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About Fermi Level in Semiconductor: BPT: 401: Electronics and Modern Physics
Fermi level is the highest occupied energy level of free electrons at 0K. In an intrinsic semiconductor, the Fermi level lies in the middle of the bandgap. When impurities are added, the Fermi level shifts. In an n-type semiconductor, donors add free electrons, shifting the Fermi level closer to the conduction band. In a p-type semiconductor, acceptors add holes, shifting the Fermi level closer to the valence band. When a p-type and n-type material are joined, a PN junction is formed with a built-in electric field. Application of a forward bias lowers the potential barrier, increasing diffusion current, while reversed bias increases the barrier, reducing diffusion current.
Detailed Information
| Author: | ['Maharishi Tiwari'] |
|---|---|
| Publication Year: | 2021 |
| Pages: | 10 |
| Language: | English |
| Format: | |
| Price: | FREE |
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