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About Lecture 10 - Dry Etching PDF
This document discusses different dry etching techniques used in microelectromechanical systems (MEMS) fabrication. It describes vapor phase etching as a non-plasma process using etchants like xenon difluoride or vapor HF. Ion milling uses physical bombardment alone while reactive ion etching (RIE) generates plasma radicals to etch in an anisotropic manner, such as using CF4 or SF6 for silicon. Deep RIE (DRIE) further improves anisotropy using cryogenic cooling and alternating etch/passivation cycles like the Bosch process to achieve high aspect ratios over 500 micrometers depth.
Detailed Information
| Author: | ['Siddhant Modi'] |
|---|---|
| Publication Year: | 2016 |
| Pages: | 7 |
| Language: | English |
| Format: | |
| Price: | FREE |
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