GaN and Related Materials II

718 Pages·2000·67.914 MB·\718

by  Stephen J. Pearton (Editor)

GaN and Related Materials II
Optoelectronic Properties of Semiconductors
and Superlattices
A series edited by M. O. , Air Force Research Laboratory
Kirtland Air Force Base, New Mexico, USA
Volume 1
Long Wavelength Infrared Detectors
Edited by Manijeh Razeghi
Volume 2
GaN and Related Materials
Edited by Stephen J. Pearton
Volume 3
Antimonide-Related Strained-Layer Heterostructures
Edited by M. O. Manasreh
Volume 4
Strained-Layer Quantum Wells and Their Applications
Edited by M. O. Manasreh
Volume 5
Structural and Optical Properties of Porous Silicon Nanostructures
Edited by G. Amato, C. Delerue and H.-J. von Bardeleben
Volume 6
Long Wavelength Infrared Emitters Based on Quantum Wells
and Superlattices
Edited by Manfred Helm
Volume 7
GaN and Related Materials II
Edited by Stephen J. Pearton
In preparation
The Optics of Semiconductor Quantum Wires and Dots:
Fabrication, Characterization, Theory and Application
Edited by Garnett W. Bryant
See the back of this book for other titles in preparation in Optoelectronic Properties of
Semiconductors and Superlattices.
GaN and Related Materials II
Edited by
Stephen J. Pearton
University of Florida
Gainesville, Florida, USA
Boca Raton London New York
CRC Press is an imprint of the
Taylor & Francis Group, an informa business
First published 2000 by Gordon and Breach Science Publisher
Published 2018 by CRC Press
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Copyright © 2000 by Taylor & Francis Group, LLC
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ISBN 13: 978-90-5699-686-4 (pbk)
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British Library Cataloguing in Publication Data
GaN and related materials II. - (Optoelectronic properties
of semiconductors and superlattices ; v. 7 - ISSN 1023-6619)
1. Gallium compounds 2. Nitrides 3. Semiconductors
I. Pearton, S. J. (Stephen J.)
537.6'22
CONTENTS
About the Series vii
Introduction ix
1 Laser Diodes 1
S. Nakamura
2 GaN and AlGaN Devices: Field Effect Transistors and
Photodetectors 47
M. S. Shur and M. Asif Khan
3 Growth and Doping of Defects in Di-Nitrides 93
G. Popovici and H. Morkog
4 Structural and Electronic Properties of AlGaN 173
A. Y. Polyakov
5 Theory of Laser Gain in Group DI-Nitride Quantum Wells 235
W. W. Chow and S. W. Koch
6 Electronic and Optical Properties of Bulk and QW Structures 263
T. XJenoyama and M. Suzuki
7 Materials Theory Based Modeling of GaN Devices 305
K. F. Brennan, J. Kolnik, I. H. Oguzman, E. Bellotti,
M. Farahmand, P. P. Rudeny R. Wang and 7. D, Albrecht
8 Erbium Doping of D3-V Nitrides 361
J. M. Zavada
9 Novel Device Applications for Ill-Nitrides 387
C. R. Abernathy and F. Ren
10 Thermodynamic and Electronic Properties of GaN and
Related Alloys 411
M. A. Berding, M. van Schilfgaarde and A. Sher
11 GaN Quantum Dots 445
S. Tanaka and P. Ramvall
VI CONTENTS
12 GaN Device Processing 475
S. J. Pearton
13 Contacts to GaN 541
S. E. Mohney and S. S. Lau
14 Ion Implantation Advances in Group El-Nitride Semiconductors 567
J. C. Zolper
15 Inductively Coupled Plasma Etching of III-V Nitrides 601
R. J. Shul
16 Low Energy Electron Enhanced Etching (LE4) of III-N
Materials 663
H. P. Gillis, K. P. Martin and D. A. Choutov
Index 677
ABOUT THE SERIES
The series Optoelectronic Properties of Semiconductors and Superlattices
provides a forum for the latest research in optoelectronic properties of
semiconductor quantum wells, superlattices, and related materials. It features
a balance between original theoretical and experimental research in basic-
physics, device physics, novel materials and quantum structures, processing,
and systems—bearing in mind the transformation of research into products
and services related to dual-use applications. The following sub-fields, as
well as others at the cutting edge of research in this field, will be addressed:
long wavelength infrared detectors, photodetectors (MWIR-visible-UV),
infrared sources, vertical cavity surface-emitting lasers, wide-band gap
materials (including blue-green lasers and LEDs), narrow-band gap materials
and structures, low-dimensional systems in semiconductors, strained quantum
wells and superlattices, ultrahigh-speed optoelectronics, and novel materials
and devices.
The main objective of this book series is to provide readers with a basic
understanding of new developments in recent research on optoelectronic
properties of semiconductor quantum wells and superlattices. The volumes
in this series are written for advanced graduate students majoring in solid
state physics, electrical engineering, and materials science and engineering,
as well as researchers involved in the field of semiconductor materials,
growth, processing, and devices.

INTRODUCTION
The science and technology of IH-nitride materials and devices continues
to attract a tremendous amount of attention. Applications in high-density
optical storage, high-power electronic switches, microwave electronics, full
color displays, color copying, solar-blind UV detectors, and military covert
communications provide the impetus for the strong worldwide research and
development efforts in these materials.
An earlier volume — GaN and Related Materials — published in this
series provided extensive coverage of topics, including a historical survey
of past research, growth of binary and ternary alloys by molecular beam
and chemical vapor deposition methods, optical, electrical and
microstructural characterization, theory of defects, bulk crystal growth, the
role of hydrogen, device processing and fabrication, and performance of
electronic and photonic devices.
In this new volume, where it is warranted, we update coverage in some
of these areas and present some newer topics, especially lasers, UV
detectors, microwave electronics, and Er-doping. A key breakthrough in
achieving commercial laser lifetimes in GaN-laser devices was that of
epitaxial lateral overgrowth on Si02-pattemed substrates, producing very
low defect densities in the overgrown regions. Shuji Nakamura provides an
outstanding review of this work, and his breathtaking achievements in laser
diodes. Michael Shur and Asif Khan discuss the rapid advances in GaN-
based electronics and detector structures. An intriguing new area of research
is that of GaN quantum dots, and the role of these dots in InGaN laser
performance. Satoru Tanaka and Peter Ramvall discuss the preparation and
characterization of such dots. John Zavada reviews the advances in Er-
doping in Ill-nitrides, which affects wavelength division multiplexing
optical fiber communication systems operating at 1.54 jam, the region of
minimum loss in silica fibers. The wide bandgap hosts for Er, such as GaN
and AIN, show less temperature quenching of the Er3+ emission than narrow
gap semiconductors. The electronic and optical properties of bulk and
quantum well structures is key to the advancement of nitride devices, and
this topic is reviewed by Takeshi Uenoyama and Masakatsu Suzuki. The
materials-based modeling of GaN devices, such as the calculation of impact
ionization transition rates and coefficients in avalanche photo-detectors is
an emerging area, and is treated in detail by a collaborative effort between
Georgia Institute of Technology and University of Minnesota. The theory
of laser gain in nitride quantum wells is of prime importance due to the