Emerging nanoelectronic devices

573 Pages·2015·17.925 MB·English

by  Bourianoff, George, Chen, An, Hutchby, James, Zhirnov, Victor V

EMERGING
NANOELECTRONIC
DEVICES

EMERGING
NANOELECTRONIC
DEVICES
AnChen
GLOBALFOUNDRIES,USA
JamesHutchby
SemiconductorResearchCorporation,USA
VictorZhirnov
SemiconductorResearchCorporation,USA
GeorgeBourianoff
IntelCorporation,USA
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Emergingnanoelectronicdevices/editedbyDrAnChen,DrJamesHutchby,
DrVictorZhirnov,DrGeorgeBourianoff.
pagescm
Includesbibliographicalreferencesandindex.
ISBN978-1-118-44774-1(cloth)
1. Nanoelectronics. 2. Nanoelectromechanicalsystems. 3. Nanostructured
materials. I. Chen,An(Electronicsengineer),editor. II. Hutchby,James,
editor. III. Zhirnov,VictorV.,editor. IV. Bourianoff,George,editor.
TK7874.84.E322014
621.381–dc23
2014029299
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Setin10/12ptTimesLTStd-RomanbyThomsonDigital,Noida,India
1 2015
To
Linda Wilson

Contents
Preface xix
ListofContributors xxi
Acronyms xxiii
PART ONE INTRODUCTION 1
1 The Nanoelectronics Roadmap 3
James Hutchby
1.1 Introduction 3
1.2 Technology Scaling: Impact and Issues 4
1.3 Technology Scaling: Scaling Limits of Charge-based Devices 4
1.4 The International Technology Roadmap for Semiconductors 6
1.5 ITRS Emerging Research Devices International Technology Working Group 7
1.5.1 ERD Editorial Team 7
1.5.2 Vision and Mission 7
1.5.3 Scope 7
1.6 Guiding Performance Criteria 8
1.6.1 Nanoinformation Processing 8
1.6.2 Nanoelectronic Device Taxonomy 9
1.6.3 Fundamental Guiding Principles – “Beyond CMOS” Information
Processing 10
1.6.4 Current Technology Requirements for CMOS Extension and
Beyond CMOS Memory and Logic Technologies 11
1.7 Selection of Nanodevices as Technology Entries 13
1.8 Perspectives 13
References 14
2 What Constitutes a Nanoswitch? A Perspective 15
Supriyo Datta, Vinh Quang Diep, and Behtash Behin-Aein
2.1 The Search for a Better Switch 15
2.2 Complementary Metal Oxide Semiconductor Switch: Why it Shows Gain 17
2.3 Switch Based on Magnetic Tunnel Junctions: Would it Show Gain? 20
2.3.1 Operation of an MTJ 20
viii Contents
2.3.2 W–R Unit with Electrical Isolation 21
2.3.3 Does This W–R Unit Have Gain? 22
2.4 Giant Spin Hall Effect: A Route to Gain 23
2.4.1 Concatenability 25
2.4.2 Proof of Gain and Directionality 26
2.5 Other Possibilities for Switches with Gain 27
2.5.1 All-spin Logic 28
2.6 What do Alternative Switches Have to Offer? 29
2.6.1 Energy–Delay Product 29
2.6.2 Beyond Boolean Logic 31
2.7 Perspective 32
2.8 Summary 32
Acknowledgments 32
References 33
PART TWO NANOELECTRONIC MEMORIES 35
3 Memory Technologies: Status and Perspectives 37
Victor V. Zhirnov and Matthew J. Marinella
3.1 Introduction: Baseline Memory Technologies 37
3.2 Essential Physics of Charge-based Memory 38
3.3 Dynamic Random Access Memory 39
3.3.1 Total Energy Required to Create/Maintain the Content
of a Memory Cell 41
3.3.2 DRAM Access Time (WRITE or READ) 41
3.3.3 Energy–Space–Time Compromise for DRAM 42
3.4 Flash Memory 43
3.4.1 Store 46
3.4.2 Write 46
3.4.3 Read 47
3.4.4 Energetics of Flash Memory 47
3.5 Static Random Access Memory 49
3.5.1 SRAM Access Time 51
3.5.2 SRAM Scaling 51
3.6 Summary and Perspective 52
Appendix: Memory Array Interconnects 52
Acknowledgments 54
References 54
4 Spin Transfer Torque Random Access Memory 56
Jian-Ping Wang, Mahdi Jamali, Angeline Klemm, and Hao Meng
4.1 Chapter Overview 56
4.2 Spin Transfer Torque 57
4.2.1 Background of Spin Transfer Torque 57
4.2.2 Experimental Observation of Spin Transfer Torque 59