Table Of ContentFRONTIERS IN
ELECTRONICS
Selected Papers from the Workshop on
Frontiers in Electronics 2013 (WOFE-13)
9482_9789814651769_tp.indd 1 25/11/14 4:01 pm
SELECTED TOPICS IN ELECTRONICS AND SYSTEMS
Editor-in-Chief: M. S. Shur
Published*
Vol. 44: Nanotubes and Nanowires
ed. Peter J. Burke
Vol. 45: Proceedings of the 2006 IEEE Lester Eastman Conference on Advanced
Semiconductor Devices
eds. Michael S. Shur, P. Maki and J. Kolodzey
Vol. 46: Terahertz Science and Technology for Military and Security Applications
eds. Dwight L. Woolard, James O. Jensen, R. Jennifer Hwu and
Michael S. Shur
Vol. 47: Physics and Modeling of Tera- and Nano-Devices
eds. M. Ryzhii and V. Ryzhii
Vol. 48: Spectral Sensing Research for Water Monitoring Applications and Frontier
Science and Technology for Chemical, Biological and Radiological Defense
eds. D. Woolard and J. Jensen
Vol. 49: Spectral Sensing Research for Surface and Air Monitoring in Chemical,
Biological and Radiological Defense and Security Applications
eds. J.-M. Theriault and J. Jensen
Vol. 50: Frontiers in Electronics
eds. Sorin Cristoloveanu and Michael S. Shur
Vol. 51: Advanced High Speed Devices
eds. Michael S. Shur and P. Maki
Vol. 52: Frontiers in Electronics
Proceedings of the Workshop on Frontiers in Electronics 2009 (WOFE-2009)
eds. Sorin Cristoloveanu and Michael S. Shur
Vol. 53: Frontiers in Electronics
Selected Papers from the Workshop on Frontiers in Electronics 2011 (WOFE-2011)
eds. Sorin Cristoloveanu and Michael S. Shur
Vol. 54: Frontiers in Electronics
Advanced Modeling of Nanoscale Electron Devices
eds. Benjamin Iñiguez and Tor A. Fjeldly
Vol. 55: Frontiers in Electronics
Selected Papers from the Workshop on Frontiers in Electronics 2013 (WOFE-2013)
eds. Sorin Cristoloveanu and Michael S. Shur
*The complete list of the published volumes in the series can be found at
http://www.worldscientific.com/series/stes
Dr Ng - Frontiers in Electronics 2013.indd 1 25/11/2014 4:09:50 PM
Selected Topics in Electronics and Systems – Vol. 55
FRONTIERS IN
ELECTRONICS
Selected Papers from the Workshop on
Frontiers in Electronics 2013 (WOFE-13)
San Juan, Puerto-Rico 17 – 20 December 2013
Editors
Sorin Cristoloveanu
IMEP, INP Grenoble – MINATEC, France
Michael S. Shur
Rensselaer Polytechnic Institute, USA
World Scientific
NEW JERSEY • LONDON • SINGAPORE • BEIJING • SHANGHAI • HONG KONG • TAIPEI • CHENNAI
9482_9789814651769_tp.indd 2 25/11/14 4:01 pm
Published by
World Scientific Publishing Co. Pte. Ltd.
5 Toh Tuck Link, Singapore 596224
USA office: 27 Warren Street, Suite 401-402, Hackensack, NJ 07601
UK office: 57 Shelton Street, Covent Garden, London WC2H 9HE
British Library Cataloguing-in-Publication Data
A catalogue record for this book is available from the British Library.
Selected Topics in Electronics and Systems — Vol. 55
FRONTIERS IN ELECTRONICS
Selected Papers from the Workshop on Frontiers in Electronics (WOFE-2013)
Copyright © 2014 by World Scientific Publishing Co. Pte. Ltd.
All rights reserved. This book, or parts thereof, may not be reproduced in any form or by any means, electronic or
mechanical, including photocopying, recording or any information storage and retrieval system now known or to
be invented, without written permission from the publisher.
For photocopying of material in this volume, please pay a copying fee through the Copyright Clearance Center,
Inc., 222 Rosewood Drive, Danvers, MA 01923, USA. In this case permission to photocopy is not required from
the publisher.
ISBN 978-981-4651-76-9
Printed in Singapore
Dr Ng - Frontiers in Electronics 2013.indd 2 25/11/2014 4:09:50 PM
Preface
The Workshop on Frontiers in Electronics – WOFE-2013 is the eighth in the series of the
WOFE workshops, took place in San Juan, Puerto Rico, in December 2013.
The workshop brought together researchers who conducted ground-breaking works in
CMOS and SOI to wide band gap semiconductor technology, terahertz technology, and
bioelectronics. WOFE-2013 program provides a unique opportunity for interdisciplinary
discussions of key issues of microelectronics, photonics, and nanoelectronics.
To be at the forefront in Electronics, this book provides a forum to stimulate
frank, bold and original discussions leading to the presentations of provocative and
controversial views, so that to define the frontiers in Electronics for the next two years,
before we meet again for WOFE 2015.
This book includes the best papers of WOFE-2013 invited by the editors and selected
after peer review. The articles addressing topics ranging from advanced transistors: TFT,
FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and
materials.
This book will be a useful reference for scientists, engineers, researcher, and
inventors who looking for future direction of microelectronics, the trends and the
technology underpinning these development.
Editors
Michael Shur and Sorin Cristoloveanu
v
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Contents
Preface v
Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a
Composite Free Layer 1
Alexander Makarov, Viktor Sverdlov and Siegfried Selberherr
Development of III-Sb Technology for p-Channel MOSFETs 17
Andrew Greene, Shailesh Madisetti, Michael Yakimov,
Vadim Tokranov and Serge Oktyabrsky
Graphene Active Plasmonics for New Types of Terahertz Lasers 33
Taiichi Otsuji, Akira Satou, Stephane Boubanga Tombet,
Alexander A. Dubinov, Vyacheslav V. Popov, Victor Ryzhii and
Michael S. Shur
Impact of Multi-Layer Carbon-Doped/Undoped GaN Buffer on
Suppression of Current Collapse in AlGaN/GaN HFETs 51
Hee-Sung Kang, Dong-Seok Kim, Chul-Ho Won, Young-Jo Kim,
Young Jun Yoon, Do-Kywn Kim, Jung-Hee Lee, YoungHo Bae and
Sorin Cristoloveanu
Deep UV LEDs for Public Health Applications 65
Ignas Gaska, Olga Bilenko, Saulius Smetona, Yuri Bilenko,
Remis Gaska and Michael Shur
Demonstration of Unified Memory in FinFETs 75
Sung-Jae Chang, Maryline Bawedin, Jong-Hyun Lee, Jung-Hee Lee
and Sorin Cristoloveanu
Advances in MBE Selective Area Growth of III-Nitride Nanostructures:
From NanoLEDs to Pseudo Substrates 95
Steven Albert, Ana Maria Bengoechea-Encabo, Francesca Barbagini,
David Lopez-Rormero, Miguel Angel Sanchez-Garcia, Enrique Calleja,
Pierre Lefebvre, Xiang Kong, Uwe Jahn, Achim Trampert, Marcus Müller,
Frank Bertram, Gordon Schmidt, Peter Veit, Silke Petzold, Jürgen Christen,
Philippe De Mierry and Jesus Zuñiga-Perez
vii
viii Contents
Structural and Optical Characteristics of Metamorphic Bulk InAsSb 133
Youxi Lin, Ding Wang, Dmitry Donetsky, Gela Kipshidze,
Leon Shterengas, Gregory Belenky, Wendy L. Sarney and
Stefan P. Svensson
Novel Cascade Diode Lasers Based on Type-I Quantum Wells 143
Rui Liang, Leon Shterengas, Gela Kipshidze, Takashi Hosoda,
Sergey Suchalkin and Gregory Belenky
Vertical Conduction in the New Field Effect Transistors: p-Type and
n-Type Vertical Channel Thin Film Transistors 151
Olivier Bonnaud, Peng Zhang, Emmanuel Jacques and Regis Rogel
Reflections on the Future Electric Power Grid Monitoring System 167
Michael Gouzman and Serge Luryi
Author Index 177
Progress in Magnetoresistive Memory:
Magnetic Tunnel Junctions with a Composite Free Layer
Alexander Makarov, Viktor Sverdlov, and Siegfried Selberherr
Institute for Microelectronics, TU Wien,
Vienna, A-1040, Austria
[email protected]
Received 24 March 2014
Accepted 20 June 2014
Magnetoresistive memory is a candidate for future universal memory because of fast switching, high
density, and non-volatility. However, improvement regarding the essential parameters such as
thermal stability and switching current is still needed and finding alternative architectures for
magnetic cell structures is of considerable importance for the success of magnetoresistive memory.
A structure with a composite free layer displays significant switching time reduction without
sacrificing the thermal stability. In this work we discuss the progress in development of structures
with a composite free layer from first suggestions to structurally optimized cells. We compare the
most important parameters of a newly proposed optimized structure with a composite free layer,
which are the switching time, the thermal stability, and the switching energy barrier, with a
conventional structure with a monolithic free layer.
Keywords: STT-MRAM; micromagnetic simulation; composite free layer.
1. Introduction
Today’s magnetic memory technology is represented by magnetoresistive RAM
(MRAM) and spin transfer torque MRAM (STT-MRAM)1. The basic element of a
MRAM and STT-MRAM cell is a sandwich of two magnetic layers separated by a non-
magnetic conducting spacer layer or a thin insulating layer. While the magnetization of
the reference layer (RL) is fixed due to the fabrication process, the magnetization
direction of the free layer (FL) can be switched between the two states parallel and anti-
Fig. 1. Schematic illustration of a magnetic pillar in a high resistance (left) and low resistance (right) state.
1
