Journal of Non-Crystalline Solids 1996: Vol 198-200 Index

33 Pages·1996·10.9 MB·English

JOURNAL OF
NON-CRYSTALLINE SOLDDS
ELSEVIER Journal of Non-Crystalline Solids 198—200 (1996) xxvii—xlvi
Author index
margo Jr., Cathodic and anodic glow
Adolphi, B., see Alhallani, B. 198-200 (1996) discharge silicon—carbon alloys (a-
Adriaenssens, G., see Lyubin, V. 198-200 (1996) Si,_ ,C,:H) from x=0.5 to 1: A
Adriaenssens, G.J., see Tikhomirov, comparative study by photoemission
V.K. 198-200 (1996) (UPS) and photoluminescence (PL) 198-200 (1996)
Adriaenssens, G.J., see Baranovskii, Amaratunga, G.A.J. and S.R.P. Silva,
S.D. 198-200 (1996) Field emission from a-C:H and a-
Adriaenssens, G.J., S.D. Baranovskii, W. C:H:N 198-200 (1996)
Fuhs, J. Jansen and O. Oktii, Light- Ando, M., M. Takabatake, E. Nishimura,
intensity dependence of excess car- F. Leblanc, K.-i. Onisawa and T.
rier lifetimes 198-200 (1996) Minemura, Roles of bonded hydro-
Adriaenssens, G.J., see Eliat, A. 198-200 (1996) 5 gens and oxygen vacancies on crys-
Adriaenssens, G.J., A. Gheorghiu, C. tallization of hydrogenated amor-
Sénémaud, N. Qamhieh, N. Bollé, E. phous indium tin oxide (a-ITO:H)
Sleeckx and P. Nagels, Comparison films 198-200 (1996)
between electrical properties and Androulidaki, M., see Tzanetakis, P. 198-200 (1996)
electronic structure of variously-pre- Aniya, M., A model for the photo-elec-
pared germanium selenide films 198-200 (1996) tro ionic phenomena in chalcogenide
Akasaka, T. and I. Shimizu, Fabrication glasses 198-200 (1996) 762
of high-quality poly-Si thin films Aoki, Y., see Hattori, R. 198-200 (1996) 649
combined with in situ real-time Aoyagi, Y., see Zhao, X. 198-200 (1996) 847
spectroscopic ellipsometry 198-200 (1996) 883 Aoyagi, Y., see Komuro, S. 198-200 (1996) 965
Akiyama, T., see Tsuji, N. 198-200 (1996) 1034 Aoyagi, Y., see O’ Keeffe, P. 198-200 (1996) 969
Akiyama, T., see Tsuji, N. 198-200 (1996) 1054 Apte, R., see Street, R.A. 198-200 (1996) 1151
Al-Alawi, S.M., see Al-Dallal, S. 198-200 (1996) 1072 Arai, K., see Toyoshima, Y. 198-200 (1996) 1042
Al-Dallal, S., S. Arekat, S.M. Al-Alawi, Arai, T., see Matsuishi, K. 198-200 (1996) 552
S. Aljishi and R. Bannai, Prepara- Arai, T., see Onari, S. 198-200 (1996) 700
tion, structural and optical properties Arai, T., see Shirai, H. 198-200 (1996) 931
of novel hydrogenated and fluori- Arai, Y., see Ikeo, I. 198-200 (1996) 1109
nated amorphous silicon—sulfur al- Arakane, T., see Matsuse, M. 198-200 (1996) 787
loys 198-200 (1996) 1072 Arekat, S., see Al-Dallal, S. 198-200 (1996) 1072
Alhallani, B., G. Suchaneck, J. Schmal, Arkhipov, V.I. and H. Bassler, Charge
R. Staub, B. Adolphi and K. carrier transport in diluted hopping
Drescher, Defect density of a-Si:H systems 198-200 (1996) 242
films grown at high deposition rates 198-200 (1996) 371 Arkhipov, V.I., H. Bassler, M. Deussen,
Alhallani, B., R. Tews, G. Suchaneck, E.O. Gobel, U. Lemmer and R.F.
S. Rodhlecke, A. Kottwitz and K. Mahrt, Field-induced dissociation of
Schade, Improved quality of high optical excitations in conjugated
deposition rate a-Si:H films prepared polymers 198-200 (1996) 661
at usual substrate temperature 198-200 (1996) 1063 Arlauskas, K., see JuSka, G. 198-200 (1996) 202
Aljishi, S., see Al-Dallal, S. 198-200 (1996) 1072 Asami, T., see Onari, S. 198-200 (1996) 700
Alvarez, F., see Comedi, D. 198-200 (1996) 136 Asher, S., see Branz, H.M. 198-200 (1996) 441
Alvarez, F., P.I. Rovira, M. Bormioli, S. Ashida, Y., see Saitoh, K. 198-200 (1996) 1093
Souto, L.R. Tessler and S.S. Ca- Ashida, Y., see Sadamoto, M. 198—200 (1996) 1105
XXVill Author index
Azuma, M., T. Yokoi and I. Shimizu, Shah and M. Vanééek, Enhanced op-
Improved stability of a-Si:H fabri- tical absorption in microcrystalline
cated from SiH,Cl, by ECR hydro- silicon 198-200 (1996) 903
gen plasma 198-200 (1996) 419 Beck, N., see Wyrsch, N. 198-200 (1996) 238
Becker, F., see Carius, R. 198-200 (1996) 246
Baba, T., see Matsuyama, T. 198-200 (1996) 940 Benlahsen, M., see Zellama, K. 198-200 (1996) 81
Bae, B.S., see Hwang, C.-S. 198-200 (1996) 499 Benson, D.K., see Bullock, J.N. 198-200 (1996) 1163
Balberg, I., see Lubianiker, Y. 198-200 (1996) 309 Bernhard, N., see Schmid, G. 198-200 (1996) 206
Balberg, I., see Lubianiker, Y. 198-200 (1996) 949 Beyer, W., Incorporation and thermal
Banerjee, A., see Lucovsky, G. 198-200 (1996) 19 stability of hydrogen in amorphous
Banki, P., see Pécsik, I. 198-200 (1996) 632 silicon and germanium 198-200 (1996) 40
Bannai, R., see Al-Dallal, S. 198-200 (1996) 1072 Beyer, W. and H. Mell, Comparative
Baranovskii, S.D. and P. Thomas, Non- study of light-induced photoconduc-
linear hopping transport in band tails 198-200 (1996) 140 tivity decay in hydrogenated amor-
Baranovskii, S.D., T. Faber, F. Hensel, phous silicon 198-200 (1996) 466
P. Thomas and G.J. Adriaenssens, Beyer, W., see Stief, R. 198-200 (1996) 636
Einstein’s relationship for hopping Beyer, W., see Schade, K. 198-200 (1996) 1050
electrons 198-200 (1996) Bezemer, J., see Bayley, P.A. 198-200 (1996) 161
Baranovskii, S.D., T. Faber, F. Hensel Bezemer, J., see Eliat, A. 198-200 (1996) 592
and P. Thomas, On the description Bhatt, R.N., see Taguchi, M. 198-200 (1996) 899
of hopping-energy relaxation and Bimberg, D., see Zacharias, M. 198-200 (1996) 115
transport in disordered systems 198-200 (1996) Bird, J.P., see Ochiai, Y. 198-200 (1996) 804
Baranovskii, S.D., see Adriaenssens, Blasing, J., see Driisedau, T.P. 198-200 (1996) 111
G.J. 198-200 (1996) Blasing, J., see Zacharias, M. 198-200 (1996) 919
Bardet, E., J.E. Bourée, M. Cuniot, J. Blum, T., see Schade, K. 198-200 (1996) 1050
Dixmier, P. Elkaim, J. Le Duigou, Bock, W., see Driisedau, T.P. 198-200 (1996) 111
A.R. Middya and J. Perrin, The grain Bollé, N., see Adriaenssens, G.J. 198-200 (1996) 675
size in microcrystalline silicon: cor- Bondarenko, V., see Lazarouk, S. 198-200 (1996) 973
relation between atomic force mi- Boonkosum, W., D. Kruangam, B. Rat-
croscopy, UV reflectometry, ellip- wises, T. Sujaridchai, S. Panyakeow,
sometry, and X-ray diffractometry 198-200 (1996) S. Fujikake and H. Sakai, Amor-
Bartlett, 1.D., J.M. Marshall and J.M. phous SiO:H thin film visible light
Maud, Characterization and applica- emitting diode 198-200 (1996) 1226
tion of carbazole modified polysilox- Bormioli, M., see Alvarez, F. 198-200 (1996) 628
anes to electrochromic displays 198-200 (1996) 665 Bounouh, Y., see Zellama, K. 198-200 (1996) 81
Barua, A.K., see Middya, A.R. 198-200 (1996) 1067 Bourée, J.E., C. Godet, B. Drévillon, R.
Basing, J., see Zacharias, M. 198-200 (1996) 115 Etemadi, T. Heitz, J. Cernogora and
Bassler, H., see Arkhipov, V.I. 198-200 (1996) 242 J.L. Fave, Optical and luminescence
Bassler, H., see Arkhipov, V.I. 198-200 (1996) 661 properties of polymer-like a-C:H
Bauer, G.H., see Briiggemann, R. 198-200 (1996) 186 films deposited in a dual-mode
Bauer, S., see Diehl, F. 198-200 (1996) 436 PECVD reactor 198-200 (1996) 623
Bauer, S., T. Haage, B. Schroder and H. Bourée, J.E., see Bardet, E. 198-200 (1996) 867
Oechsner, Some aspects on an im- Brandt, M.S., see Graeff, C.F.O. 198-200 (1996) 1117
proved stability of a-Si:H and a-Ge:H Branz, H.M., J. Bullock, S. Asher, H.
films with respect to their mi- Gleskova and S. Wagner, On the
crostructure 198-200 (1996) lack of observable light-induced H
Bauhofer, W., see Riiter, D. 198—200 (1996) diffusion near room temperature 198-200 (1996) 441
Bayley, P.A., J.M. Marshall, C. Main, Branz, H.M., T. Unold and P.A. Fed-
D.P. Webb, R.A.C.M.M. Van Swaaij ders, Structural memory model of
and J. Bezemer, Determination of slow defect relaxation in hydro-
the density of states in amorphous genated amorphous silicon 198-200 (1996) 535
silicon—carbon alloys using a Fourier Branz, H.M., see Bullock, J.N. 198—200 (1996) 1163
transformation of transient photocur- Briiggemann, R. and G.H. Bauer, Identi-
rent data 198—200 (1996) 161 fication and explanation of peculiar
Bechinger, C., see Bullock, J.N. 198-200 (1996) 1163 features in hole SCLC-TOF in a-Si:H
Beck, N., J. Meier, J. Fric, Z. RemeS, A. pin-diodes from numerical mod-
Poruba, R. Fliickiger, J. Pohl, A. elling 198-200 (1996) 186
Author index
Briiggemann, R., see Carius, R. 198-200 (1996) 246 electroluminescence from crystal-
Briiggemann, R., see Gao, W. 198-200 (1996) 1221 lized a-Si:H/a-SiNy:H multiquan-
Bullock, J., see Branz, H.M. 198-200 (1996) 441 tum well structures 198-200 (1996) 833
Bullock, J.N., C. Bechinger, D.K. Ben- Chen, K., H. Qin, X. Huang, K. Ikuta,
son and H.M. Branz, Semi-trans- A. Matsuda and K. Tanaka, The ef-
parent a-SiC:H solar cells for self- fect of hydrogen species on the elec-
powered photovoltaic—electrochro- tronic properties of nc-Si:H prepared
mic devices 198-200 (1996) 1163 in a triode PECVD system 198-200 (1996) 89]
Burak Ucer, K., see von Behren, J. 198-200 (1996) 957 Chen, K., see Gu, X. 198-200 (1996) 1176
Burnham, J.S., see Collins, R.W. 198-200 (1996) 981 Chen, X., see Huang, X. 198-200 (1996) 821
Chen, Y., see Wickboldt, P. 198-200 (1996) 567
Callaerts, R., see Sleeckx, E. 198-200 (1996) 723 Cheong, H.M., see Chen, J.H. 198-200 (1996) 128
Camargo Jr., S.S., see Alvarez, F. 198-200 (1996) 628 Cheong, H.M., see Wickboldt, P. 198-200 (1996) 813
Caputo, D. and G. de Cesare, New a- Chevrier, J.-B., see Gu, Q. 198-200 (1996) 194
Si:H two-terminal switching device Chida, Y., see Kondo, M. 198-200 (1996) 178
for active display 198-200 (1996) 1134 Chida, Y., M. Kondo and A. Matsuda,
Caputo, D., F. Irrera, F. Palma, S.R. Interpretation of mechanism deter-
Rachele and M. Tucci, Amorphous mining field effect mobility in a-Si:H
silicon optical spectrum analyzer for TFT based on surface reaction model 198-200 (1996) 1121
the visible range 198—200 (1996) 1172 Cho, S.M., C. Christensen, G. Lucovsky
Carius, R., F. Becker, R. Briiggemann and D.M. Maher, Deposition of mi-
and H. Wagner, Electrolumines- crocrystalline hydrogenated silicon,
cence and forward bias currents in germanium alloy (jc-Si,Ge,_ ,:H)
amorphous silicon p—i—n diodes: the films by reactive magnetron sputter-
effect of steady state bias and large ing (RMS) 198-200 (1996) 587
i-layer thickness 198-200 (1996) 246 Choi, H.S., K.H. Jang, B.H. Min, M.K.
Carius, R., see Hapke, P. 198-200 (1996) 927 Han and J. Jang, Pulsed-laser-in-
Cernogora, J., see Bourée, J.E. 198-200 (1996) 623 duced crystallization of fluorinated
Chabloz, P., H. Keppner, D. Fischer, D. amorphous and microcrystalline sili-
Link and A. Shah, Amorphous sili- con films 198-200 (1996) 945
con p-—i—n diodes, deposited by the Choi, J., A. Singh, E.A. Davis and S.J.
VHF-GD process: new experimental Gurman, Optical properties and
results. 198-200 (1996) 1159 structure of unhydrogenated, hydro-
Chack, A., see Zelikson, M. 198—200 (1996) 107 genated, and zinc-alloyed a-Ge,
Chahed, L., see Zellama, K. 198-200 (1996) 81 Se,_, films prepared by radio-
Chambouleyron, I., see Comedi, D. 198-200 (1996) 136 frequency sputtering 198-200 (1996) 680
Chambouleyron, I., see Comedi, D. 198-200 (1996) 399 Christen, J., see Zacharias, M. 198-200 (1996) 115
Chauvet, O., see Kugler, S. 198-200 (1996) 646 Christen, J., see Zacharias, M. 198-200 (1996) 919
Chen, C.-C., see Zhong, F. 198-200 (1996) 572 Christensen, C., see Cho, S.M. 198-200 (1996) 587
Chen, D.Q., J.M. Viner and P.C. Taylor, Cohen, J.D. and F. Zhong, Bias light
New nitrogen-related defects in ni- induced defect relaxation phenom-
trogen-rich a-Si, N,_ ,:H 198-200 (1996) 334 ena in hydrogenated amorphous sili-
Chen, I.-S., L. Jiao, R.W. Collins and con 198-200 (1996) 512
C.R. Wronski, A novel approach to Cohen, J.D., see Kwon, D. 198-200 (1996) 530
the analysis of sub-bandgap absorp- Cohen, J.D., see Wickboldt, P. 198-200 (1996) 567
tion in a-Si:H based materials 198-200 (1996) 391 Cohen, J.D., see Zhong, F. 198-200 (1996) 572
Chen, J.H., D. Pang, P. Wickboldt, H.M. Collins, R.W., see Chen, I.-S. 198-200 (1996) 39]
Cheong and W. Paul, Visible room- Collins, R.W., see Nguyen, H.V. 198-200 (1996) 853
temperature photoluminescence from Collins, R.W., J.S. Burnham, S. Kim, J.
oxidized germanium 198-200 (1996) 128 Koh, Y. Lu and C.R. Wronski, In-
Chen, J.H., see Driisedau, T.P. 198-200 (1996) 111 sights into deposition processes for
Chen, J.H., see Wickboldt, P. 198-200 (1996) 567 amorphous semiconductor materials
Chen, J.H., see Wickboldt, P. 198-200 (1996) 813 and devices from real time spectro-
Chen, K., see Huang, X. 198—200 (1996) 821 scopic ellipsometry 198-200 (1996) 981
Chen, K., see Xu, J. 198—200 (1996) 582 Comedi, D., A.R. Zanatta, F. Alvarez
Chen, K., M. Wang, W. Shi, L. Jiang, and I. Chambouleyron, Electronic
W. Li, J. Xu and X. Huang, Visible structure of amorphous germanium—
Author index
nitrogen alloys: a UV photoelectron Deki, H., see Ohmura, M. 198-200 (1996)
spectroscopy study 198-200 (1996) 136 Della Sala, D., see Fameli, G. 198-200 (1996)
Comedi, D., F. Fajardo and I. Cham- Demichelis, F., see Fathallah, M. 198-200 (1996)
bouleyron, Band tails and defect Demichelis, F., see Giorgis, F. 198-200 (1996) §
density in p-type doped hydro- Deussen, M., see Arkhipov, V.I. 198-200 (1996)
genated amorphous germanium 198-200 (1996) : Dick, F., see Main, C. 198-200 (1996) 2
Cooper, C.H., see Dunnett, B. 198-200 (1996) Diehl, F., W. Herbst, S. Bauer, B.
Corey, R.L., M.J. Kernan, D.J. Leopold, Schréder and H. Oechsner, Creation
P.A. Fedders, R.E. Norberg, W.A. of metastable defects in a-Si:H by
Turner and W. Paul, Stability of the keV-electron irradiation at different
number of silicon—hydrogen bonds temperatures 198-200 (1996)
upon photoillumination of undoped Dixmier, J., see Cuniot, M. 198-200 (1996)
amorphous hydrogenated silicon 198-200 (1996) 65 Dixmier, J., see Bardet, E. 198-200 (1996)
Crandall, R.S., see Vanééek, M. 198-200 (1996) 478 Dohmaru, T., see Nakayama, Y. 198-200 (1996)
Crandall, R.S., see Lips, K. 198-200 (1996) 525 Drescher, K., see Alhallani, B. 198-200 (1996)
Crovini, G., see Fathallah, M. 198-200 (1996) 490 Drévillon, B., see Bourée, J.E. 198-200 (1996)
Crovini, G., see Giorgis, F. 198-200 (1996) 596 Drevillon, B., see Roca i Cabarrocas, P. 198-200 (1996)
Cruz, J., see Vieira, M. 198-200 (1996) 1193 Driisedau, T.P., P. Wickboldt, J.H. Chen,
Cull, T., see Santos-Filho, P. 198-200 (1996) 77 D. Pang, H. Freistedt, J. Blasing and
Cuniot, M., J. Dixmier and P. W. Bock, Plasma deposited non-
Roca i Cabarrocas, Improved mobil- stoichiometric hydrogenated germa-
ity-lifetime product of holes in a- nium sulfide a-Ge,_ .S ,:H (x < 0.3) 198-200 (1996)
Si:H n—i-p devices: a consequence Driisedau, T.P., Observation of zero dif-
of structural relaxation? 198—200 (1996) 540 ferential resistivity in a-Si:H barriers
Cuniot, M., see Bardet, E. 198-200 (1996) 867 — on the absence of quantum con-
finement in amorphous semiconduc-
tors for high fields 198-200 (1996)
Dalal, V., see Kaushal, S. 198-200 (1996) 563
Driisedau, T.P., A.N. Panckow and F.
Dalal, V.L., S. Kaushal, R. Knox, K.
Klabunde, The hydrogenated amor-
Han and F. Martin, Significant im-
phous — silicon/nanodisperse metal
provements in stability of amor-
(SIMAL) system — Films of unique
phous silicon solar cells by using
electronic properties 198-200 (1996) 829
ECR deposition 198-200 (1996) 1101
Du, J., see Gu, X. 198-200 (1996) 1176
Davis, E.A., Hydrogen in silicon 198-200 (1996) |
Dunnett, B., R.A.G. Gibson, D.I. Jones,
Davis, E.A., see Choi, J. 198-200 (1996) 680
C.H. Cooper, M.J. Powell, S.C.
Davis, E.A., see Singh, A. 198-200 (1996) 692
Deane, I.D. French and D.T. Mur-
Dayoub, F., J.P. Kleider, C. Longeaud,
ley, Equilibration in amorphous sili-
D. Mencaraglia and J. Reynaud,
con nitride alloys 198-200 (1996)
Thermal bias annealing experiments
Durny, R., see Hata, N. 198-200 (1996)
on aluminum /silicon nitride /hydro-
genated amorphous silicon top gate
structures 198—200 (1996) 318 Eisenberg, N.P., M. Manevich, M. Kle-
Deane, S., see Murley, D. 198-200 (1996) 1058 banov, V. Lyubin and S. Shtutina,
Deane, S.C. and M.J. Powell, The rela- Fabrication and testing of microlens
tionship between hydrogen and elec- arrays for the IR based on chalco-
tronic defects in amorphous silicon 198—200 (1996) 295 genide glassy resists 198-200 (1996)
Deane, S.C., see Dunnett, B. 198-200 (1996) 601 Eitel, S., see Toet, D. 198-200 (1996)
De Cesare, G., see Caputo, D. 198-200 (1996) 1134 Eliat, A., B. Yan, G.J. Adriaenssens and
De Cesare, G., F. Galluzzi, F. Irrera, D. J. Bezemer, Time-of-flight and
Lauta, F. Ferrazza and M. Tucci, post-transit spectroscopy of a-
Variable spectral response photode- Si,_ .C,:H alloys 198-200 (1996) 5
tector based on crystall/i anmoer - Elkaim, P., see Bardet, E. 198-200 (1996)
phous silicon heterostructure 198-200 (1996) 1189 Elliott, S.R. and V.K. Tikhomirov, Vec-
De Cesare, G., V. lorio, F. Irrera, F. toral and scalar photoinduced effects
Palma and M. Tucci, Amorphous sil- in chalcogenide glasses 198-200 (1996)
icon UV photodetectors with rejec- Endo, S., see Shams-Kolahi, W. 198—200 (1996)
tion of the visible spectrum 198-200 (1996) 1198 Equer, B., see Gu, Q. 198-200 (1996)
Deki, H., see Yamashita, K. 198-200 (1996) 800 Etemadi, R., see Bourée, J.E. 198-200 (1996)
Author index XXXl
Ewen, P.J.S., see Wagner, T. 198-200 (1996) 744 Frauenheim, Th., see Schifer, J. 198-200 (1996) 641
Ewen, P.J.S., see Zakery, A. 198-200 (1996) 769 Freistedt, H., see Driisedau, T.P. 198-200 (1996) 111
French, I., see Murley, D. 198—200 (1996) 1058
Faber, T., see Baranovskii, S.D. 198-200 (1996) 214
French, I.D., see Dunnett, B. 198—200 (1996) 601
Faber, T., see Baranovskii, S.D. 198—200 (1996) 222
Fric, J., see Vanééek, M. 198—200 (1996) 478
Fajardo, F., see Comedi, D. 198-200 (1996) 399
Fric, J., see Beck, N. 198—200 (1996) 903
Fameli, G., D. Della Sala, F. Roca and
Fritzsche, H., S. Heck and P. Stradins,
C. Gerardi, Characterisation of thin
Dual beam and transient infrared
amorphous silicon films with multi-
stimulated photoconductivity in hy-
ple internal reflectance spectroscopy 198-200 (1996) 69
drogenated amorphous silicon at 4.2
Fantoni, A., see Vieira, M. 198—200 (1996) 1193
K 198—200 (1996) 153
Fantoni, A., see Magarico, A. 198—200 (1996) 1207
Fritzsche, H., see Tzanetakis, P. 198-200 (1996) 276
Fathallah, M., R. Gharbi, G. Crovini, F.
Fritzsche, H., see Stradins, P. 198-200 (1996) 432
Demichelis, F. Giorgis, C.F. Pirri, E.
Fritzsche, H., see Tzanetakis, P. 198—200 (1996) 458
Tresso and P. Rava, Light-soaking
Frumar, M., see Wagner, T. 198-200 (1996) 744
in a-SiC:H films grown by PECVD
Fuhs, W., see Schubert, M. 198-200 (1996) 251
in undiluted and hydrogen diluted
Fuhs, W., see Lips, K. 198-200 (1996) 267
SiH, + CH, gas mixtures 198—200 (1996) 490
Fuhs, W., see Adriaenssens, G.J. 198-200 (1996) 271
Fauchet, P.M., see Xu, Z. 198-200 (1996) 11
Fuhs, W., see Saleh, R. 198-200 (1996) 367
Fauchet, P.M., see von Behren, J. 198-200 (1996) 957
Fujii, T., M. Yoshimoto, T. Fuyuki and
Fave, J.L., see Bourée, J.E. 198—200 (1996) 623
H. Matsunami, Bonding structures in
Fedders, P., see Santos-Filho, P. 198-200 (1996) 77
highly photoconductive a-SiC:H
Fedders, P.A., First principles simula-
films deposited by hybrid-plasma
tions of local and extended migra-
chemical vapor deposition 198—200 (1996) 577
tion of H and defects in a-Si 198-200 (1996) 56
Fujikake, S., see Ichikawa, Y. 198—200 (1996) 1081
Fedders, P.A., see Corey, R.L. 198-200 (1996) 65
Fujikake, S., see Boonkosum, W. 198-200 (1996) 1226
Fedders, P.A., see Branz, H.M. 198-200 (1996) 535
Fuyiki, T., see Hattori, R. 198-200 (1996) 649
Fefer, E., see Lubianiker, Y. 198-200 (1996) 309
Fujiwara, S. and F. Yonezawa, Anoma-
Fejfar, A., G. JuSka and J. Ko¢éka, Com-
lous relaxation in fractal and disor-
ments on space-charge-limited time-
dered systems 198—200 (1996) 507
of-flight measurements in post-tran-
Fujiyoshi, T., see Kubota, H. 198-200 (1996) 383
sit mode, applied to a-Si:H based
Fukuda, K., see Kashiro, T. 198—200 (1996) 1130
solar cells. 198-200 (1996) 190
Fukuda, K., N. Imai, S.-i. Kawamura,
Fejfar, A., A. Poruba, M. Vanééek and
K. Matsumura and N. Ibaraki,
J. Koéka, Precise measurement of
Switching performance of high rate
the deep defects and surface states in
deposition processing a-Si:H TFTs 198-200 (1996) 1137
a-Si:H films by absolute CPM 198-200 (1996) 304
Fukuda, N., see Saitoh, K. 198—200 (1996) 1093
Fejfar, A., see Koéka, J. 198-200 (1996) 857
Fukuda, N., see Sadamoto, M. 198-200 (1996) 1105
Feng, D., see Xu, J. 198-200 (1996) 582
Fukuda, S., see Saitoh, K. 198—200 (1996) 1093
Ferrari, A., see Lazarouk, S. 198-200 (1996) 973
Fukuda, S., see Sadamoto, M. 198-200 (1996) 1105
Ferrazza, F., see de Cesare, G. 198—200 (1996) 1189
Furlan, J., see Topic, M. 198—200 (1996) 1180
Finger, F., see Hapke, P. 198—200 (1996) 927
Furukawa, A., see Ichinose, H. 198—200 (1996) 322
Finger, F., see Stiebig, H. 198-200 (1996) 1185
Furukawa, A., see Ihara, H. 198-200 (1996) 326
Fischer, D., see Chabloz, P. 198—200 (1996) 1159
Furukawa, A., see Yamaguchi, T. 198-200 (1996) 1017
Fliickiger, R., see Beck, N. 198-200 (1996) 903
Furukawa, A., see Ishizuka, Y. 198—200 (1996) 1021
FélscJ.h,, se e StiebigH,. 198-200 (1996) 1185
Futako, W., K. Yoshino, K. Nakamura,
Fortmann, C.M., see Futako, W. 198-200 (1996) 1046
C.M. Fortmann and I. Shimizu, Fab-
Fortmann, C.M. and I. Shimizu, Pros-
rication of high quality silicon re-
pects for utilizing low temperature
lated films with band-gap of 1.5 eV
amorphous to crystalline phase
by chemical annealing 198—200 (1996) 1046
transformation to define circuit ele-
Fuyuki, T., see Fujii, T. 198—200 (1996) 577
ments; a new frontier for very large
scale integrated technology 198—200 (1996) 1146 Galloni,R. , see Giorgis,F . 198-200 (1996) 596
Fortunato, E., see Martins, R. 198—200 (1996) 1202 Galluzzi, F., see de Cesare, G. 198—200 (1996) 1189
Fortunato, E., F. Soares, G. Lavareda Ganguly, G., I. Sakata and A. Matsuda,
and R. Martins, A linear array thin Time of flight mobility measure-
film position sensitive detector for ments in a-Si:H grown under con-
3D measurements 198—200 (1996) 1212 trolled-energy ion-bombardment 198—200 (1996) 300
XXXil Author index
Ganguly, G. and A. Matsuda, Role of amorphous silicon thin-film transis-
hydrogen dilution in improvement of tors 198-200 (1996) 1117
a-SiGe:H alloys 198-200 (1996) 559 Grebner, S., see Schwarz, R. 198-200 (1996) 234
Ganguly, G. and A. Matsuda, A new Grebner, S., see Krankenhagen, R. 198-200 (1996) 923
deposition parameter to control the Grebner, S., see Koynoy, S. 198-200 (1996) 1012
carrier drift mobility in a-Si:H 198-200 (1996) 1003 Grekos, P., see Matsuda, O. 198-200 (1996) 688
Ganjoo, A., A. Yoshida and K. Shi- Gu, Q., E.A. Schiff, J.-B. Chevrier and
makawa, Random walk approach for B. Equer, Fundamental transport
the proper estimation of density of mechanisms and high field mobility
defect states in amorphous chalco- measurements in amorphous silicon 198-200 (1996) 194
genides 198-200 (1996) 313 Gu, X., J. Du, X. Huang, J. Zhou, W.
Gao, W., see Main, C. 198-200 (1996) 263 Li, W. Gao and K. Chen, The fabri-
Gao, W., see Gu, X. 198-200 (1996) 1176 cation and application of a novel
Gao, W., C. Main, S. Reynolds, R. OASLM based on a-Si:H and _ its
Briiggemann, J.H. Zollondz and alloy 198-200 (1996) 1176
R.A.G. Gibson, Evaluation of the Guha, S., see Xu, X. 198-200 (1996) 60
DICE analysis method for a-Si:H Guha, S., Material and device considera-
p—i—n devices 198-200 (1996) 1221 tion for high efficiency a-Si alloy-
Gardner, A., see Kwon, D. 198-200 (1996) 530 based multijunction cells 198-200 (1996) 1076
Gerardi, C., see Fameli, G. 198-200 (1996) 69 Guha, S., see Xu, X. 198-200 (1996) 1113
Gharbi, R., see Fathallah, M. 198-200 (1996) 490 Gurman, S.J., see Choi, J. 198-200 (1996) 680
Gheorghiu, A., see Adriaenssens, G.J. 198-200 (1996) 675
Gibson, R., see Murley, D. 198-200 (1996) 1058
Gibson, R.A.G., see Main, C. 198-200 (1996) 263 Haage, T., see Bauer, S. 198-200 (1996) 462
Gibson, R.A.G., see Dunnett, B. 198-200 (1996) 601 Hajiev, F., see Malinovsky, I. 198-200 (1996) 98
Gibson, R.A.G., see Gao, W. 198-200 (1996) 1221 Hajiev, F., I. Malinovsky and H. Ugur,
Giorgis, F., see Fathallah, M. 198-200 (1996) 490 Intracavity photothermal measure-
Giorgis, F., P. Rava, R. Galloni, R. Riz- ments of ultralow absorption 198-200 (1996) 103
zoli, C. Summonte, G. Crovini, F. Hajto, J.. B. McAuley, A.J. Snell and
Demichelis, C.F. Pirri, E. Tresso and A.E. Owen, Theory of room temper-
V. Rigato, Compositional, optoelec- ature quantized resistance effects in
tronic and structural properties of metal-a-Si:H-metal thin film struc-
amorphous silicon—nitrogen alloys tures 198-200 (1996) 825
deposited by plasma enhanced Hajto, J., see Hu, J. 198-200 (1996) 1217
chemical vapor deposition 198-200 (1996) 596 Hamakawa, Y., see Okamoto, H. 198-200 (1996) 124
Glatz, F., see Prokop, J. 198-200 (1996) 1026 Hamakawa, Y., see Toyama, T. 198-200 (1996) 198
Gleskova, H., see Wagner, S. 198-200 (1996) 407 Hamakawa, Y., see Hattori, K. 198-200 (1996) 288
Gleskova, H., see Branz, H.M. 198-200 (1996) 441 Hamakawa, Y., see Shams-Kolahi, W. 198-200 (1996) 705
Gobel, E.O., see Arkhipov, V.1. 198-200 (1996) 661 Hamanaka, H., S. Konagai, K. Mu-
Godet, C., P. Morin and P. Roca i rayama, M. Yamaguchi and K.
Cabarrocas, Influence of the dilute- Morigaki, Optical properties of
phase SiH bond concentration on the amorphous As,Se,;/As,S,_ multi-
steady-state defect density in a-Si:H 198-200 (1996) layers 198-200 (1996) 808
Godet, C., see Vignoli, S. 198-200 (1996) Hambach, M., see Shams-Kolahi, W. 198-200 (1996) 705
Godet, C., see Bourée, J.E. 198-200 (1996) Han, K., see Dalal, V.L. 198-200 (1996) 1101
Goerlitzer, M., see Wyrsch, N. 198-200 (1996) Han, M.K., see Choi, H.S. 198-200 (1996) 945
Goerlitzer, M., see Shah, A. 198-200 (1996) § Han, M.K., see Lee, K.H. 198—200 (1996) 1141
Goesmann, F., see Jones, D.I. 198-200 (1996) Hanna, J.-i.. T. Ohuchi and M. Ya-
Gomi, S. and F. Yonezawa, Continuous mamoto, Direct fabrication of SiGe
time random walk model as a model crystallites on glass substrate: from
of anomalous relaxation 198-200 (1996) § nanocrystals to microcrystals 198-200 (1996) 879
Gonda, S., see Shirai, K. 198-200 (1996) Hapke, P., M. Luysberg, R. Carius, M.
Goto, M., see Shimakawa, K. 198-200 (1996) Tzolov, F. Finger and H. Wagner,
Gotoh, T., see Nonomura, S. 198-200 (1996) Structural investigation and growth
Graeff, C.F.O., G. Kawachi, M.S. of (n)-type microcrystalline silicon
Brandt, M. Stutzmann and M.J. prepared at different plasma excita-
Powell, Spin-dependent transport in tion frequencies 198-200 (1996) 927
Author index XXXill
Hari, P., P.C. Taylor and R.A. Street, Hirose, .. see Xu, J. 198-200 (1996)
Hydrogen motion in hydrogenated Hirose, ., see Murayama, K. 198-200 (1996)
amorphous silicon (a-Si:H) 198-200 (1996) 52 Hirose, ., see Yamashita, K. 198-200 (1996)
Hari, P., P.C. Taylor, W.A. King and Hirose, ., see Ohmura, M. 198-200 (1996)
W.C. LaCourse, Structural proper- Hirose, M., see Murayama, K. 198-200 (1996) 953
ties of As,Se, fibers 198-200 (1996) 736 Hirose, M., see Miyoshi, Y. 198-200 (1996) 1029
Hartmann, E., see Koynoy, S. 198-200 (1996) 1012 Hisakuni, H., see Tanaka, K. 198-200 (1996) 714
Hasegawa, S., S. Nitta and S. Nono- Hof, C., see Wyrsch, N. 198-200 (1996) 238
mura, Ultra-low frequency CPM of Hollenstein, C., see Magarico, A. 198-200 (1996) 1207
a-Si:H and relaxation 198-200 (1996) 544 Honda, A., see Shams-Kolahi, W. 198-200 (1996) 705
Hata, N., LS. Osborne, T. Ikeda, R. Hosokawa, S., see Matsuda, O. 198-200 (1996) 688
Durny and A. Matsuda, Light-in- Hosono, H., N. Kikuchi, N. Ueda and
duced metastability of ‘stable’ a-Si:H H. Kawazoe, Working hypothesis to
deposited from silane-dichlorosilane explore novel wide band gap electri-
mixtures —- comprehensive character- cally conducting amorphous oxides
ization 198-200 (1996) and examples 198-200 (1996) 165
Hata, N., see Ikeda, T. 198-200 (1996) Hu, J., A.J. Snell, J. Hajto, A.E. Owen
Hata, N., see Osborne, LS. 198-200 (1996) and M.J. Rose, Critical behavior of
Hata, N., see Kamei, T. 198—200 (1996) the dielectric properties near the
Hattori, K., see Okamoto, H. 198-200 (1996) metal—non-metal transition in
Hattori, K., H. Okamoto and Y. Cr/p*a-Si:H/V thin film devices 198-200 (1996) 1217
Hamakawa, Modulated photocurrent Huang, X., Z. Li, W. Wu, K. Chen, X.
spectroscopy of defect states in un- Chen and Z. Liu, Microstructures
doped a-Si:H 198-200 (1996) and optical properties in crystallized
Hattori, R., J. Shirafuji, Y. Aoki, T. a-Si:H multi-quantum wells using
Fujiki, S. Kawasaki and R. Nishida, excimer laser annealing 198-200 (1996) 821
Preparation and optical properties of Huang, X., see Chen, K. 198-200 (1996) 833
doubly-oriented poly-(di-methyl- Huang, X., see Chen, K. 198-200 (1996) 891
silane) films 198-200 (1996) Huang, X., see Gu, X. 198-200 (1996) 1176
Hayashi, H., S. Matsumoto and Y. Hubin, J., see Shah, A. 198-200 (1996) 548
Nakayama, Structural heterogeneity Hundhausen, M., The moving-photocar-
in nitrogen-rich a-SiN ,:H 198-200 (1996) rier-grating technique for the deter-
Hayashi, H., see Nakayama, Y. 198-200 (1996) mination of transport parameters in
Hayashi, K., see Titus, S.S.K. 198-200 (1996) 5: thin film semiconductors 198-200 (1996)
Hayashi, K., see Kugler, S. 198-200 (1996) Hundhausen, M., A. Nagy and L. Ley,
Hayashi, K., D. Kato and K. Shi- High field transport in the inversion
makawa, Photoinduced effects in layer of amorphous silicon thin film
amorphous chalcogenide films by transistors 198-200 (1996)
vacuum ultra-violet light 200 (1996) 696 Hwang, C.-S., B.S. Bae and C. Lee, The
Hazra, S., see Middya, A.R. 200 (1996) 1067 isochronal annealing study on the
Heck, S., see Fritzsche, H. 200 (1996) 153 bias stressed amorphous silicon thin
Heintze, M., see Zedlitz, R. 200 (1996) 403 film transistors 198-200 (1996)
Heintze, M., see Toet, D. 200 (1996) 887
Heintze, M. and R. Zedlitz, New diag-
nostic aspects of high rate a-Si:H Ibaraki, N., see Kashiro, T. 198-200 (1996) 1130
deposition in a VHF plasma 198-200 (1996) 1038 Ibaraki, N., see Fukuda, K. 198—200 (1996) 1137
Heitz, T., see Bourée, J.E. 198-200 (1996) 623 Ichikawa, Y., see Sasaki, T. 198-200 (1996) 1007
Henrion, W., see Krankenhagen, R. 198-200 (1996) 923 Ichikawa, Y., K. Tabuchi, A. Takano, S.
Henrion, W., see Koynoy, S. 198-200 (1996) 1012 Fujikake, T. Yoshida and H. Sakai,
Hensel, F., see Baranovskii, S.D. 198-200 (1996) 214 Film-substrate a-Si solar cells with a
Hensel, F., see Baranovskii, $.D. 198-200 (1996) 222 new monolithic series-connected
Herbst, W., see Diehl, F. 198-200 (1996) 436 structure 198-200 (1996) 1081
Herrmann, W.A., see Prokop, J. 198-200 (1996) 1026 Ichinose, H., Y. Ishizuka, H. Nozaki, A.
Hikita, H., see Takeda, K. 198-200 (1996) 486 Furukawa, H. Tango and O. Yoshida,
Hirata, S., see Nonomura, S. 198-200 (1996) 174 The bias-annealing effect on a-Si:H
Hiratsuka, K., see Toyama, T. 198-200 (1996) 198 photodiode 198-200 (1996) 322
Hirayu, T., see Kubota, H. 198-200 (1996) 383 Ifuku, T., see Otobe, M. 198-200 (1996) 875
XXXIV Author index
Ihara, H., E. Oba, Y. lida, H. Nozaki, T. Isomura, M., see Terakawa, A. 198-200 (1996) 1097
Wada, A. Furukawa, S. Manabe, H. Isoya, J., see Yamasaki, S. 198-200 (1996) 330
Tango and O. Yoshida, Electric field Ito, H., see Tomiyama, S. 198-200 (1996) 1087
concentration at electrode edge with Itoh, K.-i., see Masuda, A. 198-200 (1996) 395
decreasing amorphous silicon defect Itoh, M., N. Yoshida, H. Tanaka and K.
density 198-200 (1996) 326 Tanaka, Transient photoconduction
lida, Y., see Ihara, H. 198-200 (1996) 326 and photoinduced phenomenon in
lida, Y., see Yamaguchi, T. 198—200 (1996) 1017 ion-conducting amorphous semicon-
lida, Y., see Ishizuka, Y. 198-200 (1996) 1021 ductors 198-200 (1996) 684
Ikeda, K., see Ogihara, C. 198-200 (1996) 255 Itoh, M., see Yoshida, N. 198-200 (1996) 749
Ikeda, T., see Hata, N. 198-200 (1996) 415 Itoh, T., see Nonomura, S. 198-200 (1996) 174
Ikeda, T., see Nakayama, Y. 198-200 (1996) 915 Iwama, K., see Ohsaki, T. 198-200 (1996) 132
Ikeda, T., 1S. Osborne, N. Hata and A.
Jackson, W.B. and N.M. Johnson, Ori-
Matsuda, Enhancement of the depo-
gin of the anomalous pulse-width
sition rate of a-Si:H by introduction
dependence in capacitance transient
of an electronegative molecule into a
measurements on n-type a-Si:H 198-200 (1996) 517
silane discharge 198-200 (1996) 987
Jackson, W.B., see Street, R.A. 198-200 (1996) 1151
Ikeo, I., H. Morooka, H. Shinohara, A.
Jaguiro, P., see Lazarouk, S. 198-200 (1996) 973
Takenouchi, N. Takagi and Y. Arai,
Jang, J., see Pietruszko, S.M. 198-200 (1996) 73
Fabrication and properties of flexi-
Jang, J., see Kim, S.K. 198-200 (1996) 428
ble a-Si:H solar cells with textured
Jang, J., see Lee, W.H. 198-200 (1996) 911
Al-Si alloy electrodes 198—200 (1996) 1109
Jang, J., see Choi, H.S. 198-200 (1996) 945
Ikuta, K., Y. Toyoshima, S. Yamasaki,
Jang, J., see Lee, K.H. 198-200 (1996) 1141
A. Matsuda and K. Tanaka, STM
Jang, K.H., see Choi, H.S. 198—200 (1996) 945
and Raman study of the evolution of
Janossy, A., see Kugler, S. 198-200 (1996) 646
the surface morphology in jc-Si:H 198—200 (1996) 863
Jansen, J., see Adriaenssens, G.J. 198-200 (1996) 271
Ikuta, K., see Chen, K. 198-200 (1996) 891
Jiang, L., see Chen, K. 198-200 (1996) 833
Imai, N., see Kashiro, T. 198—200 (1996) 1130
Jiao, L., see Chen, I.-S. 198-200 (1996) 391
Imai, N., see Fukuda, K. 198—200 (1996) 1137
Jiao, L., see Liu, H. 198-200 (1996) 1168
Imajyo, N., High rate deposition of jc-
Jing, Z., see Lucovsky, G. 198-200 (1996) 19
Si with plasma gun CVD 198-200 (1996) 935
Jing, Z., see Lucovsky, G. 198-200 (1996) 342
Inoue, K., see Wada, Y. 198-200 (1996) 732
Johnson, N.M., see Jackson, W.B. 198-200 (1996) 517
Inoue, K., see Nakamura, M. 198-200 (1996) 740
Jones, D.I. and F. Goesmann, Photo-
Inoue, K., see Wang, Y. 198-200 (1996) 753
thermoelectric power of a-Si as a
lorio, V., see de Cesare, G. 198—200 (1996) 1198
function of incident wavelength 198-200 (1996) 210
Irrera, F., see Caputo, D. 198—200 (1996) 1172
Jones, D.1., see Dunnett, B. 198-200 (1996) 601
Irrera, F., see de Cesare, G. 198-200 (1996) 1189
Jung, J.H., see Lee, K.H. 198-200 (1996) 1141
Irrera, F., see de Cesare, G. 198-200 (1996) 1198
JuSka, G., see Fejfar, A. 198-200 (1996) 190
Ishida, S., S. Takaoka, K. Nakagawa, K.
JuSka, G., K. Arlauskas and J. Koéka,
Oto, K. Murase, S. Shirai and T.
Electric field heated electrons in a-
Serikawa, Electron localization in
Si:H — new features 198-200 (1996)
band-tail transport of high-mobility
poly-Si TFTs 198-200 (1996) 1125 Kadas, K., I. Laszl6 and S. Kugler,
Ishiguro, N., see Saitoh, K. 198-200 (1996) 1093 Topologically determined midgap
Ishiguro, N., see Sadamoto, M. 198—200 (1996) 1105 states in amorphous carbon: five- and
Ishii, N., see Min, H. 198-200 (1996) 375 sevenfold rings 198-200 (1996)
Ishii, T., see Naito, H. 198—200 (1996) 363 Kalpouzos, C., see Tzanetakis, P. 198-200 (1996)
Ishimura, H., see Ogihara, C. 198-200 (1996) 255 Kamei, T., N. Hata and A. Matsuda, A
Ishizuka, Y., see Ichinose, H. 198-200 (1996) 322 study of surface reactions during the
Ishizuka, Y., see Yamaguchi, T. 198-200 (1996) 1017 growth of B-doped a-Si:H using the
Ishizuka, Y., T. Yamaguchi, Y. lida, H. intermittent deposition technique 198—200 (1996)
Nozaki, A. Furukawa, H. Tango and Kanai, T., see Otobe, M. 198-200 (1996)
QO. Yoshida, Improvement of surface Kanda, H., see Tsuji, K. 198-200 (1996)
morphology and bulk structure of Kanemitsu, Y., see Naito, H. 198—200 (1996)
a-SiC:H films 198—200 (1996) 1021 Kanemitsu, Y., see Mimura, H. 198-200 (1996)
Isomura, M., T. Kinoshita and S. Tsuda, Kanemitsu, Y., T. Matsumoto and H.
What causes the inverse Staebler— Mimura, Non-linear optical proper-
Wronski effect in p-type a-Si:H? 198-200 (1996) 453 ties of porous silicon 198—200 (1996)
Author index
Kang, Q.Z., see Naito, H. 198-200 (1996) 653 Kobayashi, Y., see Shams-Kolahi, W. 198-200 (1996) 705
Kanicki, J., see Zelikson, M. 198-200 (1996) 107 Koch, F. and V. Petrova-Koch, Light
Kanicki, J., see Zelikson, M. 198-200 (1996) 259 from Si-nanoparticle systems — a
Kashiro, T., S.-i. Kawamura, N. Imai, comprehensive view 198—200 (1996)
K. Fukuda, K. Matsumura and N. Kotka, J., see Fejfar, A. 198—200 (1996)
Ibaraki, Importance of first layer Kotka, J., see JuSka, G. 198—200 (1996)
thickness on TFT characteristics us- Kotka, J., see Fejfar, A. 198—200 (1996)
ing a-Si:H deposited by 2-step pro- Kotka, J., 1. Pelant and A. Fejfar, Light
cess 198-200 (1996) 1130 emitting silicon, recent progress 198-200 (1996)
Katayama, Y., see Tsuji, K. 198-200 (1996) 24 Kodama, S.-i., see Naito, H. 198-200 (1996)
Katayama, Y., see Nosaka, H. 198-200 (1996) 218 Koh, J., see Collins, R.W. 198—200 (1996)
Katayama- Yoshida, H., see Orita, N. 198-200 (1996) 347 Koinuma, H., see Tsuboi, S. 198-200 (1996)
Kato, D., see Hayashi, K. 198-200 (1996) 696 Koinuma, H., see Matsuse, M. 198-200 (1996)
Kaushal, S., V. Dalal and J. Xu, Growth Kojima, K., see Nakayama, K. 198-200 (1996)
of high quality amorphous silicon— Kolobov, A.V., H. Oyanagi, K. Tanaka
germanium films using low pressure and K. Tanaka, Photostructural
remote electron-cyclotron-resonance changes in amorphous selenium: an
discharge 198-200 (1996) 563 in situ EXAFS study at low tempera-
Kaushal, S., see Dalal, V.L. 198-200 (1996) 1101 ture 198—200 (1996)
Kawachi, G., see Graeff, C.F.O. 198-200 (1996) 1117 Kolobov, A.V., On the origin of p-type
Kawaguchi, T., see Naito, H. 198-200 (1996) 363 conductivity in amorphous chalco-
Kawamura, S.-i., see Kashiro, T. 198-200 (1996) 1130 genides 198—200 (1996) 728
Kawamura, S.-i., see Fukuda, K. 198-200 (1996) 1137 Komatsu, H., see Murayama, K. 198-200 (1996) 953
Kawasaki, M., see Tsuboi, S. 198-200 (1996) 33 Komiyama, H., see Tsuji, N. 198-200 (1996) 1034
Kawasaki, M., see Matsuse, M. 198-200 (1996) 787 Komiyama, H., see Tsuji, N. 198—200 (1996) 1054
Kawasaki, S., see Hattori, R. 198-200 (1996) 649 Komuro, S., T. Morikawa, P. O’ Keeffe
Kawazoe, H., see Hosono, H. 198-200 (1996) 165 and Y. Aoyagi, Time-resolved pho-
Kay, M., see Singh, A. 198-200 (1996) 692 toluminescence of porous silicon un-
Kazanskii, A.G., I.A. Kurova, I.P. Zvya- der double-pulse excitation 198-200 (1996) 965
gin and D.G. Yarkin, Non-monotone Komuro, S., see O’ Keeffe, P. 198—200 (1996) 969
kinetics of persistent photoconduc- Konagai, S., see Hamanaka, H. 198-200 (1996) 808
tivity in compensated a-Si:H films 198-200 (1996) 470 Kondo, A., see Shimakawa, K. 198—200 (1996) 157
Keppner, H., see Chabloz, P. 198-200 (1996) 1159 Kondo, A., see Titus, S.S.K. 198-200 (1996) 556
Kernan, M.J., see Corey, R.L. 198-200 (1996) 65 Kondo, M., Y. Chida and A. Matsuda,
Kikuchi, N., see Hosono, H. 198-200 (1996) 165 Observation of Meyer—Neldel rule
Kim, S., see Nguyen, H.V. 198-200 (1996) 853 in extended energy regime using
Kim, S., see Collins, R.W. 198-200 (1996) 981 novel a-Si:H TFTs 198-200 (1996) 178
Kim, S.K., K.S. Lee and J. Jang, Cre- Kondo, M., see Yokomichi, H. 198-200 (1996) 379
ation of interface states between Kondo, M., see Chida, Y. 198-200 (1996) 1121
SiO, and a-Si:H in a-Si:H thin film Koos, M., see Poécsik, I. 198-200 (1996) 632
transistors by bias-stress 198-200 (1996) 428 Kods, M., see Pécsik, I. 198-200 (1996) 774
Kimura, K., see Takeda, M. 198-200 (1996) 170 Kopidakis, N., see Tzanetakis, P. 198-200 (1996) 276
Kimura, Y., see Takeda, K. 198-200 (1996) 486 Kopidakis, N., see Tzanetakis, P. 198-200 (1996) 458
King, W.A., see Hari, P. 198-200 (1996) 736 Kostoulas, Y., see von Behren, J. 198-200 (1996) 957
Kinoshita, T., see Ogihara, C. 198-200 (1996) 255 Kottwitz, A., see Alhallani, B. 198—200 (1996) 1063
Kinoshita, T., see Isomura, M. 198-200 (1996) 453 Kouchi, T., see Matsuda, O. 198-200 (1996) 688
Kitagawa, A., see Nakayama, K. 198-200 (1996) 758 Koynov, S., see Krankenhagen, R. 198-200 (1996) 923
Kitamura, K., see Umezu, I. 198-200 (1996) 778 Koynov, S., S. Grebner, P. Radojkovic,
Kitatani, T., see Ochiai, Y. 198-200 (1996) 804 E. Hartmann, R. Schwarz, L.
Klabunde, F., see Driisedau, T.P. 198-200 (1996) 829 Vasilev, R. Krankenhagen, I. Sieber,
Klebanov, M., see Lyubin, V. 198-200 (1996) 719 W. Henrion and M. Schmidt, Initial
Klebanov, M., see Eisenberg, N.P. 198-200 (1996) 766 stages of microcrystalline silicon
Kleider, J.P., see Dayoub, F. 198-200 (1996) 318 film growth 198-200 (1996) 1012
Kleider, J.P., see Longeaud, C. 198-200 (1996) 355 Koynov, S., see Vieira, M. 198—200 (1996) 1193
Klingan, F.-R., see Prokop, J. 198-200 (1996) 1026 Krankenhagen, R., M. Schmidt, S.
Knox, R., see Dalal, V.L. 198-200 (1996) 1101 Grebner, M. Poschenrieder, W. Hen-
Kobayashi, S., see Nonomura, S. 198-200 (1996) 174 rion, I. Sieber, S. Koynov and R.
XXXVI Author index
Schwarz, Correlation between struc- Lee, J.-k., see Yamasaki, S. 198-200 (1996) 330
tural, optical and electrical proper- Lee, K.H., J.H. Yoo, B.Y. Moon, J.H.
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Krankenhagen, R., see Koynov, S. 198-200 (1996) 1012 Han and H.R. Park, Low tempera-
Kruangam, D., see Boonkosum, W. 198-200 (1996) 1226 ture fabrication of APCVD a-Si thin
Kubota, H., T. Tashiro, T. Fujiyoshi, T. film transistors with ion doped layer 198-200 (1996) 1141
Hirayu and M. Onuki, Localized Lee, K.S., see Kim, S.K. 198-200 (1996) 428
states of a-GaP:N by nitrogen ion Lee, W.H., C. Lee and J. Jang, Quantum
beam assisted deposition 198-200 (1996) 383 size effects on the conductivity in
Kugler, S., see Kadas, K. 198-200 (1996) 91 porous silicon 198-200 (1996)
Kugler, S., A. Janossy, K. Shimakawa, Lemmer, U., see Arkhipov, V.I. 198-200 (1996)
K. Hayashi and O. Chauvet, Tem- Leopold, D., see Santos-Filho, P. 198-200 (1996) 77
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resonance in amorphous carbon films 198-200 (1996) 646 Lerner, C., see Lips, K. 198-200 (1996) 267
Kulessa, T., see Stiebig, H. 198-200 (1996) 1185 Ley, L., see Hundhausen, M. 198-200 (1996) 230
Kumeda, M., see Zhang, J. 198-200 (1996) 338 Ley, L., see Stief, R. 198-200 (1996) 636
Kumeda, M., see Zhou, J.-H. 198-200 (1996) 359 Ley, L., see Schafer, J. 198-200 (1996) 641
Kumeda, M., see Min, H. 198-200 (1996) 375 Li, W., see Chen, K. 198—200 (1996) 833
Kumeda, M., see Masuda, A. 198-200 (1996) 395 Li, W., see Gu, X. 198-200 (1996) 1176
Kumeda, M., see Zhang, Q. 198-200 (1996) 495 Li, Z., see Huang, X. 198-200 (1996) 821
Kurando, T., see Nakayama, Y. 198-200 (1996) 657 Lievens, P., see Tikhomirov, V.K. 198-200 (1996) 119
Kurova, I.A., see Kazanskii, A.G. 198-200 (1996) 470 Link, D., see Chabloz, P. 198-200 (1996) 1159
Kusian, W., see Topic, M. 198-200 (1996) 1180 Lips, K., C. Lerner and W. Fuhs, Semi-
Kuske, J., see Schade, K. 198—200 (1996) 1050 classical model of electrically de-
Kwon, D., A. Gardner and J.D. Cohen, tected magnetic resonance in un-
New results using capacitance tran- doped a-Si:H 198-200 (1996) 267
sient studies to investigate deep de- Lips, K., T. Unold, Y. Xu and R:S.
fect relaxation in hydrogenated Crandall, Emission limited filling of
amorphous silicon 198-200 (1996) deep defects in transient capacitance
experiments 200 (1996) 525
Liu, H., L. Jiao, S. Semoushkina and
C.R. Wronski, Distribution of
LaCourse, W.C., see Hari, P. 198-200 (1996) charged defects in a:Si-H n-i
Lacquaniti, N., see Lazarouk, S. 198—200 (1996) Schottky barrier solar cells 198-200 (1996) 1168
La Monica, S., see Lazarouk, S. 198-200 (1996) Liu, Z., see Huang, X. 198-200 (1996) 821
Lasanda, G., see Pocsik, I. 198—200 (1996) Long, A.R., see Shimakawa, K. 198-200 (1996) 157
Laszlo, I., see Kadas, K. 198-200 (1996) Longeaud, C., see Dayoub, F. 198-200 (1996) 318
Lau, S.P., J.M. Marshall and L.R. Longeaud, C. and J.P. Kleider, Density
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highly conductive microcrystalline in annealed and light-soaked hydro-
SiC produced by laser crystallisation genated amorphous silicon layers 198-200 (1996) 355
of amorphous SiC 198-200 (1996) 907 Longeaud, C., see Middya, A.R. 198—200 (1996) 1067
Lauta, D., see de Cesare, G. 198-200 (1996) 1189 Louro, P., see Magarico, A. 198-200 (1996) 1207
Lavareda, G., see Fortunato, E. 198-200 (1996) 1212 Lu, Y., see Nguyen, H.V. 198-200 (1996) 853
Layadi, N., see Roca i Cabarrocas, P. 198-200 (1996) 871 Lu, Y., see Collins, R.W. 198-200 (1996) 981
Lazarouk, S., V. Bondarenko, P. Jaguiro, Lubianiker, Y., I. Balberg, E. Fefer and
N. Lacquaniti, S. La Monica, G. Y. Shapira, Following directly the
Maiello, G. Masini and A. Ferrari, effect of the various deep states on
Electrical characterization of visible the phototransport properties of a-
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Leblanc, F., see Ando, M. 198—200 (1996) 28 Lucovsky, G., Z. Jing, P. Santos-Filho,
Le Duigou, J., see Bardet, E. 198-200 (1996) 867 G. Stevens and A. Banerjee, Near-
Lee, C., see Hwang, C.-S. 198-200 (1996) 499 est-neighbor repulsion-perturbed sili-
Lee, C., see Lee, W.H. 198-200 (1996) 911 con monohydride bond-stretching vi-