Table Of ContentFabrication, Properties and Applications
of Low-Dimensional Semiconductors
NATO ASI Series
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Series 3: High Technology - Vol. 3
Fabrication, Properties and
Applications of Low-Dimensional
Semiconductors
edited by
Minko Balkanski
University Pierre et Marie Curie, Paris, France
and
Ivan Yanchev
St Kliment Ohridski University, Sofia, Bulgaria
SPRINGER SCIENCE+BUSINESS MEDIA, B.V.
Proceedings of the NATO Advanced Study Institute on
Fabrication , Properties and Application s of Low-Dimensiona l Semiconductor s
Sozopol, Bulgaria
September 19-29,1994
Library of Congress Cataloging-in-Publicatio n Data
Fabrication , properties , and application s of low-dimensional
semiconductors : held i n Sozopol, Bulgaria , September 19-29, 1994 :
proceedings of a NATO high technolog y ASI / edite d by Minko
Balkanski, Ivan Yanchev.
p. cm. — (NATO ASI series . Partnershi p sub-serie s 3, High
technology ; 3)
Includes index.
ISBN 978-94-010-4043-3 ISBN 978-94-011-0089-2 (eBook)
DOI 10.1007/978-94-011-0089-2
1. Semiconductors—Surface—Congresses. 2. Quantum wells -
-Congresses. 3. Crystal growth—Congresses. 4. Layer structur e
(Solids)—Congresses. I . Balkanski , Minko, 1927- . II . Yanchev,
Ivan. III . Series : NATO ASI series . Partnershi p sub-serie s 3, High
techno1 ogy ; vol . 3.
QC611.6.S9F33 1995
537.6'22—dc20 95-20158
ISBN 978-94-010-4043-3
Printed on acid-free paper
All Rights Reserved
© 1995 Springer Science+Busines s Media Dordrecht
Originall y publishe d by Kluwer Academic Publisher s in 1995
Softcover reprint of the hardcover 1st edition 1995
No part of the material protected by this copyrigh t notice may be reproduced or
utilized in any form or by any means, electronic or mechanical, includin g photo-
copying, recording or by any informatio n storage and retrieval system, without written
permissio n from the copyrigh t owner.
TABLE OF CONTENTS
Preface ix
Acknowledgements xiii
1. Fabrication of Low-Dimensional Semiconductor Structures
Molecular Beam Epitaxy - Fundamental Growth Aspects and Selected
ContributionstoPhysicsandApplicationsofLow-DimensionalSemiconductor
Structures.
K. H. Ploog
PreparationofQuantumStructures:QuantumWellInfraredDetectors. 59
G. A. Sarov
HeteroepitaxyofLayeredIII-VISemiconductorGaSeOnSi(111)7x7Surface. 97
M. Eddrief,LeThanhVinh, Y. L.Zheng,1. F. Petroff, C. Sebenne and
M. Balkanski
FabricationandSimulationof0.1 J4m Pseudomorphic HEMTs. TheRole of
PartiallyDepletedp-Buffer 101
A. Asenov, N.!. Cameron, M.R.S. Taylor, M. Holland and S.P.
Beaumont
CrystalStructureInvestigationofPbOThinFilmsProducedbyPulsedLaser
103
Evaporation.
V. D.TunchevaandM.1. Baleva
Modeling, Simulation and Characterization of the Metal-semiconductor
Micro/Nanostructures. 105
E. Buzaneva, V. Kanevskiy, V. Levandovskii, V. Skryshevsky, V.
Vikulov,C. Pettenkofer
2. Fundamental Properties of Low-Dimensional
Semiconductor Structures.
ElectronicStatesinQuantumWellsandSuperlattices. 107
G. BastardandR. Ferreira
A New Method to Compute Subband Energy States of Low-Dimensional
SystemsbyUsingFeynmanPathIntegrals. 135
I. Nachev
vi
Bound-to-Continuum State Absorption Line Shape in Quantum Well
Structures. 139
M.ZaluznyandC. Nalewajko
ATightBindingCalculationofTransitionEnergiesinTriangularSymmetrical
QuantumWells. 141
S. Vlaev
SeparationofVariablesintheOne-ElectronSchrOdingerEquation for Quasi-
OneDimensionalElectronsystems. 143
D.A. Batovski
TransferMatrix Based Calculations ofEnergy Levels in Strained In-GaAs/
GaAsMultipleQuantumWells. 151
T. Worren,K. OzanyanandO. Hunderi
ElectronsandHolesinQuantumStructures. 153
P. Tronc
AnomalousEvolutionofPhotoluminescenceofPorousSiliconLayersatUV
Irradiation. 173
V. Skryshevsky, VA Vikulov, V.l. StrikhaandL.Tristani
Hot Hole p-Ge Lasers and Masers for Spectroscopy ofMultiquantum-Well
HeterostructuresGe/Gel-xSix. 175
V.V. Nikonorov, V.l. Gavrilenko, LN. Kozlov, M.D. Moldavskaya,
O.A. Kuznetsov, LV. Erofeeva
NewExperimentalApproachtotheExcessCarrierTransferinSemiconductor
StructuresBasedonTimeResolvedPhotovoltage. 177
Ch.M. Hardalov,D.A. Batovski andS. Dalakov
SomeOpticalPropertiesofSemiconductor QuantumWellHeterostructures. 181
Ph. Roussignol andM. Voos
Size-DependentCarrierRecombinationinCdSNanocrystalsinSingle-Electron
andPlasmaRegimes. 209
S. Jursfmas, M. StrumskisandA. Zukauskas
QuantumHallEffect.EmpiricalTrendsandRelations. 211
A. Groshev
Persistent Currents inMesoscopicRings. InterferenceEffects in Disordered 235
MultichainRingsinMagneticField.
I.Z. Kostadinov, E.S. Penev
vii
Grating Assisted Electromagnetic Emission from Magnetoplasmon and
CyclotronModes in Two-Dimensional PlasmaLayeron GaAs. A Rigorous
Theory. 237
o.R Matov, O.F. Meshkov ando.v. Polischuk, V.V. Popov
LatticeDynamicsofHgBa2Cu04. 239
V.N. Popovand V.G. Hadjiev
3. Applications of Low-Dimensional Semiconductor
Structures
AdvancedOpticalWaveguideStructures. 241
A.D. Boardman,K. Singh, K. Xie, P. Eganand1. Petracek
ElectroopticEffectinProtonExchangedLiNb03 Waveguides. 309
1. Savatinova,S. Tonchevand M.N. Armenise
Higher-Order Wave and Charge Confinement Effects in Semiconductor
Double-DopedOpticalFibers:Quasi-SolitonPropagationandBistability.
311
St. 1. Tanev, D. I. Pushkarov
WavesinGyrotropicMedia 313
RF. Wallis
NonlinearOpticalDevices. 383
A.Miller
Nonlinear Integrated Optics and All-Optical Waveguide Switching in 415
Semiconductors
G. I. Stegeman, A. Villeneuve,J. S. Aitchison, C. N. Ironside
Complete Switching With an Improvement in the Switching Intensity in
AlGaAsNonlinear Directional Couplers Using the HigherOrder Orthogonal
Modes. 451
Jin U. Kang, G. Krijnen and G. 1. Stegeman,J. S. Aitchison and C. N.
Ironside
ANewTechniqueofQuantumWell DisorderinganditsApplicationto
IntegratedAll-OpticalSwitches 453
S. Shi, P. LiKam Wa, A. Miller,1. Pamulapati,P. Cookeand M. Dutta
Index
455
NATOASIheldinSozopol,Bulgaria,September19-29,1994
FABRICATION,PROPERTIESANDAPPLICATIONSOF
LOW-DIMENSIONALSEMICONDUCTORS
Sponsored by
NATOScientificandEnvironmentalAffairsDivision
Ministeredel'EnseignementSuperieuretdelaRecherche,France
UniversitePierreetMarieCurie,Paris,France
MinistryofHigherEducationandScience,Sofia,Bulgaria
UniversitystKlimentOhridski,Sofia,Bulgaria
BulgarianAcademyofSciences,Sofia,Bulgaria
InstitutdesHautes~tudespourIeDeveloppementdelaCulture,
delaScienceetdelaTechnologieenBulgarie
Principal School Support
NATOProgramforPriorityonHighTechnology
BULBANK,BulgarianBank:forForeignTrade,Sofia,Bulgaria
UniversitePierreetMarieCurie,Paris,France
MinistryofHigherEducationandScience,Sofia,Bulgaria
UniversityStKlimentOhridski,Sofia,Bulgaria
NationalScienceFoundation,USA
PREFACE
TheNATOAdvancedStudyInstitute,"Fabrication,PropertiesandApplicationsofLow
DimensionalSemiconductors",heldinSozopol BULGARIA, September 19-29, 1994, was
made possible by an award from the Assistant Secretary General for Scientific and
EnvironmentalAffairs.TherecognitionbytheAdvisoryPanel onthePriorityAreainHigh
Technologyofinterestinthe proposedprogram, has greatlystimulatedourefforts to hold
this ASI. We are particularly grateful to Dr. 1. A. Rausell-Colom, Program Director for
PriorityAreaandHighTechnology,forhisconstantinterestandhelpfulattitudeduring the
preparationoftheASI.
This NATO-ASI is planned as a part ofa three-year's program onLow-Dimensional
SemiconductorStructures. The first year is focused on the fundamental properties and
applicationsofsemiconductorquantum structures, which we hope will be followed by a
secondcourseonDeviceStructures,FunctionsandPerformances, and bya third courseon
SystemsBasedonQuantumStructures.
This subject is a major development in high technology which bears considerable
industrialpotential.Itisimportanttogivetheopportunitytoyoungscientistsandengineers
tobe rapidly updatedbythe bestexpertsin thefield. Meetingofwesternworld specialists
withscientistsfrom the newlyfreed easterncountriesisconsidered as an eminent priority
because it concerns the basic training of future engineers and the modern industrial
developmentofthesecountries.
Theselectionoftheparticipantswascarefullyplannedwiththeseperspectivesinmind.
97applicationswerereceivedfrom23differentcountries.Particulareffortsweremadeto
reach an adequate equilibrium in geographical distribution. Although two accepted
participantscould notattend;onefrom Japan, amemberofMITI, forprofessional reasons
which requiredhis presence in his office; the other from Madras, India who might have
founddifficultyintravelingfrom sofar, theoverallresponsewasconsideredexcellent.
ix
x
Ofparticularinterestwasthefact that NSFgrantedsupportto4american students, who
broughtspirit,enthusiasm,andaggressivecompetencetotheschool. Veryinterestingwere
also the participants from the Nordic countries who found themselves on the southern
shoresoftheBlackseainBulgaria.
The help given by NATO to participants from Portugal, Greece and Turkey is also
appreciatedforthepreparationandplanningoftheInstitute.
The rapidity withwhich we knew about the acceptance ofourapplication helped very
muchinplanningandorganizingthisASI.ItisthefirsttimethataNATOASI hasbeenheld
inBulgaria;theacademicandtechnical personnel were veryenthusiasticand helped very
efficiently.
Wewereveryfortunate tobenefitfrom thenecessaryinterestandcomprehensionin the
direction of the Bulgarian Foreign Trade Bank which has an excellent Hotel in the
exceptionalresortareaofSozopolonthesouthernpartoftheBlackSea. Excellentfacilities
weremadeavailabletheretoaccommodateourInstitute:TheDirector,DichkoFOTEV,has
averyhighopinionoftheimportanceofNATOASIforBulgariaandisreadytomakeevery
necessaryefforttohavetheInstituteinthefuture. Hewouldhelpbyall means toestablisha
CenterforScientificCultureinhisestablishmentwhichheconsiderswillbeaverygooduse
ofthefacilities inperiods,outofthetouristseason,whichendsonSeptember 15.
Extremelyhelpfulfortheorganizationandthesuccessfulperformanceofthis NATOASI
was the excellentfollow up , information, and guidance we received from the NATO
Brussels Office ofthe Scientific Direction. Facilitating our administrative steps was an
essential encouragementina taskwhich wefeel someonehas to do for the benefit of the
scientificcommunity.
TheAdvancedStudyInstitutehasbeenmainlydevoted to the basic properties of low
dimensional semiconductor structures and to some important applications. Lectures on
Quantum Wells, Double Quantum Wells and Superlattices presented the basic theory of
quantumstructuresandintroducedthe fundamental aspectsoftheiroptical properties. The
effectof reduction ofdimensionality on latticedynamics ofquantum structures was also
discussedindetail.
