Table Of ContentDK4126—Prelims—31/5/2007—20:41—SRIDHAR—240429—XMLMODELCRC12a–pp.1–15
DK4126—Prelims—31/5/2007—20:41—SRIDHAR—240429—XMLMODELCRC12a–pp.1–15
Foreword to the Second
Edition
In 1958, the year of the invention of the integrated circuit, the price of a single silicon transistor was
about $10. Today, it is possible to buy more than 20 million transistors at that price. Not only the
transistors but an equal number of passive components and a set of interconnections that permit the
devices to function as a dynamic random access memory also can be bought for that price. This cost
reductionisunprecedented.
This progress was due to the work of tens of thousands of very capable engineers throughout the
world.Everystepofthefabricationprocess,fromthepreparationofpuresiliconmaterialstothefinal
packaging operations, has been carefully examined, reinvented, and improved. Highly automated
equipment have been developed for the manufacturing processes. This book provides an overview of
the current status of this work, and takes a look at the expected future growth of the semiconductor
industry.
Thesecostreductionshavetremendouslyexpandedthefieldofelectronics.In1958,themostcommon
electronic products were radio and television sets, and the semiconductor market represented about
$218million.Butnowsemiconductorsareusedineverythingfromautomobilestox-raymachines,and
itsworldwidemarketexceeds$200billion.Thesuccessstoryisnotyetoverastheindustryisexpectedto
achieveremarkablegrowthinthefuture.
Jack S. Kilby
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Preface to the Second
Edition
Theprimarypurposeofthesecondeditionofthishandbookistoserveasareferencetothepractitioners
anddevelopersofsemiconductormanufacturingtechnology.Mostofthechaptersdealwithindividual
process, equipment, material, or manufacturing “control/support/infrastructure” technologies.
However,wehavesupplementedthesewithafewoverviewchaptersthatprovideadditionalbackground.
Thereisasignificantcontentofgraphs,tables,andformulas,whichexpertsineachsubfieldmightfind
useful. However, unlike a “mostly numbers handbook,” we have embedded such compact reference
information into a basic description of current and anticipated practice in integrated circuit
manufacturing. Although this handbook is not as tutorial as a typical textbook, we have attempted
tomakeeachchapterhighlyreadabletononspecialistsinthisfield.Wehopethatthebookisusefulto
thescientificcommunityinvolvedinthedevelopmentandmanufacturingofsemiconductorproductsas
well as tothe studentsinthis field. Notethat thebookmainly addressessilicon-based manufacturing,
although many of the topics are applicable to building devices on other semiconductor substrates.
Generous reference lists/bibliographies arealso included for thebenefit of readers.
Makingthebestuseofthefreedomgivenbyeditors,theauthorshaveusedabreadthofapproaches,as
wellasstyles,acrossthechapters.Somehaveprovidedmore“historicalinformation,”whiletheothers
haveinsistedmoreon“prognostication.”Therearechaptersthatstickprettycloselytothe“traditional
basics” and others that emphasize the current/future R&D challenges in the area. This flexibility has
providedtheauthorsanopportunitytoexpresstheirpersonalperspectivesandsenseofexcitementabout
what is importanttodayand in the near future in this field. Of course,semiconductor manufacturing
technology has become so specialized that many of the chapters required multidisciplinary expertise,
whichinturnhaswidenedperspectivesusedinthebook.
It was definitely challenging to provide up-to-date reference data in a field as broad and rapidly
changing as semiconductor manufacturing technology. For example, note the increase in page count
found in the National/International Technology Roadmap for Semiconductors editions published
from1992 to 2005. We areglad to publish the second edition of this book, inwhichwe have tried to
anticipatewhatwillbemostrelevanttoreadersin2006andbeyond.Whilemostoftheauthors,whoare
distinguishedtechnologistsinindustryandacademia,haveupdatedtheirchaptersfromthefirstedition,
some others have provided entirely new chapters on topics of current interest in semiconductor
manufacturing or its R&D horizon. This continued scaling and evolution of device construction have
alsoresultedinnewissuesandperspectives,whichhaveinfluencedthetopicsaswellastheirtreatments
and relationships within this book. Our authors have responded to this challenge with an excellent
coordinationbetweenandwithinchapters.
The scenario in semiconductor industry, like when the first edition was published, still remains
excitingandweagainappreciatethisopportunitytosharethetechnicalknowledgeandexperienceofthe
authors/colleagueswiththereaders.
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Inadditiontothankingtheauthors,wealsoliketoacknowledgethecontributionsofTimWooldridge,
ourassistanteditor.Wehaveallenjoyedworkingonthisprojectandhopethatthereaderstoofindthe
bookinterestinganduseful.
Robert Doering and Yoshio Nishi
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Editors
RobertDoeringisaseniorfellowandatechnologystrategymanagerattheTexasInstruments(TI).His
previous positions at TI include manager of Future-Factory Strategy, director of Scaled-Technology
Integration, and director of the Microelectronics Manufacturing Science and Technology (MMST)
Program. The MMST Program was a 5-year R&D effort, funded by the DARPA, the U.S. Air Force,
and theTI, which developed awiderange of new technologies for advancedsemiconductor manufac-
turing. The major highlight of the program was the demonstration, in 1993, of sub-3-day cycle time
formanufacturing350-nmCMOSintegratedcircuits.Thiswasprincipallyenabledbythedevelopment
of100%single-waferprocessing.
HereceivedaBSdegreeinphysicsfromtheMassachusettsInstituteofTechnologyin1968andaPhD
in physics from the Michigan State University in 1974. He joined the TI in 1980, after serving several
years as thefacultyofthe physics departmentat theUniversityof Virginia. Hisresearchwas basedon
thenuclearreactionsandwashighlightedbythediscoveryofthegiantspin–isospinresonanceinheavy
nuclei in 1973 and by the pioneering experiments in medium-energy heavy-ion reactions in the late
1970s. His earlywork atthe TIwas onSRAM, DRAM, andNMOS/CMOS devicephysics and process
flow design. His management responsibilities during the first 10 years at the TI included advanced
lithographyandplasmaetchingaswellasCMOSandDRAMtechnologydevelopment.
Dr Doering is an IEEE fellowand chairof theSemiconductor Manufacturing Technical Committee
oftheIEEEElectronDevicesSociety.HealsochairstheNationalResearchCouncilBoardofAssessment
fortheNISTElectronicsandElectricalEngineeringLaboratory.HerepresentstheTIonmanyindustry
committees,includingtheTechnologyStrategyCommitteeoftheSemiconductorIndustryAssociation,
theboardofdirectorsoftheSemiconductorResearchCorporation(SRC),theTechnicalProgramGroup
oftheNanoelectronicsResearchCorporation,andtheCorporateAssociatesAdvisoryCommitteeofthe
AmericanInstituteofPhysics.DrDoeringisalsooneofthetwoU.S.representativestotheInternational
Roadmap Committee, which governs the International Technology Roadmap for Semiconductors. He
hasauthored/presentedover150publicationsandinvitedpapers/talksandhas20U.S.patents.
Yoshio Nishi is a professor in the Department of Electrical Engineering (research) and also in the
Department of Material Science and Engineering at the Stanford University since May 2002. He also
servesasthedirectoroftheStanfordNanofabricationFacilityofNationalNanotechnologyInfrastructure
NetworkoftheUnitedStatesanddirectorofresearchoftheCenterforIntegratedSystems.
He received a BS degree in materials science and a PhD in electronics engineering from Waseda
UniversityandtheUniversityofTokyo,respectively.
He researched on semiconductor device physics and silicon interfaces in the Toshiba R&D, which
resulted in the discovery of ESR PB Center at SiO2–Si interface, the first 256-bit MNOS nonvolatile
RAM,SOS16-bitmicroprocessor,andtheworld’sfirst1-MBCMOSDRAM.
In1986hejoinedHewlett-PackardasthedirectoroftheSiliconProcessLab,andthenestablishedthe
ULSIResearchLab.
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Dr Nishi joined the TI, Inc. in 1995 as the senior vice president and the director of R&D for the
semiconductor group, implemented a new R&D model for silicon technology development, and
establishedtheKilbyCenter.
Since May 2002, he became a faculty member at the Stanford University, and his research interest
coversnanoelectronicdevicesandmaterialsincludingametalgate/high-kMOS,adevicelayertransfer
for3Dintegration,nanowiredevices,andresistancechangenonvolatilememorymaterialsanddevices.
He has published more than 200 papers including conference proceedings, and he coauthored/edited
ninebooks.Heholdsmorethan70patentsintheUnitedStatesandJapan.
During the period of 1995–2002, he served as a board member of the SRC and the International
Sematech,theNNIpanel,theMARCOgoverningcouncil,andotherboards.Currently,heservesasan
affiliatedmemberoftheScienceCouncilofJapan.
Dr Nishi is a fellow of the IEEE, a member of the Japan Society of Applied Physics and the
ElectrochemicalSociety.Hisrecentawardsincludethe1995IEEEJackMortonAwardandthe2002IEEE
RobertNoyceMedal.
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Contributors
Michael Ameen Stephanie Watts Butler Will Conley
AxcelisTechnologies,Inc. SiliconTechnologyDevelopment FreescaleSemiconductor,Inc.
Beverly,Massachusetts TexasInstruments,Inc. Austin,Texas
Dallas,Texas
Nick Atchison Sorin Cristoloveanu
Multigig,Inc. Jeff Byers InstituteofMicroelectronics,
ScottsValley,California KLA-Tencor ElectromagnetismandPhotonics
Grenoble,France
Austin,Texas
SanjayBanerjee
Francois M. d’Heurle
DepartmentofElectricaland Andreas Cangellaris
IBMThomasJ.WatsonResearch
ComputerEngineering DepartmentofElectricaland
Center
UniversityofTexasatAustin ComputerEngineering
YorktownHeights,NewYork
Austin,Texas TheUniversityofIllinois
Urbana,Illinois
Vallabh H. Dhudshia
Gabriel G. Barna
SafeFabSolutions
ProcessDevelopmentandControl G. K.Celler
Plano,Texas
SiliconTechnologyDevelopment SoitecUSA
TexasInstruments,Inc. Peabody,Massachusetts Alain C.Diebold
Dallas,Texas
SEMATECH
MeiChang Austin,Texas
RobertBaumann
AppliedMaterials,Inc.
ComponentReliabilityGroup SantaClara,California Girish A.Dixit
SiliconTechnologyDevelopment
NovellusSystems,Inc.
TexasInstruments,Inc.
Walter Class SanJose,Califonia
Dallas,Texas
AxcelisTechnologies,Inc.
Simon Fang
Beverly,Massachusetts
Ivan Berry
UnitedMicroelectronics
AxcelisTechnologies,Inc. Corporation
C.Rinn Cleavelin
Beverly,Massachusetts Hsin-ChuCity,Taiwan
SiliconTechnologyDevelopment
TexasInstruments,Inc.
Duane S.Boning Leonard Foster
Austin,Texas
DepartmentofElectrical FacilitiesDepartment
EngineeringandComputer TexasInstruments,Inc.
Sean Collins
Science Dallas,Texas
MassachusettsInstitute SiliconTechnologyDevelopment
ofTechnology TexasInstruments,Inc. Gene E.Fuller
Cambridge,Massachusetts Dallas,Texas StrategicLithographyServices
PuntaGorda,Florida
LouisBreaux LuigiColombo
SiliconTechnologyDevelopment SiliconTechnologyDevelopment Glenn W. Gale
TexasInstruments,Inc. TexasInstruments,Inc. SEZAG
Dallas,Texas Dallas,Texas Villach,Austria
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Description:Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic a
