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About IC Design 3 - Basic MOS Device Physics
This document provides an overview of basic MOS device physics. It discusses reasons for studying device physics and how effects become more significant as technologies scale. It then describes the basic structure of an n-type MOS device and key parameters like channel length and oxide thickness. Threshold voltage calculation and formation of the inversion layer are explained. The document also covers I-V characteristics in triode and saturation regions. Finally, it introduces some second-order effects like body effect, channel-length modulation, and subthreshold conduction that must be considered in modern technologies.
Detailed Information
Author: | ['Nana Sarkodie Kwakye'] |
---|---|
Publication Year: | 2018 |
Pages: | 59 |
Language: | English |
Format: | |
Price: | FREE |
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