Table Of ContentArindam Biswas · Amit Banerjee ·
Aritra Acharyya · Hiroshi Inokawa ·
Jintendra Nath Roy Editors
Emerging Trends
in Terahertz
Solid-State Physics
and Devices
Sources, Detectors, Advanced Materials,
and Light-matter Interactions
Emerging Trends in Terahertz Solid-State Physics
and Devices
Arindam Biswas Amit Banerjee
(cid:129) (cid:129)
Aritra Acharyya Hiroshi Inokawa
(cid:129) (cid:129)
Jintendra Nath Roy
Editors
Emerging Trends
in Terahertz Solid-State
Physics and Devices
Sources, Detectors, Advanced Materials,
and Light-matter Interactions
123
Editors Amit Banerjee
ArindamBiswas Department ofElectrical
Schoolof Mines andMetallurgy andComputer Engineering
Kazi NazrulUniversity National University ofSingapore
Asansol, West Bengal, India Singapore, Singapore
Aritra Acharyya Hiroshi Inokawa
Department ofElectronics Research Institute of Electronics
andCommunication ShizuokaUniversity
Cooch BeharGovernment Shizuoka, Japan
Engineering College
Cooch Behar,West Bengal, India
Jintendra NathRoy
Department ofPhysics
Kazi NazrulUniversity
Asansol, West Bengal, India
ISBN978-981-15-3234-4 ISBN978-981-15-3235-1 (eBook)
https://doi.org/10.1007/978-981-15-3235-1
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Preface
Generalinterestinphotonicsresearchhasbeenincreasingsignificantlybecauseoftheir
enormous and promising application prospects in the advancement of human civi-
lization.Photonicsisregardedasoneofthekeytechnologieswithapplicationsranging
fromlightsources,opticalcommunications,imaging,detectorsandsensors,opticaldata
storage and displays, medical optics and biophotonics, photovoltaics, plasmonics
technology, etc. The importance of photonics was marked by the United Nations
endorsing2015astheInternationalYearofLight.Photonicsiscollectivelycombined
with micro- and nanoelectronics, biotechnology or nanotechnology. Hence, the
development of new photonic technologies needs the fundamental understanding of
light–matterinteractions,implementationofnewconceptsusingnovelmaterialswith
tailored properties, multidisciplinary research combining photonics modeling with
long-termstrategicaimonfinalapplications.Studyonthesedevicesconsideringthe
compatibilityandeaseoffabricationwithcurrentlyavailabletechnologiesandscopeof
further miniaturization is of enormous importance. This also leads to an increasing
interestforterahertz(THz)technologyinthepastdecadeintheeffortstoharnessthe
power of the thermal radiation in the region from 300 GHz to 3 THz (wavelength:
100 µmto1 mm)andcomeswithsomeuniquelyattractivequalitieswithenormous
application possibilities. This bookdeals withthe emergingapplicationsinterahertz
solid-statephysicsanddevices,includingsources,detectors,advancedmaterials,and
light–matterinteractionswiththeoretical,methodological,well-established,andvali-
datedempiricalexamples.Thetitlecoversaveryvastaudiencefrombasicscienceto
engineering and technology experts and learners. This could eventually work as a
textbookforengineeringandbiomedicalstudentsorsciencemastersprogramsandfor
researchers.Thistitlealsoservescommonpublicinterestbypresentingnewmethodsto
improvethequalityoflifeingeneral,withabetterintegrationintosociety.
Asansol, India Arindam Biswas
Singapore Amit Banerjee
Cooch Behar, India Aritra Acharyya
Shizuoka, Japan Hiroshi Inokawa
Asansol, India Jintendra Nath Roy
v
Contents
THz Bandpass Filter Design Using Metamaterial-Based Defected 1D
Photonic Crystal Structure. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Arpan Deyasi and Angsuman Sarkar
Terahertz Radiators Based on Silicon Carbide Avalanche Transit
Time Sources—Part I: Large-Signal Characteristics . . . . . . . . . . . . . . . 23
S. J. Mukhopadhyay, P. Mukherjee, A. Acharyya and M. Mitra
Terahertz Radiators Based on Silicon Carbide Avalanche Transit
Time Sources—Part II: Avalanche Noise Characteristics. . . . . . . . . . . . 37
S. J. Mukhopadhyay, P. Mukherjee, A. Acharyya and M. Mitra
RF Performance of Ultra-wide Bandgap HEMTs. . . . . . . . . . . . . . . . . . 49
Rajan Singh, T. R. Lenka, D. Panda, R. T. Velpula, B. Jain,
H. Q. T. Bui and H. P. T. Nguyen
Potentiality of Impact Avalanche Transit Time Diode as Terahertz
Source Based on Group IV and III–V Semiconducting Materials . . . . . 65
Girish Chandra Ghivela, S. J. Mukhopadhyay, Joydeep Sengupta
and M. Mitra
Analysis of InN-Based Surrounded Gate Tunnel Field-Effect
Transistor for Terahertz Applications . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Ritam Dutta and Nitai Paitya
On the Quantum Capacitance of Quantum Wire Field-Effect
Transistors of Compound Semiconductors. . . . . . . . . . . . . . . . . . . . . . . 85
A. H. Seikh, N. Alharthi, P. K. Bose and K. P. Ghatak
Heterostructure Devices for THz Signal Recognition . . . . . . . . . . . . . . . 107
Amit Bhattacharyya, Manash Chanda and Debashis De
Data Transmission with Terahertz Communication Systems . . . . . . . . . 121
Mohammed El Ghzaoui and Sudipta Das
vii
viii Contents
Advances in Terahertz Imaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Arijit Saha
Terahertz Emission Mechanisms in III–V Semiconductors:
The Influence of Isoelectronic Dopants. . . . . . . . . . . . . . . . . . . . . . . . . . 169
Rajeev N. Kini and C. P. Vaisakh
Group III—Nitrides and Other Semiconductors
for Terahertz Detector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Bijit Choudhuri and Aniruddha Mondal
About the Editors
Dr. Arindam Biswas Assistant Professor, School of
Mines and Metallurgy, Kazi Nazrul University,
Asansol, Burdwan, West Bengal, 713340, India.
He was born in West Bengal, India in 1984. He
received M.Tech. degree in Radio Physics and
Electronics from University of Calcutta, India in 2010
and Ph.D. from NIT Durgapur in 2013. He was
a Post-Doctoral Researcher at Pusan National
University, South Korea with prestigious BK21PLUS
Fellowship, Republic of Korea. He got Visiting
Professor at Research Institute of Electronics,
Shizouka University, Japan. He has been selected for
IE(I) Young Engineer Award: 2019–2020 in
Electronics and Telecommunication Engineering disci-
pline, Institute of Engineers, India. Dr. Biswas has 10
years’ of experience in teaching research and adminis-
tration.PresentlyDr.BiswasisworkingasanAssistant
Professor in School of Mines and Metallurgy at Kazi
NazrulUniversity,Asansol,WestBengal,India.Hehas
48 technical paper in different journals and 30 confer-
enceproceedingsandsixbooks,oneeditedvolumeand
one book chapter with international repute. Dr. Biswas
received research grant from Science and Engineering
Research Board, Govt of India, under Early Career
Research Scheme for research in Terahertz based GaN
Source. He also received Research Grant from Centre
of Biomedical Engineering, Tokoyo Medical and
Dental University in association with RIE, Shizouka
University,JapanforstudyofbiomedicalTHzImaging
based on WBG semiconductor IMPATT Source.
Presently Dr. Biswas is serving as an Associate Editor
ix
x AbouttheEditors
ofClusterComputing,Springer(SCIIndexed)andasa
guest editor of Nanoscience and Nanotechnology-Asia
(Scopus Indexed), Recent Patent in Material Science
(ScopusIndexed),BenthamsciencePublisher.Dr.Biswas
has produced four Ph.D. students in different topics of
applied optics and high frequency semiconductor
device. He has organized and chaired difference
International Conferences in India and abroad. His
research interest is in carrier transport in low dimen-
sional system and electronic device, non-linear opti-
cal communication, THz Semiconductor Source.
Dr. Biswas acted as reviewer for reputed journals, and
memberoftheInstituteofEngineers(India)andRegular
Fellowof Optical Societyof India (India).
e-mail:[email protected]
Dr. Amit Banerjee Scientist, Microelectronic
Technologies and Devices, Department of Electrical
and Computer Engineering, National University of
Singapore, 21 Lower Kent Ridge Rd, Singapore,
119077, Singapore.
He joined the Advanced Device Research Division,
Research Institute of Electronics, National University
Corporation, Japan as a Scientific Researcher in 2016
andwasalsopartoftheInnovativePhotonicsEvolution
Research Center (iPERC) at Hamamatsu, Japan. He
later joined the Microelectronic Technologies &
Devices, Department of Electrical and Computer
Engineering of the prestigious National University of
Singapore, as Scientist in 2017. Currently Amit is
memberof30+internationaladvisoryboards,technical
program committees in various countries, acted as
paneleditor,reviewerforreputedjournalsandscientific
book volumes, member of Japan Society of Applied
Physics, Indian Physical Society; External Adviser,
Bioelectronics and Biomedical Technologies, Ocuro
ScienceandTechnology(Biomed-startup);Adviserand
Lead Contributor: Semiconductor Devices and Process
Technologies, EDGE196, Entrepreneur Development
Global Ecosystem; Adviser, EntrepreneursFace,
Singapore, Global Venture Capital and Entrepreneurs
Network, Singapore; Technical Adviser to ULVAC
Technologies; among various others. Amit has
co-authored several scientific papers, edited books,
presented in several international conferences as
AbouttheEditors xi
plenary and keynote speakers, received awards includ-
ing young physicist award and honorary
life-membership from Indian Physical Society, award
by the Metrology Society of India (MSI), Indian
Institute of Chemical Engineers (IIChE), award by
Department of Atomic Energy (DAE), his work on
nanodiamonds,wasalsoawardedandfeaturedasakey
scientific article contributing to excellence in engineer-
ing, scientific and industrial research, by Advances in
Engineering, USA; recently their work related to
on-chip integrable terahertz detectors was awarded by
Quality in Research (QiR), Indonesia along with
Prof. Hiroshi Inokawa, RIE, Japan. Alongside the
pursuit of research and administrative ambitions, Amit
is keenly engaged in consulting futuristic technologies
for business firms, educational ventures and universi-
ties. Amit received Ph.D. degree in Semiconductor
Technology from Energy Research Unit, Indian
Association for the Cultivation of Science (DST,
Government of India), and extensively worked on
design and development of high vacuum plasma CVD
reactors, which are used in industrial manufacturing of
solar cells, coatings and TFTs. He also developed low
cost high vacuum MW-PECVD units, and conceived
the process for cost effective commercial grade
antireflection coatings (ARC) synthesis for solar cells
by nanocrytalline diamonds. His current work is on
Terahertz Technology, including THz sensors and
sources, design, fabrication, aiming at biomedical
imaging applications. His recent work on
antenna-coupledmicrobolometerarrays,arecompatible
with the state-of-the-art medium-scale semiconductor
device fabrication processes, and technologically com-
petitivewithcommercialviabilityason-chipintegrable
detector arrays for terahertz imaging.
e-mail: [email protected]; eleami@nus.
edu.sg
