Table Of Content

ERBIUMDOPEDIII-N MATERIALSFORNEAR-IROPTOELECTRONICS By DEVINMACKENZIE J. ADISSERTATIONPRESENTEDTOTHEGRADUATESCHOOL OFTHEUNIVERSITYOFFLORIDAINPARTIALFULFILLMENT OFTHEREQUIREMENTSFORTHEDEGREEOF DOCTOROFPHILOSOPHY UNIVERSITYOFFLORIDA 1998 ACKNOWLEDGMENTS TheauthorowesanincredibledebttoProf.CammyR.Abernathy. Withouthersupport fromthefirstdayofgraduateschooltothelast,thiscouldnothavebeenpossible. Eveninthe mostdifficulttimes,thevalueoftheacademicandpersonalrelationshipwithherwasundeni- able. TheauthorisalsoindebtedtoProfKirkKolenbranderandProfRezaAbbaschianfor leadinghimtoCammysdoor. Inthefuture,theauthorcouldnothopetoworkwithsomeone morecapable,understandingoruncannilyreasonablethanProfAbernathy.Thanks. Manythanksarealsoduetothemanycollaboratorswhohavecontributedtothiswork including:ProfStephenPearton,Dr.UweHommerichandhisgroup,ProfFanRen,Dr.Rob- ertWilson,Dr.RobertSchwartz,Dr.JohnZavada,Dr.PaulChen,ProfLenBrillsonandhis group,SeanDonovan,CraigSchardtandW.Krishnamoorthy. 11 TABLEOF CONTENTS ACKNOWLEDGMENTS i ABSTRACT v CHAPTERS 1 INTRODUCTION: NEARIRTECHNOLOGIES ANDTHEIII-N SEMICONDUCTORS 1 2 GROUPIII-NGROWTHBYPLASMA-ASSISTEDMETALORGANIC MOLECULARBEAMEPITAXY 12 2.1 ABriefHistoryofIII-NResearch 12 2.2MetalorganicMolecularBeamEpitaxyofIII-NSemiconductors 13 2.3TheMetalorganicMolecularBeamEpitaxyGrowthSystem 17 2.4VaccuumSystems 24 2.5GeneralGrowthProcedures 27 2.6Characterization 30 3 OPTIMIZATIONOFIII-NGROWTHBYPLASMA-ASSISTED METALORGANICMOLECULARBEAMEPITAXY 34 3.1 AnOptimizationStudyofMetalorganicMolecularBeamEpitaxyofAluminum NitrideandGalliumNitrideSemiconductors 34 3.2AlternativeOxideSubstratesforIII-NHeteroepitaxy 47 3.3PlasmaCharacteristicsandtheGrowthofGroupIll-NitridesbyMetalorganic MolecularBeamEpitaxy 54 4ALUMINUMNITRIDEDOPEDWITHERBIUMDURINGGROWTHBY PLASMA-ASSISTEDMETALORGANICMOLECULARBEAMEPITAXY 67 5 GROWTHANDLUMINESCENCEPROPERTIESOFGALLIUMNITRIDE DOPEDWITHERBIUMDURINGDEPOSITIONBYPLASMA-ASSISTED METALORGANICMOLECULARBEAMEPITAXY 78 iii 6 OPTICALANDELECTRICALEXCITATIONOFMETALORGANIC MOLECULARBEAMEPITAXY-DERIVEDGaN:ErSTRUCTURES INTEGRATEDWITHSILICON 90 REFERENCES 109 BIOGRAPHICALSKETCH 115 IV AbstractofDissertationPresentedtotheGraduateSchool oftheUniversityofFloridainPartialFulfillmentofthe RequirementsfortheDegreeofDoctorofPhilosophy ERBIUMDOPINGOFIII-NMATERIALSFORNEAR-IROPTOELECTRONICS By J.DevinMacKenzie August1998 Chairman:ProfessorCammyR.Abernathy MajorDepartment:MaterialsScienceandEngineering Inthisdissertation,thepotentialforIII-N:Ermaterials,epitaxially-growninultrahigh vacuum,asabasisfornear-IRoptoelectronicdevicesintegratedwithSihasbeendemonstrated. Thisresearcheffort’sscopeincludesthedevelopmentandunderstandingofIII-Nmatrixgrowth fromchemicalbeamsinultrahighvacuum,thedemonstrationandstudyoftheincorporation andluminescencebehaviorofErinIII-Nmaterials,andfinally,therealizationofelectrolumines- centGaN:Erstructuresemittingat1.54pm. Exploitationofthe1.54pmintra-4fshelltransi- tionoftheEr3*ionisofimmediatetechnologicalsignificanceasthisradiativetransitionmatches theattenuationlossminimaofsilicafibers.AIII-Ndevice,utilizingErasanopticalcenterand compatiblewitheconomically-developedSitechnology,couldprovideanefficient,temperature stable,andinexpensivelightsourceforfibercommunicationssystemsaswellasforhighspeed opticalinterconnectsatalllevelsofcomputerintegration.Metalorganicmolecularbeamepitaxy (MOMBE),thegrowthtechniqueusedinthiswork,wasideallysuitedforthisresearchasit allowedforgrowthfromelementalbeams,metalorganicprecursors,andradio-frequency(RF) andelectroncyclotronresonance(ECR)plasmasoverarangeofoperatingconditions.Also,the MOMBEapparatusprovidesthecapabilitytotailordeviceandmaterialsparameterssuchasrare- earthandelectricaldopantprofilesandimpuritylevels. Highquality,GaNandAINfilmsweregrownepitaxiallyon(0001)A1203. Optimized growthconditionsweredeterminedforgrowthofIII-NmaterialsfromECRandRFnitrogen plasmas. ControloverimpuritybackgroundsthroughtheuseofvariousGroupIIIsourceswas achieved.Plasmaparameterswerecorrelatedwithfilmcharacteristicsandopticalemissionspec- traofthe RFandECRplasmastodeducetheoptimalGroupVconditionsforgrowth. Solid sourcedopingandmetalorganicsourceswereutilizedtointroduceErintoIII-Nfilms during growth. Forthefirsttime,strong,room-temperature1.54pmphotoluminescence(PL)was observedfromAIN,InN,GaN andInAINdopedwithErduringgrowth. Devicestructures fabricatedfromMOMBE-derivedGaN:Erdemonstrated,forthefirsttime,electrolumines- cenceatroomtemperaturefromIII-N:ErmaterialsintegratedwithSi.Also,forthefirsttime, electroluminescencehasbeenobservedfromInAIN:Er-basedSchottkystructuresonSi.Lumi- nescence,growthandimplantationexperimentswereperformedtodeducetheinteractionbe- tweenopticallyactiveErandcarbonandoxygen.Anacceptor-likeenergy-transferstatemodel associatedwithChasbeenproposedtoexplaintheopticalactivationofErinMOMBE-derived GaN. vi CHAPTER 1 INTRODUCTION: NEARIRTECHNOLOGIES ANDTHEIII-NSEMICONDUCTORS Therevolutionaryimpactofmicroelectronicsinthesecondhalfofthiscenturycanbeseen ateverylevelofmodernsociety.Fromtheoutset,itwastheintuitionandvisionoftelecommu- nicationsresearchthatsiredthemicrocomputer. Inturn,thedevelopmentofcomputerand informationnetworksintheprivate,commercial,andmilitarysectorshaveplacedintensede- mandsontheessentialtechnologiesofhighdata-ratecommunication. Onasmallerscale,the trendtowardssmallerfeaturesizes,higherclockspeedsandincreasinglevelsofintegrationin microprocessorsisdrivingchiplevelcommunicationstothepracticalandtheoreticallimitsof metallization-interconnectmicrotechnology. Theanswertobothofthesetechnicaldilemmas maybethephoton. Drivenbytheeconomicsofbandwidth,fiber-opticssystemshaverevolu- tionizedlongdistancecommunications.Astheinformationdemandcontinuestogrowonan increasingly-localscale,itseemslikelythatopticalcommunicationssystemsmaybecome in- creasingly conspicuousfixturesinbusinesses,schoolsandhomes. Likewise,opticalintercon- nectshavethepotentialtomeetthespeedanddensityrequirementsofGHz-levelclockspeeds andmonolithicintegrationofcompletecomputingsystems.3 Opticalcommunicationssystemshavebeendesignedtooperateintheoptimalwavelength regimesforminimumsignalattenuationanddispersion. Thenearinfraredlossspectrumfor silicafibersisshowninFigure1-1.1 Radiativeintra-4fshelltransitionsinET+at1.54pm, allowedbycrystalfieldsplittingofdegeneratelevelsmatchtheattenuationlossminimain 1 2 FIGURE1-1 SilicafibersignalattenuationinthenearIR1 silicafibers. TheseenergylevelsaredepictedinFigure1-2.2 Asimilarcore-electrontransi- tioninthePr34ionproducesradiativeemissionat1.3pm,thesilicadispersionminima,which isanothersignificantopticalcarrierforfibercommunicationssystems.Theenergiesofthese intra-4fshelltransitionsintherare-earthionsarequitestableduetotheshieldingofthe4fshell levelsbythefilledouter5sand5porbitals.Table2liststheelectronconfigurationsofthe5s,5p, and4forbitalsfortherare-earthions.5Astheatomicnumberincreases,theoccupationofthe valence5s2p6shellremainsthesamewhileeachsuccessiveelectronintherare-earthseriesfillsthe 4forbitals.Thisorbitalfillingsequenceresultsinverysimilarchemicalpropertiesforallofthe rare-earthsbutarichopticalstructurethatisuniquetoeachion.Importantforoptoelectronics, theseintra-4fshelltransitionenergiesareeffectivelyshieldedfrommatrixeffectsbythe5sand5p 3 Er3+ EnergyLevels 4S3/2 0.54pm 2.0 4F,9/2 0.66pm > 4I,9/2 0.80pm ^ <u 4I11/2 0.98nm bn 1.0 wiaa-ji 4I13/2 ===iB 1.53pm m 0.0 - 4I15/2 free in ion matrix FIGURE1-2.Configurationofintra-4fshellenergylevelsinthefreeEr3*ionandafter crystalfieldsplittingoftheEr3+levelsinamatrix.2 4 electrons.Therefore,theemissionwavelengthoftheserare-earthtransitionsarelargelyindepen- dentofthehostmaterial. Highgain band-edgeandmultiplequantum-welllasersanddetectorsbasedontheIn- GaAsP/InP materialssystemwerealsodevelopedinordertotakeadvantageoftheoptimum infraredcommunicationwavelengthregimes.6However,systemsbasedonnarrow-gapInGaAsP activematerialssufferfrompoorwavelengthstabilityduetooperation-inducedtemperature driftoftheemissionline.Also,integrationofInGaAsPdeviceswithSimicroelectronicsforon- chipinterconnectsisacomplextask. Thelargelattice-mismatchofInGaAsPwithSiandthe sensitivityofthesematerialstodefectsprecludesanydirect,monolithicintegrationbyepitaxial growth.7Otherintegrationstrategiesbasedonphysicallybondingprefabricated,discreteoptical componentstoaSisubstratewouldbecomplex,expensiveanddifficulttoimplementinappli- cationssuchasmicroprocessorsordigitalsignalprocessingcomponentsthatwouldrequireahigh densityofinterconnects. Opticalfibersystemsachievinggainthroughstimulatedemissionfromopticallypumped rare-earthionsweredevelopedtoamplifysignalsintheopticaldomain.8Thesesystems,known asrare-earthdopedfiberamplifiers,donotsufferfromthetemperaturestabilityproblemsof semiconductorsystemsbasedonband-edgeemission. Theeffectivenessofthistechnology hasledtoEr-dopedfiberamplifiersbecomingwellestablishedinthelongdistance telecommunicationsindustry. However,drivingforcesforsimpler,moreefficient,lessexpensive andelectronically-integrated1.54pmgenerationandamplificationhavestimulatedinterestin developingalternativetechnologies.Theopticalpumpingsystemsrequiredinrare-earth-doped fiberamplifiersystemscanbeexpensiveandlarge. Also,typicalfibersystemshaveanoptical

ebook img

Erbium doped III-N materials for near-IR optoelectronics PDF

124 Pages·1998·4.2 MB·English
by  MacKenzie, J. Devin, 1971-
#americana #univ_florida_smathers #UFRDS
Save to my drive
Quick download
Download

Download Erbium doped III-N materials for near-IR optoelectronics PDF Free - Full Version

by MacKenzie, J. Devin, 1971-| 1998| 124 pages| 4.2| English

Download Erbium doped III-N materials for near-IR optoelectronics by MacKenzie, J. Devin, 1971- in PDF format completely FREE. No registration required, no payment needed. Get instant access to this valuable resource on PDFdrive.to!

Free Download PDF

About Erbium doped III-N materials for near-IR optoelectronics

No description available for this book.

Detailed Information

Author:MacKenzie, J. Devin, 1971-
Publication Year:1998
Pages:124
Language:English
File Size:4.2
Format:PDF
Price:FREE
Download Free PDF

Safe & Secure Download - No registration required

Why Choose PDFdrive for Your Free Erbium doped III-N materials for near-IR optoelectronics Download?

  • 100% Free: No hidden fees or subscriptions required for one book every day.
  • No Registration: Immediate access is available without creating accounts for one book every day.
  • Safe and Secure: Clean downloads without malware or viruses
  • Multiple Formats: PDF, MOBI, Mpub,... optimized for all devices
  • Educational Resource: Supporting knowledge sharing and learning

Free Books Similar to Erbium doped III-N materials for near-IR optoelectronics

Frequently Asked Questions

Is it really free to download Erbium doped III-N materials for near-IR optoelectronics PDF?

Yes, on https://PDFdrive.to you can download Erbium doped III-N materials for near-IR optoelectronics by MacKenzie, J. Devin, 1971- completely free. We don't require any payment, subscription, or registration to access this PDF file. For 3 books every day.

How can I read Erbium doped III-N materials for near-IR optoelectronics on my mobile device?

After downloading Erbium doped III-N materials for near-IR optoelectronics PDF, you can open it with any PDF reader app on your phone or tablet. We recommend using Adobe Acrobat Reader, Apple Books, or Google Play Books for the best reading experience.

Is this the full version of Erbium doped III-N materials for near-IR optoelectronics?

Yes, this is the complete PDF version of Erbium doped III-N materials for near-IR optoelectronics by MacKenzie, J. Devin, 1971-. You will be able to read the entire content as in the printed version without missing any pages.

Is it legal to download Erbium doped III-N materials for near-IR optoelectronics PDF for free?

https://PDFdrive.to provides links to free educational resources available online. We do not store any files on our servers. Please be aware of copyright laws in your country before downloading.

The materials shared are intended for research, educational, and personal use in accordance with fair use principles.

We use cookies

We use cookies to ensure you get the best browsing experience on our website. By clicking "Accept Cookies", you agree that we can store cookies on your device in accordance with our Terms and Privacy.