High-/Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS

160 Pages·2012·4.4 MB·English

by  Pui-In Mak

Analog Circuits and Signal Processing
Series Editors:
Mohammed Ismail. The Ohio State University
Mohamad Sawan. E´cole Polytechnique de Montre´al
Forfurther volumes:
http://www.springer.com/series/7381

(cid:1)
Pui-In Mak Rui Paulo Martins
High-/Mixed-Voltage
Analog and RF Circuit
Techniques for Nanoscale
CMOS
Pui-InMak RuiPauloMartins
UniversityofMacau UniversityofMacau
Taipa,Macao,China Taipa,Macao,China
ISBN978-1-4419-9538-4 ISBN978-1-4419-9539-1(eBook)
DOI10.1007/978-1-4419-9539-1
SpringerNewYorkHeidelbergDordrechtLondon
LibraryofCongressControlNumber:2012933993
#SpringerScience+BusinessMediaNewYork2012
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Preface
The scope of more intelligent and higher data rate wireless connectivity in the
coming decades continuously push the performance envelope of wireless circuits
andsystems.Higherintegrationlevel,morefunctionality,lesscostandlowerpower
are the obvious goals. For the radio front-ends, inductorless broadband solutions
possess the highest potential to economically realize low-power multi-standard
solutions in nm-length CMOS technologies. The rapid downscaling of transistor
sizesandgate-oxidethickness,however,involvesrapidreductionofsupplyvoltage
for reliability. This fact, in addition to the changed device features such as lower
intrinsic gain and linearity, urges for more feasible techniques from different
dimensions, such that the performances can be aligned continuously with the
expectationfromtheglobalwirelesschipindustry.
Inthisbook,high-/mixed-voltageanalogandRFcircuitsareinvestigatedasthe
prospective solution for the next generation of wireless products in nm-length
CMOStechnologies.Thecontentstartsbyoverviewingthedesignconsiderations,
pros and cons of high-/mixed-voltage circuits before describing three tailor-made
circuit designs targeting the mobile-TV applications. Mobile TV is recognized as
oneofthekeyfunctionsofhandhelddevicessuchassmartphones.
Thefirstdesignisa90-nmCMOSultra-widebandlow-noiseamplifierwithmixed-
voltageESDprotectionforhandlingthefull-bandofmobileTV.Thesecondisa90-nm
CMOShigh-voltage-enabledmobile-TVRFfront-endwithTV-GSMinteroperability.
Thethirdisa65-nmCMOSmixed-voltageunifiedfull-bandmobile-TVreceiverfront-
endavertinganyexternalbalun,whilemeasuringfavorablyperformanceswithrespect
tothestate-of-the-art.
Mosttechniquesaregenerallyextendabletodifferenttypesofwirelesssystems
inultra-scaledCMOStechnologies.
Taipa,Macao,China Pui-InMak
RuiPauloMartins
vii

Acknowledgments
We are grateful to Macao Science and Technology Development Fund (FDCT)
andResearchCommitteeofUniversityofMacau(UM),forfundingtheprojectand
equipmentsoftheStateKeyLaboratoryofAnalogandMixed-SignalVLSI.
WethankMr.Ka-FaiUnandMiaoLiufortheircontributiontothedesignofthe
multi-phaselocaloscillatorgeneratorandhigh-voltageamplifier,respectively.
We thank the staff at Springer, particularly Chuck Glaser, for guiding the
preparationofthisbook.
Finally, we send our heartfelt appreciation to our families, who endured our
dedicationtothisbook.
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