelyhighdatarates.Intheworldoftoday,
most wireless networks operate in frequency bands measured in low gigahertz
(GHz).Typically,thisisdonethroughchannelswithmoderatebandwidth.Tokeep
upwiththetrendsofincreaseddatatransmissionrates,newandinnovativeideasare
needed. Part of research efforts is directed at increasing the bandwidth of the
channelsthatareusedforwirelesscommunication.Oneoftheareasofinvestigation
istransmissioninthemillimeter-waveregime,rangingfrom30to300GHz,where
there is an abundance of bandwidth.
Transmission in the millimeter-wave part of the spectrum comes with much
greaterchallengesthan,forexample,intheradiofrequency(RF)ormicrowavepart
of the spectrum. Receiving the transmitted signal poses a whole new set of chal-
lenges. The low-noise amplifier (LNA) is the first component that appears in the
front ends of most microwave and millimeter-wave receivers after an antenna
(except, perhaps, a low-loss bandpass filter for signal selection). The performance
of an RF and millimeter-wave receiver is therefore largely dependent on the per-
formance of the LNA that is used.
Primarily,theLNAistaskedwithamplifyingasignalwhileintroducingaslittle
noiseintothesignalaspossible.Thisisanecessity,becausethesignalreceivedby
theantennaisalreadysubmergedinnoise;thusbeforethesignalcanbeprocessed,
it needs to be amplified with the smallest possible amount of additional noise
introduced in this process. As technologies such as silicon-germanium BiCMOS
and Silicon CMOS continue to evolve, so too does the number of low-cost,
high-performance transceiver systems that operate in the millimeter-wave region.
v
vi Preface
Most attempts to realize these transceiver systems are in integrated circuits (ICs),
which offer the benefits of reduced size and lower cost.
The purpose of this book is twofold. The first goal of the book is to bring
together the theory behind millimeter-wave circuit operation with the theory of
low-noise amplification. Its second goal is to present new research in this multi-
disciplinary field, by dissecting the common LNA configurations and typical
specifications into parts,which arethen optimizedseparately overseveralchapters
to suggest improvements in the current state-of-the-art designs.
This, therefore, allows for the book to be divided into two parts, with Chap. 1
servingastheintroductiontoresearch.ThefirstpartcontextualizesLNAtheoryand
supporting multidisciplinary concepts, while the second part deals with the state
of the art in LNA research for the millimeter-wave regime and somewhat more
advanced topics associated with LNAs.
Chapter 1 gives the reader ample background on the importance of LNAs and
some of the challenges that are unique to millimeter-wave research, and serves to
formulate the research questions and establish this book as a comprehensive
research resource for LNAs that operate in the millimeter-wave regime.
Part I presents a detailed analysis of the current body of knowledge when it
comes to LNAs, specifically for millimeter applications. This includes detailed
analysis of two-port modeling, practical means of amplifier analysis, gain equa-
tions, stability issues, various noise aspects, broadband techniques, and amplifier
linearity. This is complemented by some telecommunication aspects associated
withLNAs,includingplacingthemillimeter-waverangeinthecontextoftheother
transmission bands and a detailed review of millimeter-wave prospects, investiga-
tion into current antenna efforts and modulation schemes. Also in Part I, the
technologies for LNA implementations are discussed. The latest developments in
various high-fT and fMAX transistors are investigated in an attempt to evaluate
suitable semiconductor devices for LNA implementation at millimeter-wave fre-
quencies. This is followed by the complete small-signal model analysis of both
MOSFETs (and variations thereof) and HBTs. Transistor noise modeling, para-
mount for LNAs, is also discussed together with substrates for discrete LNA
implementations. Furthermore, the feasibility of passives at frequencies up to
millimeter-wave bands is presented. This refers to both lumped passives (resistors,
capacitors, inductors) and transmission line passives, with some innovative ideas.
Traditionally, lumped passives have been unsuitable for millimeter-wave because
of their high parasitics, but with recent technology improvements, the use of
lumped passives is also possible and is discussed at some length. Finally, various
LNAconfigurationsandthedesigntheoryofthese,devisedfromfirstprinciplesof
amplifier operation, are discussed. Techniques such as simultaneous matching for
power and noise, as well as bandwidth enhancement, are discussed for both nar-
rowband and wideband applications.
In Part II, state-of-the-art LNA configurations and means for their deployment
are discussed. Some complex practical LNA configurations are looked at, and the
latestresearchefforts,withthefocusonlinearizationandoptimization,exclusively
in the millimeter-wave regime, are presented. Weaknesses of state-of-the-art
Preface vii
configurationsareconsidered,therebyopeningupopportunitiesforlookingatways
of optimizing these state-of-the-art configurations. The focus then shifts toward
research areas that are still under development. The topics include the influence of
wavelength, layout, cross-talk, bonding, and packaging onto LNA performance,
amongothers.Advancedfabricationtechnologiesusedtodecreasetheparasiticsof
passive and active devices and therefore optimize circuits such as LNAs are also
explored. Different packaging technologies such as silicon-on-chip and
silicon-on-package are discussed as alternatives to IC implementation.
Minimizationoftheparasiticeffectsofpassivesbyintroducinginnovativeideasfor
their construction is another of the topics explored here. Alternative design
methodologies, such as LNA/antenna co-design, are considered. Part II also looks
atthecurrentextentandavailabilityofelectronicdesignautomation(EDA)foruse
when designing LNAs. Ongoing research efforts into automated LNA design and
optimization are furthermore investigated. A number of EDA options for
high-quality passive components (inductors), matching, LNAs, and even complete
receivers are proposed. Finally, remaining research gaps in LNA research for the
millimeter-wave regime and future directions are explored. The book concludes
with the authors’ proposal for streamlined automated LNA design flow, which
focuses on the design of the LNA as a collection of highly optimized subsystems
(parts).
The authors would like to recognize Dr. Riëtte de Lange, Director of Research
Productivity & Improvement of Staff Qualifications, Strategic Initiatives and
Administration, University of Johannesburg, South Africa, for her coordination.
Furthermore, the authors would like to recognize the support of technical
reviewers, as well as language and graphic editors, who’ve all contributed to this
process. We value the system of scholarly peer review and the approach that this
adds to the production of research text that adds to the body of scientific
knowledge.
Johannesburg, South Africa Mladen Božanić
Saurabh Sinha
About the Authors
MladenBožanić,SMIEEE obtainedhisB.Eng.(withdistinction),B.Eng.(Hons)
(with distinction) andPh.D.degreesinElectronic EngineeringfromtheUniversity
ofPretoria(UP)in2006,2008and2011respectively.In2008,hejoinedAzoteq,a
fabless IC design company originating in South Africa with where he has been
responsible for the silicon-level design, simulation characterization design for
testability (DFT) of various analog, RF, digital and mixed-mode circuits. While
activelyworkingintheindustry,healsoparticipatesinresearchactivities,currently
withtheUniversityofJohannesburg(UJ)whereheisservingasaSeniorResearch
Fellow.Since 2011, Dr. Božanić has been fulfilling a role of a Specialist Editor of
South African Institute of Electrical Engineers (SAIEE). He is a recipient of
SAMESAwardandCEFIMFellowshipAward,andanauthororco-authorofover
20peer-reviewedjournalandconferencearticles,onebookchapterandtwobooks.
Saurabh Sinha, SMIEEE, FSAIEE, FSAAE obtained his B.Eng., M.Eng., and
Ph.D. degrees in Electronic Engineering from the University of Pretoria (UP),
South Africa. He achieved both his B.Eng. and M.Eng. with distinction. As a
published researcher, he has authored or co-authored over 100 publications in
peer-reviewed journals and at international conferences. In addition, he is the
managing editor of the South African Institute of Electrical Engineers (SAIEE)
Africa Research Journal. Prof. Sinha served the UP for over a decade, his last
servicebeingasDirectoroftheCarlandEmilyFuchsInstituteforMicroelectronics,
Department of Electrical, Electronic and Computer Engineering. On 1 October
2013, Prof. Sinha was appointed as Executive Dean of the Faculty of Engineering
and the Built Environment (FEBE) at the University of Johannesburg (UJ). Prof.
Saurabh Sinha is the 2014–2015 Vice-President, IEEE Educational Activities and
serves on the IEEE Board of Directors.
ix
Contents
1 Introduction and Research Impact . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 Low-Noise Amplifier Research Contextualization:
A Transmitter and Receiver System. . . . . . . . . . . . . . . . . . . . . 3
1.1.1 Transmitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.1.2 The Receiver and the Role of a Low-Noise
Amplifier. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.2 Significance of Active and Passive Devices for Low-Noise
Amplifier Research . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.3 Significance of Device Packaging at
Millimeter-Wave Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
1.4 Practical Research Focus: Applications of Millimeter-Wave
Low-Noise Amplifiers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
1.5 Identifying Research Gaps: Fundamental Principles
of Operation of Low-Noise Amplifiers. . . . . . . . . . . . . . . . . . . 11
1.5.1 Low-Noise Amplifier Topologies . . . . . . . . . . . . . . . . 11
1.5.2 Gain of the Low-Noise Amplifier . . . . . . . . . . . . . . . . 14
1.5.3 Noise in Low-Noise Amplifiers. . . . . . . . . . . . . . . . . . 14
1.5.4 Power Consumption and Efficiency . . . . . . . . . . . . . . . 14
1.5.5 Reverse Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
1.5.6 Impedance Matching . . . . . . . . . . . . . . . . . . . . . . . . . 16
1.5.7 Bandwidth and Gain Flatness . . . . . . . . . . . . . . . . . . . 16
1.5.8 LNA Sensitivity. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
1.5.9 LNA Selectivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
1.5.10 Low-Noise Amplifier Linearity . . . . . . . . . . . . . . . . . . 18
1.5.11 The Role of Electronic Design Automation . . . . . . . . . 18
1.6 Research Questions: Low-Noise Amplifier for
Millimeter-Wave Applications . . . . . . . . . . . . . . . . . . . . . . . . . 19
1.7 Contribution to the Body of Knowledge. . . . . . . . . . . . . . . . . . 20
xi