Table Of ContentSpringer Series in
Electronics and Photonics 22
Edited b y D . H . A uston
Springer Series in Electronics and Photonics
Editors: D. H . Auston W. Engl T. Sugano
Volume 21 Picosecond E lectronics and Optoelectronics
Editors: G.A. M ourou, D.M. B loom, C.-H. Lee
Volume 22 High-Speed Electronics
Basic Physical Phenomena a nd Device Principles
Editors: B. KaJ.lback and H . Beneking
This series was originally published u nder t he title
Springer S eries in Electrophysics
and has been r enamed s tarting w ith Volume 2 2.
Volumes 1-20 a re l isted on the b ack i nside cover
High-Speed Electronics
Basic P hysical Phenomena a nd
Device P rinciples
Proceedings of t he I nternational C onference
Stockholm, Sweden, August 7 -9,1986
Editors: B. Ktillbtick and H . B eneking
With 1 95 Figures
Springer-Verlag Berlin Heidelberg New York
London Paris Tokyo
Dr. Bengt K ftllbftck
RIFA A B, S -163 81 Stockholm, Sweden
Professor D r. Heinz B eneking
Institut f Ur Halbleitertechnik, Rhein.-Westf. Technische H ochschule,
SommerfeldstraBe, D-5100 Aachen, F ed. Rep. of G ermany
Series Editors:
Dr. David H . Auston
AT & T Bell L aboratories, 6 00 Mountain A venue, Murray H ill, NJ 0 7974, USA
Professor 'Dr. Walter E ng!
Institut f Ur Theoretische E lektrotechnik, Rhein.-Westf. Technische H ochschule,
Templergraben 5 5, D-5100 Aachen, F ed. Rep. o f G ermany
Professor T akuo S ugano
Department o f E lectronic E ngineering, T he F aculty o f E ngineering,
The U niversity o f Tokyo, 7 -3-1, Hongo, Bunkyo-ku, T okyo, 113, Japan
ISBN-13:978-3-642-82981-9 e-ISBN-13:978-3-642-82979-6
DOl: 10.1007/978-3-642-82979-6
This w ork i s subject t o c opyright. All r ights a re r eserved, whether t he w hole o r p art o f t he m aterial i s
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Munich.
© S pringer-Verlag B erlin H eidelberg 1 986
Sof'tcover reprint of t he hardcover 1st edition 1986
The u se o f r egistered n ames, t rademarks e tc. in t his p ublication d oes n ot i mply, e ven i n t he a bsence o f a
specific s tatement, t hat s uch names a re e xempt f rom t he r elevant p rotective l aws and r egulations a nd
therefore f ree f or g eneral u se.
215313150-543210
Preface
In the past, a number of Satellite Conferences have been held in con
nection with the International Conference o n Physics of S emiconductors,
covering selected f ields of interest. In 1 986, when t he m ain c onference w as
held in Stockholm, Sweden, new. phenomena h ad to be discussed: super
lattices, hot ' electron p henomena a nd n ew device structures f or high-speed
applications. The aim was to select topics which would be of i nterest to
physicists as well as to electronics engineers. Therefore a Satellite Con
ference o n H!gh-Speed Electronics, B asic Physical P henomena a nd Device
Principles, was arranged at Saltjobaden, a coastal resort near Stockholm.
An organizing c ommittee was established after the first suggestion made
by Professor Grimmeiss from the University of L und, Sweden, and some
preliminary d iscussions o n t he C onference format. A Program C ommittee
was established to be responsible for the further selection of t he invited
talks, the regular papers and poster presentation. The aim was to have
a broad spectrum of c ontributions to attract physicists as well as device
oriented engineers and to stimulate d iscussions among t he participants.
These P roceedings contain all oral and poster presentations, with e m
phasis on the invited talks, which give a competent overview of t he f ield.
The f ast publication b y Springer-Verlag h as permitted t he p resentation o f
an up-to-date survey of t he principles of h igh-speed electronics. Incorpo
ration in the S pringer Series in Electronics and Photonics will enable t he
book to be d istributed worldwide and to r each all interested scientists.
We have t o t hank a ll those w ho m ade t he c onference a successful m eet
ing, those who attended as well as the members of t he local organizing
committee.
Finally, o ur s incere t hanks g o t o R IFA a nd t he E ricsson g roup, Sweden,
especially to D r. Ramqvist, for generous support of t he conference.
Stockholm B. Kiillbiick
Aachen, September 1986 H. Beneking
v
Contents
Part I Hot-Electron Dynamics
Modelling of H igh Electron Velocity Effects for Devices
By R. Castagne (With 7 Figures) ....................... 2
Ballistic Tra.nsport and Electron Spectroscopy in Tunnelling Hot
Electron Transfer Amplifiers (THETA)
By M. Heiblum (With 6 Figures) ........................ 11
Hot Electron Transistors, By J . R. Hayes, A.F.J. Levi,
A.C. Gossard, and J.H. English (With 4 Figures) ............ 19
Tunneling Through III-V L ow-Barrier Heterostructures
By P. Gueret, A. Baratoff, S. Bending, H. Meier, E. Marclay,
and M. Py (With 3 Figures) ........................... 24
Velocity Overshoot and Suppression of D iffusivity and Microwave
Noise in Short n + -n-n + Structures o f G aAs
By V. Bareikis, K. Kibickas, J. Liberis, A. Matulionis, R. Miliusyte,
J. Parseliiinas, J. Pozela, and P. Sakalas (With 4 Figures) ...... 28
Mobility Over,shoot of H ot Electrons
By V.N. Freire, A.R. Vasconcellos, and R. Luzzi ......... . . . . 32
Monte-Carlo Simulation of t he Effects Induced by Real-Space
Transfer i n a HEMT . By M. Mouis, P. Dolfus, B. Mougel, J.
F. Pone, and R. Castagne (With 7 Figures) ................ 35
Application of t he I ntegral Boltzmann E quation to t he Hot
Electron P roblem i n an I nhomogeneous Submicron Structure
By P. Kuivalainen and K. Lindberg (With 5 Figures) ......... 40
Three P icosecond Oscillations in Avalanche Electron- Hole Plasma
Induced by Energy Relaxation Phenomena
By D. Lippens and J.1. Nieruchalski (With 4 Figures) ........ 44
VII
Part II Heterostructures, S uperlattices a nd Quantum Wells
Resonant Tunneling Tr.ansistors, Tunneling Superlattice Devices
and New Quantum Well Avalanche Photo diodes
By F. Capasso (With 12 Figures) ....................... 50
Novel Real-Space Transfer Devices
By A. Kastalsky (With 8 Figures) 62
Transport Characteristics in Heterostructure D evices
By S. Muto, S. Hiyamizu, and N. Yokoyama. (With 8 Figures) 72
Technical Issues of H igh-Speed Heterostructure D evices
By T. Ikegami, K Yamasaki, T. Mizutani, T. Ishibashi,
and M. Fujimoto (With 10 Figures) ...................... 79
Hot-Carrier-Excited Two-Dimensional Plasmon in Selectively
Doped AfGaAs/GaAs Heterointerface Under High Electric Field
Application
By T. Kobayashi, N. Okisu, and Y. Sambe (With 5 Figures) .... 88
Optical High-Field-Transport Experiments in GaAs Quantum
Wells. By J. Shah and R.A. Hopfel (With 3 Figures) ......... 93
Optical Time-of-Flight Investigation in Ambipolar Carrier
Transport in Specially Designed GaAs/GaAIAs Quantum Well
Structures. By H. Hillmer, G. Mayer, A. Forchel, KS. Lochner,
and E. Bauser (With 3 Figures) . . . . . . . . . . . . . . . . . . . . . . . . . 97
An Ultra-Fast Optical Modulator: The D ouble-Well GaAs/GaAIAs
Superlattic;e (DWSL). By B. Deveaud, A. Chomette, A. Regreny,
J.L. Oudar, D. Hulin, and A. Antonetti (With 2 Figures) ...... 101
High-Velocity Vertical Transport in Graded Gap GaAs/GaAIAs
Superlattices. By B. Lambert, B. Deveaud, A. Chomette,
A. Regreny, and R. Romestain (With 3 Figures) ............. 104
Modelling 9f M obility Degradation in Submicron MOSFETs After
Electrical Stressing
By B. Cabon-Till and G. Ghibaudo (With 2 Figures) ......... 108
Negative Differential Mobility and Drift Velocity Overshoot in a
Single Quantum Well of A IGaAs/GaAs/ AIGaAs Heterostructure
By C. Hamaguchi, K Miyatsuji, and H. Tanimoto
(With 5 Figures) .... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 112
Monte Carlo S tudy of H ot Electron Transport in GaAs-AIGaAs
Quantum Wells
By S.M. Goodnick and P. Lugli (With 3 Figures) ............ 116
VIII
Part III High-Speed Electronic D evices
High-Speed Bulk Unipolar Structures in Silicon
By J.M. Shannon ................................... 122
Silicon Bulk Barrier D iodes Fabricated by LPVPE
By H. Beneking, 1. Vescan, A. Gruhle, J . M. Cloos, and M. Marso
(With 4 Figures) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 123
Impact Ionization Breakdown of G aAs Current, L imiters
By K. Lehovec (With 2 Figures) ........................ 127
The New High Speed Devices: The B arrier T ransistor a nd the
TEG-Base Transistor
By C.Y. Chang, W.C. Liu, and Y.H. Wang (With 6 Figures) 132
Monte Carlo: I nvestigation of t he High Electron Mobility
Transistor. By U. Ravaioli and D.K. Ferry (With 4 Figures) 136
Excess Gate Current Due to Hot Electrons in GaAs-Gate FETs
By D.J. Frank, P.M. Solomon, D.C. La T ulipe, Jr., H. Baratte,
C.M. Knoedler, and S.L. Wright (With 3 Figures) ........... 140
Potential Barriers in Doped GaAs by OM-VPE
By P. Roentgen, G. Fernholz, and H. Beneking (With 6 Figures). 144
Low Noise High Electron Mobility Transistors Grown By MOVPE
By M. Wolny, P. Chambery, A. Briere, and J.-P. Andre
(With 3 Figures) ., . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 148
Emitter-Coupled Logic Ring Oscillators Implemented with
GaAs/GaAlAs Single and Double Heterojunction Bipolar
Transistors: A Comparison. By C. Dubon-Chevallier, '
P. Desrousseaux, A.M. Duchenois, C. Besombes, J. Dangla,
C. Bacot, and D. Ankri (With 4 Figures) .................. 151
Self-Aligned Technology Using Refractory Ohmic Contacts for
GaAs/GaAlAs Heterojunction Bipolar Transistors
By K. Daoud-Ketata, C. Dubon-Chevallier, J. Etrillard,
and J.F. Bresse (With 3 Figures) ........................ 156
Novel Cryoelectronic Device Concept Based on M agnetically
Controlled Current Flow i n Bulk Semiconductors
By J. Mannhart, J. Parisi, and R.P. Huebener (With 7 Figures) 160
InGaAIAs/InGaAs/InGaAIAs NnpnN Double Heterojunction
Bipolar Transistors: Experimental Characteristics a nd Monte
Carlo I nterpretation. By J .L. Pelouard, P. Hesto, J.P. Praseuth,
and 1 . Goldstein (With 5 Figures) ....................... 164
IX
Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar
Transistors. By L.P. Ramberg, P.M. Enquist, Y.K. Chen,
F.E. Najjar, L.F. Eastman, E.A. Fitzgerald, and K.L. Kavanagh 168
Cryogenic GaAs Integrated Circuits Using a Lightly Doped
GaAs FET Structure. By J. Kamdem, M. Henry, J.P. Klein,
F. Alexandre, and M. Gloanec (With 8 Figures) ............. 172
GaAs-on-Insulator Structure P repared by Heteroepitaxy of
Fluorides and GaAs. By T. Asano, K. Tsutsui, H. Ishiwara,
and S. Furukawa (With 5 Figures) ...... -.. . . . . . . . . . . . . ... 177
Part IV High-Speed Opto-Electronics
Optoelectronic Generation of V ery High Speed Electromagnetic
Transients'; By D.H. Auston, M.C. Nuss, and P.R. Smith ...... 184
Picosecond E lectro-Optic Sampling
By G.A. Mourou (With 9 Figures) ....................... 191
High-Speed Integrated Circuit Testing by Time-Resolved
Photoemission. By R. Clauberg, H.K. Seitz, A. Blacha, J.A. Kash,
and H. Beha (With 2 Figures) .......................... 200
Overview of O ptical Switching and Bistability
By N. Peyghambarian, H.M. Gibbs, D. Hulin, A. Antonetti,
A. Migus, and A. Mysyrowicz (With 2 Figures) ............. 204
Monte Carlo Investigation of H igh-Speed GaAs Schottky Barrier
Photo diode
By M.A. Osman, U. Ravaioli, and D.K. Ferry (With 5 Figures) 210
A High-Speed Au/Il1o.53Gav.47As/InP Schottky Barrier
Photo diode for 1.3-1.65;.tm Photodetection
By J.H. Kim and S.S. Li (With 3 Figures) ................. 214
High Sensitivity Picosecond Optical Pulse Detection by
Semiconductor L aser Amplifiers Via Cross-Correlation
By K. Ketterer, E.H. Bottcher, and D. Bimberg (With 5 Figures) 218
GaAs Photoconductors to Characterize P icosecond R esponse
in GaAs Integrated Devices and Circuits. By R.B. Hammond,
N.G. Pault~r, and A.J. Gibbs (With 2 Figures) . . . . . . . . . . . . .. 223
Characterization o f On-Chip Polycrystalline Silicon
Photoconductors. By D.K. Fitzpatrick, D.R. Bowman,
and R.B. Hammond (With 3 Figures) .................... 226
Index o f C ontributors .. 231
x
Part 1
Hot-Electron Dynamics
