Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006 (AIP Conference Proceedings Accelerators, Beams, and Instrumentations)

645 Pages·2006·31.56 MB·English

by  Karen J. Kirkby

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ION
IMPLANTATION
TECHNOLOGY
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ION
IMPAPRTLICALNESTATION
AND
TECHNOLOGY
FIELDS
16th International Conference on Ion Implantation Technology
IIT 2006
Commemorative Volume of the Division of Particles and
Fields of the Mexican Physical Society
Marseille, France 11 – 16 June 2006
Morelia Michoacán, México 6 –12 November 2005
PART B
EDITORS
Karen J. Kirkby David Chivers
Russell Gwilliam Ion Links International, Ltd.,
Andy Smith West Lothi a n , S EcDotIlTaOndRS
Surrey Ion Beam Centre, ATI, Miguel A. Pérez
University of Surrey, England Cinvestav
Luis F. Urrutia
UNAM
Luis Villaseñor
SPONSORING ORGANIZATIONS
UMSNH
*Advanced Beam Technology - AIBT Nissin Ion Equipment Conseil General des Bouches-du-Rhone
Air Products & Chemicals, Inc. Plansee Metal GmbH Marseille Provence Metropole
Applied Materials - AMAT Praxair Electronics Pays D'aix Development
Atmel Rousset S.A.S. Semequip Inc. Provence Promotion
ATMI Inc. SEN Corporation University de Provence
Axcelis Technologies, Inc. SOITEC University Paul Cezanne/TECSEN
SPONSORING ORGANIZATIONS
Cascade Scientific ST Microelectronics Ville de Marseille
MaUthneisvoenr-sTritigya os/fL iMndice-hNoipapcoán nSa (nUsoMSNVHa)rian Semiconduction Equipment
Division of Particles and Fields of the Mexican Physical Society (DPyC-SMF)
Mexican Council on Science and Technology (CONACyT)
* Sponsors of the Conference Proceedings CD-ROM
MelvMilelelv, iNllee,w N eYwo rYko, r2k0, 200606
AIP ACIOPN CFOERNEFNECREE NPCREO CPEREODCINEGEDS IN G VSO LU M VEO 8L5U7ME 866
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Editors:
Karen Kirkby David Chivers
Russell Gwilliam Ion Links International, Ltd.
E-mail:
Andy Smith St. Mary's Place
Bathgate
Surrey Ion Beam Centre
West Lothian EH48 1DS
Advanced Technology Institute
Scotland
School of Electronics and Physical Sciences
Guildford, Surrey GU2 7XH
E-mail: [email protected]
England
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CONTENTS
Preface ....................................................................................xiii
Committees.................................................................................xv
Sponsors and Session Chairs.................................................................xvii
DOPING PROCESSES IN SEMICONDUCTORS
Germanium ... The Semiconductor of Tomorrow! .................................................3
A.R.Peaker,A.Satta,V.P.Markevich,E.Simoen,andB.Hamilton
The Role of Ion Beam Technology in the Development of Integrated Optical Monitors Suitable
forApplications in Silicon Photonics.............................................................9
A.P.Knights,J.D.B.Bradley,P.J.Foster,S.H.Gou,andP.E.Jessop
Influence of Energy Contamination at S(cid:213)D-Extension Dopant Implantation Using Ultra Fast
Annealing ..................................................................................13
M.Herden,D.Gehre,T.Feudel,andL.Herrmann
Formation of Ultrashallow Junctions Less than 10nm with the Combination of Low Energy B
Ion Implantation and LaserAnnealing..........................................................17
R.Yamada,S.Seto,S.Sato,Y.Tanaka,S.Matumoto,T.Suzuki,G.Fuse,T.Kudo,andS.Sakuragi
Impact of Fluorine Co-Implant on Boron Diffusion during Non-Melt LaserAnnealing.................21
T.Noda,S.Felch,V.Parihar,C.Vrancken,T.Janssens,H.Bender,B.VanDaele,andW.Vandervorst
Characterization of B H Plasma Doping for Converted p¿ Poly-Si Gate ............................25
2 6
J.-G.Oh,J.K.Lee,S.H.Hwang,H.J.Cho,Y.S.Sohn,D.S.Sheen,S.H.Pyi,S.W.Lee,S.H.Hahn,
Y.B.Jeon,Z.Fang,andV.Singh
Fluorine Profile Distortion uponAnnealing by the Presence of a CVD Grown Boron Box..............29
P.Lo´pez,L.Pelaz,R.Duffy,P.Meunier-Beillard,K.vanderTak,F.Roozeboom,andG.Maas
Deactivation of Low Energy Boron Implants into Preamorphised Si after Non-Melt Laser
Annealing with Multiple Scans ................................................................33
J.A.Sharp,N.E.B.Cowern,R.P.Webb,D.Giubertoni,S.Gennaro,M.Bersani,M.A.Foad,and
K.J.Kirkby
Co-Implantation for 45 nm PMOS and NMOS Source-Drain Extension Formation: Device
Characterisation Down to 30 nm Physical Gate Length ...........................................37
E.J.H.Collart,B.J.Pawlak,R.Duffy,E.Augendre,S.Severi,T.Janssens,P.Absil,W.Vandervorst,
S.Felch,R.Scheutelkamp,andN.E.B.Cowern
Control of Phosphorus Transient Enhanced Diffusion Using Co-Implantation ........................41
A.Vanderpool,A.Budrevich,andM.Taylor
Integration ofAdvanced Source and Drain Extension Process Using Carbon(cid:213)Fluorine
Co-Implants and SpikeAnneal in 65nm PMOS Devices...........................................46
C.I.Li,H.Y.Wang,C.C.Chien,M.Chain,C.L.Yang,S.F.Tzou,H.Graoui,M.A.Foad,andR.Ting
Controlling Dopant Diffusion andActivation through Surface Chemistry............................50
K.Dev,C.T.M.Kwok,R.Vaidyanathan,R.D.Braatz,andE.Seebauer
Strain-EnhancedActivation of Sb Ultrashallow Junctions .........................................54
N.S.Bennett,L.O’Reilly,A.J.Smith,R.M.Gwilliam,P.J.McNally,N.E.B.Cowern,andB.J.Sealy
Phosphorus Implant for S(cid:213)D Extension Formation: Diffusion andActivation Study after
Spacer and SpikeAnneal .....................................................................58
S.H.Yeong,B.Colombeau,F.Benistant,M.P.Srinivasan,C.P.A.Mulcahy,P.S.Lee,andL.Chan
The Concept of LDSI Locally-Differentiated-Scanning Ion Implantation for the Fine
(cid:132) (cid:133)
Threshold Voltage Control in Nano-Scale FETs ..................................................62
M.-Y.Lee,S.W.Jin,Y.S.Sohn,S.K.Na,K.B.Rouh,Y.S.Joung,Y.J.Ki,I.K.Han,Y.W.Song,
andS.W.Park
Time Dependence Study of Hydrogen-Induced Defects in Silicon during ThermalAnneals .............65
S.Personnic,A.Tauzin,K.K.Bourdelle,F.Leterte,N.Kernevez,F.Laugier,N.Cherkashin,A.Claverie,
andR.Fortunier
LayerTransfer of SOI Structures Using a Pre-Stressed Bonding Layer..............................69
L.VorradaandN.Cheung
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Optimal Preamorphization Conditions for the Formation of HighlyActivated Ultra Shallow
Junctions in Silicon-On-Insulator ..............................................................73
J.J.Hamilton,E.J.H.Collart,M.Bersani,D.Giubertoni,S.Gennaro,N.S.Bennett,N.E.B.Cowern,
andK.J.Kirkby
Ion Implantation:AWorld of Innovations.......................................................76
M.Bruel
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering
Implants....................................................................................84
A.J.Smith,N.E.B.Cowern,B.Colombeau,R.Gwilliam,B.J.Sealy,E.J.H.Collart,S.Gennaro,
D.Giubertoni,M.Bersani,andM.Barozzi
Effects of HydrogenAtoms on Redistribution of Implanted BoronAtoms in Silicon during
Annealing ..................................................................................88
K.Yokota,S.Nakase,andF.Miyashita
Investigation ofAmorphous Layer Formation UsingApplied QUANTUM X Single Wafer and
QUANTUM Batch Implanter..................................................................92
R.Doherty,B.McComb,R.Ting,andY.C.Cheng
High DopantActivation and Low Damage P¿ USJ Formation.....................................96
J.Borland,S.Shishiguchi,A.Mineji,W.Krull,D.Jacobson,M.Tanjyo,W.Lerch,S.Paul,J.Gelpey,
S.McCoy,J.Venturini,M.Current,V.Faifer,R.Hillard,M.Benjamin,T.Walker,A.Buczkowski,Z.Li,
andJ.Chen
AStudy of Carbon Effects in Implantation Process for Non-Silicide Contact Formation ..............101
T.H.Huh,S.Kim,G.J.Ra,R.N.Reece,S.I.Kondratenko,Y.S.Kim,K.I.Shin,andW.H.Jeon
Pre-Annealing Effects of n¿(cid:213)p and p¿(cid:213)n Junction Formed by Plasma Doping PLAD and
(cid:132) (cid:133)
LaserAnnealing............................................................................105
S.Heo,S.Baek,D.Lee,M.Hasan,andH.Hwang
SpikeAnnealing of ShallowArsenic and Phosphorous Implants in Different GaseousAmbient.........109
S.Paul,W.Lerch,andD.Bolze
The Effect of FlashAnnealing on the Electrical Properties of Indium(cid:213)Carbon Co-Implants in
Silicon.....................................................................................113
S.Gennaro,D.Giubertoni,M.Bersani,J.Foggiato,W.S.Yoo,R.Gwilliam,andM.Anderle
LocalArsenic Structure in Shallow Implants in Si Following SPER:An EXAFS and MEIS
Study .....................................................................................117
G.Pepponi,D.Giubertoni,S.Gennaro,M.Bersani,M.Anderle,R.Grisenti,M.Werner,andJ.A.Van
DenBerg
Well Design in a Bulk CMOS Technology with Low Mask Count..................................121
M.P.M.Jank,C.Kandziora,L.Frey,andH.Ryssel
Boron Redistribution during Crystallization of Phosphorous-DopedAmorphous Silicon...............125
R.Simola,D.Mangelinck,A.Portavoce,J.Bernardini,andP.Fornara
Ultra-Shallow Junctions Formed by Sub-Melt LaserAnnealing....................................129
S.B.Felch,A.Falepin,S.Severi,E.Augendre,T.Hoffman,T.Noda,V.Parihar,F.Nouri,
andR.Schreutelkamp
Defect Behavior in Bf Implants for S(cid:213)DApplications as a Function of Ion Beam
2
Characteristics .............................................................................133
N.Cagnat,C.Laviron,N.Auriac,J.Liu,S.Mehta,L.Frioulaud,andD.Mathiot
Impact of Dose Rate Effects and Damage Engineering On Device Performance......................137
K.Shim,Y.Hwang,Y.Lee,J.An,S.Ryu,S.Hahn,C.Cho,N.Hur,B.Guo,J.Liu,andY.Erokhin
Germanium Ion Implantation to Improve Crystallinity during Solid Phase Epitaxy and the
Effect ofAMU Contamination................................................................140
K.S.Lee,D.H.Yoo,G.H.Son,C.H.Lee,J.H.Noh,J.J.Han,Y.S.Yu,Y.W.Hyung,J.K.Yang,
D.G.Song,T.J.Lim,Y.K.Kim,S.C.Lee,H.D.Lee,andJ.T.Moon
CLUSTER IMPLANTATIONAND DOPING
20Years History of Fundamental Research on Gas Cluster Ion Beams, and Current Status of
theApplication to Industry...................................................................147
I.Yamada
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Dose Retention Effects inAtomic Boron and ClusterBoron™ B H Implant Processes .............155
(cid:132) 18 22(cid:133)
M.A.Harris,L.Rubin,D.Tieger,V.Venezia,T.J.Hsieh,J.Miranda,andD.Jacobson
Universal Ion Source™ for Cluster and Monomer Implantation...................................159
T.N.Horsky
Investigation of Converted p1 Poly-Si Gate Formed by B H ¿ Cluster Ion Implantation.............163
18 X
S.-H.Hwang,D.S.Kim,Y.H.Joo,J.G.Oh,J.K.Lee,T.W.Jung,H.J.Cho,Y.S.Sohn,D.S.Sheen,
S.H.Pyi,S.Kim,T.H.Huh,W.A.Krull,andH.T.Cho
ABeam Line System for a Commercial Borohydride Ion Implanter................................167
H.F.Glavish,T.N.Horsky,D.C.Jacobson,F.Sinclair,N.Hamamoto,N.Nagai,andM.Naito
Ultrashallow P¿(cid:213)n Junction Formed by B H ¿ Ion Implantation and Excimer Laser
18 22
Annealing .................................................................................171
S.Heo,D.Lee,H.T.Cho,W.A.Krull,andH.Hwang
Productivity Enhancements for Shallow Junctions and DRAMApplications Using Infusion
Doping....................................................................................174
J.Hautala,M.Gwinn,W.Skinner,andY.Shao
AVaporizer for Decaborane and Octadecaborane ...............................................178
D.Adams,T.N.Horsky,G.Gilchrist,R.Milgate,J.Sweeney,andP.Marganski
Simplifying the 45nm SDE Process with ClusterBoron® and ClusterCarbon™ Implantation...........182
W.Krull,B.Haslam,T.N.Horsky,K.Verheyden,andK.Funk
Implantation Characteristics by Boron Cluster Ion Implantation ..................................186
T.Nagayama,N.Hamamoto,S.Umisedo,M.Tanjyo,andT.Aoyama
Sputtering and Chemical Modification of Solid Surfaces by Water Cluster Ion Beams................190
G.H.Takaoka,K.Nakayama,D.Takeda,andM.Kawashita
Cross-Sectional TEM Observations of Si Wafers Irradiated with Gas Cluster Ion Beams .............194
H.Isogai,E.Toyoda,T.Senda,K.Izunome,K.Kashima,N.Toyoda,andI.Yamada
Boron Beam Performance and in-situ Cleaning of the ClusterIon™ Source .........................198
T.N.Horsky,G.F.R.Gilchrist,andR.W.MilgateIII
P-Type Gate Electrode Formation Using B H Ion Implantation .................................202
18 22
D.Henke,F.Jakubowski,J.Deichler,V.C.Venezia,M.S.Ameen,andM.A.Harris
ClusterBoron™ Implants on a High Current Implanter..........................................206
D.R.Tieger,W.DiVergilio,E.C.Eisner,M.Harris,T.J.Hsieh,J.Miranda,W.P.Reynolds,
andT.N.Horsky
Cluster Size Effects of Gas Cluster Ion Beams on Surface Modification.............................210
N.ToyodaandI.Yamada
High-Speed Nano-Processing with Cluster Ion Beams............................................214
T.SekiandJ.Matsuo
Characterization of Molecular Clusters in the Supersonic Gas Jet .................................218
T.Kagawa,F.Sato,Y.Kato,Y.Ito,andT.Iida
PIIIAND PLASMADOPING
PLAsma Doping for P¿ Junction Formation in 90 nm NOR Flash Memory Technology..............225
D.Bigarella,V.Soncini,D.Raj,V.Singh,andS.Walther
Deep Trench Doping by Plasma Immersion Ion Implantation in Silicon ............................229
S.Nizou,V.Vervisch,H.Etienne,M.Ziti,F.Torregrosa,L.Roux,M.Roy,andD.Alquier
Nitrogen Plasma Ion Implantation ofAl and TiAlloys in the High Voltage Glow Discharge
Mode .....................................................................................233
R.M.Oliveira,M.Ueda,J.O.Rossi,H.Reuther,C.M.Lepienski,andA.F.Beloto
Plasma Immersion Ion Implantation with a 4kV(cid:213)10kHz Compact High Voltage Pulser................237
M.Ueda,R.M.Oliveira,J.O.Rossi,H.Reuther,andG.Silva
Effects of Ion Energy on Nitrogen Plasma Immersion Ion Implantation in UHMWPE Polymer
through a Metal Grid .......................................................................241
M.Ueda,R.M.Oliveira,J.O.Rossi,C.M.Lepienski,andW.A.Vilela
Modified Phasor-Particle Model of Treating a Blocking Capacitor as a Phasor Element in
Simulation of Plasma Coupling with an ExternalAuto-Matching Network..........................245
D.T.K.KwokandP.K.Chu
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B H PLAD Doped PMOS Device Performance.................................................249
2 6
Z.Fang,T.Miller,E.Winder,H.Persing,E.Arevalo,A.Gupta,T.Parrill,V.Singh,S.Qin,
andA.McTeer
Plasma Immersion Ion ImplantationApplied to P¿N Junction Solar Cells..........................253
V.Vervisch,D.Barakel,F.Torregrosa,L.Ottaviani,andM.Pasquinelli
Ion Behaviour in Pulsed Plasma Regime by Means of Time-Resolved Energy Mass
Spectroscopy TREMS Applied to an Industrial Radiofrequency Plasma Immersion Ion
(cid:132) (cid:133)
Implanter: PULSION® ......................................................................257
M.Carrere,F.Torregrosa,andV.Kaeppelin
Boron Ion Implantation into Silicon by Use of the Boron Vacuum-Arc Plasma Generator.............261
J.M.Williams,C.C.Klepper,D.J.Chivers,R.C.Hazelton,J.J.Moschella,andM.D.Keitz
MATERIALS—NOVELTECHNIQUESANDAPPLICATIONS
Micro-Patterned Porous Silicon Using Proton Beam Writing......................................269
M.B.H.Breese,D.Mangaiyarkarasi,E.J.Teo,A.A.Bettiol,andD.Blackwood
Grazing IncidenceAngle X-Ray Diffraction of Implanted Stainless Steel: Comparison between
Simulated Data and Experimental Data........................................................275
J.Dudognon,M.Vayer,A.Pineau,andR.Erre
Investigation of the Impact on Device Parameters of Fluorine Enhanced Oxide in a Power
Trench MOSFET...........................................................................279
J.H.RiceandC.-T.Wu
Rare Gas Ion Implanted-Silicon Template for the Growth of Relaxed Si Ge (cid:213)Si 100 ...............283
1-x x (cid:132) (cid:133)
G.Regula,M.Raissi,J.-L.Lazzari,F.Chevrier,N.Burle,andE.Ntsoenzok
High Temperature Implantation ofAluminum in 4H Silicon Carbide...............................287
M.Rambach,A.J.Bauer,andH.Ryssel
Annealing of TiO Films Deposited on Si by Irradiating Nitrogen Ion Beams........................291
2
K.Yokota,Y.Yano,andF.Miyashita
Thermal Diffusion Barrier forAgAtoms Implanted in Silicon Dioxide Layer on Silicon
Substrate and Monolayer Formation of Nanoparticles ...........................................295
H.Tsuji,N.Arai,N.Gotoh,T.Minotani,T.Ishibashi,T.Okumine,K.Adachi,H.Kotaki,Y.Gotoh,
andJ.Ishikawa
Water Splitting and Hydrogen Emitting Catalytic Function of Hydrogen-Implanted Oxide
Ceramics Studied Using Ion Beam Technology..................................................300
K.Morita,B.Tsuchiya,S.Nagata,K.Katahira,M.Yoshino,J.Yuhara,Y.Arita,T.Ishijima,andH.Sugai
Structural Changes in Polymer Films by Fast Ion Implantation ...................................304
M.A.Parada,R.A.Minamisawa,C.Muntele,I.Muntele,A.DeAlmeida,andD.Ila
Hydrogen Ion Implantation Mechanism in GaAs-on-InsulatorWafer Formation by Ion-Cut
Process....................................................................................308
H.J.Woo,H.W.Choi,G.D.Kim,J.K.Kim,W.Hong,andH.R.Lee
High Dose Hydrogen Implant Blistering Effects as a Function of Selected Implanter and
Substrate Conditions........................................................................313
R.Eddy,C.Hudak,P.Bettincurt,andS.Delgado
Germanium Nanoparticle Formation into Thin SiO Films by Negative Ion Implantation and
2
Their Electric Characteristics ................................................................317
N.Arai,H.Tsuji,N.Gotoh,T.Okumine,T.Yanagitani,M.Harada,T.Satoh,H.Ohnishi,T.Minotani,
K.Adachi,H.Kotaki,T.Ishibashi,Y.Gotoh,andJ.Ishikawa
SizeAnalysis of Ethanol Cluster Ions and Their Sputtering Effects on Solid Surfaces.................321
G.H.Takaoka,K.Nakayama,T.Okada,andM.Kawashita
Tuning of Etching Rate by Implantation: Silicon, Polysilicon and Oxide............................325
R.CharavelandJ.-P.Raskin
The Influence of Ion Implantation on CellAttachment to Glass Polymeric Carbon...................329
R.Zimmerman,I.Gurhan,F.Ozdal-Kurt,B.H.Sen,M.Rodrigues,andD.Ila
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IMPLANTTECHNOLOGY
Chicane Deceleration—An Innovative Energy Contamination Control Technique in Low
Energy Ion Implantation.....................................................................335
N.White,J.Chen,C.Mulcahy,S.Biswas,andR.Gwilliam
Characterisation of the Beam Plasma in High Current, Low Energy Ion Beams for Implanters........340
J.Fiala,D.G.Armour,J.A.vandenBerg,A.J.T.Holmes,R.D.Goldberg,andE.H.J.Collart
Next Generation Medium Current Product: VIISta 900XP .......................................345
A.Renau
ImplantAngle Control on Optima MD ........................................................349
R.D.Rathmell,B.Vanderberg,A.M.Ray,D.E.Kamenitsa,M.Harris,andK.Wu
Process Transferability from a Spot Beam to a Ribbon Beam Implanter: CMOS Device
Matching..................................................................................353
V.Kaeppelin,Z.Chalupa,L.Frioulaud,S.Mehta,B.Guo,K.-H.Shim,H.Lendzian,andY.Erokhin
Application of Stencil Mask Ion Implantation Technology to Power Semiconductors .................357
T.Nishiwaki,H.Saito,K.Hamada,K.Tonari,andT.Nishihashi
Ion Implanter Cross Contamination and Maintenance Safety Considerations with High Dose
Phosphorus................................................................................361
R.Eddy,B.Ostrowski,M.H.Yang,andD.Huntington
Source Life Improvement for Germanium Implant..............................................365
A.Allen,P.Banks,S.Biswas,andC.Mulcahy
Ion Sources for High and Low Energy Extremes of Ion Implantation ..............................369
A.Hershcovitch,V.A.Batalin,A.S.Bugaev,V.I.Gushenets,B.M.Johnson,A.A.Kolomiets,
G.N.Kropachev,R.P.Kuibeda,T.V.Kulevoy,I.V.Litovko,E.S.Masunov,E.M.Oks,V.I.Pershin,
S.V.Petrenko,S.M.Polozov,H.J.Poole,I.Rudskoy,D.N.Seleznev,P.A.Storozhenko,
A.Ya.Svarovski,andG.Yu.Yushkov
An Electron Cyclotron Resonance Ion Source with Cylindrically Comb-Shaped Magnetic Field
Configuration ..............................................................................373
Y.Kato,H.Sasaki,T.Asaji,T.Kubo,F.Sato,andT.Iida
Advantages of Dual Magnet Ribbon BeamArchitecture for Particle Control in Single Wafer
High Current Implant.......................................................................377
C.Campbell,G.Redinbo,J.Blake,P.Kellerman,E.Moore,andN.Variam
OptimizedAutotuning for Single Wafer High-Current and Medium-Current Implanters..............381
J.T.Scheuer,A.Cucchetti,M.Welsch,W.Callahan,K.Luey,andJ.C.Olson
Backing Up Medium Current Implanters Using Single Wafer High Energy Implanter for
Manufacturing Efficiency....................................................................385
H.L.Sun,W.Lee,K.Xu,H.Y.Tsun,K.T.Peng,L.S.Juang,andH.P.Tseng
Rising Microwave Frequency of a Broad-Ion-Beam ECR Source with Cylindrically
Comb-Shaped Magnetic Field Configuration....................................................389
T.Asaji,Y.Kato,H.Sasaki,T.Kubo,F.Sato,T.Iida,andJ.Saito
Profile andAngle Measurement System of SHX.................................................393
Y.Kikuchi,M.Kabasawa,M.Tsukihara,andM.Sugitani
ImplantAngle Deviation Reduction in Batch-Type High Energy Implanter .........................397
N.Suetsugu,T.Yamada,M.Tsukihara,andM.Sugitani
Stencil Mask Ion Implantation Technology for RealisticApproach to Wafer Process..................401
K.Tonari,T.Nishihashi,M.Ishikawa,andJ.Fujiyama
Enhanced Dosimetry for Single Wafer High-Current Implanters ..................................405
J.T.Scheuer,J.Dzengelaski,D.Distaso,D.Timberlake,J.Cummings,andJ.C.Olson
Using Multiple Implant Regions to Reduce Development Wafer Usage .............................409
S.R.Walther,S.Falk,S.Mehta,Y.Erokhin,andP.Nunan
Advanced Modeling Techniques forAnalysis of High Current Ribbon Beam Transport
and Control................................................................................413
P.KellermanandF.Sinclair
Increase of Beam Current Mass-Separated by Long Gap Dipole Sector Magnet for S(cid:213)D
Process in FPD Manufacturing ...............................................................417
S.Dohi,Y.Ando,Y.Inouchi,Y.Matsuda,M.Konishi,J.Tatemachi,M.Nukayama,K.Nakao,K.Orihira,
andM.Naito
ix
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