Insulated Gate Bipolar Transistor IGBT Theory and Design (Ieee Press Series on Microelectronic Systems)

642 Pages·2003·33.97 MB·English

by  Vinod Kumar Khanna

IGBT

Theory and Design

Vinod Kumar Khanna
‘THe INSULATED GATE BIPOTAR TRANSISTOR

IGBT

THEORY AND DESIGN:
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IGBT

THEORY AND DESIGN

‘Vinod Kumar Khanna

IEEE

IEEE PRESS

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CONTENTS

Pretace w

1 Power Device Evolution end the Advent of ISBT 1

LA Tomaduetory Backsnand 1

12 Trewin Gate Bipolar Transistor / 5

13. Advunuges and Sharecnmings af EBT. ¥

1A KGB Serzeute and Fabvieation 712

15 Raguialent Cireoi Represenstons / 14

Lh Principe af Qaeration and Chatge-Contal
Phenament 16

LF Girie Modeting / 17

18 Packaging Opcions fur (GBT / 2

19 Handi Procinions of IGHLs 25

110 IGRT Gate Driving Cicuits / 23

LIL AGHT Proteetioa / 2¢

L12 Sumesiry ama Lremus 28

Review Exeaves / 28

References / 29

2 IGRT Fundementals and Statue Review 5
22° Device Opecitional Modes /
23° Static Clnaulestis of IGE / 50
ZA Solseting Leister ot GBE / 5
25 Safe Operuing Ana SOAP / 72
2 Uigle temperature Opernion 7 83
23° Readininn Ffoos 7 88
8 oonrenrs

28 Trench Gate JGBT ond Injection Lhenced CET
EET 7 x6

2. SeltCluped IGT / 89

210 Ratings and Applications of IGT / Ob

2.21 Sumy and Treads 7 94

Review Faesces / 95

Refsienoes / 97

‘9. MOS Components of {GET
34 Gencrsh Cursideralous / 101
32 MOS Stew Auahsis sal Uheeshol Yelle / 207

13 Current- Vakage Charsctviais of MOSFET:
Transanndactance ad Drain Resistance 119

SA ON-Resitaace Model of IMOSFRT and
URMOSRET / 123

RS MOSFET Rquitslent Cit and Swiching Times 2-189

34 Safe Opsrating Atca (SOAP / 134

A} Nextioa saa Canney Damage Ribs #1

8A Thornal Bohasiey of MOSFET / 13

39. DMOSPET Coll Windnas and'Tonoogicel Designs / 13H

310. Summary und rend 7 1238

Review Laercives / 139

Kolereuses / 140

Appeadis 21: Derivation of Las (82a) and 3200/42

‘Appendix 3.2: Derivation of ey.) / 142

‘Appendix 3: esa o. tbe Livan oe Mlk
Semcunducioe Potent! } and Uke Surlace

(Change (a he Por 9 Leimsies ants See
Inversion a

Appendix 34; Dovialinn of Pap. G38 36) £147
Apponcin 3% Dorian of Fey GRIM) / 150
Sypendix 3a Tasrivation of Fa (2at8) 182

4 Bipolar Campanens of 1GAT
Li PN Tunction Dade 7 15
42° PAN Rostifes / 172
3 ipolar uncon eansitse / 180

101

185
44 Tyytigon / 189

4 Jonetion Fold-Feet Transistor EET) / 18%

46 Sammariing Remarss 198

Review Frorticcs 198

Refecences 20

‘Appeniis 4) Drill axl Ditiign Curren Densities 201

‘Appendis 4.2. Lintein’s Eason / 208

Apptadis 43 Cuninty Faation and Tes Solrinn f 206

Appendix 44. Sohucan of the Coatinuley Pguation‘.t!)
Pa

Appendix 45 Deriatoa of Ba GAD / 212

Appendix 44° Clerhatinn of Cumem Densiy Equations 4.83
and (458) 2 205

Append 7 Treaster ‘Ceaninal Cartons [qe 13) and
eam) 7 220

Appendix 4 Commonare Chvent Gain a
Tey ea) / 225

Physiee and Modeling of (GET 229
51 PIN Revtiier-DMOSILT Medel of IGT / 231
52. Bipolar Fraueiwor-DMOSERY Mode! of IOBL

sy stereo of PIN Rectifior-DMOSIEI

Mocel 241
53 Bipolur Transiter-DMOSFLET Made! of KLE sith

Device Chreuit menace /
54 Consluting Commeuts 280
Review Bawvives 7 261
Referees / 28
“Appendix 51 Soustion of Eq. (58) / 265
Appondi 52 Dereon af yp. (833) and (8.249 28
‘Appeniln 5.4 Derivaion of By. (5359 7 288
‘Appemlix $4 Denna jou of By. 6.38) Sclution uf

Eq. 538) 7 288

Annendic $$ Thtivcion at Ras. (.AN.42) /
‘Annend 5 erivasion af Hq (384) 293

Appendix 3 Deration of Eys. 1589) acl Construcsion of
Faquiatent Conductive Network (or ID Linear
Flement / 297

a
5 Latchup of Parasite Thyrlstor In BT
61 lavoductun 7 305
62. Stalic Luching 7 306
63 Dynan Latching #38
64 Latching Prevestinn Meanures 7 317
65° Katchog Corcent Deusity of Trench-Cate IGE 7 3a
66 Summiting Remarks / M42
Review Exencies / 342
Reterenoes 3d
Appenic 61. Payton (619) 7 5
Appendix 2 Equation (620) / M7

7 Resign Considerations of IGBT Unit Cell

A Seniecadugta Seletion and Vertieal Structure

Design 249

TGRT Tesign by Ansvtoal Calutetinns and Nurverial
Siontaione 3
Opriniration of N-Fhfer Layer Strmerare 381
Fist Ring and Fick. Place Terminntion Design / 545,
Surface TorTiplantet Figs Termination 394
Redhoud Surface Flcctrc Field (RESURF) Conospe
fs Broakasnen Voltage Fahancersemt in tor
lent 735
32 Coneloding Comments / 398
[Review Literises / 399
Relerences / AU
‘Appenuix 71 Mubipicaon Cueffiieul ae / 402
Apperdic 22 Fy Equation 400
[ApRens 7.3. Avalunehe Ureakdown Vella (V,) 7 404
‘Appenlix 74 Puachthrough Voltage 7.) 7 08
Apgotlie ES Bley. /BVpp Raton 7106

8 IGBT Procees Design and Fabrication Technatogy
KL Prose Soquerae Retinition / 412
2 Unir Pogess Steps. / 28
8A Plowos Tukey ane Stmularion / 143

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