Table Of Contentjourno CRYSTAL
Journal of Crystal Growth 115 (1991) 836-845
GROWTH
North-Holland
Author index
Akasaki, I., see Yanagase 115 (19913)0 4 Brandt, O., K. Ploog, L. Tapfer, M. Hohen-
Akasaki, I., see Kuwano 115 (19913)8 1 stein and F. Phillipp, Synthesis and struc-
Akasaki, I., see Hiramatsu 115 (19916)2 8 tural configuration of highly -strained
Akasaki, I., see Takeuchi 115 (19916)3 4 InAs films in GaAs 115 (1991) 99
Akasaki, I., see Koide 115 (19916)3 9
Akasaki, I., see Murakami 115 (19916)4 8 Chabot, B., see Scheel 115 (1991) 19
Akimoto, K., T. Miyajima, H. Okuyama and Chang, S.S., see Ando 115 (1991) 69
Y. Mori, Oxide interfacial layer in Au Cheng, H.C. and M.H. Juang, Growth of
ohmic contacts to p-type ZnSe 115 (1991) 683 single-crystalline CoSi, on (111)Si at low
Akinaga, M. and H. Fukuda, Thin film annealing temperatures by a nonultra-
growth of Bi(Pb)—Sr—Ca-—Cu-O on high vacuum method 115 (1991) 572
piezoelectric PbTiO, films 115 (19917)6 5 Cho, K.-I., see Choi 115 (19915)7 9
Amano, H., see Kuwano 115 (1991) 381 Choi, C.-K., H.-H. Park, J.Y. Lee, K.-I. Cho,
Amano, H., see Hiramatsu 115 (19916)2 8 M.-C. Paek, O.-J. Kwon, K.-H. Kim and
Amano, H., see Takeuchi 115 (1991) 634 S.-J. Yang, Formation and_ epitaxial
Amano, H., see Koide 115 (1991) 639 growth of titanium-disilicide on Si(111) 115 (19915)7 9
Amano, H., see Murukami 115 (1991) 648 Chokron, S., see Schieber 115 (1991) 31
Ambrosius, H.P.M.M., see Frijlink 115 (19912)0 3
Anayama, C., T. Tanahashi and K. Naka-
Daweritz, L., see Notzel 115 (19913)1 8
jima, Selective embedded growth of GaAs
Deutscher, C., see Schieber 115 (1991) 31
by MOVPE 115 (1991) 65
Ding Yong-qing, see Peng 115 (1991) 698
Anayama, C., see Domen 115 (1991) 529
Domen, K., K. Sugiura, C. Anayama, M.
Ando, H., N. Okamoto, A. Sandhu and T.
Kondo, M. Suguwara, T. Tanahashi and
Fujii, Gas-source MBE growth of n-type
K. Nakajima, Study on radiative effi-
InP using TEI, PH;, and Si,H, 115 (19914)6 4
ciency in AlGalnP/GaInP double-het-
Ando, S., S.S. Chang and T. Fukui, Selective
erostructures: influence of deep level in
epitaxy of GaAs /AIlGaAs on (111)B sub-
cladding layers 115 (19915)2 9
strates by MOCVD and applications to
Dorn, R., see Protzmann 115 (19912)4 8
nanometer structures 115 (1991) 69
Ariel, Y., see Schieber 115 (1991) 31
Ebe, H., A. Sawada, K. Maruyama, Y. Nishi-
Arima, Y. and T. Irisawa, Influence of sur-
jima, K. Shinohara and H. Takigawa, Tilt
face diffusion on the structure of growing
growth of CdTe epilayers on sapphire
crystal surface 115 (19914)2 8
substrates by MOCVD 115 (1991) 718
Asahi, H., see Okuno 115 (19912)3 6
Egawa, T., Y. Hayashi, T. Jimbo and M.
Asahi, T., see Murakami 115 (19916)4 8
Umeno, MOCVD-grown SQWs on Si
Asaka, N., see Isoda 115 (19913)8 8
with AlGaAs/ AlGaP intermediate lay-
Asami, K., see Okuno 115 (19912)3 6
ers and/or thermal cycle annealing: ap-
Aseev, A.L., A.V. Latyshev and A.B. Krasil-
plication to room-temperature CW lasers 115 (19915)2 4
nikov, Direct observation of monoatomic
Endo, K., see Ishiai 115 (1991) 762
step behaviour in MBE on Si by reflec-
tion electron microscopy 115 (19913)9 3
Azuma, M., see Nakayama 115 (1991) 831 Faschinger, W., P. Juza and H. Sitter, Ob-
servation of different reflected high-en-
ergy electron diffraction patterns during
Baar, D.J., see Hayashi 115 (1991) 782 atomic layer epitaxy growth of CdTe epi-
Bando, Y., see Terashima 115 (1991) 745 layers 115 (1991) 692
Berkowski, M., see Scheel 115 (1991) 19 Frijlink, P.M., J.L. Nicolas, H.P.M.M. Am-
Bimberg, D., see Grundmann 115 (1991) 150 brosius, R.W.M. Linders, C. Waucquez
0022-0248 /91/$05.00 © 1991 — Elsevier Science Publishers B.V. All rights reserved
Author index 837
and J.M. Marchal, The radial flow plane- Hamada, T., see Takei 115 (19913)0 9
tary reactor: low pressure versus atmo- Han, S.C., see Schieber 115 (1991) 31
spheric pressure MOVPE 115 (19912)0 3 Hara, K., see Kawai 115 (19912)1 6
Fujii, T., see Ueda 115 (19913)7 5 Hara, K., see Otoma 115 (19918)0 7
Fujii, T., see Ando 115 (19914)6 4 Hariu, T., see Takei 115 (19913)0 9
Fujii, T., see Nakata 115 (19915)0 4 Hariu, T., see Yamauchi 115 (19916)6 0
Fujii, Y., see Suzuki 115 (19916)2 3 Hase, T., see Kita 115 (19917)5 2
Fujimoto, M., see Katayama 115 (19912)8 9 Hase, T., H. Takahashi, H. Izumi, K. Ohata,
Fujimura, N., see Nagai 115 (19917)6 9 K. Suzuki, T. Morishita and S. Tanaka,
Fujimura, N., see Goto 115 (19918)1 6 Epitaxial growth of a-axis oriented laser
Fujimura, N., T. Ito and M. Kakinoki, Het- deposited YBa,Cu,0,_., thin films 115 (19917)8 8
eroepitaxy of LINDO, and LiNb,Oy, thin Hasegawa, Y., see Ikeda 115 (19912)1 1
films on C-cut sapphire 115 (19918)2 1 Hashimoto, M., see Tomita 115 (19912)9 9
Fujita, K., see Katahama 115 (1991) 141 Hashimoto, M., see Koide 115 (19916)3 9
Fujita, Sg., see Fujita 115 (19912)6 9 Hata, M., see Watanabe 115 (19913)7 1
Fujita, Sg., see Wu 115 (19916)6 4 Hata, M., see Isu 115 (19914)2 3
Fujita, Sz., S. Hirata and Sg. Fujita, Investi- Hatakoshi, G., see Suzuki 115 (19914)9 8
gation of photo-induced surface reactions Hatano, A., T. Izumiya and Y. Ohba, Mag-
by mass analysis in OMVPE of II-VI nesium doping using an adduct of
semiconductors 115 (1991) 269 trimethylaluminum and dimethylmagne-
Fujita, Sz., see Wu 115 (1991) 664 sium in metalorganic chemical vapor de-
Fujiyama, A., see Terashima 115 (1991) 745 position 115 (19914)5 5
Fukada, T., see Matsumura 115 (19912)7 9 Hattori, Y., T. Suzuki, T. Murata, T. Yabumi,
Fukuda, H., see Akinaga 115 (19917)6 5 K. Yasuda and M. Saji, Growth mecha-
Fukui, T. and H. Saito, Step-flow growth nism of 3C-SiC layers at a low tempera-
and fractional-layer superlattices on ture region in low-pressure CVD 115 (19916)0 7
GaAs vicinal surfaces by MOCVD 115 (1991) 61 Hayafuji, N., see Kadoiwa 115 (1991) 128
Fukui, T., see Ando 115 (1991) 69 Hayakawa, Y., see Ozawa 115 (19917)2 8
Fukui, T., see Kasu 115 (19914)0 6 Hayashi, H., see Yoshida 115 (1991) 533
Funato, K., see Nakamura 115 (19914)7 4 Hayashi, H., Y. Yamada, D.J. Baar, T. Sugi-
Furukawa, A., see Koide 115 (19913)6 5 moto, K. Sugawara, Y. Shiohara and S.
Furukawa, K., see Suzuki 115 (19916)2 3 Tanaka, Preparation of YBa,Cu,Oy, thin
Furukawa, S., see Tsuda 115 (19915)5 6 films by MOCVD 115 (1991) 782
Furukawa, T., see Nitta 115 (19915)1 5 Hayashi, Y., see Egawa 115 (1991) 524
Furukawa, Y., see Noda 115 (19918)0 2 Helak, Z., R. Korbutowicz, M. Panek, R.
Furuno, M., see Kircher 115 (19914)3 9 Paszkiewicz and M. Ttaczata, Ga—As—Bi
Futami, H., see Kasuga 115 (19917)1 1 phase equilibrium study by LPE for thin
solutions 115 (1991) 294
Hingerl, K., see Plotz 115 (1991) 186
Gardeniers, J.G.E. and L.J. Giling, Vapour
Hiraki, A., see Moon 115 (1991) 589
growth of silicon: growth anisotropy and
Hiramatsu, K., see Yanagase 115 (1991) 304
adsorption 115 (1991) 542
Hiramatsu, K., see Kuwano 115 (1991) 381
George, T., see Soga 115 (1991) 418
Hiramatsu, K., S. Itoh, H. Amano, I. Akasaki,
Giling, L.J., see Gardeniers 115 (19915)4 2
N. Kuwano, T. Shiraishi and K. Oki,
Gobel, E.O., see Protzmann 115 (1991) 248
Growth mechanism of GaN grown on
Gonda, S., see Okuno 115 (1991) 236
sapphire with AIN_ buffer layer by
Goto, S., N. Fujimura, T. Nishihara and T.
MOVPE 115 (1991) 628
Ito, Heteroepitaxy of zinc oxide thin films,
Hiramatsu, K., see Takeuchi 115 (1991) 634
considering non-epitaxial preferential
Hiramatsu, K., see Koide 115 (1991) 639
orientation 115 (1991) 816
Hiramatsu, K., see Murakami 115 (19916)4 8
Grundmann, M., A. Krost and D. Bimberg,
Hirata, S., see Fujita 115 (1991) 269
Antiphase-domain-free InP on Si(001):
Hiratani, Y., Y. Ohki and M. Sasaki, In-situ
optimization of MOCVD process 115 (1991) 150
selective-area epitaxy of a GaAs-based
Gunshor, R.L., M. Kobayashi, N. Otsuka
heterostructure using a GaAs oxide layer
and A.V. Nurmikko, Properties of II-
as a mask 115 (1991) 74
VI/III-V heterovalent interfaces 115 (1991) 652
Hiratani, Y., see Ohki 115 (19912)2 6
Hirono, S., see Kanisawa 115 (1991) 348
838 Author index
Hobbs, A., see Ueda 115 (19911)3 3 Ito, H., see Kawai 115 (19912)1 6
Hohenstein, M., see Brandt 115 (1991) 99 Ito, T., see Moon 115 (19915)8 9
Honda, T., see Otoma 115 (19918)0 7 Ito, T., see Nagai 115 (19917)6 9
Hongo, S., see Urano 115 (19914)1 1 Ito, T., see Goto 115 (19918)1 6
Horikoshi, Y., see Sato 115 (19912)2 1 Ito, T., see Fujimura 115 (19918)2 1
Horikoshi, Y., see Sudersena Rao 115 (19913)2 8 Itoh, K., see Kuwano 115 (19913)8 1
Horikoshi, Y., see Ramesh 115 (19913)3 3 Itoh, S., see Hiramatsu 115 (19916)2 8
Horikoshi, Y., see Kobayashi 115 (19913)5 3 Itoh, T., see Nitta 115 (19915)1 5
Hoshino, A., see Isoda 115 (19913)8 8 Iwata, H., see Mochizuki 115 (19916)8 7
Hoshino, A., S. Isoda and T. Kobayashi, Izumi, H., see Hase 115 (19917)8 8
Epitaxial growth of organic crystals on Izumiya, T., see Hatano 115 (19914)5 5
organic substrates — polynuclear aro-
matic hydrocarbons 115 (19918)2 6
Huang, Bai-Biao, see Liu 115 (1991) 83 Jiang, Min-Hua, see Liu 115 (1991) 83
Jiang, Z.K., see Itakura 115 (19911)5 4
Jimbo, T., see Itakura 115 (19911)5 4
Jimbo, T., see Suzuki 115 (19911)5 8
Iba, Y., see Kasuga 115 (1991) 711 Jimbo, T., see Soga 115 (19914)1 8
Ichimura, M. and T. Wada, Calculation of Jimbo, T., see Egawa 115 (19915)2 4
native defect concentrations in GaAs Joyce, B.A., J. Zhang, T. Shirata and J.H.
grown by organometallic vapor-phase Neave, Dynamics and kinetics of MBE
epitaxy 115 (1991) 479 growth 115 (1991) 338
Ichino, K., see Wu 115 (19916)6 4 Juang, M.H., see Cheng 115 (1991) 572
Ihara, M., see Ueda 115 (19917)7 4 Juza, P., see Faschinger 115 (1991) 692
Ikeda, H., K. Saitoh, Y. Hasegawa, A. Kouk-
itu and H. Seki, Thermodynamic analysis
of GaAs growth by cold-wall metalor- Kadoiwa, K., T. Nishimura, N. Hayafuji, M.
ganic-chloride vapor phase epitaxy 115 (19912)1 1 Miyashita, H. Kizuki and K. Mizuguchi,
Ikeda, S., see Kakishita 115 (1991) 793 Study of initial buffer layer in GaAs-on-Si
Imaizumi, T., M. Seiwa and O. Oda, Delta- growth 115 (1991) 128
doped GaAs grown by chloride CVD 115 (19914)4 3 Kajimoto, A., see Yoshimoto 115 (1991) 265
Imamura, Y., see Ogasawara 115 (1991) 254 Kakinoki, M., see Fujimura 115 (19918)2 1
Inoue, N., see Yokoyama 115 (1991) 89 Kakishita, K., S. Ikeda and T. Suda, Zn,P,
Inoue, N., see Kanisawa 115 (1991) 348 epitaxial growth by MOCVD 115 (19917)9 3
Irisawa, T., see Arima 115 (1991) 428 Kakuta, J., see Matsumura 115 (19912)7 9
Ishiai, J., S. Yamada, S. Yoshizawa and K. Kaldis, E., see Zha 115 (1991) 43
Endo, Preparation of Bi,Sr>zCa,,_ ;Cu,,- Kamada, H., see Ogasawara 115 (19912)5 4
O,,44 (n=1, 2, 3 and 4) thin films by Kamigaki, K., see Terashima 115 (19917)4 5
MOCVD 115 (1991) 762 Kanaji, T., see Urano 115 (19914)1 1
Ishihara, E., see Matsumoto 115 (1991) 674 Kaneko, S., M. Tanaka, K. Masu, K. Tsub-
Ishikawa, M., see Suzuki 115 (19914)9 8 ouchi and N. Mikoshiba, Epitaxial growth
Isoda, S., I. Kubo, A. Hoshino, N. Asaka, H. of AIN film by low-pressure MOCVD in
Kurata and T. Kobayashi, Molecular gas-beam-flow reactor 115 (19916)4 3
imaging of epitaxially grown organic dou- Kaneko, T., see Okuno 115 (19912)3 6
ble-layer 115 (1991) 388 Kanisawa, K., J. Osaka, S. Hirono and N.
Isoda, S., see Hoshino 115 (1991) 826 Inoue, In situ measurement method of
Isshiki, M., see Mochizuki 115 (1991) 687 GaAs surface coverage using secondary
Isu, T., see Watanabe 115 (19913)7 1 electron intensity 115 (1991) 348
Isu, T., M. Hata, Y. Morishita, Y. Nomura Kano, H., see Tomita 115 (1991) 299
and Y. Katayama, Surface diffusion Kasai, K., see Kikkawa 115 (1991) 448
length during MBE and MOMBE meas- Kasai, Y. and S. Sakai, In-situ growth of
ured from distribution of growth rates 115 (1991) 423 Bi-Sr—Ca-—Cu oxide superconducting
Itakura, H., T. Suzuki, Z.K. Jiang, T. Soga, thin films by molecular beam epitaxy with
T. Jimbo and M. Umeno, Effect of In- a pure ozone source 115 (1991) 758
GaAs/InP strained layer superlattice in Kasu, M., H. Saito and T. Fukui, Step-den-
InP-on-Si 115 (1991) 154 sity dependence of growth rate on vicinal
Itani, Y., see Okuno 115 (19912)3 6 surface of MOCVD 115 (1991) 406
Itaya, K., see Suzuki 115 (19914)9 8 Kasuga, M., see Yoshioka 115 (1991) 705
Author index
Kasuga, M., H. Futami and Y. Iba, Vapor pyrolysis process on substrate surface in
phase epitaxy of CdTe on sapphire and GaAs MOCVD 115 (19913)5 3
GaAs 115 (1991) 711 Kobayashi, T., see Isoda 115 (19913)8 8
Katahama, H., Y. Matsuda, Y. Shiba and K. Kobayashi, T., see Hoshino 115 (19918)2 6
Fujita, Raman scattering study on the Kodama, K., see Sakuma 115 (19913)2 4
first step growth of GaAs on Si grown by Kodama, K., see Ohtsuka 115 (19914)6 0
MOCVD 115 (1991) 141 Koga, A., see Kuwano 115 (19913)8 1
Katayama, T., M. Fujimoto, M. Shimizu and Koide, N., H. Kato, M. Sassa, S. Yamasaki,
T. Shiosaki, Photo-MOCVD of PbTiO, K. Manabe, M. Hashimoto, H. Amano,
thin films 115 (1991) 289 K. Hiramatsu and I. Akasaki, Doping of
Katayama, Y., see Watanabe 115 (1991) 371 GaN with Si and properties of blue
Katayama, Y., see Isu 115 (1991) 423 m/i/n/n* GaN LED with Si-doped
Kato, F., see Teraguchi 115 (1991) 798 n*-layer by MOVPE 115 (19916)3 9
Kato, H., see Koide 115 (1991) 639 Koide, Y., see Ohshima 115 (1991) 106
Kato, K., T. Kusunoki, C. Takenaka, T. Koide, Y., A. Furukawa, S. Zaima and Y.
Tanahashi and K. Nakajima, Reduction Yasuda, In-situ RHEED study of growth
of dislocations in InGaAs layer on GaAs processes in the initial stage of SiGe al-
using epitaxial lateral overgrowth 115 (1991) 174 loy film deposition by gas source molecu-
Kato, M., J. Murota and S. Ono, Control of lar beam epitaxy 115 (1991) 365
composition and deposition rate in Si—Ge Kokubun, Y., see Suzuki 115 (19914)9 8
CVD epitaxy on Si 115 (1991) 117 Komeno, J., see Kikkawa 115 (1991) 448
Kato, T., see Matsumoto 115 (1991) 674 Komiyama, S., see Terashima 115 (1991) 745
Kato, Y., see Sasaoka 115 (1991) 94 Konagai, M., see Teraguchi 115 (1991) 798
Katsuyama, T., see Yoshida 115 (1991) 533 Kondo, M., J. Okazaki, H. Sekiguchi, T.
Kawai, H., see Nakamura 115 (1991) 474 Tanahashi, S. Yamazaki and K. Naka-
Kawai, J.. H. Ito and K. Hara, MOVPE jima, Highly-uniform large-area MOVPE
growth of GaAs using metallic arsenic growth of InGaAsP by controlled stagna-
and trimethylgallium 115 (1991) 216 tion point flow 115 (19912)3 1
Kawakami, Y., see Wu 115 (1991) 664 Kondo, M., see Domen 115 (19915)2 9
Kijima, S., see Sato 115 (1991) 740 Korbutowicz, R., see Helak 115 (19912)9 4
Kikkawa, T., T. Ohori, H. Tanaka, K. Kasai Koukitu, A., see Ikeda 115 (19912)1 1
and J. Komeno, Effective Si planar dop- Krasilnikov, A.B., see Aseev 115 (19913)9 3
ing of GaAs by MOVPE using tertiary- Krost, A., see Grundmann 115 (19911)5 0
butylarsine 115 (1991) 448 Kubo, I., see Isoda 115 (19913)8 8
Kim, K.-H., see Choi 115 (1991) 579 Kudo, K., see Lee 115 (19911)6 4
Kimoto, T., see Yoo 115 (1991) 733 Kudo, Y., see Sato 115 (19917)4 0
Kimura, T., see Ueda , 115 (1991) 774 Kuech, T.F., The use of chloride based pre-
Kinoshita, S., Y. Suzuki and T. Nishinaga, cursors in metalorganic vapor phase epi-
Epitaxial lateral overgrowth of Si on taxy 115 (1991) 52
non-planar substrate 115 (1991) 561 Kukimoto, H., see Otoma 115 (19918)0 7
Kircher, R., M. Furuno, J. Murota and S. Kumugawa, M., see Ozawa 115 (19917)2 8
Ono, Low-temperature epitaxial growth Kuniyoshi, S., see Lee 115 (19911)6 4
of in-situ doped silicon films 115 (1991) 439 Kurasawa, T., see Noda 115 (19918)0 2
Kita, R., T. Hase, M. Sasaki, T. Morishita Kurata, H., see Isoda 115 (19913)8 8
and S. Tanaka, Epitaxial growth of CuO Kuroda, T., see Maki 115 (19915)6 7
thin films by in situ oxidation of Cu thin Kusunoki, T., see Kato 115 (19911)7 4
films 115 (19917)5 2 Kusunoki, T., C. Takenaka and K. Nakajima,
Kitagawa, F., see Tomita 115 (19912)9 9 Growth of ternary Ing ,4Gapg,As bulk
Kitahara, K., see Ueda 115 (19911)3 3 crystal with uniform composition at con-
Kizuki, H., see Kadoiwa 115 (19911)2 8 stant temperature through GaAs supply 115 (1991) 723
Kobayashi, K., see Shima 115 (19913)5 9 Kuwahara, H., see Wang 115 (1991) 261
Kobayashi, M., see Gunshor 115 (19916)5 2 Kuwano, N., see Matsumura 115 (1991) 194
Kobayashi, N., see Sato 115 (19912)2 1 Kuwano, N., T. Shiraishi, A. Koga, K. Oki,
Kobayashi, N., see Ramesh 115 (19913)3 3 K. Hiramatsu, H. Amano, K. Itoh and I.
Kobayashi, N., Y. Yamauchi and Y. Akasaki, Cross-sectional TEM study of
Horikoshi, In-situ optical monitoring of microsctructures in MOVPE GaN films
840 Author index
grown on a-Al,O, with a buffer layer of Matsunami, H., see Yoshimoto 115 (1991) 265
AIN 115 (19913)8 1 Matsunami, H., see Yoo 115 (19917)3 3
Kuwano, N., see Hiramatsu 115 (1991) 628 Mikoshiba, N., see Sakuraba 115 (1991) 79
Kwon, O.-J., see Choi 115 (19915)7 9 Mikoshiba, N., see Kaneko 115 (1991) 643
Minemura, T., see Yazawa 115 (19915)1 9
Latyshev, A.V., see Aseev 115 (1991) 393 Ming, Nai-Ben and Hua Li, Twin lamella
mechanism of fcc crystal growth: the
Lee, J., K. Kudo, S. Kuniyoshi, K. Tanaka,
Monte Carlo simulation approach 115 (1991) 199
Y. Makita and A. Yamada, Formation of
Miura, A., see Nakayama 115 (1991) 831
InAs microstructures on variously ori-
ented GaAs substrates 115 (1991) 164 Miyajima, T., see Akimoto 115 (1991) 683
Lee, J.Y., see Choi 115 (1991) 579 Miyashita, M., see Kadoiwa 115 (1991) 128
Li, Hua, see Ming 115 (1991) 199 Mizuguchi, K., see Kadoiwa 115 (1991) 128
Linders, R.W.M., see Frijlink 115 (1991) 203 Mochizuki, K., H. Iwata, M. Isshiki and K.
Masumoto, Hetero-epitaxial growth of
Liu, Li-Qiang, Bai-Biao Huang, Hong-Wen
Pb, _,Cd,S,_,Se, thin film by the hot-
Ren and Min-Hua Jiang, Surface adsorp-
wall method 115 (1991) 687
tion and carbon incorporation in ALE
GaAs growth process 115 (1991) 83 Moon, J., T. Ito, J.S. Mo and A. Hiraki,
Lorberth, J., see Protzmann 115 (1991) 248 Formation of TiN by nitridation of mag-
netron sputtered Ti films using mi-
crowave plasma CVD 115 (1991) 589
Ma, J.S., see Moon 115 (1991) 589 Mori, Y., see Akimoto 115 (19916)8 3
Maharizi, M., see Schieber 115 (1991) 31 Morishita, T., see Kita 115 (1991) 752
Maki, K., Y. Shigeta and T. Kuroda, Critical Morishita, T., see Hase 115 (1991) 788
thickness for growth of epitaxial grains in
Morishita, Y., see Isu 115 (1991) 423
silicon film deposited on superlattice sur-
Morita, Y. and T. Narusawa, Growth and
face of silicon (111) 115 (19915)6 7
characterization of Cu—Al—Se system by
Makita, Y., see Lee 115 (19911)6 4
MBE 115 (1991) 811
Manabe, K., see Koide 115 (19916)3 9
Mukai, K., M. Sugawara and S. Yamazaki,
Marchal, J.M., see Frijlink 115 (19912)0 3
Interdiffusion process in InGaAs/InP
Marschner, T., see Protzmann 115 (19912)4 8
quantum well structures 115 (1991) 433
Maruno, S., see Nakao 115 (19913)1 3
Murakami, H., T. Asahi, H. Amano, K. Hi-
Maruyama, H., K. Pak, K. Sakakibara, M.
ramatsu, N. Sawaki and I. Akasaki,
Nakamura, Y. Takano and H. Yonezu,
Growth of Si-doped Al,Ga,_,N on
Solid phase epitaxial growth of InP on
(0001) sapphire substrate by metalor-
GaAs 115 (1991) 180
ganic vapor phase epitaxy 115 (19916)4 8
Maruyama, K., see Ebe 115 (1991) 718
Muranoi, T., PL and SIMS of vapor phase
Masu, K., see Kaneko 115 (1991) 643
epitaxial ZnSe films 115 (1991) 679
Masumoto, K., see Mochizuki 115 (1991) 687
Murata, T., see Hattori 115 (1991) 607
Masumoto, K., see Noda 115 (1991) 802
Murota, J., see Sakuraba 115 (1991) 79
Matsuda, Y., see Katahama 115 (1991) 141
Murota, J., see Kato 115 (1991) 117
Matsuda, Y., see Terashima 115 (1991) 745
Murota, J., see Kircher 115 (1991) 439
Matsumoto, K. and K. Uchida, Photolumi-
nescence of deep levels induced by sup-
ppm H,O in AlGaAs grown by MOVPE 115 (1991) 484 Nagai, S., N. Fujimura, T. Ito and K. Shi-
Matsumoto, T., T. Kato and E. Ishihara, raishi, The crystallization and growth of
Interface characterization of heteroepi- the high-7, phase in the Bi-Sr-Ca—Cu-
taxial ZnSe layers on GaAs substrates by O thin films 115 (1991) 769
cathodoluminescence 115 (1991) 674 Nagano, K., see Urano 115 (1991) 411
Matsumura, N., K. Senga, J. Kakuta, T. Nagasawa, H. and Y. Yamaguchi, Suppres-
Fukada and J. Saraie, Study on the be- sion of etch pit and hillock formation on
havior of surface adatoms during pho- carbonization of Si substrate and low
toassisted MBE of ZnSe and improve- temperature growth of SiC 115 (19916)1 2
ment of surface morphology 115 (1991) 279 Nakajima, K., see Anayama 115 (1991) 65
Matsumura, S., K. Takano, N. Kuwano and Nakajima, K., see Kato 115 (19911)7 4
K. Oki, Dynamical Monte Carlo simula- Nakajima, K., see Kondo , 115 (19912)3 1
tion of L1,(CuPt)-type ordering during Nakajima, K., see Domen 115 (19915)2 9
(001) epitaxial growth of III-V semicon- Nakajima, K., see Kusunoki 115 (19917)2 3
ductor alloys 115 (1991) 194 Nakajima, S., see Suzuki 115 (19916)2 3
Author index
Nakamura, F., K. Taira, K. Funato and H. Notzel, R., L. Daweritz and K. Ploog, Direct
Kawai, Se and Te doping in LP- synthesis of semiconductor quantum
MOCVD-grown GaSb using H,Se and wires by molecular-beam epitaxy on (311)
DETe 115 (1991) 474 surfaces 115 (19913)1 8
Nakamura, M., see Maruyama 115 (1991) 180 Nurmikko, A.V., see Gunshor 115 (19916)5 2
Nakamura, T., see Ueda 115 (19913)7 5
Nakao, S., H. Watatani, S. Maruno and M.
Noda, Effects of discharge current and
substrate temperature on the microstruc- Obata, H., see Tatsuyama 115 (19911)1 2
ture of diamond films deposited by DC Oda, O., see Imaizumi 115 (19914)4 3
plasma CVD 115 (1991) 313 Ogasawara, M., H. Kamada and Y. Ima-
Nakata, Y., see Ueda 115 (1991) 375 mura, Characterization of InP grown by
Nakata, Y., O. Ueda and T. Fujii, Two-di- low-pressure MOVPE using ethyldimeth-
mensional electron gas mobility in In- ylindium and tertiarylbutylphosphine 115 (19912)5 4
GaAs/N-InAlAs_ heterostructures with Ogawa, H., see Nishio 115 (19912)8 4
ordered InGaAs grown on (110)-oriented Ogawa, K., see Nitta 115 (19915)1 5
InP substrates by molecular beam epitaxy 115 (1991) 504 Ohata, K., see Hase 115 (19917)8 8
Nakayama, T., A. Miura and M. Azuma, Ohba, Y., see Hatano 115 (19914)5 5
Thin film growth characteristics of charge Ohki, Y., see Hiratani 115 (1991) 74
transfer complexes 115 (19918)3 1 Ohki, Y., Y. Hiratani and M. Sasaki, Large
Narusawa, T., see Yokogawa 115 (19916)7 0 difference in the decomposition rate of
Narusawa, T., see Morita 115 (19918)1 1 metalorganics between on As- and Ga-
Neave, J.H., see Joyce 115 (19913)3 8 saturated GaAs (111)B surfaces 115 (19912)2 6
Nicolas, J.L., see Frijlink 115 (19912)0 3 Ohno, T., Growth of small particles of
Nishihara, T., see Goto 115 (19918)1 6 iron—cobalt alloys prepared by gas-
Nishijima, Y., see Ebe 115 (19917)1 8 evaporation technique 115 (1991) 602
Nishikawa, Y., see Suzuki 115 (19914)9 8 Ohori, T., see Kikkawa 115 (19914)4 8
Nishimura, T., see Kadoiwa 115 (19911)2 8 Ohshima, N., Y. Koide, S. Zaima and Y.
Nishinaga, T., see Uen 115 (19911)2 2 Yasuda, Atomic mixing phenomena and
Nishinaga, T., see Sakawa 115 (19911)4 5 changes in faceted structure of Ge films
Nishinaga, T. and T. Suzuki, The role of step grown on (100)Si by thermal annealing 115 (1991) 106
kinetics in MBE of compound semicon- Ohshita, Y., F. Uesugi and I. Nishiyama,
ductors 115 (1991) 398 Reaction of Si,H, molecule on a silicon
Nishinaga, T., see Kinoshita 115 (1991) 561 surface 115 (19915)5 1
Nishino, S., see Takahashi 115 (1991) 617 Ohtsuka, N., see Ueda 115 (1991) 133
Nishio, M., H. Ogawa and A. Yoshida, Ef- Ohtsuka, N., see Sakuma 115 (1991) 324
fect of Ar laser-illumination upon ZnTe Ohtsuka, N., K. Kodama, M. Ozeki and Y.
growth in atmospheric-pressure MOVPE 115 (1991) 284 Sakuma, Extremely high Be doping of
Nishiyama, I., see Ohshita 115 (1991) 551 InGaAs by low-temperature atomic layer
Nishizawa, J., Molecular layer epitaxy and its epitaxy 115 (19914)6 0
fundaments 115 (1991) 12 Oikawa, S., see Tsuda 115 (19915)5 6
Nishizawa, J., see Suzuki 115 (1991) 498 Okamoto, N., see Ando 115 (19914)6 4
Nitta, S.. K. Ogawa, T. Furukawa, T. Itoh Okamoto, T., see Yoshikawa 115 (19912)7 4
and §S. Nonomura, Optical reflectance Okazaki, J., see Kondo 115 (19912)3 1
spectra of amorphous random multilay- Oki, K., see Matsumura 115 (19911)9 4
ers and the classical localization of light 115 (1991) 515 Oki, K., see Kuwano 115 (19913)8 1
Nittono, O., see Sugawara 115 (1991) 596 Oki, K., see Hiramatsu 115 (19916)2 8
Noda, M., see Nakao 115 (1991) 313 Okuno, Y., H. Asahi, T. Kaneko, Y. Itani, K.
Noda, S., see Tabuchi 115 (1991) 169 Asami and S. Gonda, MOMBE growth
Noda, S., see Wang 115 (1991) 261 of AlGaSb 115 (19912)3 6
Noda, Y., T. Kurasawa, Y. Furukawa and K. Okuyama, H., see Akimoto 115 (19916)8 3
Masumoto, Growth of AgGaS, single Ono, S., see Sakuraba 115 (1991) 79
crystals by chemical transport with halo- Ono, S., see Kato 115 (19911)1 7
gen 115 (1991) 802 Ono, S., see Kircher 115 (19914)3 9
Nomura, Y., see Isu 115 (1991) 423 Ono, S., see Yamauchi 115 (19916)6 0
Nonomura, S., see Nitta 115 (1991) 515 Osaka, J., see Kanisawa 115 (19913)4 8
842 Author index
Otoma, H., T. Honda, K. Hara, J. Yoshino Sakawa, S. and T. Nishinaga, Faceting of
and H. Kukimoto, Growth of CuGaS, by LPE GaAs grown on a _ misoriented
alternating-source-feeding MOVPE 115 (19918)0 7 Si(100) substrate 115 (1991) 145
Otsuka, N., see Gunshor 115 (1991) 652 Sakuma, Y., M. Ozeki, K. Kodama and N.
Oyama, Y., see Suzuki 115 (1991) 498 Ohtsuka, InAs/InP short-period strain-
Ozasa, K., see Yoshimoto 115 (19912)6 5 ed-layer superlattices grown by atomic
Ozawa, T., Y. Hayakawa and M. Kumagawa, layer epitaxy 115 (1991) 324
Interface instability in the growth of Sakuma, Y., see Ohtsuka 115 (1991) 460
Ga,_,In,As,Sb,_, and thermodynamic Sakuraba, M., J. Murota, N. Mikoshiba and
considerations 115 (1991) 728 S. Ono, Atomic layer epitaxy of germa-
Ozeki, M., see Ueda 115 (1991) 133 nium on silicon using flash heating chem-
Ozeki, M., see Sakuma 115 (1991) 324 ical vapor deposition 115 (1991) 79
Ozeki, M., see Ohtsuka 115 (1991) 460 Samanta, L.K., see Sato 115 (19917)4 0
Ozeki, M., see Takanohashi 115 (1991) 538 Sandhu, A., see Ando 115 (19914)6 4
Saraie, J., see Matsumura 115 (19912)7 9
Paek, M.-C., see Choi 115 (1991) 579 Saraie, J., see Takahashi 115 (19916)1 7
Pak, K., see Maruyama 115 (1991) 180 Sasaki, A., see Tabuchi 115 (19911)6 9
Panek, M., see Helak 115 (1991) 294 Sasaki, A., see Wang 115 (19912)6 1
Park, H.-H., see Choi 115 (1991) 579 Sasaki, A., Optical and luminescence prop-
Paszkiewicz, R., see Helak 115 (1991) 294 erties of disordered superlattices 115 (1991) 490
Sasaki, M., see Hiratani 115 (1991) 74
Peng Rui-wu, Xu Fei and Ding Yong-gqing,
Sasaki, M., see Ohki 115 (1991) 226
Kinetic and interface studies for
Sasaki, M., see Kita 115 (1991) 752
MOCVD CdTe and HgCdTe epilayers
grown on GaAs substrates 115 (1991) 698 Sasaoka, C., Y. Kato and A. Usui, Tempera-
Philipp, F., see Brandt 115 (1991) 99 ture programmed desorption study of
Piechotka, M., see Zha 115 (1991) 43 gallium chloride adsorbed on GaAs sur-
Ploog, K., see Brandt 115 (1991) 99 faces 115 (1991) 94
Ploog, K., see Notzel 115 (1991) 318 Sassa, M., see Koide 115 (1991) 639
Sato, H., T. Yamada and H. Sugiura, New
Plotz, W.M., K. Hingerl and H. Sitter, Monte
Organometallic sources for MOMBE/
Carlo simulation of epitaxial growth in
MBE and ALE mode 115 (1991) 186 laser-assisted MOMBE 115 (1991) 241
Protzmann, H., T. Marschner, O. Zsebok, Sato, K., Y. Kudo, S. Kijima and L.K.
Samanta, Characterization of I-III-VI,
W. Stolz, E.O. Gobel, R. Dorn and J.
bulk crystals grown by chemical vapor
Lorberth, Group III hydride precursors
deposition: application of phase-shift-dif-
for the metalorganic vapour phase epi-
taxy (MOVPE) of (AlGa)As/GaAs het- ference spectroscopy 115 (1991) 740
erostructures 115 (1991) 248 Sato, M., N. Kobayashi and Y. Horikoshi,
Effect of precracking of organometallics
and arsine on growth of GaAs 115 (19912)2 1
Racah, D., see Schieber 115 (1991) 31
Sato, M., see Weyers 115 (19914)6 9
Raizman, A., see Schieber 115 (1991) 31
Satoh, T., see Terashima 115 (19917)4 5
Ramesh, S., N. Kobayashi and Y. Horikoshi,
Sawada, A., see Ebe 115 (19917)1 8
Study of high-quality ZnSe /GaAs/ZnSe
Sawaki, N., see Takeuchi 115 (19916)3 4
single quantum well and ZnSe/GaAs
Sawaki, N., see Murakami 115 (19916)4 8
heterostructures 115 (1991) 333
Scheel, H.J., M. Berkowski and B. Chabot,
Ren, Hong-Wen, see Liu 115 (1991) 83
Problems in epitaxial growth of high-7,
Rotter, S., see Schieber 115 (1991) 31
superconductors 115 (1991) 19
Schieber, M., S.C. Han, Y. Ariel, S. Chokron,
Saito, H., see Fukui 115 (1991) 61 T. Tsach, M. Maharizi, C. Deutscher, D.
Saito, H., see Kasu 115 (19914)0 6 Racah, A. Raizman and S. Rotter, Com-
Saito, H., see Suzuki 115 (19916)2 3 parison of thin films of YBa,Cu;0,_,
Saitoh, K., see Ikeda 115 (19912)1 1 deposited by physical (laser ablation) and
Saji, M., see Hattori 115 (19916)0 7 chemical (OMCVD) methods for device
Sakai, S., see Kasai 115 (19917)5 8 applications 115 (1991) 31
Sakakibara, K., see Maruyama 115 (19911)8 0 Seiwa, M., see Imaizumi 115 (1991) 443
Sakaue, K., see Urano 115 (19914)1 1 Seki, H., see Ikeda 115 (1991) 211
Sakawa, S., see Uen 115 (19911)2 2 Sekiguchi, H., see Kondo 115 (1991) 231
Author index 843
Senga, K., see Matsumura 115 (1991) 279 emission of SiC blue LEDs grown by
Shiba, Y., see Katahama 115 (1991) 141 step-controlled CVD 115 (1991) 623
Shigeta, Y., see Maki 115 (1991) 567 Suzuki, K., see Hase 115 (1991) 788
Shima, M., Y. Tanishiro, K. Kobayashi and Suzuki, T., see Itakura 115 (1991) 154
K. Yagi, UHV-REM study of hemoepi- Suzuki, T., T. Soga, T. Jimbo and M. Umeno,
taxial growth of Si 115 (19913)5 9 Growth mechanism of GaP on Si sub-
Shimizu, M., see Katayama 115 (19912)8 9 strate by MOVPE 115 (1991) 158
Shimura, K., see Terashima 115 (19917)4 5 Suzuki, T., see Nishinaga 115 (1991) 398
Shinohara, K., see Ebe 115 (19917)1 8 Suzuki, T., see Hattori 115 (1991) 607
Shinohara, M., see Yokoyama 115 (1991) 89 Suzuki, Y., see Kinoshita 115 (1991) 561
Shiohara, Y., see Hayashi 115 (19917)8 2
Shiosaki, T., see Katayama 115 (19912)8 9
Shiraishi, K., see Nagai 115 (19917)6 9 Tabuchi, M., S. Noda and A. Sasaki, Strain
Shiraishi, T., see Kuwano 115 (19913)8 1 energy and critical thickness of het-
Shiraishi, T., see Hiramatsu 115 (19916)2 8 eroepitaxial InGaAs layers on GaAs sub-
Shirata, T., see Joyce 115 (19913)3 8 strate 115 (1991) 169
Sitter, H., see Plotz 115 (19911)8 6 Tacano, M., see Sugiyama 115 (1991) 509
Sitter, H., see Faschinger 115 (19916)9 2 Taira, K., see Nakamura 115 (1991) 474
Soga, T., see Itakura 115 (19911)5 4 Tajima, Y., see Suzuki 115 (1991) 623
Soga, T., see Suzuki 115 (19911)5 8 Takahashi, H., see Hase 115 (1991) 788
Soga, T., T. George, T. Jimbo and M. Takahashi, K., S. Nishino and J. Saraie, Ef-
Umeno, Nucleation mechanisms for com- fect of acceptor impurity addition in low
pound semiconductors grown on Si by temperature growth of 3C-SiC 115 (1991) 617
MOCVD 115 (1991) 418 Takahashi, K., see Teraguchi 115 (1991) 798
Stolz, W., see Protzmann 115 (1991) 248 Takano, K., see Matsumura 115 (1991) 194
Stringfellow, G.B., Fundamental aspects of Takano, Y., see Maruyama 115 (1991) 180
vapor growth and epitaxy 115(1991) 1 Takanohashi, T. and M. Ozeki, Exciton-ab-
Suda, T., see Kakishita 115 (1991) 793 sorption transitions in (GaP),(GaAs),,/
Sudersena Rao, T. and Y. Horikoshi, Growth GaAs atomic / layer superlattices 115 (1991) 538
of (GaAs), _,(Si,), metastable alloys us- Takei, H., T. Hamada and T. Hariu,
ing migration-enhanced epitaxy 115 (1991) 328 Plasma-assisted epitaxy on InAs layers on
Sugawara, A. and O. Nittono, Interface GaAs 115 (1991) 309
structures of Pt /Au(001) epitaxial bilayer Takenaka, C., see Kato 115 (1991) 174
films prepared by means of ion beam Takenaka, C., see Kusunoki 115 (1991) 723
sputtering 115 (19915)9 6 Takeuchi, T., H. Amano, K. Hiramatsu, N.
Sugawara, K., see Hayashi 115 (19917)8 2 Sawaki and I. Akasaki, Growth of single
Sugawara, M., see Mukai 115 (19914)3 3 crystalline GaN film on Si substrate using
Sugimoto, T., see Hayashi 115 (19917)8 2 3C-SiC as an intermediate layer 115 (19916)3 4
Sugiura, H., see Sato 115 (19912)4 1 Takeuchi, Y., see Sugiyama 115 (19915)0 9
Sugiura, K., see Domen 115 (19915)2 9 Takigawa, H., see Ebe 115 (19917)1 8
Sugiyama, Y., Y. Takeuchi and M. Tacano, Tanahashi, T., see Anayama 115 (1991) 65
High electron mobility pseudomorphic Tanahashi, T., see Kato 115 (19911)7 4
Ing 52 Alo 4gAs/InggGag.As _ hetero- Tanahashi, T., see Kondo 115 (19912)3 1
structure on InP grown by flux-stabilized Tanahashi, T., see Domen 115 (19915)2 9
MBE 115 (1991) 509 Tanaka, H., see Kikkawa 115 (19914)4 8
Suguwara, M., see Domen 115 (1991) 529 Tanaka, K., see Lee 115 (19911)6 4
Susuki, M., M. Ishikawa, K. Itaya, Y. Tanaka, M., see Kaneko 115 (19916)4 3
Nishikawa, G. Hatakoshi, Y. Kokubun, J. Tanaka, S., see Yanagase 115 (19913)0 4
Nishizawa and Y. Oyama, Electrical Tanaka, S., see Kita 115 (19917)5 2
characterization of Si-donor-related shal- Tanaka, S., see Hayashi 115 (19917)8 2
low and deep states in InGaAIP alloys Tanaka, S., see Hase 115 (19917)8 8
grown by metalorganic chemical vapor Tanbo, T., see Tatsuyama 115 (19911)1 2
deposition 115 (1991) 498 Tanishiro, Y., see Shima 115 (19913)5 9
Suzuki, A., Y. Fujii, H. Saito, Y. Tajima, K. Tapfer, L., see Brandt 115 (1991) 99
Furukawa and S. Nakajima, Effect of the Tatsuyama, C., T. Terasaki, H. Obata, T.
junction interface properties on blue Tanbo and H. Ueba, Effect of the growth
844 Author index
temperature on the RHEED pattern of Wada, T., see Ichimura 115 (1991) 479
thin Ge layers on Si(001)-2 x 1 surface 115 (1991) 112 Wakahara, A., see Wang 115 (1991) 261
Teraguchi, N., M. Konagai, F. Kato and K. Wang, X.L., A. Wakahara, H. Kuwahara, S.
Takahashi, Growth and characterization Noda and A. Sasaki, Reduction of car-
of GaSe, by molecular beam epitaxy 115 (1991) 798 bon contamination in triethylphosphorus
Terasaki, T., see Tatsuyama 115 (1991) 112 OMVPE GaP layers by Pt/Al,O, cata-
Terashima, K. Shimura, T. Satoh, Y. Bando, lyst 115 (1991) 261
Y. Matsuda, A. Fujiyama, S. Komiyama, Watanabe, A., T. Isu, M. Hata and Y.
K. Kamigaki and H. Terauchi, Growth Katayama, Investigation of InP surface
mechanism and superconducting proper- under arsenic pressure using R,H EED-
ties of ultrathin YBa,Cu,0,_, films 115 (1991) 745 TRAXS 115 (1991) 371
Terauchi, H., see Terashima 115 (1991) 745 Watatani, H., see Nakao 115 (1991) 313
Tlaczata, M., see Helak 115 (1991) 294 Waucquez, C., see Frijlink 115 (1991) 203
Tomita, K., F. Kitagawa, H. Kano and M. Weyers, M. and M. Sato, Growth of GaP by
Hashimoto, Uniform growth of Te-doped MOVPE at very low pressure: kinetics
Al Ga, _,As (x = 0-0.65) on (111)B GaP and carbon incorporation 115 (1991) 469
substrates by liquid phase epitaxy 115 (1991) 299 Wu, Y. H., K. Ichino, Y. Kawakami, Sz. Fu-
Tsach, T., see Schieber 115 (1991) 31 jita and Sg. Fujita, Growth of II-VI
Tsubouchi, K., see Kaneko 115 (1991) 643 semiconductor quantum well structures
Tsuda, M., S. Oikawa and S. Furukawa, Epi- under in situ RHEED observations 115 (1991) 664
taxial growth mechanism at Sp, steps of
Si(001) surfaces by photo-induced Si(!D)
Xu Fei, see Peng 115 (1991) 698
atoms 115 (1991) 556
Tsuji, T., see Yoshimoto 115 (1991) 265
Yabumi, T., see Hattori 115 (19916)0 7
Yagi, K., see Shima 115 (19913)5 9
Yamada, A., see Lee 115 (19911)6 4
Yamada, S., see Ishiai 115 (19917)6 2
Uchida, K., see Matsumoto 115 (1991) 484 Yamada, T., see Sato 115 (19912)4 1
Ueba, H., see Tatsuyama 115 (1991) 112 Yamada, Y., see Hayashi 115 (19917)8 2
Ueda, O., K. Kitahara, N. Ohtsuka, A. Hobbs Yamaguchi, Y., see Nagasawa 115 (19916)1 2
and M. Ozeki, Transmission electron mi- Yamasaki, S., see Koide 115 (19916)3 9
croscopic study of AlAs/Si heterostruc- Yamashita, A., see Yoo 115 (19917)3 3
tures grown by atomic layer epitaxy 115 (1991) 113 Yamauchi, S., T. Hariu and S. Ono, Effect
Ueda, O., Y. Nakata, T. Nakamura and T. of enhanced reactivity in plasma-assisted
Fujii, TEM investigation of CuAu-I type epitaxial growth of ZnSe 115 (1991) 660
ordered structures in MBE-grown In- Yamauchi, Y., see Kobayashi 115 (1991) 353
GaAs crystals on (110) InP substrates 115 (1991) 375 Yamawaki, H., see Ueda 115 (1991) 774
Ueda, O., see Nakata 115 (1991) 504 Yamazaki, S., see Kondo 115 (1991) 231
Ueda, O., T. Kimura, H. Yamawaki and M. Yamazaki, S., see Mukai 115 (1991) 433
Ihara, Study of the microstructure of Yanagase, M., S. Tanaka, K. Hiramatsu and
CVD-grown Bi-Sr—Ca—Cu-O thin films I. Akasaki, Growth of InGaP epitaxial
on (001) MgO substrates by high-resolu- layers by liquid phase electro-epitaxy 115 (1991) 304
tion transmission electron microscopy 115 (1991) 774 Yang, S.-J., see Choi 115 (1991) 579
Ven, W.Y., S. Sakawa and T. Nishinaga, Yasuda, K., see Hattori 115 (1991) 607
Comparative study of amorphous and Yasuda, Y., see Ohshima 115 (1991) 106
crystalline buffer layers in MBE growth Yasuda, Y., see Koide 115 (1991) 365
of GaAs on Si 115 (19911)2 2 Yazawa, Y., T. Minemura and T. Unno,
UVesugi, F., see Ohshita 115 (19915)5 1 Photoluminescence of GaAs layers hy-
Umeno, M., see Itakura 115 (19911)5 4 brid-grown on Si by MBE and LPE 115 (1991) 519
Umeno, M., see Suzuki 115 (19911)5 8 Yoda, H., see Yoshioka 115 (1991) 705
Umeno, M., see Soga 115 (19914)1 8 Yokogawa, T. and T. Narusawa, ZnSe /ZnS
Umeno, M., see Egawa 115 (19915)2 4 strained layer superlattices grown on
Unno, T., see Yazawa 115 (19915)1 9 CaF, substrates by MOVPE 115 (1991) 670
Urano, T., K. Sakaue, K. Nagano, S. Hongo Yokoyama, H., M. Shinohara and N. Inoue,
and T. Kanaji, Adsorpion structure of K Atomic layer epitaxy of GaAs using N,
on Si(001) at various coverages 115 (1991) 411 carrier gas 115 (1991) 89
Usui, A., see Sasaoka 115 (1991) 94 Yonezu, H., see Maruyama 115 (1991) 180
Author index
Yoo, W.S., A. Yamashita, T. Kimoto and H. growth of P-based III-V semiconductors
Matsunami, Bulk crystal growth of 6H- and its photo-enhancement at low tem-
SiC on_ polytype-controlled substrates peratures 115 (1991) 265
through vapor phase and characteriza- Yoshino, J., see Otoma 115 (1991) 807
tion 115 (1991) 733 Yoshioka, Y., H. Yoda and M. Kasuga;
Yoshida, A., see Nishio 115 (1991) 284 Homo-epitaxial growth of CdTe by subli-
Yoshida, I., T. Katsuyama and H. Hayashi, mation under low pressure 115 (1991) 705
Improvement of photoluminescence Yoshizawa, S., see Ishiai 115 (1991) 762
characteristics of AlGaInP double het-
ero-structures grown by OMVPE 115 (1991) 533 Zaima, S., see Ohshima 115 (1991) 106
Yoshikawa, A. and T. Okamoto, Ar ion laser Zaima, S., see Koide 115 (1991) 365
irradiation effects on the MOVPE growth Zha, M., M. Piechotka and E. Kaldis, Vapour
of ZnSe using dimethyl zinc and hydro- growth of bulk anisotropic crystals; case
gen selenide as reactants 115 (1991) 274 study of o-Hgl, 115 (1991) 43
Yoshimoto, M., K. Ozasa, T. Tsuji, A. Kaji- Zhang, J., see Joyce 115 (1991) 338
moto and H. Matsunami, MOMBE Zsebok, O., see Protzmann 115 (1991) 248
