Fabless Semiconductor Manufacturing: In the Era of Internet of Things

340 Pages·2022·51.565 MB·English

by  Chinmay K. Maiti

Fabless Semiconductor Manufacturing

Fabless Semiconductor Manufacturing

In the Era of Internet of Things

edited by
Chinmay K. Maiti
Published by
Jenny Stanford Publishing Pte. Ltd.
101 Thomson Road
#06-01, United Square
Singapore 307591
Email: [email protected]
Web: www.jennystanford.com
British Library Cataloguing-in-Publication Data
A catalogue record for this book is available from the British Library.
Fabless Semiconductor Manufacturing: In the Era of Internet
of Things
All rights reserved. This book, or parts thereof, may not be reproduced in any form
Copyright © 2023 by Jenny Stanford Publishing Pte. Ltd.
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or any information storage and retrieval system now known or to be invented,
without written permission from the publisher.
For photocopying of material in this volume, please pay a copying fee through
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ISBN 978-981-4968-27-0 (Hardcover)
ISBN 978-1-003-31497-4 (eBook)
Professor N. B. Chakrabarti
Dedicated to

Contents
Preface

List of Abbreviations

xiii
1. Introduction x1v

Chinmay K. Maiti

1.1 Introduction 1

1.2 Technology Computer-Aided Design 11

1.3 Physical Model Calibration 14

1.4 Database for Calibration 15

1.5 Design Technology Co-optimization 15

1.6 Industry 4.0 16

1.7 Fabless Intelligent Manufacturing 17

1.8 Simulation Environment 19

1.9 Nanowire Transistors 20

1.10 Nanosheet Transistors 23

1.11 III-Nitride Flexible Electronic Devices 26

1.12 FDSOI RF Flexible Electronics 27

1.13 Simulation at Atomic Scale 30
2. 1Fa.1b4le ss SInutmelmligaernyt Manufacturing 3419

Arup Ratan Saha

2.1 Semiconductor Industry 53

2.2 Performance of Manufacturing Process 62

2.3 Cycle Time 63

2.4 Throughput 64

2.5 Handling Systems in Wafer Fabs 64

2.6 Intelligent Manufacturing 66

2.7 AI in Smart Manufacturing and Design 70
2.8 Summary 73
viii Contents
3. Simulation Environment 81

Chinmay K. Maiti

3.1 MINIMOS-NT 83

3.2 VSP 84

3.3 Silvaco TCAD 85

3.4 VictoryProcess 86

3.5 Process Simulation 88

3.6 VictoryDevice 89

3.7 Device Simulation 90

3.8 Model Selection 92

3.9 Drift-Diffusion Transport Model 93

3.10 Shockley-Read-Hall Recombination 94

3.11 Low-Field Mobility Model 95

3.12 Density-Gradient Model 97

3.13 Bandgap Narrowing Model 99

3.14 Stress/Strain Modeling 100

3.15 VictoryStress 102

3.15.1 VictoryStress Features and

Capabilities 103

3.16 Piezoresistivity 104

3.17 Modeling Approaches 105
4. 3N.a1n8o wiSreu mTramnasrisyt ors 110161

Suprava Dey

4.1 Silicon on Insulator (SOI) Transistors 114

4.2 Multi-Gate Architecture 115

4.3 Ultimate Device: GAA Nanowire Transistor 117

4.4 Design of Nanowire Transistors 118

4.5 Process Simulation of Nanowire Transistors 120

4.6 Design at Nanoscale 126

4.7 Effects of Gate Length Variation 133

4.8 Effects of Nanowire Diameter Variation 139

4.9 Strain-Engineered Nanowire FETs 141

4.10 Variability in Nanowire Transistors 146

4.11 Modeling of Random Discrete Dopants 148
4.12 Summary 154
Contents ix
5. Nanosheet Transistors 165

Eleena Mohapatra

5.1 GAA Nanowire vs. Nanosheet Transistors 169

5.2 Design and Simulation of Nanosheet

Transistors 172

5.3 Effects of Sheet Width Variation 172

5.4 Effects of Sheet Height Variation 176

5.5 Vertically Stacked Lateral Nanosheet

Transistors 176

5.6 Strain-Engineered NSFETs 178

5.7 Variability in NSFETs 183

5.8 Modeling of WFV 185

5.9 Modeling of Random Dopant Fluctuation 194

5.10 Modeling of Random Discrete Dopant 196

5.11 Combined Variability (RDD and MGG) in

NSFETs 199
6. 5III.1-N2i tridSeu Fmlemxiabrlye Electronic Devices 220121

Chinmay K. Maiti

x x

6.1 Al Ga1− N Alloy 220

6.2 GaN HEMT Manufacturing Technology 222

6.3 Losses in Flexible Substrates 225

6.4 Characterization Flexible GaN HEMTs 225

6.5 Stress/Strain Analysis in GaN HEMTs 228
7. 6FD.6S OI RSFu Fmlemxibarley Electronics 223499

Chinmay K. Maiti

7.1 Potential of SOI-CMOS Technology for

Flexible Electronics 257

7.2 SmartCut Process 259

7.3 RF CMOS SOI Technology 261

7.4 SOI CMOS Technology for Flexible

Electronics 264

7.5 SOI RF-MOSFET Characterization 266

7.6 Simulation of FDSOI RF MOSFETs 269
7.7 Strain Engineering in RF Flexible CMOS 271