IEEE MTT-V044-I01 (1996-01)

172 Pages·1996·92.304 MB·English

by  FANTOMASPING

~IEEE
TRAN SACTI 0 NS ON
MICROWAVE THEORY
AND TECHNIQUES
A PUBLICATION OF THE IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY
JANUARY 1996 VOLUME 44 NUMBER 1 IETMAB (ISSN 0018-9480)
Editorial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ............................................. R. J. Trew
PAPERS
Complete Sliced Model of Microwave FET' s and Comparison with Lumped Model and Experimental Results ........ .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Abdipour and A. Pacaud 4
A New Reciprocity Theorem ................................................................................. J. C. Monzon 10
A Joint Vector and Scalar Potential Formulation for Driven High Frequency Problems Using Hybrid Edge and Nodal
Finite Elements ........................................................................... R. Dyczij-Edlinger and 0. Biro 15
Statistical Computer-Aided Design for Microwave Circuits ...................................... J. Carroll and K. Chang 24
Propagation Characteristics of Superconducting Microstrip Lines .................. S.-G. Mao, J.-Y. Ke, and C. H. Chen 33
Minimization of Reflection Error Caused by Absorbing Boundary Condition in the FDTD Simulation of Planar
Transmission Lines ......................................................................... K. Naishadham and X. P. Lin 41
FET Statistical Modeling Using Parameter Orthogonalization ..... J. Carroll, K. Whelan, S. Prichett, and D. R. Bridges 47
Coaxial Cavities with Corrugated Inner Conductor for Gyrotrons .............. C. T. Iatrou, S. Kern, and A. B. Pavelyev 56
Coupling Phenomena in Concentric Multi-Applicator Phased Array Hyperthermia Systems ............................. .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . ·. ............................................... K. S. Nikita and N. K. Uzunoglu 65
Analytically and Accurately Determined Quasi-Static Parameters of Coupled Microstrip Lines .................. C. Wan 75
A Compact Model for Predicting the Isolation of Ports in a Closed Rectangular Microchip Package ...... H. M. Olson 81
Recursive Mode Matching Method for Multiple Waveguide Junction Modeling ............ 0. P. Franza and W. C. Chew 87
Dual-Tone Calibration of Six-Port Junctio · and Its Application to the Six-Port Direct Digital Millimetric Receiver ....
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. Li, R. G. Bosisio, and K. Wu 93
Microwave Inductors and Capacitors in Standard Multilevel Interconnect Silicon Technology .......................... .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. N. Burghartz, M. Soyuer, and K. A. Jenkins 100
Automated E-Field Scanning System for Dosimetric Assessments .................. T. Schmid, 0. Egger, and N. Kuster 105
Small-Signal Characterization of Microwave and Millimeter-Wave HEMT's Based on a Physical Model ............. ..
. . . . . . . . . : .................... ................................................. R. Singh and C. M. Snowden 114
(Continued on back cover)
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 44, NO. I, JANUARY 1996
Editorial
I T'S AMAZING how fast time flies! It's been almost a During the past year, I have been monitoring the submis
year now that I've been Editor of the IEEE TRANSACTIONS sions to determine the most effective way to make use of
ON MICROWAVE THEORY AND TECHNIQUES. First, I want the Associate Editors. In reviewing the topic area of new
to sincerely thank the previous editor, Dan Masse, for his submissions I have observed that more than half of all sub
outstanding work on the journal. He left the journal in excellent missions are in the electromagnetics/guided wave/numerical
shape and running smoothly. The quality and amount of work simulations areas. Therefore, a new Associate Editor for Elec
he performed is truly amazing. The journal has been receiving tromagnetics/Guided Waves is being appointed to help manage
about two new manuscripts per day and since each manuscript these manuscripts. I am pleased to announce that Prof. Eikichi
goes to three reviewers, the volume of work quickly multiplies. Yamashita of the University of Electro-Communications in
Second, I want to thank the members of ADCOM for their Tokyo, Japan, who is a well-known authority in this area, has
confidence in me. I am pledged to maintain the high standards accepted the position. Authors may submit their manuscripts
of the IEEE TRANSACTIONS ON MICROWAVE THEORY AND directly to Prof. Yamashita.
TECHNIQUES and will work diligently to keep it the premier A new Associate Editor is also being appointed to manage
journal for presentation of work in the microwave area. Last, applications papers. I am pleased to announce that Fazal Ali
but certainly not least, I want to thank members of the from Westinghouse, Electronic Systems Group, Baltimore,
Editorial Board for their efforts and cooperation. Reviewing is MD, has accepted the position of Associate Editor for Ap
a time-consuming and sometimes unpleasant task. However, plications, Tutorial, and Review. Fazal's duties will involve
the quality of the TRANSACTIONS is critically dependent upon identifying applications-oriented papers that address subjects
the peer-review process, and it is only through the selfless of timeliness and importance. He will solicit Invited Papers,
efforts of Editorial Board members that the high standards as well as accept contributed papers. If you have an idea for
of the TRANSACTIONS can be maintained. Editorial Board a good paper in this area, please contact Mr. Ali and discuss
members who actively reviewed during the previous year are it with him.
listed on the back cover. Please take the time to thank them A third Associate Editor is being appointed to handle
when you have the opportunity. Special Issues and Invited Papers. I am pleased to announce
The main task at hand is to increase the effectiveness of the that Prof. Linda Katehi of the University of Michigan in
TRANSACTIONS and to make it as useful as possible to the MTT Ann Arbor has accepted this position. We currently publish
Society membership. The survey completed last year by the four Special Issues per year. The December issue is always
Publicity and Public Relations Committee of ADCOM under dedicated to the annual IMS, but many of the other Special
the Chairmanship of Glenn Thoren indicated that the MTT Issues are published in response to proposals received from the
publications are the most important feature of membership membership. Dr. Katehi will plan and manage this activity.
in the society. However, almost 22% of the respondents She will both solicit and accept ideas for Special Issues on
expressed a need for some improvement. In particular, there timely subjects. She will also plan Invited Papers on important
is strong sentiment that the TRANSACTIONS should publish topics. If you have ideas for Special Issues, or topics of general
more applications-oriented papers. This is the guidance given interest that would be suitable for an Invited Paper please
me by ADCOM, and this is a concept I support. The goal discuss them with Dr. Katehi.
is to increase the number of applications-oriented papers, The new Associate Editors all have wide experience in
while maintaining the high quality and archival nature of the the microwave area. All have been active contributors to the
TRANSACTIONS. society in a variety of ways for an extended period. I am
The IEEE TRANSACTIONS ON MICROWAVE THEORY AND very pleased that they have agreed to join me on the IEEE
TECHNIQUES is truly an international journal. We receive man TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
uscript submissions from virtually every country on the planet, Editorial Staff. We are all pledged to make the TRANSACTIONS
and the volume of international contributions is increasing. as useful to the society membership and profession as possible.
Our reviewers and membership are located worldwide. As the Please join with me in welcoming the new Associate Editors
TRANSACTIONS has grown in stature the volume of work has to their tasks.
significantly increased. In recognition of this, ADCOM has ROBERT J. TREW
approved the appointment of several new Associate Editors. Editor
0018-9480/96$05.00 © 1996 IEEE
2 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 44, NO. I, JANUARY 1996
Eikichi Yamashita (M'66-SM'79-F'84) was born in Tokyo, Japan, on February 4, 1933. He
received the B.S. degree from the University of Electro-Communications, Tokyo, Japan, and
the M.S. and Ph.D. degrees from the University of Illinois, Urbana, IL, USA, all in electrical
engineering, in 1956, 1963, and 1966, respectively.
From 1956 to 1964, he was a Member of the Research Staff on millimeter-wave engineering
at the Electrotechnical Laboratory, Tokyo, Japan. While on leave from 1961 to 1963 and from
1964 to 1966, he studied solid-state devices in the millimeter-wave region at the Electro-Physics
Laboratory, University of Illinois. He became Associate Professor in 1967 and Professor in 1977
in the Department of Electronic Engineering, Dean of Graduate School from 1992 to 1994 of
the University Electro-Communications, Tokyo, Japan. His research work since 1956 has been
principally on applications of electro-magnetic waves such as various microstrip transmission
lines, wave propagation in gaseous plasma, pyroelectric-effect detectors in the submillimeter
wave region, tunnel-diode oscillators, wide-band laser modulators, various types of optical fibers,
ultra-short electrical pulse propagation on transmission lines, and millimeter wave imaging. He edited the book Analysis Methods
for Electromagnetic Wave Problems (vol. l and vol. 2), (Norwood, MA: Artech House).
Dr. Yamashita was Chairperson of the Technical Group on Microwaves, IEICE, Japan, for the period 1985 to 1986, and
Vice-Chairperson, Steering Committee, Electronics Group, IEICE, for the period 1989 to 1990. He is a Fellow of IEEE, and
served as Associate Editor of the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES during the period 1980
to 1984. He was elected Chairperson of the MTT-S Tokyo Chapter for the period 1985 to 1986. He has been a member
of the MTT-S ADCOM since January 1992, and Chairperson of Chapter Operations Committee, IEEE Tokyo Section, since
1995. He served as Chairperson of International Steering Committee, 1990 and 1994 Asia-Pacific Microwave Conference,
held in Tokyo and sponsored by the IEICE.
Fazal Ali (SM'90), a disciple of the late Prof. Fred Rosenbaum, received the B.S. in physics
and applied mathematics, the B.S.E.E. and M.S.E.E. degrees from Washington University in St.
Louis, MO. He is currently engaged in Ph.D. research work.
He has been involved in the design and development of GaAs MMIC's for the last 13 years. He
joined the Advanced Technology Division of Westinghouse in 1992. In his present position as an
Advisory Engineer, he has been involved in the design and development of HBT power MMIC's
and MESFET based circuits and providing technical leadership in the commercial applications
of MMIC's. Before joining Westinghouse, he worked at Pacific Monolithics for seven years
as Manager of MMIC Product Development and Senior Member of the Technical Staff. His
MMIC design and product background using MESFET, PHEMT, and HBT technologies include
gain blocks, power amplifiers, LNA's, phase shifters, switches, attenuators, passive components,
mixers, frequency converters (up/down, image-reject, I-Q), oscillators, multifunction MMIC
transceivers, and MMIC-based subsystems. He has also served as Program Manager and Principal
Investigator on several customer funded R&D projects. Prior to Pacific Monolithics, he worked at Avantek on the design of
MMIC distributed amplifiers. He introduced and taught the first graduate course in GaAs MMIC design as an Adjunct Professor
at U.C. Berkeley and Santa Clara University from 1986 to 1991. He has authored/co-authored over 50 technical publications,
five invited presentations and edited, co-edited, and co-authored three books on GaAs IC technology: HEMTs and HBTs:
Devices, Fabrication and Circuits (Norwood, MA: Artech House, 1991); Advanced GaAs MMIC Technology (London: MEPL,
1989); and Microwave and Millimeter-Wave Heterostructure Transistors and Their Applications (Norwood, MA: Artech House,
1989). He holds five US patents and 15 additional disclosures in MMIC design techniques.
Mr. Ali received the 1993 Westinghouse Corporate Award of Excellence (Highest Award) for contributions to HBT Power
MMIC's, the 1994 Award of Excellence for contributions to control circuits, and several special performance awards. He is
a member of Eta Kappa Nu, Tau Beta Pi, Omnicron Delta Kappa (leadership Honor Society), and a Senior Member of the
IEEE. He serves on the editorial review board of the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES and
IEEE MICROWAVE AND GUIDED WAVE LETIERS. He is very active in the Microwave Society and serves on the Technical
Program Committee of the IEEE International Microwave Symposium and GaAs IC Symposium. He is presently the Chairman
of MTT-6 Technical Committee on Microwave and Millimeter-Wave Integrated Circuits of the MTT-S ADCOM.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 44, NO. I, JANUARY 1996
Linda P. B. Katehi (S'81-M'84 SM'89-F'95) received the B.S.E.E. degree from the National
Technical University of Athens, Greece, in 1977, and the M.S.E.E. and Ph.D. degrees from the
University of California, Los Angeles, in 1981 and 1984, respectively.
In 1984 she joined the faculty of the EECS Department of the University of Michigan,
Ann Arbor. Since then she has been interested in the development and characterization
(theoretical and experimental) of microwave, millimeter printed circuits, the computer-aided
design of VLSI interconnects, the development and characterization of micromachined circuits
for millimeter-wave and submillimeter-wave applications and the development of low-loss lines
for Terahertz-frequency applications. She has also been studying theoretically and experimentally
various types of uniplanar radiating structures for hybrid-monolithic and monolithic oscillator
and mixer designs. She is the author and/or co-author of more than 220 papers published in
referred journals and symposia proceedings.
Dr. Katehi was awarded with the IEEE AP-S W. P. King (Best Paper Award for a Young
Engineer) in 1984; the IEEE AP-S S. A. Schelkunoff Award (Best Paper Award) in 1985; the NSF Presidential Young
Investigator Award and an URSI Young Scientist Fellowship in 1987; and the Humboldt Research Award and The University
of Michigan Faculty Recognition Award in 1994. She is a Fellow of IEEE, and a member of IEEE AP-S, MTT-S, Sigma XI,
Hybrid Microelectronics, URSI Commission D and a member of AP-S ADCOM from 1992 to 1995. Also, she is an Associate
Editor for the IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION. She has graduated 11 Ph.D. students and is presently
supervising 15 Ph.D. graduate students.
4 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 44, NO. I, JANUARY 1996
Complete Sliced Model of Microwave
FET' s and Comparison with Lumped
Model and Experimental Results
Abdolali Abdipour, Student Member, IEEE, and Andre Pacaud
Abstract- This paper describes a rigorous and systematic
procedure to derive a unified and complete semidistributed FET
model that can be easily implemented in CAD routines of simula
tors. We have used the three coupled-line theory, including active
and passive electromagnetic coupling between the semiconductor
electrodes. The analytical formulas are given in order to calculate
the capacitances of the electrodes and sufficient agreement is
obtained in comparison with numerical analysis. For the first
time, the experimental data of the device are compared with full
three coupled-line theory and three coupled-line sliced model.
This full semidistributed approach to FET modeling is applied to
the analysis of a submicrometer-gate GaAs FET at centimeter and
millimeter-wave frequencies, and the results are compared with
the lumped element approach. The maximum available power active layer
gain (MAG) and the maximum stable power gain (MSG) of the semi-insulating subsrate
device is calculated as a function of device width and frequency.
Fig. I. Schematic showing the physical structure of MESFET with its
Both the losses caused by the channel and those caused by the important dimensions.
finite electrode conductivity are included. Good agreement is
obtained between theory and experiment.
circuit as shown in Fig. 3. The method of determining the
I. INTRODUCTION values of the capacitance and inductance matrices is improved
STATE-OF-THE-ART low-noise FET's (MESFET's and with sufficient accuracy. This modification is important be
HEMT's) show transit frequencies of more than 100 cause the wave propagation parameter (propagation constants,
GHz at submicron gate-length. FET modeling, on the other characteristic impedances, or admittances) depends on these
hand, does not keep pace with this rapid development due to elements. The lines are then modeled within the active parts
problems in device measurement techniques and lack of basic of the transistor [ 13]. For purposes of simulation time reduc
theoretical work at the frequency range above 20 GHz. tion and thermal analysis of noise properties [22], [25], the
For very-high frequency applications [21 ], [24], [27] the complete sliced model with three coupled-lines consideration
dimension of the transistor, in particular the electrode width, [l, 2] (instead of two coupled-lines analysis [10], [12], [18],
becomes comparable to the wavelength, >.. . In such cases, [ 19], [20]) is proposed.
9
wave propagation effects influence the electrical performance
of the device.
Heinrich and Hartnagel [4], [26] reported on their study II. THE MODEL AND ITS ELEMENTS
of the problem using the full-wave analysis technique and
concluded that the distributed nature of electrodes becomes A. Passive Electromagnetic Coupling
significant when the frequency is above 20 GHz. In this
A schematic representation of a distributed MESFET is
paper, a similar study is presented using coupled-mode theory
shown in Fig. 1. The device consists of three coupled elec
[28] and a new semidistributed equivalent circuit based on
trodes fabricated on a thin layer of GaAs, supported by a
distributed theory and experimental results, which can be inte
semi-insulating GaAs substrate. The analysis of passive elec
grated into a circuit simulator, is proposed. The electrodes are
tromagnetic coupling are studied by two procedures, numerical
considered to be lossy transmission lines where their elements
and analytical analysis.
were calculated using numerical and analytical analysis. For
Numerical Analysis: In numerical analysis the device elec
the first time, each slice is represented by a 6-port equivalent
trodes are considered as a multicoupled microstrip transmis
Manuscript received April 12, 1994; revised October 2, 1995. sion line problem. For evaluating the self and inter-electrode
The authors are with Laboratoire de Micro-ondes, Service Radioelectricite capacitance of the system, Silvester's method was applied. In
et Electronique, Ecole Superieure d'Electricite (SUPELEC), Plateau de
this method the whole problem of capacitance determination
Moulon-91192, GIF-SUR-YVETTE, Cedex, France.
Publisher Item Identifier S 0018-9480(96)00484-X. is divided into four steps [7], [14], [31]:
0018-9480/96$05.00 © 1996 IEEE
ABDIPOUR AND PACAUD: COMPLETE SLICED MODEL OF MICROWAVE FET'S
1) Finding the required Green's function.
2) Finding the Fredholm integral equation.
3) Applying the method of moments using Dirac delta
functions as weighting functions (matrix approximation
to integral equation).
4) Finding the matrix of Maxwell's potential coefficients
and matrix of capacitances.
By repeating the calculation with the substrate dielectric equal
to the free-space value, the inductance matrix may be obtained Source
within the TEM approximation Ls
[L] = coµo[Co]-1
with [Co] being the matrix of capacitances for the case where Fig. 2. Small-signal equivalent circuit of a FET.
er = 1. We compared our results with the literature [8], [9],
(28], and good agreement was obtained. In the case of FET electrodes we have
Analytical Analysis: In our analytical approach the passive
ls = Im(zmcoth(rt))
electromagnetic coupling elements are obtained from geometry
wl
and material constants of the FET and we assume that the 5
=
gate-source and gate-drain spacing are equal. The Quasi TEM ld Im(zmcoth(rt))
mode wave propagation of energy can be decomposed into an wld
even and odd-mode excitation [12], (30], (31]. The even-mode lg= Im(zmcoth('Yhg))
wave transmission is analogous to excitation of a conductor wlgg
backed coplanar waveguide (CBCPW) and the odd-mode wave hg = min{lg, lg} (3)
transmission is analogous to excitation of a pair of conductor
backed coplanar strips (CBCPS). With this description we can with ls = source length, ld = drain length, lg = gate length,
evaluate the capacitance matrix and then the inductance matrix t = source, and drain conductor thickness, tg = gate conductor
of the system. The capacitance matrix is evaluated by using thickness.
formulas in reference [5], [ 11] containing elliptic integrals.
For evaluating the capacitances Css and Cdd [see Fig. 3(c)]
C. Determination of Lumped Model of the FET
we have compared the numerical results with formulas that
The broadband lumped model (Fig. 2) of the device was
were used by Heinrich [3] but the values of the inductance did
obtained using hot and cold modeling [15]-(17], (23]. In cold
not show sufficient accuracy. For our problem the single nar
modeling the extrinsic elements (Lg, Cpg, L., Ld, Cpd) were
row microstrip formulas [31], [30] are suitable and using these
extracted at (Vds = 0 V, Vgs = - 4 V) and (Vis = 0 V,
analytical formulas the capacitance and inductance matrices
Vgs > 0 V) these elements being independent of frequency
determination is improved.
and of the biasing conditions. In hot modeling the intrinsic
elements (Cg., Cgd, Cd., Gm, Ri, Rds, T) were obtained by
B. Influence of Imperfect Conductors
the de-embedding procedure of extrinsic elements. The intrin
For a conductor with finite thickness the surface impedance
sic elements are independent of the frequency but they are
can be approximated as [6]
functions of bias conditions. Optimization was performed by
Zs = ZmCOth(rt) (1) varying the values of the intrinsic FET elements in the vicinity
of ±10% of their mean value until the error between measured
where
and modeled S-parameters were reduced to acceptable levels.
+
/ = 81 ";j: 1. s t he propagati.o n constant
D. Determination of the Distributed Model of the FET
and
In the distributed model (full sliced model), the FET
l+j
Zm =- is divided into many cells cascaded together, as shown
CTmDm in Fig. 3(a)-(c). Each cell contains the coupled electrode
J
where Dm = 2 is the skin depth of metallic layers. This transmission lines, resistance and internal inductance of
µoaTnw electrodes, and an intrinsic GaAs FET equivalent circuit.
impedance can be separated into real and imaginary parts
The values of coupled transmission line elements, resistance
Zs = Rs + jwLs. and internal inductance of electrodes have been given in (3).
To deduce the values of Cpgd and Cpdd at the input and output
The real part represents the electrode resistance and the
of the distributed FET model, the capacitances C and C
imaginary part the inner inductance. The surface resistance Ri 11 22
are subtracted from the corresponding capacitances Cpg and
and internal inductance Li per unit length can be written as
Cpd of the lumped FET model as follows
R _ Re(zmcoth(rt)) L _ Im(zmcoth(rt)) ( )
2
,- 1 , - lw . Cpgd = (Cpg - Cu)N/2 Cpdd = (Cpd - C22)N/2 (4)
6 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 44, NO. I, JANUARY 1996
Source elec.
(short)
Gate eiec.
(open)
Draineiec.
(open)
(a)
S:EES'
:~::::l:l::os
G A G'_ LiJ ..
d~
D D' .... d
(b)
s'
Intrinsic FET drain
small-signal
equivalent circuit
sHs'
g Al g'
d'
(c)
Fig. 3. Complete detailed circuit diagram for our FET distributed model: (a) Full sliced model representation of a pi-gate FET, (b) representation of a quarter
of the FET by cascaded six-port cells, and (c) an elementary cell of distributed FET configuration.
where TABLE I
C 11 _- C gg + Css +C sCgsCds +s c sg LINEAR SCATLOIN DGI SRTURLIBEUS TFERDO MM OLDUEMLP ED MODEL
Lumped model Distributed model
CsdCss
C 22 = C dd + -Cs-s +- C-sd- +- C-s-g (5) Cgs Cgs/N
Cgd (Cgd-C2 I )IN
N is slice number. The value of lg and ld in the distributed Cds Cds/N
Rds Rds*N
FET model in Fig. 3(a) are chosen as Ri Ri*N
Gm Gm/N
lg::::::: 2Lg, ld::::::: 2Ld Tau Tau
Rg 3*Rg/N
Rd Rd*N-Rdd
where Lg and Ld are the extrinsic inductances in the lumped Rs Rs*N-Rss
FET model (Fig. 2). Scaling rules were applied to the other
elements of the lumped model, as shown in Table I, in order
to obtain the element values of the intrinsic FET small-signal
From several computations of the distributed FET models for
equivalent circuit cell in Fig. 3(c). The value of C in Table
21 W = 4 x 70 = 280 micrometers a value of N = ~t"te ~i~t~ =
I is given by ' ice 1 t
4 has been chosen and used in all the simulations. For N >
CsgCsd
C 21 = C dg + -Cs-s -+- C"sd- +- C-s g i4d, enretiscuallt.s of S-parameter simulations remain approximately
ABDIPOUR AND PACAUD: COMPLETE SLICED MODEL OF MICROWAVE FET'S 7
+Measured
x Sliced mod.
+ Measured ol.J.Jmped mod.
x Sliced mod.
0 l.J.Jmpedmod. ' ' "
'
_,' ,' mag=3
11=1.000
12=26.000
0,33 =r 11=1 .000
12=26.000
(a)
+ Distributed Theory
x Sliced
+ Distributed Theory
x Sliced
0 \----
11=1.000
11=1.000
12=60.000 0,33 =r 12=60.000
(b)
Fig. 4 (a) Comparison between measured and modeled S-parameters in the range 1-26 GHz. Device NE710 Ids = 10 mA; Vds = 3 V. (b) Comparison
between distributed theory and sliced model S-parameters in the range I-60 GHz.
TABLE II TABLE III
NUMERICAL VALVES OF LUMPED MODEL NUMERICAL VALVES OF DISTRIBUTED MODEL
ELEMENTS Vds = 3 V, Ids = 10 mA ELEMENTS Vds = 3 V, Ids = 10 mA
Lumped model elem. Numerical Value Distributed model elem. Numerical Value
Cgs 0.216 pl' Int. FET small-signal See tables I and II
Cgd 0.033 pl' equivalent circuit
Cds 0.005 pF Rss =Rdd 0.9 ohm/mm
Rds 231 ohm Rgg 34.3 olun/mm
Ri 7.3 ohm lss=ldd 0.06 nH/mm
Gm 41 mS lgg 0.12 nH/mm
tau 1.98 pS Lss=Ldd 0.72 nH/mm
Rg 3.29 ohm Lgg 1.49 nH/mm
Rd 1.77 ohm Msg=Mgd 0.36 nH/mm
Rs 1.74 ohm Msd 0.24 nH/mm
Lg 0.383 nH Css=Cdd 0.087 pF/mm
Ld 0.434 nH Cgg 0.0006 pF/mm
Ls 0.094 nH Csg=Cgd 0.029 pF/mm
Cpg 0.078 pF Csd 0.061 pF/mm
Cpd 0.092 pl'
III. RESULTS II and IIL In Fig. 4(a) the S-parameters of the sliced model,
measured data, and lumped model data have been compared
This procedure was used for complete small-signal char
= =
acterisation of a submicrometer-gate GaAs NE710 transistor. in 1-26 GHz band at Vds 3 V, Ids 10 mA bias point
Comparing these curves, one can see that the sliced model is
The NE710 is a transistor for low-noise applications. The
device has a 0.3 µm x 280 µm gate with a "pi-gate" better when compared with measured data in this frequency
shape. Both the input and output nodes were connected to band. To validate the sliced model with the distributed theory
the centre of the gate and drain electrodes. The transistor model, Fig. 4(b) is presented and one can see that these
was biased at Vds = 3 V, Ids = 10 mA and the S results are comparable in this frequency band, except for
parameters were measured in 1-26 GHz band using the HP 812.
8510 C Network analyzer. The values of lumped model Using the device fabrication data sheet and its geome
elements and distributed model elements are shown in Tables try consideration (Fig. 1) , the values for the various device