Table Of Content~iW.i?$ion of substances
‘*x
Volumes III/& III/l0 Structure Data of Organic eh’als
Organic compounds .*+
Elemento-organic compounds
Salts with at least one organic substituent
Coordination compounds with at least one organic substituent
Part III/5a: C.eC,,; PartIII/5b; C14..C120
PartIII/lOa; C.C,,; Part III/lob: C,,...C,,,
Exceptions: Proteins are not included. Cyanides of metals are treated in Vol. 111/7.
Volumes III/6, III/14 Structure Data of Elements and IntermetaUic Phases
Elements and all inorganic phases which do not contain 0, N, F, Cl, Br, I, At and do not belong
to volume III/S, III/lo:
Elements (as well as solid solutions of “permanent” gases)
Borides (systems containing B, B-C, B-H but not 0, N or a halogen)
Carbides (systems containing C but not B, N, 0 or a halogen, and carbohydrides)
Hydrides (systems containing H but not B, C, N, 0 or a halogen)
Intermetallic and analogous phases (all systems not containing B, C, H, N, 0 or a halogen)
-.
V~IUL 21 I C;ysti Structure ‘Datao f Inorganic Compounds
This volume includes all inorganic compounds which contain QI least one of the elements F, Cl,
Br, I, 0, N, P and cunnot be termed as organic compounds in the senseo f volume III/S.
The compounds are ordered according to key elements.
Key elements: F, Cl, Br, I (VII. Main Group)/Halides and complex halides Parta
Key element: 0 Partbl, Partb2
Key elements: S, Se, Te Partb3
Key element : N partci
Key elements: P, As, Sb, Bi Part c2
Key element : C Partc3
Key element: Si Partdla, Partdlp
Key elements: Ge, Sn, Pb Partdly
Key elements: B, Al, Ga, In, Tl, Be Part d2
Key elements: dg-, d”-, d’... d3-, f-elements Part e
Key elements: d4.. . da-elements Part f
References for III/7 Part g
Comprehensive index for volume III/7 Parth
Volume III/8 Epitaxy Data of Inorganic and Organic Crystals
In indefinite cases,t he indexes of substancesi n III/Sb, 111/7h, III/lob must be consulted.
Arrangement of the key elements within the subvolumes 111/7a -01 11/7f
l
Anordnung der Schliisselelementei n den Teilbiinden III/7 a *I II/7 f
l l
llI/7d llI/‘lb lu/ la
H He
I
Li I Be Ne
1 =
No Mg I llu7f I ! Ar
Br Kr
-J Xe
PO At Rn
JJu7e
L
-Ce - Pr -Nd -Pm -Sm -Eu -Gd ----lb -0y -Ha -Er --Tm-Vb -1u
-1h -Pa - IJ -Np -Pu -Am --Cm --Bk -Cf -Es -Fm +d -No -1w
I
llI/?g : References forIU/7
lZ/7h : ComprehensiveI ndex for lU/7
LANDOLT-BijRNSTEIN
Numerical Data and Functional Relationships
in Science and Technology
New Series
Editors in Chief: K.-H. Hellwege . 0. Madelung
Group III: Crystal and Solid State Physics
Volume 7
Crystal Structure Data of Inorganic Compounds
Wolfgang Pies . Alarich Weiss
Part d
Key Elements: Si, Ge, Sn, Pb; B, Al, Ga, In, Tl; Be
d 1: Key Elements Si, Ge, Sn, Pb
d 1 ,!?:K ey Element Si (Substance Numbers d 1169...d 2377)
In Cooperation with Gerhard Pieper
Editors: K.-H. Hellwege and A.M. Hellwege
Springer-Verlag Berlin Heidelberg NewYork . Tokyo
l l
in xicncc and tcchnolop!
NT: Lxndolt. llxnr [Bcy 1: PT L;lndolr-Bi~rnFrcin. h’.S. ~Gcs~n~thrsg.: K.-II. flcllwcgc: 0. Mxdclun:. Gruppc 3. Krictall-
und Fc<lkiirpcrphyiI, Bd 7. Krisr:Illclr~lhrurd;lrcn ;morg:mischcr Vcrhindungcn /Wolfpng kc. Alarich U’ci~s flrsg K.-H.
Ilcllucy II. A hl tlcllnc:c Tcil d. Scl~lii~crlclrmcn~r: Si. Gc. Sn. Ph: B. Al. G:I. In. TI: DC. 1. Schliiccelclcmcn~c Si. Gc. Sn.
Pb. /I. Si (Suh~t;ln~nummcrn dl 169~.~d2777) ‘in Zuwmmcn:lrhcit mit Gcrhard Piepcr. 1985.
ISBN 3-540-13930-3 Berlin, Hcidclbcrg. New York. Tokyo
ISBN o-387-13930-3 New York, Hcidclbcrg, Berlin. Tokyo
NE’ Ilollwegc. Karl-llcinr [Ilrsg.]: Picc. H’olfgany [Mitvcrf.]
This Iyork is subject to copyright. All rights arc rcscrvcd. whcthcr the whole or part of
the material is conccrncd specifically those of translation. reprinting. rcusc of illustrations,
brondcastin_r. reproduction by photocopying machine or similar mcanx. and storage in data
banks.
Under 8 54 of the Gcrm:ln Copyright Law whcrc topics arc made for other than private
use a fee is paynblc to ‘Vcrwcrtungsgcscllschaft Wart’ Munich.
8 by Springer-Vcrlag Berlin-Hcidclbcrg 1985
Printed in Germany
The use of rcgistcrcd names. tradcmorks. etc. in this publication dots not imply, even in
the absence of a specific statcmcnt. that such names arc cxcmpt from the rclcvant protcctivc
laws and regulations and thcrcforc free for gcncral USC.
Typcsctting: Uni\usit~itsdruckcrci H. Stiirtz AG. Wiirzburg: printing: Druckhaus Langcn-
schcidt KG. Berlin: bookbinding: Liidcritz & Baucr-GmbH. Berlin
2163/3020-543210
Preface
The subject of volume III/7 “Crystal Structure Data of Inorganic Compounds”
covers a broad field. In order to produce handy books and to publish each of them
as soon as possible, the volume had to be divided into a series of several subvolumes
111/7a,b , ..., h and some of these even into several parts (see the survey on the inside
of the front cover). Most of them have appeared in the last years. Only part 111/7dl,
devoted to the key elements Si, Ge, Sn, Pb, was still missing, and its publication will
complete these structure data tables.
Becauseo f the complexity of the silicates, 111/7dl has been subdivided again (111/7dlcr,
p, y). The first part, 7dlc(, treating the simple silicates, i.e. the oxo-compounds of Si
without H,O, was published some months ago. The next part, 7dlp, is presented here-
with. It covers the silicates with H,O and/or further anions. In these two parts, most
minerals, being or containing silicates, are to be found. Part 7dly, concerning the key
elements Ge, Sn and Pb, will follow soon as the last of the tables on crystal structure
data of inorganic compounds.
The term “ key element”, used as an essential term of the systematics of vol. 111/7,
is defined in the introduction (seep . XI).
The references up to 1971 are listed in subvolume 111/7g,p ublished in 1974, while
the later referencesa re given as footnotes within the tables of 111/7dl/?.
The list of substancesf or the complete volume III/7 is being prepared for the reader’s
convenience, and will be published as the last of the subvolumes, 111/7h.
Our thanks are due again to the authors for their competent and painstaking work,
the Landolt-Biirnstein office, especially Mrs. Dorothee Rathgeber, for her continuous
care of the manuscript and the proofreading and to Springer-Verlag for the excellent
cooperation and their patience during the preparation of the volume.
Darmstadt, April 1985 The Editors
Crystal structure data of inorganic compounds
Part d
Key elements: Si, Ge, Sn, Pb; B, Al, Ga, In, Tl; Be
dip: Key element Si (Substance numbers d1169...d2377)
Wolfgang Pies ‘) and Alarich Weiss
Institut fiir Physikalische Chemie, Physikalische Chemie III, Technische Hochschule Darmstadt
Gerhard Pieper, Institut fiir Kristallographie und Mineralogie der
Universitst Frankfurt
Table of contents
Introduction .......................... ........... XI
1 Subject matter ........................ ........... XI
2 Arrangement of the substances ................. ........... XI
Survey: Distribution of substancesw ithin subvolumes III/7 a-111/7h . ........... XII
3 Selection and arrangement of information in the tables ...... ........... xv
3.1 Selection of information .................. ........... xv
3.2 Arrangement of information ................ ........... XVI
3.3 Reference sources ..................... ........... XXI
4 References used in the introduction ............... ........... XXIII
5 List of space-group symbols for various settings ......... See volume III/7a, page XXIV
6 List of symbols and abbreviations ............... ........... XXIV
Tables
X Compounds with the key element silicon . . . . . . . . . . . . . . . . Subvolume III/7 d 1 CI
X.1 Simple oxo-compounds of silicon . . . . . . . . . . . . . . . . . . Subvolume 111/7d1 M
X.1.1 Simple oxo-compounds of silicon without H,O, NH,, . . .
(simple silicates) . . . . . . . . . . . . . . . . . . . . . . . Subvolume 111/7d1 cI
X.1.2 Simple oxo-compounds of silicon with H,O (simple silicate hydrates) . . . . . . . . . 1
X.1.3 Simple oxo-compounds of silicon with NH,, rare gas, halogen, . . . as solvate molecule . . 143
X.2 Oxo-compounds of silicon with additional anions (silicates with additional anions)‘) . . . . . . 149
X.2.1 Oxo-compounds of silicon with additional anions without H,O . . . . . . . . . . . . 149
X.2.1.1 Anhydrous oxo-compounds of silicon with halide ions as additional anions . . 149
X.2.1 .l .l Anhydrous oxo-compounds of silicon with F0 as additional anion . . . 149
X.2.1.1.2 Anhydrous oxo-compounds ofsilicon with Clo, Bra, Io
as additional anions . . . . . . . . . . . . . . . . . . . . . . 167
X.2.1.2 Anhydrous oxo-compounds of silicon with OHo as additional anion . . . . . . 172
X.2.1.3 Anhydrous oxo-compounds ofsilicon with SkQa s additional anion . . . . . . . 386
‘) Present address: BASF, Ammoniaklaboratorium, Ludwigshafen.
‘) Silicates with additional anions are listed according to the ratio anions/cations, i.e. C(0 + F +OH .)/Z Me. In nature
one finds for silicates with OH@ as additional anion quite often a partial replacement of OHo by Fe. Therefore
hydroxisilicates and hydroxifluorosilicates are not separated here into two groups but treated together and listed accord-
ing to the cations.
Table of contents
X.2.1.4 Anhydrous oxo-compounds of silicon with SOie as additional anion . . . . . . 395
X.2.1.5 Anhydrous oxo-compounds of silicon with Sc$, SeO:’ as additional anions . . . 401
X.2.1.6 Anhydrous oxo-compounds ofsilicon with CrO:‘, MOO:‘, WOZ’ as additional
anions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 402
X.2.1.7 Anhydrous oxo-compounds of silicon with N”’ and NO? as additional anion . 404
X.2.1.8 Anhydrous oxo-compounds of silicon with POio and additional anions . . . . 409
X.2.1.8.1 Anhydrous oxo-compounds of silicon with PO:’ as additional anion . . 409
X.2.1.8.2 Anhydrous oxo-compounds of silicon with PO:@ and Fe, OH’, . . .
as additional anions . . . . . . . . . . . . . . . . . . . . 417
X.2.1.9 Anhydrous oxo-compounds of silicon with AsO:O, SbO:‘, VO:’ as additional
anions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 425
X.2.1.10 Anhydrous oxo-compounds of silicon with CO:@ as additional anion . . . . . 429
X.2.2 Oxo-compounds of silicon with additional anions and H,O . . . . . . . . . . . . . 439
X.2.2.1 Oxo-compounds of silicon with halide ions as additional anions and H,O . . . 439
X.2.2.2 Oxo-compounds ofsilicon with OH0 as additional anion and H,O . . . . . . 443
X.2.2.3 Oxo-compounds ofsilicon with SOi as additional anion and H,O . . . . . . . 491
X.2.2.4 Oxo-compounds of silicon with CrO,2 8 , MOODY,W Oze as additional anions and
H,O . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 493
X.2.2.5 Oxo-compounds of silicon with NO?, PO,3 8 , VO:@ as additional anions and H,O 493
X.2.2.6 Oxo-compounds ofsilicon with CO:@ as additional anion and H,O . . . . . . . 499
X.2.3 Oxo-compounds of silicon with additional anions and NH,, rare gas, halogen, . . . as solvate
molecule . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 506
Referencesf or III/7 ............................. Subvolume III/7g
Over-all list ofcontents of volume III/7 ..................... Subvolume III/7h
Alphabetical formula index .......................... Subvolume III/7h
Alphabetical mineral name index ........................ Subvolume III/7h
X Verbindungen mit dem Schliisselelement Silicium -Compounds with the key element silicon
X.1 Einfache Oxoverbindungen des Siliciums - Simple oxo-compounds of silicon
X.1.1 Einfache Oxoverbindungen des Siliciums ohne H,O, NH,, . . . (einfache Silikate) -
Simple oxo-compounds of silicon without H,O, NH,, . . . (simple silicates)
See Subvolume III/7 d 1 CI
X.1.2 Einfache Oxoverbindungen des Siliciums mit H,O (einfache Silikathydrate) -
Simple oxo-compounds of silicon with H,O (simple silicate hydrates)
Nr. Substanz Raum- 4 b, c PI Z TYP Literatur
&P
gruppe a, A Y kd Strukturbestimmung
cla g/cm3 Kristallform und weitere Angaben
d1169 H4Si40r0. 05 Hz0 ‘) JXll a= 7,64+3 4 2,05 BaFe[SiaO 101(I )-Typ (Gillespit (I)-Typ); 22, 486; 58Pal;
P4/ncc c=15,10*5 12,151 Phyllosilikat. 22, 492; 54Pa3;
c/a=1,976 Parameter: qualitativ; X, Einkristall. 23, 486; 59Pal
Farblose, tetragonale Platten mit {OOl},
{IOI}, (110). n,=1,441...1,455;
n,=1,449...1,465.
d1170 NazSi03. 3H202 ortho- a= 8,241 f3 4 I,66 Parameter: - ; X, Pulver. 71Ri9
rhombisch b = 19,374+ 8 [MW Instabile Kristalle.
c= 5,487+2
NazSi03 .6 Hz0 Siehe NazHzSi04. 5H20, Nr. d1174.
NazSi03 .8 Hz0 Siehe NazHzSi04. 7Hz0, Nr. d1175.
d1171 NazSiOs.9Hz0 D2’ a=11,74 ‘) 8 I,65 NalSi03 . 9Hz0-Typ. 66Ja2; 66Jal;
Ib2cha b=17,03 [I,631 Parameter: komplett ; X, Einkristall, Pulver. 12, 269; 48La2
c=11,60 Farblose Tafeln und quadratische Prismen
mit F&hen der tetragonalen Bipyramide.
sol.: sehr leicht in HzO. Verliert oberhalb
T=lOO”C alles HzO. T=47...48 “C.
zll
d1169 ‘) Auch als 4Si0, .2,5H,O formuliert. Darstellung durch Auswaschen van Gillespit (I), BaFe[Si,O,,](I).
d1171 ‘) 112, 269; 48La2]: a=11,74; b=16,88; c=11,50; ~,=1,656.
