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About Lecture 4 - Wafer Clean
The lecture discusses wafer cleaning and contamination removal. It introduces common contaminants like particles, organics, and metals that can degrade device performance. The RCA cleaning process is described as the standard method to remove organics, heavy metals, and alkali ions using solutions of H2SO4/H2O2, HF/H2O, NH4OH/H2O2/H2O, and HCl/H2O2/H2O. Ultrasonic agitation is used to dislodge particles during cleaning. The chemistry of the cleaning process is modeled to explain how oxidizing solutions drive metals from wafer surfaces. Methods for removing photoresist, particles, and minimizing surface roughness are
Detailed Information
Author: | ['image05'] |
---|---|
Publication Year: | 2018 |
Pages: | 24 |
Language: | English |
Format: | |
Price: | FREE |
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